Bulk Dirac Fermions Research Articles

Threshold photoproduction of ηc and ηb using holographic QCD

We discuss the possibility that threshold photoproduction of ηc,b may be sensitive to the pseudovector 1+− glueball exchange. We use the holographic construction to identify the pseudovector glueball with the Kalb-Ramond field, minimally coupled to bulk Dirac fermions. We derive the holographic C-odd form factor and its respective charge radius. Using the pertinent Witten diagrams, we derive and analyze the differential photoproduction cross section for ηc,b in the threshold regime, including the interference from the dual bulk photon exchange with manifest vector dominance. The possibility of measuring this process at current and future electron facilities is discussed. Published by the American Physical Society 2024

Topological nonsymmorphic insulator versus Dirac semimetal in KZnBi

KZnBi was discovered recently as a new three-dimensional Dirac semimetal with a pair of bulk Dirac fermions in contrast to the trivial insulator reported earlier. In order to address this discrepancy, we have performed electronic structure and topological state analysis of KZnBi using the local, semilocal, and hybrid exchange-correlation (XC) functionals within the density functional theory framework. We find that various XC functionals, including the SCAN meta-GGA and hybrid functional with 25% Hartree–Fock (HF) exchange (HSE06), resolve a topological nonsymmorphic insulator state with the glide-mirror protected hourglass surface Dirac fermions. By carefully tuning the XC strength in modified Becke-Johnson (mBJ) potential, we recover the correct orbital ordering and Dirac semimetal state of KZnBi. We further show that increasing the default HF exchange in hybrid functional (40%) can also capture the desired Dirac semimetal state with the correct orbital ordering of KZnBi. The calculated energy dispersion and carrier velocities of Dirac states are found to be in excellent agreement with the available experimental results. Our results demonstrate that KZnBi is a unique topological material where large XC effects are crucial to producing the Dirac semimetal state.

Observation of highly anisotropic bulk dispersion and spin-polarized topological surface states in CoTe2

We present CoTe2 as a new type-II Dirac semimetal supporting Lorentz symmetry violating Dirac fermions in the vicinity of the Fermi energy. By combining first principle ab-initio calculations with experimental angle-resolved photo-emission spectroscopy results, we show the CoTe2 hosts a pair of type-II Dirac fermions around 90 meV above the Fermi energy. In addition to the bulk Dirac fermions, we find several topological band inversions in bulk CoTe2, which gives rise to a ladder of spin-polarized surface states over a wide range of energies. In contrast to the surface states which typically display Rashba-type in-plane spin splitting, we find that CoTe2 hosts novel out-of-plane spin polarization as well. Our work establishes CoTe2 as a potential candidate for the exploration of Dirac fermiology and applications in spintronic devices, infrared plasmonics, and ultrafast optoelectronics.

Kitkaite NiTeSe, an Ambient‐Stable Layered Dirac Semimetal with Low‐Energy Type‐II Fermions with Application Capabilities in Spintronics and Optoelectronics

AbstractThe emergence of Dirac semimetals has stimulated growing attention, owing to the considerable technological potential arising from their peculiar exotic quantum transport related to their nontrivial topological states. Especially, materials showing type‐II Dirac fermions afford novel device functionalities enabled by anisotropic optical and magnetotransport properties. Nevertheless, real technological implementation has remained elusive so far. Definitely, in most Dirac semimetals, the Dirac point lies deep below the Fermi level, limiting technological exploitation. Here, it is shown that kitkaite (NiTeSe) represents an ideal platform for type‐II Dirac fermiology based on spin‐resolved angle‐resolved photoemission spectroscopy and density functional theory. Precisely, the existence of type‐II bulk Dirac fermions is discovered in NiTeSe around the Fermi level and the presence of topological surface states with strong (≈50%) spin polarization. By means of surface‐science experiments in near‐ambient pressure conditions, chemical inertness towards ambient gases (oxygen and water) is also demonstrated. Correspondingly, NiTeSe‐based devices without encapsulation afford long‐term efficiency, as demonstrated by the direct implementation of a NiTeSe‐based microwave receiver with a room‐temperature photocurrent of 2.8 µA at 28 GHz and more than two orders of magnitude linear dynamic range. The findings are essential to bringing to fruition type‐II Dirac fermions in photonics, spintronics, and optoelectronics.

