Bias Voltage Research Articles

Simulation and investigation of optical artificial neuron by optical injection in semiconductor laser

Abstract This research investigates the experimental implementation of a feed-forward (FF) optical neural network using optical injection (OI). Two follower laser diodes (FLD1, FLD2) are subjected to chaotic modulation, with their respective signal weights adjusted via optical filtration. The study analyzes the behavior of these FLDs during FF operation, focusing on frequency spectra derived from time series data. The research examines the impact of both signal weights and control parameters, including the bias voltage of the influencer laser diodes (ILD1, ILD2), on the FLDs. A maximum FWHM of 1.7 GHz is observed for FLD2 when both the bias voltage is set to 4V, and the modulated signal is attenuated to -20 dB. To assess the synchronization state, the correlation between the ILDs and FLDs is calculated. Results show fluctuations between positive and negative values, with a maximum correlation of 0.42 observed for FLD1 when influenced by FLD2's voltage. These findings demonstrate an anti-synchronized relationship between the ILDs and FLDs, a crucial requirement for ensuring privacy in a chaotic optical communication system, simulating an optical neural network. (ILD1,ILD2) bias voltage in additional tow FLDs. Maximum FLD2 measured FWHM 1.7

High spatial resolution PET detectors based on 10 mm × 10 mm linearly-graded SiPMs and 0.5 mm pitch LYSO arrays.

Position-sensitive silicon photomultipliers (PS-SiPMs) are promising photodetectors for ultra-high spatial resolution small-animal positron emission tomography (PET) scanners. This paper evaluated the performance of the latest generation of linearly-graded SiPMs (LG-SiPMs), a type of PS-SiPM, for ultra-high spatial resolution PET applications using LYSO arrays from two vendors. 
Approach: Two dual-ended readout detectors were developed by coupling LG-SiPMs to both ends of the two LYSO arrays. Each LG-SiPM has an active area of 9.8 mm × 9.8 mm. Both LYSO arrays consist of 20 × 20 arrays of 0.44 mm × 0.44 mm × 20 mm polished LYSOs with a pitch of 0.5 mm. The performance of the two detectors was compared in terms of flood histogram, energy resolution, timing resolution, and depth-of-interaction (DOI) resolutions.
Main results: Flood histograms showed clear identification of all LYSO elements except for some edge crystals due to the larger size of the LYSO arrays compared to the active area of the LG-SiPMs and the misalignment between LG-SiPMs and LYSO arrays in the assembled detectors. At a bias voltage of 37.0 V, the detectors utilizing the Tianle LYSO array and EBO LYSO array provided energy resolutions of 17.5 ± 2.2 % and 18.6 ± 2.0 %, timing resolutions of 0.75 ± 0.03 ns and 0.78 ± 0.03 ns, and DOI resolutions of 2.16 ± 0.15 mm and 2.31 ± 0.12 mm, respectively. 
Significance: The results presented in this paper demonstrate that the new generation LG-SiPMs are promising photodetectors for ultra-high spatial resolution small-animal PET scanner applications.

Electrically tunable graphene terahertz isolator assisted by nonreciprocal plasmon

Abstract Nonreciprocal isolators enable unidirectional light propagation without back reflection. Typical terahertz isolators require magnetic fields to break the time reversal symmetry. Here, we propose a nonmagnetic isolator in the terahertz range based on nonreciprocal graphene plasmon operated in reflection configuration. The bias voltage generates the drift current in graphene which breaks the time-reversal symmetry and induces the nonreciprocal reflection. The isolator device exhibits a high isolation beyond 20 dB with insertion loss less than 3 dB. Moreover, the bandwidth with isolation beyond 20 dB can be broadened by five times to 1.7 THz via tuning the carrier density. The indexes including isolation, insertion loss and bandwidth of the isolator show strong dependence on the drift velocity and mobility of graphene, as well as the air-gap thickness. Our work shows great potential in the burgeoning terahertz technology where nonmagnetic and electrically tunable isolators are still lacking.

Highly Efficient Lightweight Flexible Cu(In,Ga)Se2 Solar Cells with a Narrow Bandgap Fabricated on Polyimide Substrates: Impact of Ag Alloying, Cs and Na Doping, and Front Shallow Ga Grading on Cell Performance

Herein, lightweight, flexible Cu(In,Ga)Se2 (CIGS) solar cells with a narrow bandgap of ≈1 eV are grown on polyimide substrates. The poor performance of the CIGS solar cells owing to a low growth temperature (≈400 °C) is considerably improved via Ag alloying, Na doping using alkali‐silicate‐glass thin layers (ASTLs) and the CsF postdeposition treatment (CsF‐PDT), and front shallow Ga grading (surface field; SF). Along with improved device process, a notably high conversion efficiency of 21.2%, low VOC deficit of 0.346 V, and high JSC of ≈40 mA cm−2 are achieved. Ag alloying and Na doping using ASTLs predominantly improve the CIGS bulk quality, while the CsF‐PDT and SF reduce carrier recombination at the CIGS/CdS interface and vicinity. Device simulations reveal that the SF increases the electrical field at the CIGS surface under the forward bias voltage close to VOC owing to electron injection from the CdS side, which increases the chemical potential. Thus, the SF effectively repulses holes and improves the interfacial property. Device simulations also reveal that a high CIGS absorber's quality is prerequisite to benefit from the SF. Thus, CIGS solar cells showing improved bulk quality due to optimum alkali doping and Ag alloying considerably benefit from the SF.

Investigations on the Performance of a 5 mm CdTe Timepix3 Detector for Compton Imaging Applications

Nuclear power plant decommissioning requires the rapid and accurate classification of radioactive waste in narrow spaces and under time constraints. Photon-counting detector technology offers an effective solution for the quick classification and detection of radioactive hotspots in a decommissioning environment. This paper characterizes a 5 mm CdTe Timepix3 detector and evaluates its feasibility as a single-layer Compton camera. The sensor’s electron mobility–lifetime product and resistivity are studied across bias voltages ranging from −100 V to −3000 V, obtaining values of μeτe = (1.2 ± 0.1) × 10−3 cm2V−1, and two linear regions with resistivities of ρI=(5.8±0.2) GΩ cm and ρII=(4.1±0.1) GΩ cm. Additionally, two calibration methodologies are assessed to determine the most suitable for Compton applications, achieving an energy resolution of 16.3 keV for the 137Cs photopeak. The electron’s drift time in the sensor is estimated to be (122.3 ± 7.4) ns using cosmic muons. Finally, a Compton reconstruction of two simultaneous point-like sources is performed, demonstrating the detector’s capability to accurately locate radiation hotspots with a ∼51 cm resolution.

Efficient Gate-Tunable Hot-Carrier Photocurrent from Perovskite Multiple Quantum Wells.

Hot-carrier relaxation above the bandgap results in significant energy losses, making the extraction of hot carriers a critical challenge for efficient hot-carrier photocurrent generation in devices. In this study, we observe long-lived hot carriers in the metal-halide perovskite multiple quantum wells, (BA)2(MA)n-1PbnI3n+1 (n = 3), and demonstrate effective hot-hole photocurrent generation using 2DMoS₂ as an extraction layer. A high external quantum efficiency of short-circuit hot-carrier photocurrent of up to 35.4% is achieved. Further enhancement in photocurrent efficiency and open-circuit photovoltage is achieved when a gate electric field is applied, resulting in an external quantum efficiency of up to 61.9%. Evidence of hot-hole extraction is validated through operando transient reflection measurements on the working devices, with studies that depend on wavelength, carrier density, and gate voltage. DFT calculations on the heterostructure devices under different bias voltages further elucidate the mechanism of hot-hole extraction enhancement. These findings underscore the potential of perovskite multiple quantum wells as long-lived hot-carrier generators and highlight the role of 2D transition metal dichalcogenide semiconductors as efficient hot-carrier extraction electrodes for low-power optoelectronics.

The Model and Simulation of Memristor

Memristor is an emerging electronic component, tremendous efforts have been made in the fields of memristor, motivated by its unique resistor switching feature, as well as the good compatibility with the current integrated circuit (IC) technologies. It has been widely accepted that memristor would be a powerful candidate for constructing the brain-like computing hardware system in the next generation of electronics. Even so, there are still challenges in the development of the memristor IC and the calculation system based on it. For an example, the lack of memristor simulation module hinders its automatic design. Herein, we would like to propose a method for simulating the feature of the memristor. Firstly, based on the conductive filament based physical principle of memristor, calculations are conducted to simulate the basic electronic features of memristor. The good fitness confirms the feasibility of the proposed method. Second, the memristor’s resistance switching feature is modelled by Spice, a popular design platform. With the use of Voltage-Controlled Current Source (VCCS) in Spice, a modulus of memristor is established and executed to simulate the switched resistances under different bias voltages. In summary, this work demonstrates the feasibility of the proposed simulating method, it may provide an easy-to-operate way to improve design efficiency of active memristor arrays

Gate-Tunable High-Responsivity Photodiode Based on 2D Ambipolar Semiconductor

Abstract Electrically tunable homojunctions based on ambipolar two-dimensional materials have attracted widespread attention in the field of intelligent vision. These devices exhibit inherent switchable positive and negative photovoltaic properties, that effectively mimic the behavior of human retinal cells. However, the photovoltaic responsivity of most electrically tunable homojunctions remain significantly low due to the weak light absorption, making it challenging to meet the application requirements for high-sensitivity target detection in the field of intelligent vision. Here, we propose a gate-tunable photodiode based on two-dimensional ambipolar WSe2 with an asymmetric gate electrode, achieving high photovoltaic responsivity. By adjusting the gate voltage and keeping bias voltage zero, we can dynamically realize reconfigurable n--p and n--n homojunction states, as well as gate-tunable photovoltaic response characteristics that range from positive to negative. The maximum photovoltaic responsivity of the electrically tunable WSe2 homojunction is approximately 0.4 A/W, which is significantly larger than the previously reported value ~0.1 A/W in homojunction devices. In addition, the responsivity can be further enhanced to approximately 1.0 A/W when the n--p photodiode operates in reverse bias mode, enabling high-sensitivity detection of targets. Our work paves the way for developing gate-tunable photodiodes with high photovoltaic responsivity and advancing high-performance intelligent vision technology.

Boosted Photoelectrochemical Water Oxidation Performance with a Quaternary Heterostructure: CoFe2O4/MWCNT-Doped MIL-100(Fe)/TiO2

Cobalt ferrite (CoFe2O4) combined with multi-walled carbon nanotubes (MWCNTs) is an outstanding material regarding photoelectrochemical water oxidation (PEC-WO) because of its excellent catalytic properties and stability. On the other hand, surface imperfections in CoFe2O4 can cause band bending and surface Fermi level pinning, significantly reducing its PEC conversion efficiency. Heterostructure engineering is essential for achieving increased light-gathering capacity and charge separation efficiency for PEC-WO. In this study, a quaternary heterostructure of CoFe2O4/MWCNT-doped Metal–Organic Framework-100 (Iron), MIL-100(Fe)/Titanium Oxide (TiO2) was synthesized by using a combination of hydrothermal, solvothermal, and “dip and dry” techniques. Characterization results confirmed the formation of a structural network of MIL-100(Fe) on TiO2 surfaces, enhanced by the incorporation of MWCNTs during the hydrothermal reaction. Under 1 sun irradiation, the resultant quaternary heterostructure displayed a photocurrent density (Jph) of 3.70 mA cm−2 under free bias voltage, which is around 3.08 times more than that of pristine TiO2 photoanodes (Jph = 1.20 mA cm−2). This investigation highlights the advantages of the MIL-100(Fe) network in improving the solar PEC-WO performance of TiO2 photoanodes.

Metal‐organic Framework‐derived NiO/ZnO Composites for Photoelectrocatalytic Reduction of Cr(VI)

AbstractNi/Zn‐MOF composites with photoelectrocatalytic (PEC) performance for Cr(VI) reduction were prepared via hydrothermal method and calcinating method. The as‐prepared NiO/ZnO composites exhibited uniform morphology. When being subjected to an external voltage of 0.7 V and irradiated with visible light for 120 min, the NiO/ZnO composite exhibited a Cr (VI) reduction efficiency of almost 100 %, outperforming ZnO and NiO counterparts. The effects of the content of NiO to ZnO and different calcination temperatures on PEC performance were also investigated. Additionally, elimination experiments results indicated that photo‐generated electrons (e−) play a crucial role in the catalytic reduction of Cr(VI). The notable enhancement in the photoelectrocatalytic performance can be credited to the applied bias voltage and the formation of a p‐n heterojunction between NiO and ZnO. Consequently, the NiO/ZnO nanocomposites exhibit significant potential for the PEC reduction of Cr(VI). This capability underscores the promise of NiO/ZnO nanocomposites for applications in the photoelectrocatalytic reduction of Cr(VI) and related environmental remediation processes.

Tuning Self-Polarization of Epitaxial BiFeO3 Thin Films through Interface Effects.

Interface effects and strain engineering have emerged as critical strategies for modulating polarization and internal electric fields in ferroelectric materials, playing a vital role in exploring coupling mechanisms and developing ferroelectric diode devices. In this study, we selected BiFeO3 as a representative ferroelectric material and utilized interface engineering to control its polarization. By precisely manipulating the atomic stacking sequence at the interface, we influenced the electrostatic potential step across the interface, resulting in a bias voltage in the ferroelectric hysteresis loops that defined the ferroelectric state. The introduction of strain and strain gradients through a lattice mismatch between the film and substrate generated a flexoelectric field of approximately 3 MV/m, significantly impacting the internal electric field. Additionally, we successfully modified the Schottky barrier height within BiFeO3 films through the synergy and competition between interfacial and flexoelectric effects. This work expands the potential applications of thin-film flexoelectricity in Schottky diodes, sensors, and memory devices.

Frequency Tunable Film Bulk Acoustic Resonator Integrating PMN‐PT/FSMA Multiferroic Heterostructure for Flexible MEMS

AbstractFrequency tunable flexible piezo resonators exhibit significant potential for technological advances in wearable magnetic field sensing, futuristic wireless telecommunication devices, and flexible micro‐electromechanical systems. This study presents a multifunctional and flexible 0.67Pb(Mg1/3Nb2/3)O3−0.33PbTiO3(PMN‐PT)/Ni50Mn35In15 (Ni‐Mn‐In) multiferroic heterostructure‐based bulk acoustic wave (BAW) resonator fabricated over Kapton substrate. The fundamental resonance frequency (fR = 5.31 GHz) of the resonator is tunable with magnetic and electric fields. A significant change in resonance frequency (ΔfR) of 405 MHz has been achieved with 3.37 Hz nT−1 sensitivity using a direct current (DC) magnetic field of 1200 Oe, attributed to the delta‐E effect. The resonator displays a significant magnetic field tunability of 8.83%. Additionally, a substantial ΔfR of 360 MHz, 36 Hz µV−1 sensitivity and 6.78% tunability is attained with 10 V of DC bias voltage. The impact of magnetic field and DC bias voltage on the acoustic characteristics have been studied by fitting the resonance frequency curves with an equivalent modified Butterworth‐Van Dyke model. The fabricated BAW resonator exhibits outstanding flexibility with no discernible change in fR up to 2000 bending cycles. Such PMN‐PT/Ni‐Mn‐In‐based multiferroic BAW resonators displaying magnetic and electric field tunability are propitious for next‐generation flexible electronics and magnetic field sensors.

Hybrid Terahertz Emitter for Pulse Shaping and Chirality Control

AbstractTerahertz (THz) radiation (0.3 to 30 THz) fills the crucial gap between the microwave and infrared spectral range. THz technology is important for applications ranging from imaging to telecommunication to biosensing, but these applications often require precise control and manipulation of the THz frequency and polarization state, which typically requires modulators external to the THz source. A hybrid THz emitter that overcomes this limitation by integrating two THz emitters into a single device to enable pulse shaping and chirality control of the emitted radiation without any external components is demonstrated. The two sources are a spintronic emitter (SE) and a semiconductor photoconductive antenna (PCA). The two emitters respond independently to external parameters: the PCA is controlled by the applied bias voltage, while the SE is controlled by the applied magnetic field. Moreover, a dual‐wavelength excitation scheme allows for control of the relative time delay between the THz emission from each constituent. These properties of the hybrid emitter enable precise control of the mixing of the two signals to control the frequency, polarization, and chirality of the overall THz radiation. This on‐chip hybrid emitter thus provides a powerful platform for engineered THz radiation with wide‐ranging potential applications.

Dynamically Tunable Terahertz Multiple Plasmon‐Induced Transparency and Slow Light in Planar Metamaterials With Rectangular Interrupted Graphene

ABSTRACTA novel planar monolayer graphene metamaterial structure containing rectangular interrupted graphene is proposed. Dynamically tunable multiple plasmon‐induced transparency (PIT) and slow light are obtained within the terahertz band through destructive interference between continuous dark and interrupted bright modes. Two distinct graphene types function as the optical dark and bright modes, and continuous graphene array is the nonradiative dark mode, whereas interrupted graphene array is the broad linewidth bright mode, respectively. Given the existence of graphene structure in the continuous state, continuous graphene Fermi level is dynamic tuned through the simple use of the bias voltage. Expressions of n‐order coupled mode theory (CMT) are correctly deduced, with CMT fitting theoretical analysis being identical to finite‐difference time‐domain numerical simulation based on dual‐ and triple‐PIT results for n = 3 and n = 4 cases, respectively. The continuous graphene Fermi level increases within 0.7–1.1 eV; the group index of the dual‐PIT system is maintained within 475.1–801.6, while that of the triple‐PIT system is 583.3–886.3. Additionally, the maximal group index is as high as 886.3 at 1.1 eV, indicating that an outstanding slow light device is established. Consequently, these proposed structures and research outcomes can guide the design of multichannel optical filters, excellent slow light devices, and dynamically tunable optical modulators.

Photocurrent Polarity-Switchable Imaging of Single Living Cells by Light-Addressable Electrochemical Sensor.

The light-addressable electrochemical sensor (LAES) is a powerful tool for single-cell imaging due to its label-free and probe-free advantages. In this work, we report a photocurrent polarity-switchable LAES using a single-phase photoelectrode of a BiFeO3 thin film for living cell imaging. The proposed BiFeO3 could show both p- and n-type photocurrent behavior by simply altering the external bias voltage. LAES imaging of the same individual MCF-7 cells was performed in anodic and cathodic modes. Decreases in both photocurrents were observed due to the hindering effect of the adherent cells on local photoinduced Faraday currents. Furthermore, the dynamic photocurrent changes on cells after trypsin treatment were imaged and studied at anode and cathode polarities. Both polarities showed an increase in local photocurrents on cells as the cell-substrate junction weakened, and this change displayed heterogeneous characteristics. This is the first time that LAES cell imaging was achieved in a p-type mode. Meanwhile, our photocurrent polarity-switchable imaging approach overcomes the limitations of conventional photoelectrodes, which have been confined to single-polarity operation. We believe this work has the potential to significantly broaden the application scope of LAES in single-cell visualization and analysis, offering great insights into cellular behavior and function.

Memristor‐Based Reconfigurable True Time Delay Circuit

ABSTRACTA memristor‐controlled CMOS reconfigurable true time delay circuit is introduced in this paper. The delay circuit includes three stages of ‐C all‐pass filter delay elements connected in cascade and memristor‐based tunable DC voltage sources. The memristor value variation changes the DC bias voltage inputs of the delay elements and thus controls the delay time indirectly: The memristor resistance changes in analogue from 10 to 17 k, changing the tunable DC voltage source output from 584‐ to 711‐mV DC voltage and the delay from 269 to 632 ps. The delay circuit can work in a frequency range from 50 MHz to 1.6 GHz with gain ripple smaller than 3 dB. The resolvable delay time step across the delay range is < 8.7 ps, troughing at as low as 0.4 ps. A delay circuit working in the MHz region is also designed to compare the performance with the GHz circuit, and a memristor‐programming circuit is built to change the resistance levels of memristors.

Susceptibility to Low-Frequency Breakdown in Full-Wave Models of Liquid Crystal-Coaxially-Filled Noise-Shielded Analog Phase Shifters

