Bulk Acoustic Modes Research Articles

Broadband magnetoelectric antenna driven by multiple high-overtone bulk acoustic wave modes

High-overtone bulk acoustic waves driven magnetoelectric (ME) antennas operate in the acoustic resonant frequency range, exhibiting continuous narrowband electromagnetic radiation. ME antennas based on cooperative excitation of multiple high-overtone bulk acoustic waves are expected to achieve broadband performance and are worthy of in-depth exploration. High-overtone bulk acoustic resonator (HBAR) antennas with polished and rough acoustic reflection interfaces were fabricated and tested to investigate the influence mechanisms of acoustic modes in the HBAR on the radiation bandwidth, as well as the relationship between antenna impedance and radiation response. Far-field radiation characteristics indicate that the antenna with rough acoustic reflection interfaces featuring more high-overtone bulk acoustic wave modes suppress radiation dips of up to 5 dB at anti-resonant frequencies without sacrificing radiation gain. The radiation gain of the antenna was calculated using the gain-comparison method to be −35 dBi, with a −3 dB bandwidth of 120 MHz and a fractional bandwidth of up to 11.4%. Finally, a comparison of the radiation characteristics of the HBAR piezoelectric antenna without the magnetic film demonstrates that the broadband radiation of the HBAR ME antenna originates from dynamic magnetic flux driven by high-overtone bulk acoustic waves.

4H silicon carbide bulk acoustic wave gyroscope with ultra-high Q-factor for on-chip inertial navigation

Inertial navigation on a chip has long been constrained by the noise and stability issues of micromechanical Coriolis gyroscopes, as silicon, the dominant material for microelectromechanical system devices, has reached the physical limits of its material properties. To address these challenges, this study explores silicon carbide, specifically its monocrystalline 4H polytype, as a substrate to improve gyroscope performance due to its low phonon Akhiezer dissipation and its isotropic hexagonal crystal lattice. We report on low-noise electrostatic acoustic resonant gyroscopes with mechanical quality factors exceeding several millions, fabricated on bonded 4H silicon carbide-on-insulator wafers. These gyroscopes operate using megahertz frequency bulk acoustic wave modes for large open-loop bandwidth and are tuned electrostatically using capacitive transducers created by wafer-level deep reactive ion etching. Experimental results show these gyroscopes achieve superior performance under various conditions and demonstrate higher quality factors at increased temperatures, enabling enhanced performance in an ovenized or high-temperature stabilized configuration.

Piezoaxionic effect

Axion dark matter (DM) constitutes an oscillating background that violates parity and time-reversal symmtries. Inside piezoelectric crystals, where parity is broken spontaneously, this axion background can result in a stress. We call this new phenomenon “the piezoaxionic effect.” When the frequency of axion DM matches the natural frequency of a bulk acoustic normal mode of the piezoelectric crystal, the piezoaxionic effect is resonantly enhanced and can be read out electrically via the piezoelectric effect. We explore all axion couplings that can give rise to the piezoaxionic effect—the most promising one is the defining coupling of the QCD axion, through the anomaly of the strong sector. We also point our another, subdominant phenomenon present in all dielectrics, namely the “electroaxionic effect.” An axion background can produce an electric displacement field in a crystal which in turn will give rise to a voltage across the crystal. The electroaxionic effect is again largest for the axion coupling to gluons. We find that this model-independent coupling of the QCD axion may be probed through the combination of the piezoaxionic and electroaxionic effects in piezoelectric crystals with aligned nuclear spins, with near-future experimental setups applicable for axion masses between 10−11 eV and 10−7 eV, a challenging range for most other detection concepts. Published by the American Physical Society 2024

Free-space coupling and characterization of transverse bulk phonon modes in lithium niobate in a quantum acoustic device

Transverse bulk phonons in a multimode integrated quantum acoustic device are excited and characterized via their free-space coupling to a three-dimensional (3D) microwave cavity. These bulk acoustic modes are defined by the geometry of the Y-cut lithium niobate substrate in which they reside and couple to the cavity electric field via a large dipole antenna, with an interaction strength on the order of the cavity linewidth. Using finite element modeling, we determine that the bulk phonons excited by the cavity field have a transverse polarization with a shear velocity matching previously reported values. We demonstrate how the coupling between these transverse acoustic modes and the electric field of the 3D cavity depends on the relative orientation of the device dipole, with a coupling persisting to room temperature. Our study demonstrates the versatility of 3D microwave cavities for mediating contact-less coupling to quantum, and classical, piezoacoustic devices.

