Buffer Layer Research Articles

Restoring the electronic properties of epitaxial graphene on SiC substrate by Ar intercalation

Thermal decomposition of 6H-SiC(0001) under an argon atmosphere is a promising technique to fabricate large-scale epitaxial graphene monolayers for electronic applications. In this manuscript, we report on the intercalation of argon, hydrogen and oxygen atoms underneath a graphene buffer layer (BL) on SiC(0001), involving bond formation between the intercalated agent and Si atoms. Density Functional Theory calculations were performed to investigate the atomic structure, stability and electronic properties of quasi free-standing monolayer graphene and bilayer graphene, accomplished by intercalation. According to our results, as the Ar intercalated atoms saturate the silicon dangling bonds in the upper SiC surface, the BL is completely detached from the substrate and transformed into free-standing graphene. Ar intercalation would be hindered by the concurrent and thermodynamically more spontaneous adsorption of Ar atop the graphene layers, resulting in a pronounced decrease of the process efficiency. High Ar-coverage regimes and low kinetic barriers for Ar intercalation might shift the intercalation/adsorption balance. These factors as well as strategies such as ion implantation could be explored to identify more favorable conditions to experimentally test Ar intercalation as a simple method to achieve control of the electronic properties of the BL and help preserve the unique characteristics of graphene.

Thermal conductivity of MX80 powders-granules mixture and its prediction for high-level radioactive waste repository

Bentonite granules and their mixtures with powders are considered to be a preferred sealing material for filling gaps between buffer layer and surrounding rock in high-level radioactive waste (HLW) repository. Due to continuous release of decay heat from nuclides, thermal conductivity of bentonite granules must be assessed. In this study, the effects of water content, dry density, temperature on the thermal conductivity in the directions parallel (λpar) and perpendicular (λperp) to the bedding plane of MX80 powders-granules mixture (PGM) were investigated by thermal probe technique. Test results showed that the thermal conductivity of powdered bentonite (PB) was higher than that of PGM and λpar was higher than λperp. With increasing water content, the difference rate (δPSD) in thermal conductivity between PB and PGM increased, and anisotropy coefficient α (a ratio of λpar to λperp) decreased, while the effects of dry density and temperature on δPSD and α were not obvious. The factor importance was analyzed, and results showed that the effects of water content, dry density, temperature, and particle size distribution decreased successively. A modified geometric mean (MGM) model for predicting thermal conductivity of PGM with temperature is proposed and it predicted thermal conductivity of MX80 PGM well.

Enhancing the properties of Cd-free MgZnS buffer for solar cells by co-sputtering ZnS and Mg targets

The buffer is an essential component that connects the window and absorber layers in thin film solar cells, which has significant impacts on the performance of cell device. CdS is widely used buffer material, but it has drawbacks of toxicity and narrow band gap of 2.4eV. This work explores the fabrication of a novel Cd-free MgZnS buffer layer through co-sputtering ZnS and Mg targets. The grain size, morphology, phase composition, transmittance and band gap of MgZnS films are manipulated by adjusting the substrate temperature, sputtering power of ZnS target and sputtering current of Mg target. The MgZnS film exhibits remarkable characteristics, including high crystallinity with grain size of about 35nm, high transmittance of over 80%, and high band gap of 3.44eV. The process parameters with favorable outcomes include substrate temperature of 300 °C, ZnS sputtering power of 100W, and Mg sputtering current of 0.05A. Furthermore, compared with the CdS buffer, the MgZnS buffer has better compactness and transmittance. This method provides a promising new and effective avenue to fabricate Cd-free buffers for solar cells.

