Bottom-gate Organic Field-effect Transistors Research Articles

Optimization of Gas-Sensing Properties in Poly(triarylamine) Field-Effect Transistors by Device and Interface Engineering.

In this study, we investigated the gas-sensing mechanism in bottom-gate organic field-effect transistors (OFETs) using poly(triarylamine) (PTAA). A comparison of different device architectures revealed that the top-contact structure exhibited superior gas-sensing performance in terms of field-effect mobility and sensitivity. The thickness of the active layer played a critical role in enhancing these parameters in the top-contact structure. Moreover, the distance and pathway for charge carriers to reach the active channel were found to significantly influence the gas response. Additionally, the surface treatment of the SiO2 dielectric with hydrophobic self-assembled mono-layers led to further improvement in the performance of the OFETs and gas sensors by effectively passivating the silanol groups. Under optimal conditions, our PTAA-based gas sensors achieved an exceptionally high response (>200%/ppm) towards NO2. These findings highlight the importance of device and interface engineering for optimizing gas-sensing properties in amorphous polymer semiconductors, offering valuable insights for the design of advanced gas sensors.

Direct Comparison of the Effect of Processing Conditions in Electrolyte-Gated and Bottom-Gated TIPS-Pentacene Transistors

Among the plethora of soluble and easy processable organic semiconductors, 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-P5) is one of the most promising materials for next-generation flexible electronics. However, based on the information reported in the literature, it is difficult to exploit in field-effect transistors the high-performance characteristics of this material. This article correlates the HMDS functionalization of the silicon substrate with the electrical characteristics of TIPS-P5-based bottom gate organic field-effect transistors (OFETs) and electrolyte-gated organic field-effect transistors (EGOFETs) fabricated over the same platform. TIPS-P5 transistors with a double-gate architecture were fabricated by simple drop-casting on Si/SiO2 substrates, and the substrates were either functionalized with hexamethyldisilazane (HMDS) or left untreated. The same devices were characterized both as standard bottom-gate transistors and as (top-gate) electrolyte-gated transistors, and the results with and without HMDS treatment were compared. It is shown that the functionalization of the silicon substrate negatively influences EGOFETs performance, while it is beneficial for bottom-gate OFETs. Different device architectures (e.g., bottom-gate vs. top-gate) require specific evaluation of the fabrication protocols starting from the effect of the HMDS functionalization to maximize the electrical characteristics of TIPS-P5-based devices.

Perfectness of the main-chain alignment in the conjugated polymer films prepared by the floating film transfer method

Polymer semiconductor/gate dielectric interface is well known to influence the charge transport behaviors in organic field-effect transistors (OFETs). In the unidirectional floating-film transfer method (UFTM), thin floating films of uniaxially aligned π-conjugated polymers are solidified at the air/liquid interface before transferring them onto device substrates. Therefore, packing structures in the films prepared by UFTM are not affected by the strong interactions with the device substrate as usually seen in other film growth methods. Here, one question arises: will the difference in interactions between the liquid substrate and air impact the orientational structure of the polymer chain near the two surfaces or not? To answer this question, we have studied the charge-transport anisotropy in top- and bottom-gate OFETs by changing the film thickness. As a result, the field-effect carrier mobility and its anisotropy did not significantly differ for both surfaces and were constant against the film thickness. These results indicate that the UFTM can provide unidirectional alignment of polymer chains throughout the film thickness and gives a similar superior performance either for a bottom- or a top-gate OFET.

Two-step direct heteroarylation reaction towards 2,5-bis(alkoxy)benzene polymer for organic field-effect transistors processed with tetrahydrofuran

A 2,5-bis(alkoxy)benzene polymer POB-TNT has been newly designed and synthesized via very convenient two-step direct heteroarylation reaction. Its physicochemical properties have been investigated. POB-TNT demonstrates typical [Formula: see text]-type carrier transport characteristic in unencapsulated bottom-gate and top-contact organic field-effect transistors (OFETs) processed with relatively green tetrahydrofuran solvent. The results highlight a readily accessible and low-cost-oriented polymer semiconductor for non-halogenated solvent-processed OFET application.

