Several new device technologies were characterized for rapid-annealing following a burst of fast neutrons. The annealing responses for the breakout devices were found to be consistent with those predicted from existing models. An analytical expression derived from the model is presented. Several of the breakout devices studied indicated that digital integrated circuits produced from some of the technologies studied could have neutron hardness levels in excess of 1×1015 nvt (E > 10 keV). In addition the neutron response data for FAST and ALS nand gates are presented.