Controlling silver deposition morphology on aluminum surfaces: Surfactant modify anisotropy of aluminum surface energy

Faced with the challenge of uncontrollable Ag layer deposition morphology during the preparation of silver-coated aluminum particles (Al/Ag). A simple and nontoxic method involving the introduction of surfactants (PEG, PVP, and gelatin (GEL)) to alter the anisotropy of Al surface energy was proposed to achieve control over Ag deposition morphology. Theoretical calculations indicate that PEG undergoes physisorption to Al, while PVP and GEL can alter the surface energy of specific crystal planes by selectively binding to different crystal facets. This action alters the growth habit of Ag on the Al surface and modulates the Ag deposition behavior, these conclusions align with experimental results. Compared with PEG and PVP, the incorporation of GEL was beneficial for the formation of a conformal Ag layer. This can be attributed to GEL preferentially passivating the highest crystal plane Al (110) surface, forming a buffer layer at the solid-liquid interface, leveling out the Ag deposition rate on various crystal planes, and also effectively inhibiting side reactions, in addition to enhancing the wettability of reaction solution. The Al/Ag particle exhibits excellent electrical conductivity (1.03 × 10−6 Ω·cm) and electromagnetic absorption (−32.5 dB, 1.62 GHz), it is suitable for use as a highly conductive electromagnetic shielding material.

Enhancing CdSe/ZnS Quantum-Dot Light-Emitting Diode Performance: The Impact of Thermal Treatment Atmospheres on Fabrication Processes

We explored the thermal treatment impact on the performance of quantum-dot light-emitting diodes (QLEDs). The QLEDs comprised multiple layers: a 2.2-μm thick epoxy buffer layer; a bottom cathode composed of 12-nm MoOx/10-nm Ag/12-nm MoOx; a 20-nm ZnO electron transporting layer (ETL); a 10-nm CdSe/ZnS quantum dot light emission layer (EML); a 40-nm 4,4′,4″-Tris(carbazol-9-yl) triphenylamine hole transporting layer; a 10-nm WOx hole injection layer; and a 100-nm Ag top anode. We applied thermal treatments to the cathode, ETL, and EML separately to assess their effects on the QLEDs. Additionally, we evaluated the impact of the thermal treatment atmosphere. Vacuum thermal treatment on the cathode and EML resulted in minor improvements in QLED performance, whereas treatment of the ETL led to a decline in performance. In contrast, air thermal treatment on the cathode and EML decreased QLED performance but significantly improved it by 15% in current efficiency when applied to the ETL. The performance differences attributable to the thermal treatment atmosphere are likely due to ligand removal and oxidation processes, facilitated by thermal energy and oxygen. Our study highlights that air thermal treatment on the ETL substantially improves QLED performance, offering crucial insights into the significance of thermal treatment in QLED development.

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

AbstractUltra‐wide bandgap semiconductor AlGaN is a promising candidate for high‐power and high‐frequency electronics. AlGaN‐heterostructures with nitrogen (N)‐polarity can offer added benefits of low‐leakage and large drive current. However, electro‐thermal transport in such heterostructures remains unexplored, although they are essential for electronic device functionality. Here, the thermal and electrical properties of N‐polar AlxGa1‐xN‐channel heterostructures (Al percentage, x = 15–90%) are explored and compared with their GaN counterpart. The thermal measurements uncover that the effective thermal resistance of the thin channel and barrier layers are similar in magnitudes for N‐polar‐ AlGaN and GaN heterostructures, however, the total effective thermal conductivity in N‐polar AlGaN heterostructure is ≈4× smaller. This reduction originates from the larger thermal resistance of the thick Al0.15Ga0.85N buffer layer within the AlGaN stack. N‐polar AlxGa1‐xN stack displays a thermal conductivity almost independent of temperature, measured from room temperature up to 200 °C. Hall measurements of an N‐polar Al0.30Ga0.70N‐channel heterostructure further reveal that electrical properties such as resistivity, carrier density, and mobility remain nearly unchanged with temperature, indicating the dominance of alloy‐phonon scattering in such material systems. These results offer important insights into material‐device co‐design and reliability of N‐polar AlGaN heterostructures.

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo.

Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to enhance the perpendicular magnetic anisotropy (PMA), thermal tolerance, and tunneling magnetoresistance. However, Mo is often considered as a less favorable candidate among SOT materials because of its weak spin-orbit coupling. In this study, we experimentally investigate the SOT efficiencies in Mo/CoFeB/MgO heterostructures over a wide range of Mo thicknesses and temperature. Decent damping-like SOT efficiency |ξDL| = 0.015 ± 0.001 and field-like SOT efficiency |ξFL| = 0.050 ± 0.001 are found in amorphous Mo. The ξFL/ξDL ratio is greater than 3. Furthermore, efficient current-induced magnetization switching is demonstrated with the critical current density comparable with heavy metal Ir and W. Our work reveals new understanding and possibilities for Mo as both an SOT source component and PMA buffer layer in the implementation of SOT-MRAMs.

Enhanced luminescence using the core‐shell‐shell structure of 3‐mercaptopropionic acid‐capped ZnSe/ZnS: Mn/ZnS quantum dot

AbstractIn this study, we used the surface stabilizer 3‐mercaptopropionic acid (MPA) to synthesize ZnSe quantum dots in nontoxic aqueous solvents. Because of the –COOH group, MPA is an SH‐R‐COOH molecule that is added to improve the dispersion and quantum dot (QD) compatibility with antibodies. The different structures ZnSe, Mn‐doped ZnSe, Mn‐doped ZnSe/ZnS, and ZnSe/Mn‐doped ZnS/ZnS were investigated to find the optimum photoluminescence (PL). The structure and distribution element of ZnSe/Mn‐doped ZnS/ZnS QD were analyzed by the high‐resolution TEM image and scanning transmission electron microscopy. This finding of the ZnS buffer layer helps to reduce the defect lattice of QDs, which increases PL significantly. The highest PL intensity of ZnSe/ZnS:Mn/ZnS is significantly more than that of ZnSe and ZnSe/ZnS 6.2 and 3.3 times, respectively. In addition, the fluorescence efficiency of ZnSe/ZnS:5%Mn/ZnS‐MPA was 74.37% higher than that of ZnSe:5%Mn/ZnS‐MPA (55.04%) in ZnS buffer.

Performance analysis of ultra-thin CIGS solar cells with ZnS/CdS/ZnSe buffer layers

Performance analysis of ultra-thin CIGS solar cells with ZnS/CdS/ZnSe buffer layers

Enhancing Linearity of Light Response in Avalanche Photodiodes by Suppressing Electrode Size Effect

The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors.

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers.

Catalytic Pyrolysis of Polypropylene for Cable Semiconductive Buffer Layers.

With the progress of the power grid system, the coverage area of cables is widening, and the problem of cable faults is gradually coming to affect people's daily lives. While the vast majority of cable faults are caused by the ablation of the cable buffer layer, polypropylene (PP), as a common cable buffer material, has pyrolysis properties that critically impact cable faults. Studying the semiconductive buffer layer of polypropylene (PP) and its pyrolysis properties allows us to obtain a clearer picture of the pyrolysis products formed during PP ablation. This understanding aids in the accurate diagnosis of cable faults and the identification of ablation events. In this study, the effects of temperature and catalyst (H-Zeolite Standard Oil Corporation Of New York (Socony) Mobil-Five (HZSM-5)) content on the PP thermolysis product distribution were studied by using an online tubular pyrolysis furnace-mass spectrometry (MS) experimental platform. The results showed that PP/40% HZSM-5 presented the highest thermolytic efficiency and relative yield of the main products at 400 °C.

An Acceptor–Donor–Acceptor Molecule Tailored Versatile Buffer Enabling Efficient and Stable Perovskite Solar Cells

AbstractInterface in perovskite solar cells (PSCs) is of vital importance because it dominates deep‐level defects and non‐radiative recombination, thus impacting both efficiency and stability further. Herein, a symmetrical acceptor–donor–acceptor (A–D–A) conjugated molecule with the core architecture of terthieno[3,2‐b hiophene and 2‐(3‐oxo‐2,3‐dihydro‐1 H‐inden‐1‐ylidene)malononitrile, named 6TIC, as a versatile buffer layer, is adopted to enhance photovoltaic performance and stability simultaneously. It is found that the conjugated molecule filling at grain boundaries and surface can not only chemically anchor with perovskite components to substantially eliminate interfacial defects and suppress detestable non‐radiative recombination, but also effectively improve the energy level alignment and facilitate charge transfer efficiency at the interface, resulting in an excellent power conversion efficiency of 24.81% with an admirable fill factor of 84.5%. Furthermore, benefiting from the unexceptionable surface protection effect of the hydrophobic buffer layer, greatly improved operational stability is delivered, with retaining 90% of initial efficiency for 960 h aging in a relative humidity of 60 ± 5% air and 1450 h aging under continuous 85 °C heating stress. This strategy may provide a new avenue for advancing high‐efficiency and stable PSCs.