Effects of Thicknesses of Two Different Gate Insulators on the Performance of Pentacene Based Organic Field Effect Transistor

In this paper, a simulation of the electrical performance for Pentacene-based top-contact bottom-gate (TCBG) Organic Field-Effect Transistors (OFET) model with Polymethyl methacrylate (PMMA) and silicon nitride (Si3N4) as gate dielectrics was studied. The effects of gate dielectrics thickness on the device performance were investigated. The thickness of the two gate dielectric materials was in the range of 100-200nm to maintain a large current density and stable performance. MATLAB simulation demonstrated for model simulation results in terms of output and transfer characteristics for drain current and the transconductance. The layer thickness of 200nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.

Geometry Control of Source/Drain Electrodes in Organic Field-Effect Transistors by Electrohydrodynamic Inkjet Printing.

In this work we study the influence of dielectric surface and process parameters on the geometry and electrical properties of silver electrodes obtained by electrohydrodynamic inkjet printing. The cross-section and thickness of printed silver tracks are optimized to achieve a high conductivity. Silver overprints with cross-section larger than 4 μm2 and thickness larger than 90 nm exhibit the lowest resistivity. To fabricate electrodes in the desired geometry, a sufficient volume of ink is distributed on the surface by applying appropriate voltage amplitude. Single and multilayer overprints are incorporated as bottom contacts in bottom gate organic field-effect transistors (OFETs) with a semiconducting polymer as active layer. The multilayer electrodes result in significantly higher electrical parameters than single layer contacts, confirming the importance of a careful design of the printed tracks for reliable device performance. The results provide important design guidelines for precise fabrication of electrodes in electronic devices by electrohydrodynamic inkjet printing.

Thin film field effect transistors: Charge transport study in zinc quinolate complexes

Charge transport properties of zinc quinolate complexes namely, bis(8-hydroxyquinolinato)Zinc(II) and bis(2-methyl-8-hydroxyquinolinato)Zinc(II) have been studied by fabricating field effect transistors. The zinc metal complexes possess high thermal stability and also having good film forming property and hence can be easily processable. Solution processed cross-linked poly(4-vinylphenol) (CL-PVP) polymeric gate insulator has been employed in the fabrication of top-contact bottom-gate organic field-effect transistors (OFET) with thermally evaporated zinc complexes as channel layer material. The electron mobility of bis(8-hydroxyquinolinato)Zinc(II) and bis(2-methyl-8-hydroxyquinolinato)Zinc(II) have been found to be 1.12 × 10−3 and 1.93 × 10−3 cm2V−1sec−1, respectively with good on to off current ration of the order of 102. The results demonstrate the utility of zinc quinolate complexes as potential n-channel materials for organic electronic device applications.

Channel length-dependent characterisations of organic thin-film transistors with solution processable gadolinium phthalocyanine derivatives

Spin-coated 52-nm-thick films of newly synthesised gadolinium liquid crystalline bisphthalocyanine sandwich (GdPc2) complexes with octyl chains non-peripheral positions have been successfully employed as active layers for bottom-gate organic field effect transistors having both short (5,upmu {text{m}}) and long ( 20,upmu {text{m}}) channels. The scaling down of the channel length ( L ) decreases the field effect mobility due to the increase in the contact resistance between the gold electrodes and the GdPc2 semiconducting layer. Values of on–off ratio and sub-threshold voltage swing are higher nearly one order of magnitude for L = 5 ,upmu{text{ m}} than those for L = 20;upmu m.

Influence of solvent additives on the morphology and electrical properties of diF-TES ADT organic field-effect transistors

Abstract Solution processing of organic semiconductors offers key advantages, including low-cost and compatibility with large-area flexible substrates. Controlling film crystallization from solution, however, is not trivial. This is particularly important since the device properties are highly dependent on the film microstructure, which, in turn, can vary significantly with processing. In this work, we tuned the small molecule organic semiconductor film microstructure by using a binary solvent consisting of a host solvent and a high-boiling point solvent additive and studied the effect of additive content on charge transport. Spin coated 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene films processed from a mixture of chlorobenzene and dichlorobenzene, in various ratios, were investigated by using Polarized Optical Microscopy, Scanning Electron Microscopy and Atomic Force Microscopy analysis and their electrical properties were evaluated from bottom-contact bottom-gate organic field-effect transistors. We found that the mobility increased by three times for a 8% dichlorobenzene content as a result of reducing the density of the grain boundaries within the device channel.