Majorana zero modes in impurity-assisted vortex of LiFeAs superconductor

The iron-based superconductor is emerging as a promising platform for Majorana zero mode, which can be used to implement topological quantum computation. One of the most significant advances of this platform is the appearance of large vortex level spacing that strongly protects Majorana zero mode from other low-lying quasiparticles. Despite the advantages in the context of physics research, the inhomogeneity of various aspects hampers the practical construction of topological qubits in the compounds studied so far. Here we show that the stoichiometric superconductor LiFeAs is a good candidate to overcome this obstacle. By using scanning tunneling microscopy, we discover that the Majorana zero modes, which are absent on the natural clean surface, can appear in vortices influenced by native impurities. Our detailed analysis reveals a new mechanism for the emergence of those Majorana zero modes, i.e. native tuning of bulk Dirac fermions. The discovery of Majorana zero modes in this homogeneous material, with a promise of tunability, offers an ideal material platform for manipulating and braiding Majorana zero modes, pushing one step forward towards topological quantum computation.

Three-Dimensional Dirac Phonons with Inversion Symmetry.

Dirac semimetals associated with bulk Dirac fermions are well known in topological electronic systems. In sharp contrast, three-dimensional (3D) Dirac phonons in crystalline solids are still unavailable. Here we perform symmetry arguments and first-principles calculations to systematically investigate 3D Dirac phonons in all space groups with inversion symmetry. The results show that there are two categories of 3D Dirac phonons depending on their protection mechanisms and positions in momentum space. The first category originates from the four-dimensional irreducible representations at the high symmetry points. The second category arises from the phonon branch inversion, and the symmetry guarantees Dirac points to be located along the high symmetry lines. Furthermore, we reveal that nonsymmorphic symmetries and the combination of inversion and time-reversal symmetries play essential roles in the emergence of 3D Dirac phonons. Our work not only offers a comprehensive understanding of 3D Dirac phonons but also provides significant guidance for exploring Dirac bosons in both phononic and photonic systems.

Reducing Electronic Transport Dimension to Topological Hinge States by Increasing Geometry Size of Dirac Semimetal Josephson Junctions.

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd_{3}As_{2} is predicted to be a higher-order topological semimetal, possessing three-dimensional bulk Dirac fermions, two-dimensional Fermi arcs, and one-dimensional hinge states. These topological states have different characteristic length scales in electronic transport, allowing one to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd_{3}As_{2}-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding of the higher-order topological phase in a 3D Dirac semimetal.

Dirac fermions and flat bands in the ideal kagome metal FeSn.

A kagome lattice of 3d transition metal ions is a versatile platform for correlated topological phases hosting symmetry-protected electronic excitations and magnetic ground states. However, the paradigmatic states of the idealized two-dimensional kagome lattice-Dirac fermions and flat bands-have not been simultaneously observed. Here, we use angle-resolved photoemission spectroscopy and de Haas-van Alphen quantum oscillations to reveal coexisting surface and bulk Dirac fermions as well as flat bands in the antiferromagnetic kagome metal FeSn, which has spatially decoupled kagome planes. Our band structure calculations and matrix element simulations demonstrate that the bulk Dirac bands arise from in-plane localized Fe-3d orbitals, and evidence that the coexisting Dirac surface state realizes a rare example of fully spin-polarized two-dimensional Dirac fermions due to spin-layer locking in FeSn. The prospect to harness these prototypical excitations in a kagome lattice is a frontier of great promise at the confluence of topology, magnetism and strongly correlated physics.

A general route to form topologically-protected surface and bulk Dirac fermions along high-symmetry lines

The band inversions that generate the topologically non-trivial band gaps of topological insulators and the isolated Dirac touching points of three-dimensional Dirac semimetals generally arise from the crossings of electronic states derived from different orbital manifolds. Recently, the concept of single orbital-manifold band inversions occurring along high-symmetry lines has been demonstrated, stabilising multiple bulk and surface Dirac fermions. Here, we discuss the underlying ingredients necessary to achieve such phases, and discuss their existence within the family of transition metal dichalcogenides. We show how their three-dimensional band structures naturally produce only small kz projected band gaps, and demonstrate how these play a significant role in shaping the surface electronic structure of these materials. We demonstrate, through spin- and angle-resolved photoemission and density functional theory calculations, how the surface electronic structures of the group-X TMDs PtSe2 and PdTe2 are host to up to five distinct surface states, each with complex band dispersions and spin textures. Finally, we discuss how the origin of several recently-realised instances of topological phenomena in systems outside of the TMDs, including the iron-based superconductors, can be understood as a consequence of the same underlying mechanism driving kz-mediated band inversions in the TMDs.

