Domain Walls In Bilayer Graphene Research Articles

Effects of domain walls in bilayer graphene in an external magnetic field

We investigate bilayer graphene systems with layer switching domain walls separating the two energetically equivalent Bernal stackings in the presence of an external magnetic field. To this end we calculate quantum transport and local densities of three microscopic models for a single domain wall: a hard wall, a defect due to shear, and a defect due to tension. The quantum transport calculations are performed with a recursive Green's function method. Technically, we discuss an explicit algorithm for the separation of a system into subsystems for the recursion and we present an optimization of the well known iteration scheme for lead self-energies for sparse chain couplings. We find strong physical differences for the three different types of domain walls in the integer quantum Hall regime. For a domain wall due to shearing of the upper graphene layer there is a plateau formation in the magnetoconductance for sufficiently wide defect regions. For wide domain walls due to tension in the upper graphene layer there is only an approximate plateau formation with fluctuations of the order of the elementary conuctance quantum $\sigma_0$. A direct transition between stacking regions like for the hard wall domain wall shows no plateau formation and is therefore not a good model for either of the previously mentioned extended domain walls.

Valley-polarized domain wall magnons in 2D ferromagnetic bilayers

Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to layer stacking domain walls in FBL. The coexistence of DMI and ED is found to enrich the topology in FBL, yet the corresponding domain wall magnons do not carry a well-defined valley index. On the other hand, we show that layer stacking domain walls in DMI-free FBL constitute 1D channels for ballistic transport of topological valley-polarized magnons. Our theoretical results raise hope towards magnon valleytronic devices based on atomically thin topological magnetic materials.

Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall.

Layer-stacking domain wall in bilayer graphene is one type of topological defects that can greatly affect the electronic properties of bilayer graphene and therefore lead to nontrivial transport behaviors. An outstanding question on the layer stacking domain wall is how the electrons hop between two adjacent stacking domains. Here we report the first experimental observation of electronic transport across bilayer graphene domain walls by combining near-field infrared nanoscopy and scanning voltage microscopy techniques. We observe markedly different electron transport behaviors across the tensile- and shear-type domain walls. The tensile-type domain wall is highly reflective of low-energy incident electrons, but becomes more transparent when the electron density and the Fermi energy are increased by electrostatic gating. In contrast, the shear-type domain wall is always highly transparent at different gate voltages. Such soliton-dependent electronic transport can open up new routes to engineer novel nanoelectronic devices based on layer-stacking domain walls in bilayer graphene.

Nanoscale strain engineering of giant pseudo-magnetic fields, valley polarization, and topological channels in graphene.

The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of anomalous quantum Hall effect in monolayer graphene, demonstration of topological zero modes in "molecular graphene" assembled by scanning tunneling microscopy, and detection of topological valley transport either in graphene superlattices or at bilayer graphene domain walls. However, all aforementioned experiments involved nonscalable approaches of either mechanically exfoliated flakes or atom-by-atom constructions. Here, we report an approach to manipulating the topological states in monolayer graphene via nanoscale strain engineering at room temperature. By placing strain-free monolayer graphene on architected nanostructures to induce global inversion symmetry breaking, we demonstrate the development of giant pseudo-magnetic fields (up to ~800 T), valley polarization, and periodic one-dimensional topological channels for protected propagation of chiral modes in strained graphene, thus paving a pathway toward scalable graphene-based valleytronics.

Commensurate-incommensurate phase transition and a network of domain walls in bilayer graphene with a biaxially stretched layer

The two-chain Frenkel-Kontorova model is applied for an analytical description of the energy and structure of the network of domain walls in bilayer graphene. Using this approach, the commensurate-incommensurate phase transition upon biaxial stretching of one of the graphene layers is considered. We demonstrate that formation of the equilateral triangular network of domain walls becomes energetically favorable above the critical relative biaxial elongation of the bottom layer of $3.0\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}3}$. It is shown that the optimal period of the triangular network of domain walls is inversely proportional to the difference between the biaxial elongation of the bottom layer and the critical elongation as long as it is much greater than the width of domain walls. Quantitative estimates of the contribution of a single dislocation node to the system energy and the period of the network of domain walls are obtained. Experimental measurements of the period could help to verify the energy of the fully incommensurate state (such as that obtained by relative rotation of the layers) with respect to the commensurate one.

Quantum transport across van der Waals domain walls in bilayer graphene

Bilayer graphene can exhibit deformations such that the two graphene sheets are locally detached from each other resulting in a structure consisting of domains with different van der Waals inter-layer coupling. Here we investigate how the presence of these domains affects the transport properties of bilayer graphene. We derive analytical expressions for the transmission probability, and the corresponding conductance, across walls separating different inter-layer coupling domains. We find that the transmission can exhibit a valley-dependent layer asymmetry and that the domain walls have a considerable effect on the chiral tunnelling properties of the charge carriers. We show that transport measurements allow one to obtain the strength with which the two layers are coupled. We perform numerical calculations for systems with two domain walls and find that the availability of multiple transport channels in bilayer graphene significantly modifies the conductance dependence on inter-layer potential asymmetry.