A Facile Photo-cross-linking Method for Polymer Gate Dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided. The photo-cross-linker, BBP-4, was added into host polymers by simple solution blending process, which was capable of abstracting hydrogen atoms from polymers containing active C―H groups upon exposure to ultraviolet (UV) radiation. The cross-linking can be completed with a relatively long wavelength UV light (365 nm). The approach has been applied to methacrylate and styrenic polymers such as commercial poly(methylmethacrylate) (PMMA), poly(iso-butylmethacrylate) (PiBMA) and poly(4-methylstyrene) (PMS). The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films. The bottom-gate organic field-effect transistors (OFETs) through all solution processes on plastic substrate were fabricated. The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.

Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes

Bottom-gate organic field-effect transistors (OFETs) based on a soluble precursor of dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) with bottom-contact source-drain electrodes chemically modified with pentafluorobenzenethiol (PFBT) have been fabricated. The preparation of DNTT films using CYTOP overcoat layers allows the solution processing of bottom-gate/bottom-contact DNTT FETs with good electrical contacts between the PFBT-treated Au electrodes and the DNTT molecules. The DNTT FETs processed using CYTOP overcoat layers exhibit the field-effect mobilities of up to 0.37 cm2 V−1 s−1. High maximum mobility of 0.29 cm2 V−1 s−1 has been achieved in solution-processed DNTT FETs with channel length of 5 μm.

Influence of relative humidity on the electrical response of PEDOT:PSS based organic field-effect transistor

Abstract We have investigated the influence of relative humidity on the electrical response of a bottom gate organic field-effect transistor (OFET) with poly(3,4-ethylenedioxythiophene)/poly(4-styrene sulfonate) (PEDOT:PSS) as an active channel material. For sensor fabrication, the organic polymer PEDOT:PSS has been spun-cast on highly doped n-Si wafer with preliminary thermally deposited gold, source and drain electrodes. The structural characterization and surface morphology study of active layer has been performed by XRD and FESEM, respectively. From the transfer characteristic curve, the p-type hole conductivity in PEDOT:PSS thin film is confirmed. Whereas from the output current-voltage (I–V) characteristic of the OFET, the Ion/Ioff ratio has been measured to be ∼2.6, when operated at relative humidity (RH) ∼60%. The humidity sensing characteristics of the OFET have further been investigated by exposing the proposed OFET to varied RH levels (40–80% RH) at room temperature (26.2 °C). Within the humidity range examined, the channel current has been observed to amplify by nearly 29.4 times of its magnitude.

Radical polymers improve the metal-semiconductor interface in organic field-effect transistors

Modifying the organic-metal interface in organic field-effect transistors (OFETs) is a critical means by which to improve device performance; however, to date, all of the interfacial modifying layers utilized in these systems have been closed-shell in nature. Here, we introduce open-shell oxidation-reduction-active (redox-active) macromolecules, namely radical polymers, in order to serve as interfacial modifiers in pentacene-based OFETs. Through careful selection of the chemistry of the specific radical polymer, poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA), the charge transport energy level of the interfacial modifying layer was tuned to provide facile charge injection and extraction between the pentacene active layer and the gold source and drain electrodes of the OFET. The inclusion of this radical polymer interlayer, which was deposited in through straightforward inkjet printing, led to bottom-contact, bottom-gate OFETs with significantly increased mobility and ON/OFF current ratios relative to OFETs without the PTMA interlayer. The underlying mechanism for this improvement in device performance is explained in terms of the charge transport capability at the organic-metal interface and with respect to the pentacene grain growth on the radical polymer. Thus, this effort presents a new, open-shell-based class of materials for interfacial modifying materials, and describes the underlying physics behind the practical operation of these materials.

Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors.

Poor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection efficiency and obtained high-performance devices with low cost and widely used source/drain (S/D) electrodes (Ag/Cu). Through the simple electrode etching process, the work function of the electrodes is more aligned with the semiconductors, which reduces the energy barrier and facilitates the charge injection. Besides, the formation of the thinned electrode edge with desirable micro/nanostructures not only leads to the enlarged contact side area beneficial for the carrier injection but also is in favor of the molecular self-organization for continuous crystal growth at the contact/active channel interface, which is better for the charge injection and transport. These effects give rise to the great reduction of contact resistance and the amazing improvement of the low-cost bottom-contact configuration OFETs performance.