Massive Dirac fermions from holography

We provide a framework to compute the dynamics of massive Dirac fermions using holography. To this end we consider two bulk Dirac fermions that are coupled via a Yukawa interaction and propagate on a gravitational background in which a mass deformation is introduced. Moreover, we discuss the incorporation of this approach in semiholography. The resulting undoped fermionic spectral functions indeed show that the Yukawa coupling induces a gap in the holographic spectrum, whereas the semiholographic extension is in general gapped but additionally contains a quantum critical point at which the effective fermion mass vanishes and a topological phase transition occurs. Furthermore, when introducing doping, the fermionic spectral functions show a quantum phase transition between a gapped material and a Fermi liquid.

Class of diatomic ferroelectrics with multifunctional properties: IV-VI compounds in the distorted NiAs-type structure

Ferroelectrics have attracted a great deal of attention, but diatomic ferroelectrics are less common. Here we establish a class of diatomic ferroelectrics in the distorted NiAs-type structure based on state-of-the-art first-principles calculations. These compounds, with giant Rashba effect, possess rich phases, ranging from ferroelectric semiconductors to ferroelectric semimetals. Topological surface states and type-II bulk Dirac fermions are found in the undistorted phases. This class of multifunctional materials has potential applications in spin-orbitronics.

Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides.

Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied bulk properties, while their single-layer variants have become one of the most prominent examples of two-dimensional materials beyond graphene. Their disparate ground states largely depend on transition metal d-electron-derived electronic states, on which the vast majority of attention has been concentrated to date. Here, we focus on the chalcogen-derived states. From density-functional theory calculations together with spin- and angle-resolved photoemission, we find that these generically host a co-existence of type-I and type-II three-dimensional bulk Dirac fermions as well as ladders of topological surface states and surface resonances. We demonstrate how these naturally arise within a single p-orbital manifold as a general consequence of a trigonal crystal field, and as such can be expected across a large number of compounds. Already, we demonstrate their existence in six separate TMDs, opening routes to tune, and ultimately exploit, their topological physics.

A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

Pulsed lasers operating in the mid-infrared (3–20 μm) are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism remains a significant technological challenge. Here we show that bulk Dirac fermions in molecular beam epitaxy grown crystalline Cd3As2, a three-dimensional topological Dirac semimetal, constitutes an exceptional ultrafast optical switching mechanism for the mid-infrared. Significantly, we show robust and effective tuning of the scattering channels of Dirac fermions via an element doping approach, where photocarrier relaxation times are found flexibly controlled over an order of magnitude (from 8 ps to 800 fs at 4.5 μm). Our findings reveal the strong impact of Cr doping on ultrafast optical properties in Cd3As2 and open up the long sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

Universal conductance fluctuations in Dirac semimetalCd3As2nanowires

Three-dimensional Dirac semimetals host bulk Dirac fermions characterized by a linear dispersion relation in momentum space along all three dimensions. It has been theoretically predicted that the breaking of ${C}_{4}$ rotational crystalline symmetry in the Dirac semimetal $\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2}$ may give rise to the massive Dirac fermions. Here we report the phase-coherent transport in $\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2}$ nanowires studied by measuring the universal conductance fluctuations (UCFs). It is found that the UCF amplitude is largely suppressed at the Dirac point by sweeping the magnetic field at different gate voltages, which is ascribed to the breaking of the ${C}_{4}$ rotational symmetry-induced band-gap opening. The temperature dependence of resistance demonstrates a magnetic-field-induced metal-insulator transition, consisting of the band-gap opening. Moreover, the UCF amplitude is reduced by a factor of $\ensuremath{\sim}2\sqrt{2}$ in the presence of a magnetic field, suggesting the phase transition from a Dirac-to-Weyl semimetal by breaking time-reversal symmetry.

Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption.

Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.

Topological tuning in three-dimensional dirac semimetals.

We study with first-principles methods the interplay between bulk and surface Dirac fermions in three dimensional Dirac semimetals. By combining density functional theory with the coherent potential approximation, we reveal a topological phase transition in Na_{3}Bi_{1-x}Sb_{x} and Cd_{3}[As_{1-x}P_{x}]_{2} alloys, where the material goes from a Dirac semimetal to a trivial insulator upon changing Sb or P concentrations. Tuning the composition allows us to engineer the position of the bulk Dirac points in reciprocal space. Interestingly, the phase transition coincides with the reversal of the band ordering between the conduction and valence bands.

Gate-tuned normal and superconducting transport at the surface of a topological insulator

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulators.