Cadmium chalcogenide (CdX, X=S, Se) traps photons in the visible and near-infrared regions, and it has been widely used in optoelectronic devices such as solar cells and light-emitting diodes. The carrier concentration and intrinsic mobility are prerequisites for the optimized design of optoelectronic devices, while the underlying physics that determines the carrier mobility of sphalerite CdX remains elusive. Herein, we explore the temperature-dependent carrier transport properties and scattering mechanisms of sphalerite CdX from first-principles. The calculation results indicate that the isotropic electron mobility for CdS and CdSe are 180.2 cm2/Vs and 656.8 cm2/Vs at room temperature, respectively. An in-depth analysis reveals that polar optical phonon (POP) scattering is the main scattering mechanism limiting the mobility of sphalerite CdX, and electrons are mainly affected by long-range longitudinal optical phonon scattering. The lower electron mobility of CdS compared to CdSe is attributed to the larger Fröhlich coupling constant, greater Pauling ionicity, and stronger electron-phonon interactions. As the temperature rises, the electron mobility of CdX consistently decreases due to the enhancement of POP scattering and lattice vibrations. The electron mobility of CdX at high doping concentrations decreases dramatically, attributing to the enhancement of ionized impurity scattering i.e. collisional scattering of electrons and ionized impurity ions. This work provides a systematic study of the electron transport properties of sphalerite cadmium chalcogenide from first-principles, which provides a theoretical guideline for the functional regulation and improvement of optoelectronic devices.