High operational stability of solution-processed organic field-effect transistors with top-gate configuration

Electrical characteristics of top-gate field-effect transistors based on a wide range of solution-processed organic semiconductors are systematically investigated. The top-gate field-effect transistors based on different organic semiconductors—from an amorphous polymer semiconductor to a polycrystalline molecular semiconductor—exhibit higher operational stability compared with bottom-gate organic field-effect transistors reported in literature, in spite of significant difference in field-effect mobility. The correlation between charge transport and operational stability is discussed to gain insight into high operational stability of top-gate organic field-effect transistors.

Contact-resistance effects in PDI8-CN2 n-type thin-film transistors investigated by Kelvin-probe potentiometry

In this paper, the metal-semiconductor contacts in n-type bottom-contact bottom-gate Organic Field-Effect Transistors (OFET), based on evaporated films of a perylene diimide derivative (PDI8-CN2), have been investigated by Scanning Kelvin Probe Microscopy (SKPM). OFET were characterized for different thicknesses of the PDI8-CN2 film and in the light of the gold electrode functionalization with an aromatic thiol self-assembled monolayer. SKPM experiments reveal that aromatic thiol functionalization produces a 30% reduction in the contact resistance (Rc), while lowering the organic film thickness, the contact resistance (Rc) phenomenon tends to be magnified. The experimental observation that the voltage drops occurring close the drain electrode are even larger than those taking place at the source contact suggests that it is not possible, for these devices, to explain the overall Rc effects by simply referring to the presence of a reverse-biased Schottky junction limiting the electron injection process into the active channel.

Utilization of simply alkylated diketopyrrolopyrrole derivative as a p-channel semiconductor for organic devices

Simply alkylated diketopyrrolopyrrole (DPP-C12) (−C12=−C12H25) core has been synthesized and the opto/electrochemical properties are reported. The DPP-C12 can be utilized as a p-channel material in organic devices such as field-effect transistors, resistance load and complementary-type inverters. Both inorganic (OTS-treated SiO2) and polymeric gate insulators were employed in the fabrication of top-contact bottom-gate organic field-effect transistors with DPP-C12 thin-film. Devices are fabricated at different substrate temperatures and the material performance in device was structurally analyzed using atomic force microscope (AFM) and X-ray diffraction (XRD). The DPP-C12 thin-film OFET devices fabricated at Ts=90°C with the polymer gate insulator showed the best performance and the static and dynamic stability was evaluated as a function of time. In addition, the resistance load- and complementary-type inverters using the DPP-C12 thin-film OFET were constructed, and the static and dynamic electrical responses are analyzed in detail.

High performance of low band gap polymer-based ambipolar transistor using single-layer graphene electrodes.

Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-based ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated with the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.

Surface Analytical Characterization of P3HT-Streptavidin Bilayers for Biosensing Applications

ABSTRACTUltrasensitive biosensors based on bottom gate organic field-effect transistors can be developed by depositing a functional biological (protein) interlayer directly on the silicon oxide gate dielectric and underneath the organic semiconductor film. However, the deposition methods for assembling the protein biological recognition layer can affect the biosensor analytical performances for the target analyte detection. Here, spin-coating and layer-by-layer techniques were considered as different approaches for streptavidin protein deposition. X-ray photoelectron spectroscopy (XPS) was systematically used in the non-destructive parallel angle resolved mode to characterize the multilayer device at each step of its assembly to gain information on elemental depth profiles. Scanning electron and scanning Helium ion microscopies gave information about stacked layer structure and morphology corroborating XPS results.

Geometrical structure and interface dependence of bias stress induced threshold voltage shift in C60-based OFETs.

The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (Vth) shift was found to depend critically on the OFET device structure: the direction of Vth shift in top-gate OFETs was opposite to that in bottom-gate OFETs, while the use of the dual-gate OFET structure resulted in just very small variations in Vth. The opposite direction of Vth shift is attributed to the different nature of interfaces between C60 semiconductor and Parylene dielectric in these devices. The Vth shift to more positive voltages upon bias stress in bottom-gate C60-OFET was similar to that observed for other n-type semiconductors and rationalized by electron trapping in the dielectric or at the gate dielectric/C60 interface. The opposite direction of Vth shift in top-gate C60-OFETs is attributed to free radical species created in the course of Parylene deposition on the surface of C60 during device fabrication, which produce plenty of hole traps. It was also realized that the dual-gate OFETs gives stable characteristics, which are immune to bias stress effects.