Soliton-dependent plasmon reflection at bilayer graphene domainwalls.

Layer-stacking domain walls in bilayer graphene are emerging as a fascinating one-dimensional system that features stacking solitons structurally and quantum valley Hall boundary states electronically. The interactions between electrons in the 2D graphene domains and the one-dimensional domain-wall solitons can lead to further new quantum phenomena. Domain-wall solitons of varied local structures exist along different crystallographic orientations, which can exhibit distinct electrical, mechanical and optical properties. Here we report soliton-dependent 2D graphene plasmon reflection at different 1D domain-wall solitons in bilayer graphene using near-field infrared nanoscopy. We observe various domain-wall structures in mechanically exfoliated graphene bilayers, including network-forming triangular lattices, individual straight or bent lines, and even closed circles. The near-field infrared contrast of domain-wall solitons arises from plasmon reflection at domain walls, and exhibits markedly different behaviours at the tensile- and shear-type domain-wall solitons. In addition, the plasmon reflection at domain walls exhibits a peculiar dependence on electrostatic gating. Our study demonstrates the unusual and tunable coupling between 2D graphene plasmons and domain-wallsolitons.

Critical behavior of four-terminal conductance of bilayer graphene domain walls

Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological, nevertheless have interesting physical properties, including valley-momentum locking. A junction where two domain walls intersect forms the analogue of a quantum point contact. We study theoretically the critical behavior of this junction near the pinch-off transition, which is controlled by two separate classes of non-trivial quantum critical points. For strong interactions, the junction can host phases of unique charge and valley conductances. For weaker interactions, the low-temperature charge conductance can undergo one of two possible quantum phase transitions, each characterized by a specific critical exponent and a collapse to a universal scaling function, which we compute.

Topological valley transport at bilayer graphene domain walls.

Electron valley, a degree of freedom that is analogous to spin, can lead to novel topological phases in bilayer graphene. A tunable bandgap can be induced in bilayer graphene by an external electric field, and such gapped bilayer graphene is predicted to be a topological insulating phase protected by no-valley mixing symmetry, featuring quantum valley Hall effects and chiral edge states. Observation of such chiral edge states, however, is challenging because inter-valley scattering is induced by atomic-scale defects at real bilayer graphene edges. Recent theoretical work has shown that domain walls between AB- and BA-stacked bilayer graphene can support protected chiral edge states of quantum valley Hall insulators. Here we report an experimental observation of ballistic (that is, with no scattering of electrons) conducting channels at bilayer graphene domain walls. We employ near-field infrared nanometre-scale microscopy (nanoscopy) to image in situ bilayer graphene layer-stacking domain walls on device substrates, and we fabricate dual-gated field effect transistors based on the domain walls. Unlike single-domain bilayer graphene, which shows gapped insulating behaviour under a vertical electrical field, bilayer graphene domain walls feature one-dimensional valley-polarized conducting channels with a ballistic length of about 400 nanometres at 4 kelvin. Such topologically protected one-dimensional chiral states at bilayer graphene domain walls open up opportunities for exploring unique topological phases and valley physics in graphene.

Superfluid-insulator transition of quantum Hall domain walls in bilayer graphene

We consider the zero-filled quantum-Hall ferromagnetic state of bilayer graphene subject to a kink-like perpendicular electric field, which generates domain walls in the electronic state and low-energy collective modes confined to move along them. In particular, it is shown that two pairs of collective helical modes are formed at opposite sides of the kink, each pair consisting of modes with identical helicities. We derive an effective field-theoretical model of these modes in terms of two weakly coupled anisotropic quantum spin-ladders, with parameters tunable through control of the electric and magnetic fields. This yields a rich phase diagram, where due to the helical nature of the modes, distinct phases possess very different charge conduction properties. Most notably, this system can potentially exhibit a transition from a superfluid to an insulating phase.

Valley Chern numbers and boundary modes in gapped bilayer graphene

Electronic states at domain walls in bilayer graphene are studied by analyzing their four- and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures, which occur in the bulk Hamiltonian parameter space. The important role played by intervalley coupling effects not directly captured by the continuum model is addressed using lattice calculations for specific domain wall structures.

Valley-kink in bilayer graphene atν=0: A charge density signature for quantum Hall ferromagnetism

We investigate interaction-induced valley domain walls in bilayer graphene in the $\ensuremath{\nu}=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a double-gated suspended sample, where the electric field changes sign across a line in the middle. The noninteracting energy spectrum of the ground state is characterized by a sharp domain wall between two valley-polarized regions. Using the Hartree-Fock approximation, we find that the Coulomb interaction opens a gap between the two lowest-lying states near the Fermi level, yielding a smooth domain wall with a kink configuration in the valley index. Our results suggest the possibility to visualize the domain wall via measuring the charge density difference between the two graphene layers, which we find exhibits a characteristic pattern. The width of the kink and the resulting pattern can be tuned by the interplay between the magnetic field and the gate electric fields.

Sizing up domain walls in bilayer graphene

Sizing up domain walls in bilayer graphene