The redistribution of dopant impurities in an oxidizing ambient is considered using a new series method. The results obtained are valid for a wide class of oxide growth functions including as special cases the parabolic and linear laws. More importantly, the method copes readily with the practically useful mixed linear-parabolic growth law. The solution retains the flexibility of the related Chen and Chen series and is applicable for a wide range of initial dopant profiles and for different boundary conditions at the oxide-semiconductor interface. As an example of the power of this new technique results are presented for the previously analytically unsolved problem of redistribution from an initial erfc profile, with a segregation type boundary condition, assuming a linear-parabolic growth law. The convergence difficulties of our general series solution have been surmounted by the use of the Euler transformation, providing solutions which are valid for realistic diffusion times. Our analysis permits a comparison with the earlier work of Guckel and Hall on the redistribution from a step profile.
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