Observation of thermal acoustic modes of a droplet coupled to an optomechanical sensor

The bulk acoustic modes of liquid droplets, well understood from a theoretical perspective, have rarely been observed experimentally. Here, we report the indirect observation of acoustic vibrational modes in a picoliter-scale droplet, extending up to ∼40 MHz. This was achieved by coupling the droplet to an ultra-sensitive optomechanical sensor, which operates in a thermal-noise limited regime and with a substantial contribution from acoustic noise in the ambient medium. The droplet vibrational modes manifest as Fano resonances in the thermal noise spectrum of the sensor. This is among the few reported observations of droplet acoustic modes and of Fano interactions in a coupled mechanical oscillator system driven only by thermal Brownian motion.

Macroscopic Quantum Test with Bulk Acoustic Wave Resonators.

Recently, solid-state mechanical resonators have become a platform for demonstrating nonclassical behavior of systems involving a truly macroscopic number of particles. Here, we perform the most macroscopic quantum test in a mechanical resonator to date, which probes the validity of quantum mechanics by ruling out a classical description at the microgram mass scale. This is done by a direct measurement of the Wigner function of a high-overtone bulk acoustic wave resonator mode, monitoring the gradual decay of negativities over tens of microseconds. While the obtained macroscopicity of μ=11.3 is on par with state-of-the-art atom interferometers, future improvements of mode geometry and coherence times could test the quantum superposition principle at unprecedented scales and also place more stringent bounds on spontaneous collapse models.

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

AbstractPiezoelectric microelectromechanical systems (MEMS) are used as sensors, actuators, energy harvesters, accelerometers, and communication modules. Aluminum nitride (AlN) is an especially attractive piezoelectric material because its fabrication process allows it to be integrated into semiconductor circuitry to deliver a fully integrated solution. Microelectromechanical resonators with AlN sandwiched between n‐type silicon (Si) and top metal electrode with and without a silicon oxide layer are designed and fabricated. The effect of the oxide film is up to a fourfold increase in quality factor (Q) that is consistent from very high frequency (VHF) to super high frequency (SHF). This effect is demonstrated using thin plate bulk acoustic wave modes from 70–80 MHz using the second contour mode and first width extensional mode and from 9.5–10.5 GHz using high overtone thickness modes. To explore potential applications of AlN‐transduced Q‐enhanced MEMS devices in harsh environments, measurements from −200 °C to +200 °C are performed. The Q enhancement is persistent across a wide temperature range for both VHF and SHF resonators with the added oxide layer. Furthermore, AlN‐on‐Si resonators that have a comparable temperature coefficient of frequency to silicon carbide‐based resonators in commercial applications are demonstrated.

Electro-mechanical tuning of high-Q bulk acoustic phonon modes at cryogenic temperatures

We investigate the electromechanical properties of quartz bulk acoustic wave resonators at extreme cryogenic temperatures. By applying a DC bias voltage, we demonstrate broad frequency tuning of high-Q phonon modes in a quartz bulk acoustic wave cavity at cryogenic temperatures of 4 K and 20 mK. More than 100 line-widths of tuning of the resonance peak without any degradation in loaded quality factor, which are as high as 1.73×109, is seen for high order overtone modes. For all modes and temperatures, the observed coefficient of frequency tuning is ≈ 3.5 mHz/V per overtone number n corresponding to a maximum of 255.5 mHz/V for the n = 73 overtone mode. No degradation in the quality factor is observed for any value of an applied biasing field.

Ultrathin Piezoelectric Resonators Based on Graphene and Free-Standing Single-Crystal BaTiO3.