Effective Promotion of Micro Damping of GO Hybrid PU–PF Copolymer Grinding Wheels on Precision Machining

The influence of damping and friction performance of grinding wheels on precision grinding was explored for the first time. GO hybrid PU-modified PF copolymers were prepared by in situ synthesis and adopted as a matrix for fabricating grinding wheels. FT-IR, DSC, TG, and mechanical property tests showed the optimal modification when PU content was 10 wt% and GO addition was 0.1 wt%. Damping properties were investigated by DMA, and tribological characteristics were measured by sliding friction and wear experiments. The worn surfaces and fracture morphologies of GO hybrid PU–PF copolymers were observed by SEM. Distribution of components on the worn surfaces was explored by Raman mapping and EDS. The research results revealed that the PU component tended to be dispersed around the edges of corundum abrasives acting as a buffer layer of abrasive particles, which could provide micro-damping characteristics for abrasives, making the grinding force more stable during precision machining and facilitating a smoother surface quality of the workpiece.

Heterojunction interface engineering of C60 electron transport layer insertion enables efficient Cd-free Sb2Se3 solar cells

Antimony selenide (Sb2Se3) emerges as a promising semiconductor for solar energy conversion, attributed to its high light absorption and excellent photoelectric properties, coupled with notable stability and consistent stoichiometry. Yet, its application in thin-film solar cells is limited by non-radiative recombination losses at suboptimal heterojunction interfaces. Addressing this, we propose a strategy employing a C60 electron transport layer (ETL), thermally evaporated between the Sb2Se3 absorber and SnOx buffer layer. This approach not only increases the carrier density in SnOx but also passivates harmful defects like VO and OH−, thus reducing interfacial recombination. Incorporating C60 ETL improves the fill factor (FF) and open-circuit voltage (VOC) of the Sb2Se3 device, achieving a maximum power conversion efficiency (PCE) of 6.65 %. This finding highlights the significance of ETL-dependent interfacial engineering in enhancing Sb2Se3 solar cell performance, offering a novel and accessible solution to the primary challenge in developing Cd-free Sb2Se3 solar cells.

Prospects of buffer layer optimization for electrodeposited CZTS-based thin-film solar cell using SCAPS-1D

Kesterite Cu2ZnSnS4 (CZTS) has recently attracted the intensive attention of researchers as a significant photovoltaic material for the scalable production of thin film solar cells. We have particularly focused on replacing the conventional CdS buffer layer with non-toxic and earth-abundant materials of zinc stannate (Zn2SnO[Formula: see text] in environmentally friendly thin-film solar cells based on CZTS. Zinc stannate (ZTO) with a wide bandgap energy of about 3.33[Formula: see text]eV can be a promising material to reduce photon absorption loss and improve the photovoltaic performance of the device. Thus, the absorber and buffer layers were practically prepared to determine the bandgaps of layers for citation in SCAPS-1D simulation program. We employed chemical methods to deposit the CdS and CZTS layers and succeeded to obtain a high-quality kesterite phase of CZTS. The common configuration of FTO/CZTS/buffer/ZnO/AZO was the basis of the simulations in which, the thicknesses of the absorber and buffer layers were optimized by using the SCAPS-1D. According to the outcome of the simulations, the ZTO buffer layer has a better performance than CdS.

Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate

AbstractThis study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV are employed to manipulate charge transport in monolayer molybdenum disulfide (MoS2). In situ electrical characterization occurs without vacuum breakage post‐irradiation. Raman and photoluminescence spectroscopy quantify ion irradiation's impact on MoS2. Small doses of helium ion irradiation enhance monolayer MoS2 conductivity in field‐effect transistor geometry by inducing doping and substrate charging. Findings reveal a strong correlation between the electrical properties of MoS2 and the primary ion used, as well as the substrate on which the irradiation occurred. Using hexagonal boron nitride (h‐BN) as a buffer layer between MoS2 flake and SiO2 substrate yields distinct alterations in electrical behavior subsequent to ion irradiation compared to the MoS2 layer directly interfacing with SiO2. Molecular dynamics simulations and density functional theory provide insight into experimental results, emphasizing substrate influence on measured electrical properties post‐ion irradiation.

