Photodetectors (PDs) with band selection functions are highly desirable for the future complex environment. Currently, band-selective PDs are typically realized by integrating various optical filters with broadband PDs or constructing heterojunction with multi-photo-absorbing layers. However, these methods cause increased manufacturing costs and device integration complexity. Here, a novel solution-processed perovskite bulk heterojunction (BHJ) layer (MAPbI3:MA3Bi2I9) is developed as photo-absorbing layer, and an effective interface engineering is proposed to selectively shield photo-generated carriers in the BHJ. By regulating the bias voltage, the tunneling probability of photo-generated carrier of MAPbI3 in the BHJ layer can be easily controlled, enabling band-selective capability. The PD exhibits a superior photo-response in the visible and near-infrared region at the -0.3V, with responsivity of 26.5 and 70.2mAW-1 for 500 and 740nm, respectively. But, at the 0.1V, the PD responds only to the visible region with a photo-response of 3.7mAW-1 (500nm) and maintains a high rejection ratio (R500 nm/R740 nm) of 28.5. This PD also exhibits a fast response speed (rise time: 220µs, fall time: 240µs). This work provides a novel strategy to fabricate a cost-effective multifunctional photodetector for future advanced optoelectronic system.
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