C-plane Sapphire Research Articles

Twin-free thermal laser epitaxy of Si on sapphire

The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with ±0.3% stability over time. We also demonstrate heteroepitaxy of Si on c-plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000 °C produced high-quality epitaxial Si (111) films without twin domains.

Mechanism of Thermodynamically Rationalized Selective Growth of a Two-Dimensional Ternary Ferromagnet on Insulating Substrates.

Two-dimensional (2D) semiconducting ferromagnet Fe3GeTe2 holds great promise for advanced spintronic applications because of its gate-tunable ferromagnetic ordering at room temperature, whereas the controllable growth of large-area single crystals remains very challenging due to its ternary nature and variable stoichiometry inducing many competitive phases. Here, we theoretically probe the mechanism of selective growth of monolayer Fe3GeTe2 on various epitaxial substrates. Thermodynamic analysis shows that the corresponding phase-pure chemical potential windows for the selective growth of Fe3GeTe2 can be reasonably attained in ternary phase space on insulating and chemically inert c-plane sapphire and Ga2O3(0001) substrates by properly modulating the interfacial interaction and employing suitable feedstocks to avoid competitive growth of possible impurity phases with different stoichiometry ratios. It is also revealed that both the weak edge-substrate interaction and interlayer coupling of Fe3GeTe2 together lead to a surface-dominated nucleation behavior and, thereby, energetically favor lateral growth of the monolayer rather than vertical growth of the multilayer. Importantly, straight protocols for the experimentally selective growth of phase-pure ternary Fe3GeTe2 are also provided by establishing the relationship between the feedstock chemical potential and growth parameters on a thermochemical basis. Our insightful study can also be reasonably extended to guide future experimental design for the selective growth of other multicomponent 2D materials.

Cr2O3–NiO mixed oxides thin films for p-type transparent conductive electrodes

The Cr2O3–NiO mixed oxides’ thin films were formed by means of the layer-by-layer magnetron sputtering deposition of Cr2O3, NiO, and Cr2O3 layers on c-plane sapphire substrates. These thin-film structures, subjected to subsequent annealing, constituted a combination of the monocrystalline (0001) Cr2O3 and nonordered nickel oxide phase, which was a mixture of NiO and Ni2O3. The annealing at 900 and 1000 °С in air facilitated the diffusion of Ni and Cr atoms into the layers. Varying the annealing time allowed us to control the uniformity of the Ni and Cr distribution, the microrelief of the film surface, the transmittance in the visible region, and the sheet resistance of the Cr2O3–NiO thin-film structures. Thus, the films annealed at 900 °C during 30 min were characterized by a uniform distribution, a relatively weakly developed surface, a low sheet resistance, and the highest Haacke's Figure of Merit of 1.49 × 10–9 Ω–1. The formation of mixed Cr2O3–NiO oxides by the proposed approach was found to be an effective way to improve the performances of Cr2O3 based p-type transparent conductive electrodes.

Influence of Synthesis Parameters on Structure and Characteristics of the Graphene Grown Using PECVD on Sapphire Substrate.

The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique. The decomposition of methane, which is used as a precursor gas, is achieved without the need for remote plasma. Raman spectroscopy, atomic force microscopy and resistance characteristic measurements were performed to investigate the potential of graphene for use in sensing applications. We show that the thickness and quality of graphene film greatly depend on the CH4/H2 flow ratio, as well as on chamber pressure during the synthesis. By varying these parameters, the intensity ratio of Raman D and G bands of graphene varied between ~1 and ~4, while the 2D to G band intensity ratio was found to be 0.05-0.5. Boundary defects are the most prominent defect type in PECVD graphene, giving it a grainy texture. Despite this, the samples exhibited sheet resistance values as low as 1.87 kΩ/□. This reveals great potential for PECVD methods and could contribute toward efficient and straightforward graphene growth on various substrates.

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga2O3 films and the applications in ultraviolet photodetectors

In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga2O3 films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm2/V·s and 3.33 × 1016 cm−3, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.