Solution‐Processed Sb2(S,Se)3 Seed‐Assisted Sb2Se3 Thin Film Growth for High Efficiency Solar Cell

Antimony selenide (Sb2Se3) emerges as a promising sunlight absorber in thin film photovoltaic applications due to its excellent light absorption properties and carrier transport behavior, attributed to the quasi‐one‐dimensional Sb4Se6‐nanoribbon crystal structure. Overcoming the challenge of aligning Sb2Se3‐nanoribbons normal to substrates for efficient photogenerated carrier extraction, a solution‐processed nanocrystalline Sb2(S,Se)3‐seeds are employed on the CdS buffer layer. These seeds facilitate superstrated Sb2Se3 thin film solar cell growth through a close‐space sublimation approach. The Sb2(S,Se)3‐seeds guided the Sb2Se3 absorber growth along a [002]‐preferred crystal orientation, ensuring a smoother interface with the CdS window layer. Remarkably, Sb2(S,Se)3‐seeds improve carrier transport, reduce series resistance, and increase charge recombination resistance, resulting in an enhanced power conversion efficiency of 7.52%. This cost‐effective solution‐processed seeds planting approach holds promise for advancing chalcogenide‐based thin film solar cells in large‐scale manufacturing.

Impact of B4C buffer layer on interface diffusion in Cr/Sc multilayers: combined study by x-ray reflectivity, scattering and fluorescence

In thin film multilayer based optical componentsof x-ray imaging system, diffusion of one material into the other degrades the reflectivity of the mirrors severely. Along with this thermodynamically driven diffusion, there are also growth generated interface roughness of different special frequencies and microstructures which can increase the diffused scattering from the multilayer and reduce the resolution of an image. Generally grazing incidence x-ray reflectivity in specular geometry (specular GIXR) and diffused x-ray scattering measurement in rocking scan geometry yield information regarding microstructure and overall diffusion at the interfaces of a multilayer. In this paper it is shown that grazing incidence x-ray fluorescence (GIXRF) measurement in standing wave condition alongwith the above measurements can give precise information regarding element-specific diffusion at the interfaces of a multilayer structure. Periodic multilayers made of 75 Cr/Sc bilayers with bilayer thickness ∼4 nm with and without B4C barrier layer of 0.2 nm thickness at the interfaces have been prepared using ion beam sputtering system and characterized by GIXR, diffused x-ray scattering and GIXRF measurements using synchrotron x-ray radiation just above the Cr K-edge. From the above measurements, drastic reduction in interface diffusion of Cr and improvement of interface morphology after addition of B4C barrier layer at the interfaces of Cr/Sc multilayers have been observed which is also corroborated by cross-sectional transmission electron microscopy of the multilayers. Finally, in the water window soft x-ray region of 2.3–4.4 nm performance of these multilayers have been tested and the Cr/B4C/Sc multilayer with improved interface quality has been found to yield ∼30.8% reflectivity at 3.11 nm wavelength which is comparable with the best reported reflectivities in the literature at this wavelength.

Understanding of multi-way heat extraction using peripheral diamond in AlGaN/GaN HEMT by electrothermal simulations

Abstract High power operation of high electron mobility transistors (HEMTs) is limited due to a variety of thermal resistances in the HEMT device causing self-heating effects (SHEs) in the device. To reduce the SHEs, diamond heat spreaders integrated to the device have proven efficient for heat extraction from the device. In this report using electro-thermal TCAD simulations, we demonstrate an understanding of multiway heat extraction utilizing diamond heat spreaders for improving HEMT thermal performance at high DC output power density
(~40 W/mm). The impact of each heat extraction pathway is understood while considering the thermal boundary resistance between Diamond/GaN hetero-interface and optimization of the GaN buffer layer thickness. Using these findings, we simulated an AlGaN/GaN HEMT device operating at 40 W/mm DC output power while maintaining device temperature at approximately 470 - 500 K.