Suspended piezoelectric thin films are key elements enabling high-frequency filtering in telecommunication devices. To meet the requirements of next-generation electronics, it is essential to reduce device thickness for reaching higher resonance frequencies. Here, the high-quality mechanical and electrical properties of graphene electrodes are combined with the strong piezoelectric performance of the free-standing complex oxide, BaTiO3 (BTO), to create ultrathin piezoelectric resonators. It is demonstrated that the device can be brought into mechanical resonance by piezoelectric actuation. By sweeping the DC bias voltage on the top graphene electrode, the BTO membrane is switched between the two poled ferroelectric states. Remarkably, ferroelectric hysteresis is also observed in the resonance frequency, magnitude and Q-factor of the first membrane mode. In the bulk acoustic mode, the device vibrates at 233 GHz. This work demonstrates the potential of combining van der Waals materials with complex oxides for next-generation electronics, which not only opens up opportunities for increasing filter frequencies, but also enables reconfiguration by poling, via ferroelectric memory effect.

Role of Confined Optical Phonons in Exciton Generation in Spherical Quantum Dot.

Optical control of excitonic states in semiconducting quantum dots has enabled it to be deployed as a qubit for quantum information processing. For self-assembled quantum dots, these excitonic states couple with phonons in the barrier material, for which the previous studies have shown that such exciton—phonon coupling can also lead to the generation of exciton, paving the way for their deployment in qubit-state preparation. Previous studies on self-assembled quantum dots comprising polar materials have considered exciton—phonon coupling by treating phonon modes as bulk acoustic modes only, owing to nearly the same acoustic property of the dot and barrier material. However, the dimensional confinement leads to significant modification phonon modes, even though acoustic confinement is weak but optical confinement cannot be overlooked. In this paper, we investigate for the first time the exciton—optical phonon coupling using dielectric continuum model duly accounting for the dimensional confinement leading to exciton generation. We report that at low temperatures (below 10 K), the exciton creation rate attributed to confined optical phonon is approximately 5.7 times (~6) slower than bulk acoustic phonons, which cannot be ignored, and it should be accounted for in determining the effective phonon assisted exciton creation rate.

Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator

This work reports the successful excitation of a novel bulk acoustic mode whose actuation and sensing are facilitated by the support transducer topology (STT). The design methodology concurrently supports low motional impedance and high energy confinement features which are crucial for frequency reference components in Radio Frequency communication. A conventional bulk mode operating in the width extension (WE) mode is deployed to efficiently excite the higher-order radial mode using the STT design feature of resonant frequency matching. The thin-film piezoelectric on substrate support transducers excited in a WE mode is mechanically coupled to the bulk silicon allowing the acoustic energy of the MEMS resonator to be stored maximally in the high-quality factor (Q) resonant tank, thereby alleviating the overall losses due to low-Q of the piezoelectric thin film and electrode material. The resonator exhibits a Q of 19 728 at 63.56 MHz resonant frequency with a motional resistance (R m) of 368 Ω when measured in vacuum at a power level of 0 dBm. Under cryogenic measurement conditions, the device recorded a Q of 24 153 at 15 K. A standalone WE resonator is studied to put a spotlight on the quality factor enhancement technique using the STT. The STT enabled novel bulk mode enhances the overall Q by 320% and halves the R m. When implemented as an oscillator, its performance exceeds the Global System for Mobile communication standards phase noise (PN) requirements. PN of −136.95 dBc Hz−1 and −161.52 dBc Hz−1 at 1 kHz and 1 MHz offset, respectively, were recorded when normalized to a carrier frequency of 13 MHz.

Far-infrared frequency mode conversion using bulk acoustic phonon modes

The ability to design, fabricate and control systems which can convert photons with dissimilar frequencies has technological implications in classical as well as quantum communications. Laser heating and thermal mechanical motion in conventional micro/nanoscale optomechanical systems hamper the use of these systems in quantum information processing networks. In contrast, we propose an unconventional system comprising of a bulk quartz crystal placed within a Fabry-P\(e^{'}\)rot cavity. The pumping laser is in the far-infrared region. We explore the possibility of efficient mode conversion between two optical modes supported by the system, mediated by the bulk acoustic phonons of the quartz crystal. Unlike the earlier optomechanical systems, the dark mode in our proposed system is not decoupled from the mechanical mode and yet it enables the efficient mode conversion. The novel results found in our study can be used to harness the dark state for quantum state transfer. The proposed system is robust against excessive heating.

High-temperature EMAT with double-coil configuration generates shear and longitudinal wave modes in paramagnetic steel

The non-contact nature of electromagnetic acoustic transducers (EMATs) allows a continuous operation at high temperatures without physical coupling. The existing high-temperature EMATs are mainly shear-wave EMATs, and there are few reports on shear-longitudinal wave or longitudinal-wave EMATs due to the low intensity of the horizontal magnetic field. However, a desirable EMAT design characteristic is the possibility of selecting to generate different acoustic wave modes for various engineering applications. In this paper, a high-temperature EMAT with a double-coil configuration on waveform generation in paramagnetic steel was studied. By adjusting the configuration relationship between the electromagnetic coil and the EMAT eddy-current coil, the selective generation of shear-wave, longitudinal-wave, and shear-longitudinal wave modes was realized. According to quantitative analysis of shear and longitudinal waves generated by the double-coil EMAT, the amplitude ratio of shear and longitudinal waves was about 1 when the diameter of the EMAT eddy-current coil was equal to the inner diameter of the electromagnetic coil. Furthermore, shear-wave mode and shear-longitudinal wave mode high-temperature EMATs were designed and fabricated. The EMAT was placed in a high-temperature environment to continuously measure the paramagnetic steel SUS304. The amplitudes of the shear wave and longitudinal wave at 500 °C decreased by 10.2 times and 3.8 times, respectively, compared with that at 25 °C. The designed EMAT can selectively generate and receive different bulk acoustic wave modes at high temperatures.

Measuring bulk and surface acoustic modes in diamond by angle-resolved Brillouin spectroscopy

The acoustic modes of diamond are not only of profound significance for studying its thermal conductivity, mechanical properties, and optical properties, but also play a definite role in the performance of high-frequency and high-power acoustic wave devices. Here, we report on the bulk acoustic waves (BAWs) and surface acoustic waves (SAWs) of single-crystal diamond using angle-resolved Brillouin light scattering (BLS) spectroscopy. We identify two high-speed surface skimming bulk waves (SSBW) with acoustic velocities of 1.277×106 and 1.727×106 cm/s, respectively. Furthermore, we obtain the relationship between the velocity of arbitrary BAWs and that of BAWs propagating along the high-symmetric axis at different incident angles. In the community of diamond-based acoustic studies, our results may provide a valuable reference for fundamental research and device engineering.

Optically detected flip-flops between different spin ensembles in diamond

We employ the technique of optical detection of magnetic resonance to study dipolar interaction in diamond between nitrogen-vacancy color centers of different crystallographic orientations and substitutional nitrogen defects. We demonstrate optical measurements of resonant spin flips-flips (second Larmor line), and flip-flops between different spin ensembles in diamond. In addition, the strain coupling between the nitrogen-vacancy color centers and bulk acoustic modes is studied using optical detection. Our findings may help optimizing cross polarization protocols, which, in turn, may allow improving the sensitivity of diamond-based detectors.

Uncooled Infrared Detector Based on an Aluminum Nitride Piezoelectric Fishnet Metasurface

This article reports on the first demonstration of a high resolution (~1.9 nW/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> measured in 200 Hz bandwidth) and fast (~5.3 ms) uncooled Infrared (IR) detector based on a high frequency (172 MHz) aluminum nitride nano-plate piezoelectric fishnet-like metasurface (PFM). For the first time, an ultrathin (650 nm) piezoelectric fishnet-like metasurface is employed to form the vibrating body of a nanoelectromechanical resonator with a unique combination of optical, thermal and electromechanical properties. Sensing and actuation of a high frequency and high electromechanical performance (quality factor, Q ~2254 and electromechanical coupling coefficient, k <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ~1.4%) bulk acoustic mode of vibration in the free-standing ultrathin structure is achieved thanks to the superior piezoelectric transduction properties of the proposed metasurface. Strong absorption (60%) of mid wavelength infrared (MWIR) radiation in the ultra-low volume resonant device is obtained thanks to the properly engineered optical properties of the fishnet-like metasurface which provide multiple plasmonic resonances at 3-5 μm to the structure. The demonstrated resonant PFM detector technology marks a milestone towards the implementation of a new class of high performance, miniaturized and low power MWIR imaging systems.

High Q Lateral-Field-Excited Bulk Resonator Based on Single-Crystal LiTaO₃ for 5G Wireless Communication

The paper presents the design and fabrication of lateral-field-excited (LFE) resonators based on 42° Y-cut single-crystal LiTaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (LT) on silicon dioxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). A simple coplanar top electrode is defined to excite the bulk acoustic wave modes in the suspended LT/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> structure, and the fabrication process that only involves two lithography steps is more simplified compared to that of commercial film bulk acoustic wave resonators. For a model structure consisting of LT(670 nm)/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (1500 nm) thin film, two types of acoustic modes are both piezoelectrically active in the LT film: the first one is the thickness-shear mode with a resonance frequency of 2.46 GHz, an electromechanical coupling ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k_{eff}^{2}$ </tex-math></inline-formula> ) of 1.4%, a high quality factor ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}$ </tex-math></inline-formula> ) of 1690, and the second one corresponds to longitudinal mode with a resonance frequency of 4.39 GHz, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k} _{eff}^{2}$ </tex-math></inline-formula> of 1.2%, a high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${Q}$ </tex-math></inline-formula> of 1590, which is among the highest reported for piezoelectric MEMS resonators operating at this frequency range. The excellent performance would enable application scenarios including high-resolution sensors, low-phase-noise oscillators, and low-loss, high selectivity filters in the sub-6 GHz range for the fifth-generation (5G) wireless communication.

Acoustoelectric drag current in vanadium oxide films

Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO3 substrates. Coupling of acoustic waves propagating in LiNbO3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal–insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO2.

Excitation of high-frequency in-plane bulk acoustic resonance modes in geometrically engineered hafnium zirconium oxide nano-electro-mechanical membrane

A nano-electro-mechanical membrane created from atomic-layered ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2), titanium nitride (TiN), and silicon dioxide is engineered to localize high quality factor (Q) in-plane bulk acoustic resonance modes over 80–840 MHz. The in-plane geometry of the membrane, with an overall thickness of 50 nm and an aspect ratio exceeding 104:1, is optimized to simultaneously preserve the stress profile needed for sustaining ferroelectric polarization and enable propagation and constructive interaction of extensional and shear waves to create bulk acoustic modes. A ferroelectric polarization of 11.2 μC/cm2 is measured at the transduction ports, which is consistent after nano-membrane release. The first, third, and seventh order width extensional modes (WE1,3,7) and the third order of the width shear mode (WS3) are electrically measured at 109, 389, 766, and 267 MHz, respectively, showing Qs over 50–100 that are dominated by the large electrical resistance of TiN electrodes. High mechanical Qs of 538, 407, 781, and 594 are extracted for the WE1,3,7 and WS3 modes, respectively, after de-embedding the TiN electrode impedance, resulting in large resonance frequency (f0) × Q products as high as 6 × 1011. The measured characteristics, along with numerical simulations, are used to extract a Young's modulus of ∼340 GPa for the 10 nm-thick Hf0.5Zr0.5O2 film, which is in close agreement with the reported ab initio estimations.

Engineering Efficient Acoustic Power Transfer in HBARs and Other Composite Resonators

We present analytic and experimental evidence highlighting the importance of acoustic impedance matching for efficient power transfer in RF-MEMS composite resonators such as high-overtone bulk acoustic mode resonators (HBARs) and thin-film piezoelectric on substrate (TPoS) resonators. We show that materials used for the piezoelectric film and the bottom metal electrode in a composite resonator can be chosen or tailored for specific low-loss substrates, resulting in efficient acoustic power transmission across the interfaces of the acoustic source (piezoelectric transducer), intermediate layers including the bottom electrode, and into the acoustic cavity (substrate). We find that a composite resonator with good interfacial acoustic matching exhibits characteristic free spectral range (FSR) variations that are not well modeled in the literature, clearly differentiating it from resonators with poor acoustic matching. We verify this model by comparing the FSR spectra of the first experimentally demonstrated epitaxially grown Sc0.18Al0.82N/AlN/TaN/SiC HBARs (with a mismatched TaN bottom electrode) with epitaxial GaN/AlN/NbN/SiC HBARs where all constituent layers are acoustically matched to the substrate. Historically, the choice and quality of materials used for composite resonators has been limited by process constraints, but advances in epitaxial growth and heterogeneous integration techniques allow us to integrate multiple high quality, acoustically matched layers to form multi-functional composite resonators. [2020-0247]