Epitaxial growth and characterization of copper gallate (CuGa2O4) thin films by pulsed laser deposition

High-quality crystalline copper gallate (CuGa2O4) thin films were grown on c-plane sapphire substrates using the pulsed laser deposition (PLD) technique by optimizing the growth parameters (i.e., temperature, oxygen chamber pressure, and laser energy density). The obtained XRD patterns validated that the preferred orientation of the crystalline CuGa2O4 thin film is along the [111] direction, and the crystallinity of the films improved with increasing substrate temperature while maintaining a constant O2 pressure, as assessed by measuring the full width at half maximum (FWHM) of the prominent (222) plane. Reducing the oxygen pressure leads to the emergence of β-Ga2O3 peaks rather than the CuGa2O4 peaks due to the incomplete oxidation of copper (Cu). Subsequent XRD phi (φ) scans revealed a sixfold rotational symmetry of CuGa2O4 and a 30° epitaxial relationship between the film and the sapphire substrate. X-ray photoelectron spectroscopy (XPS) spectra confirmed the presence of Cu1+, Cu2+, and Ga3+ oxidation states in the films. Increasing laser energy density resulted in the complete oxidation of Cu and an increase in the film thickness from 51.8 nm to 183.4 nm. The direct bandgap of CuGa2O4 films was determined to be approximately 4.50 eV by analyzing the UV–Vis absorbance spectra using the Tauc equation. The refractive index was found to be approximately 2.05 ± 0.01 based on the spectroscopic ellipsometry data. While the impact of increasing laser energy density was negligible on the parameters such as crystal structure, rotational symmetry, oxidation states of gallium (Ga), oxygen (O), bandgap, and refractive index of CuGa2O4 thin film, notable alterations in the oxidation state of Cu and film thickness were observed. The surface roughness (Rrms) measured from AFM images showed a strong correlation with the values derived from ellipsometry analysis.

High-performance solar-blind photodetector of β-Ga2O3 grown on sapphire with embedding an ultra-thin AlN buffer layer

The authors reported the MOCVD growth of high-quality β-Ga2O3 on c-plane sapphire substrate, resulting in the achievement of high performance solar blind deep UV photodetectors by introducing an ultra-thin AlN buffer seed layer (BSL). Compared with the direct growth of Ga2O3 on the sapphire, the oxygen vacancy of β-Ga2O3 is reduced after introducing an AlN BSL and the full width at half maximum (FWHM) of (-201) diffraction peak becomes narrower. The dark current is reduced by 1000 times and from 10−10 A down to 10−13 A for the metal-semiconductor-metal planner photodetector of β-Ga2O3 thin film with the AlN BSL. And the detectivity reaches 4.65×1015 cm·Hz1/2·W at 5 V bias. This improvement in performance is derived from the improvement of the growth quality of β-Ga2O3 mediated by the AlN BSL due to the decrease of lattice mismatch. The defects in β-Ga2O3 are reduced, the carrier concentration is reduced, the Fermi level is shifted, the depletion region is widened, the probability of electron tunneling in the dark state is reduced, and the dark current is effectively reduced.

Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates

GeSn films were simultaneously deposited on Si (100), Si (111), c-plane sapphire (Al2O3), and fused silica substrates to investigate the impact of the substrate on the resulting GeSn film. The electronic, structural, and optical properties of these films were characterized by temperature-dependent Hall-effect measurements, x-ray diffractometry, secondary ion mass spectrometry, and variable angle spectroscopic ellipsometry. All films were polycrystalline with varying degrees of texturing. The film on Si (100) contained only GeSn (100) grains, 40.4 nm in diameter. The film deposited on Si (111) contained primarily GeSn (111) grains, 36.4 nm in diameter. Both films deposited on silicon substrates were fully relaxed. The layer deposited on Al2O3 contained primarily GeSn (111) grains, 41.3 nm in diameter. The film deposited on fused silica was not textured, and the average grain size was 35.0 nm. All films contained ∼5.6 at. % Sn throughout the layer, except for the film deposited on Al2O3, which contained 7.5% Sn. The films deposited on Si (111), Al2O3, and fused silica exhibit p-type conduction over the entire temperature range, 10–325 K, while the layer deposited on the Si (100) substrate shows a mixed conduction transition from p-type at low temperature to n-type above 220 K. From ∼175 to 260 K, both holes and electrons contribute to conduction. Texturing of the GeSn film on Si (100) was the only characteristic that set this film apart from the other three films, suggesting that something related to GeSn (100) crystal orientation causes this transition from p- to n-type conduction.

High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam

We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a previously reported multi-step growth method. Omega-2theta scans confirmed the GaAs (111) orientation. Samples grown at 700 °C displayed the highest crystal quality with minimal defects and strain, evidenced by narrow FWHM values of the rocking curve. By varying the As/Ga flux ratio and the growth temperature, we significantly improved the quality of the GaAs layer on sapphire, as compared to that obtained in multi-step studies. Photoluminescence measurements at room temperature and 77 K further support these findings. This study underscores the critical role of the As/Ga flux ratio and growth temperature in optimizing GaAs epitaxial growth on sapphire.

Low-temperature growth of high-quality VO2 epitaxial film on c-plane sapphire by reactive magnetron sputtering

Low-temperature growth of high-quality VO2 epitaxial film on c-plane sapphire by reactive magnetron sputtering

Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2.

Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (XD) emission from MoS2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS2 layers, quenches XD emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad XD background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.

Novel solution-gated transistor sensor-based SnO2 epitaxial thin films grown by pulsed laser deposition for nitrite detection.

A solution-gate controlled thin-film transistor with SnO2 epitaxial thin films (SnO2-SGTFT) is successfully utilized for highly sensitive detection of nitrite. The SnO2 films are deposited as channel materials on a c-plane sapphire (c-Al2O3) substrate through pulsed laser deposition (PLD), with superior crystal quality and out-of-plane atomic ordering. PtAu NPs/rGO nanocomposites are electrodeposited on agold electrode to function as a transistor gate to further enhance the nitrite catalytic performance of thedevice. The change in effective gate voltage due to the electrooxidation of nitrite on the gate electrode is the primary sensing mechanism of the device. Based on the inherent amplification effect of transistors, the superior electrical properties of SnO2, and the high electrocatalytic activity of PtAu NPs/rGO, the SnO2-SGTFT sensor has a low detection limit of 0.1nM and a wide linear detection range of 0.1nM ~ 50mM at VGS = 1.0V. Furthermore, the sensor has excellent characteristics such as rapid response time, selectivity, and stability. The practicability of the device has been confirmed by the quantitative detection of nitrite in natural lake water. SnO2 epitaxial films grown by PLD provide a simple and efficient way to fabricate nitrite SnO2-SGTFT sensors in environmental monitoring and food safety, among others. It also provides a reference for the construction of other high-performance thin-film transistor sensors.

Modulating growth of graphene on sapphire by chemical vapor deposition

The direct growth of graphene on insulating substrates presents significant promise for the advancement of next-generation semiconductor technologies. Here, the synthesis of graphene directly on sapphire substrates via chemical vapor deposition (CVD) is reported. The CVD growth parameters are systematically manipulated to optimize the crystal quality of graphene. Furthermore, the dependency of graphene growth on the crystallographic orientation of the sapphire substrate is explored to elucidate the underlying mechanisms. It is found that robust C-O chemical bonds are established between the oxygen atoms on the sapphire surface and the carbon atoms in the graphene, predominantly influencing the nucleation process. The oxygen-rich nature of the c-plane sapphire surface contributes to a higher graphene nucleation density and the formation of smaller grains comparing to r-plane sapphire. Accordingly, high quality and uniform monolayer graphene is successfully obtained on both c-plane and r-plane sapphire.

Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition.

α-Ga2O3 films were grown on a c-plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-Ga2O3 film quality was investigated. The growth rate monotonically increased with increasing Ga supply rate. However, as the Ga supply rate was higher than 0.1 mmol/min, the growth rate further increased with increasing HCl supply rate. The surface roughness was improved by HCl support when the Ga supply rate was smaller than 0.07 mmol/min. The crystallinity of the α-Ga2O3 films exhibited an improvement with an increase in the film thickness, regardless of the solution preparation conditions, Ga supply rate, and HCl supply rate. These results indicate that there is a low correlation between the improvement of surface roughness and crystallinity in the α-Ga2O3 films grown under the conditions described in this paper.

Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high voltage applications

Enhancement mode thin film transistors (TFTs) having different geometries were fabricated on the Zinc gallium oxide (ZnGa2O4) epilayer grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). A field emission scanning electron microscope, atomic force microscopy, and X-ray diffraction were employed to conduct a detailed analysis of the film composition, morphology, and crystal structure. The distance between the source-to-gate and gate length was kept to be 7 μm and 3 μm in all the devices with varying gate-to-drain lengths of 10, 20, and 30 μm. Moreover, neutral beam etching technology was employed to isolate the individual devices and reduce the defects induced by plasma etching. It was found that the threshold voltage changes from 6 V to 7.6 V with the increase in source to drain length from 20 μm to 40 μm. The On/Off ratio of the devices was found to be 105, with a maximum current around 1 μA/mm. Additionally, the device breakdown voltage increased from 240 V to about 656 V with the increase in the device length. The results demonstrate the fabrication of the high breakdown voltage ZnGa2O4-based TFT and establish the co-relation of the source to drain length with the device characteristics.

Growth of Monolayer MoS2 Flakes via Close Proximity Re-Evaporation.

We report a two-step growth process of MoS2 nanoflakes using a low-pressure chemical vapor deposition technique. In the first step, a MoS2 layer was synthesized on a c-plane sapphire substrate. This layer was subsequently re-evaporated at a higher temperature to form mono- or few-layer MoS2 flakes. As a result, the close proximity re-evaporation enabled the growth of pristine MoS2 nanoflakes. Atomic force microscopy analysis confirmed the synthesis of nanoclusters/nanoflakes with lateral dimensions of over 10 μm and a flake height of approximately 1.3 nm, demonstrating bi-layer MoS2, whereas transmission electron microscopy analysis revealed triangular MoS2 nanoflakes, with a diffraction pattern proving the presence of single crystalline hexagonal MoS2. Raman data revealed the typical modes of high-quality MoS2 nanoflakes. Finally, we presented the photocurrent dependence of a MoS2-based photoresist under illumination with light-emitting diode of 405 nm wavelength. The measured current-voltage dependence across various luminous flux outlined the sensitivity of MoS2 to polarized light and thus opens further opportunities for applications in high-performance photodetectors with polarization sensitivity.

Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption

Transient surface photovoltage (SPV) spectroscopy, optical absorption, and photoconductivity (PC) were applied to study electronic transitions in (-201) β-Ga2O3 and (001) κ-Ga2O3 epitaxial layers on c-plane sapphire substrates. SPV signals were distinguished for charge separation near the surface and near the layer/substrate interface. The bandgaps of β-Ga2O3 and κ-Ga2O3 epitaxial layers were found to be, respectively, about 4.75 and 4.79 eV from optical absorption measurements, about 4.8 and 4.9 eV from PC, and 4.65 and 4.9 (near the surface) from SPV measurements. Near the κ-Ga2O3 layer/substrate interface SPV instead gives a value of 4.75 eV, possibly related to the presence of an interlayer. Defect-related transitions with onset energies at about 4.5, 4.1, and 3.5 eV were observed along the whole β-Ga2O3 layer cross-section. In contrast, defects related to different transitions were differently distributed in κ-Ga2O3 epitaxial layers: transitions setting on at about 4.3 eV originate from defects uniformly distributed across the layer, while transitions starting at 2.4 eV and 1.7 eV were respectively connected with defects located near the surface or near the layer/substrate interface. The PC measurements at photo-excitation energy above the bandgap indicated that defect densities and recombination losses were much larger in κ-Ga2O3 than in β-Ga2O3.

Investigation of the nano and micromechanical performance of β-Ga2O3 epitaxial films on sapphire using nanoindentation

Beta-phase gallium oxide (β-Ga2O3) has attracted considerable attention because of its excellent properties as one of the emerging semiconductor materials. However, not only the fabrication of high quality β-Ga2O3 thin films on heterogeneous substrates is challenging, but there is also a lack of research pertaining to their mechanical properties. In this work, the mechanical properties of β-Ga2O3 epitaxial films of varying thicknesses on c-plane sapphire substrates fabricated via plasma enhanced chemical vapor deposition were investigated through nanoindentation and nano-scratch experiments. The β-Ga2O3 hetero-epitaxial thin films exhibit preferential orientation growth along the (−201) plane when deposited on the c-plane sapphire substrate. The elastic modulus, hardness, and fracture toughness of β-Ga2O3 films grown on sapphire substrates are 249.1 ± 14.1 GPa, 18.7 ± 0.9 GPa, and 1.822 MPa m1/2, respectively. The elastic-plastic behavior of β-Ga2O3 thin films with varying thicknesses is consistent. The critical loads for the elastic-plastic and plastic-brittle transitions are 9.4 ± 1.8 mN and 50.7 ± 2.7 mN respectively, while the scratch depths for the same are 91.8 ± 7.8 nm and 216.4 ± 10.1 nm, respectively. The critical adhesion and adhesive energy for the desquamation of the β-Ga2O3 film from the substrate are dependent on the thickness of the film. These results establish an experimental basis for understanding the mechanical behavior in the preparation and application of β-Ga2O3 thin films grown on sapphire substrates.

Performance enhancement of solar-blind UV photodetector by doping silicon in β-Ga2O3 thin films prepared using radio frequency magnetron sputtering

Si-doped β-Ga2O3 thin films were prepared on c-plane (001) sapphire substrates by radio frequency magnetron sputtering, and then annealed at 800 °C under Ar atmosphere for 1 h. Finally, Metal-Semiconductor-Metal type solar-blind UV photodetectors were prepared using the annealed β-Ga2O3 films. The structure, composition, optical properties and photoelectric detection performance of the films were studied using XRD, EDS, UV–Vis, PL spectroscopy and Keithley-4200 system. Results show that after silicon doping, the preferred orientation of the β-Ga2O3 film varies from (−201) to (200) and (201) crystal planes. EDX and XPS results show that 2.34 at% silicon was doped into Ga2O3 films by substituting Ga atoms. Both XPS and PL results show a decline of defect concentration within the Si-doped films, including oxygen vacancy. Si-doped β-Ga2O3 films exhibit enhanced solar-blind detection performance, with lower dark current (32.2 × 10−12 A) under 15 V bias, higher light-to-dark current ratio (3.2 × 104), higher light power density of 2.4 μW/cm2, and shorter response time. The resultant responsivity, detectivity, and external quantum efficiency are 1.146A/W, 7.14 × 1011Jones, and 5.605 %, respectively, more than one order of magnitude higher than the undoped device. This work indicates that Si is an effective n-type dopant for improving the detection performance of β-Ga2O3 film based solar-blind UV photodetectors.

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Growth of gallium nitride (GaN) inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets. In this work, GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates (PSS) by metal organic vapor phase epitaxy (MOVPE). The influences of growth conditions on the surface morphology are experimentally studied and explained by Wulff constructions. The competition of growth rate among {0001}, { }, and { } facets results in the various surface morphologies of GaN. A higher growth temperature of 985 °C and a lower Ⅴ/Ⅲ ratio of 25 can expand the area of { } facets in GaN inverted pyramids. On the other hand, GaN inverted pyramids with almost pure { } facets are obtained by using a lower growth temperature of 930 °C, a higher Ⅴ/Ⅲ ratio of 100, and PSS with pattern arrangement perpendicular to the substrate primary flat.