Building on the fully encapsulated architecture of liquid crystal (LC) coaxial phase shifters, which leverages noise-shielding advantages for millimeter-wave wideband reconfigurable applications, this study addresses the less-explored issue of low-frequency breakdown (LFB) susceptibility in modern full-wave solvers. Specifically, it identifies the vulnerability nexus between the tuning states (driven by low-frequency bias voltages) and the constitutive elements of LC-filled coaxial phase shifters—namely, the core line, housing grounding, and radially sandwiched tunable dielectrics—operating at millimeter-wave frequencies (60 GHz WiGig), microwave (1 GHz), and far lower frequency regimes (down to 1 MHz, 1 kHz, and 1 Hz) for long-wavelength or quasi-static conditions, with specialized applications in submarine communications and geophysical exploration. For completeness, the study also investigates the device state prior to LC injection, when the cavity is air-filled. Key computational metrics, such as effective permittivity and characteristic impedance, are analyzed. The results show that at 1 kHz, deviations in effective permittivity exceed four orders of magnitude compared to 1 GHz, while characteristic impedance exhibits deviations of three orders of magnitude. More critically, in the LFB regime, theoretical benchmarks from 1 MHz to 1 kHz and 1 Hz demonstrate an exponential increase in prediction error for both effective permittivity, rising from 16.8% to 1.5 × 104% and 1.5 × 107%, and for characteristic impedance, escalating from 8.1% to 1.15 × 103% and 3.9 × 104%, respectively. Consequently, the prediction error of the differential phase shift, minimal at 60 GHz (0.16%), becomes noticeable at 1 MHz (4.39%), increases sharply to 743.88% at 1 kHz, and escalates dramatically to 2.18 × 1010% at 1 Hz. The findings reveal a pronounced frequency asymmetry in LFB susceptibility for the LC coaxial phase shifter biased at extremely low frequencies.

Comparative Study on the Electrocatalytic Performance of ABO3-Based Hexagonal Perovskite Oxides with Different [AO3] Layers.

To systematically investigate the influence of the number of [AO3] layers in the unit cell of hexagonal perovskite oxide on the oxygen evolution reaction performance, we successfully synthesized the three new hexagonal perovskite oxides 2H-BaCo0.9Ru0.1O3-δ, 6H-BaCo0.9Ru0.1O3-δ, and 10H-BaCo0.9Ru0.1O3-δ with the same element composition but different [BaO3] layers via the sol-gel method. Here, 2H, 6H, and 10H refer to the number of [BaO3] layers contained in the unit cell of the BaCo0.9Ru0.1O3-δ system. Experimentally, 10H-BaCo0.9Ru0.1O3-δ, featuring ten layers of [BaO3], exhibits optimal electrochemical activity among the three oxide catalysts, and in situ Raman results under various bias voltages confirm its ability to maintain a high surface crystal structural stability. Notably, as the number of [BaO3] layers increases, the effective magnetic moments and the valence state of surface Co ions in these three catalysts also increase, with the spin configuration of the surface Co ions being in a high-spin state. More importantly, DFT calculations provide the evolution rules of the p-band center (εp) with the number of [BaO3] layers, predicting the electrochemical performance of the BaCo0.9Ru0.1O3-δ system with different [BaO3] layers. Our experimental results offer a distinctive perspective for the future design, synthesis, and application of hexagonal perovskite oxides in electrocatalysis.

Plasmon-Exciton Strong Coupling in Single-Molecule Junction Electroluminescence.

Single molecules bridging two metallic electrodes can emit light through electroluminescence when subjected to a bias voltage. Typically, light emission in such devices results from transitions between molecular states, although in the presence of light-matter coupling, the emission can result from a transition between hybrid light-matter states. Here, we create single metal-molecule-metal junctions and simultaneously collect conductance and electroluminescence data using a scanning tunneling microscope (STM) equipped with a custom spectrometer. Through experimental analysis and electronic structure calculations, we provide evidence for a molecule-electrode interfacial exciton coupled to a junction cavity plasmon. Importantly, we find that close to resonant transport conditions, the molecular junction functions as a single emitter that is strongly coupled to the junction cavity mode, leading to characteristic Rabi splitting of the emission spectrum and providing the first example of an electroluminescence-driven single-molecule system in the regime of strong light-matter coupling.

Enhancing room temperature thermoelectric efficiency in zigzag phosphorene nanoribbon junctions through Quasi-Flat impurity bands

Abstract In this study, a novel approach has been utilized to Please specify the corresponding author.explore the room temperature thermoelectric properties of zigzag phosphorene nanoribbon-based monolayer-bilayer-monolayer junctions. To achieve thermoelectric properties at room temperature, a quasi-flat energy band with limited width is required. It has been demonstrated, for the first time, that such bands can be observed by considering a junction of the monolayer and bilayer phosphorene nanoribbons. By adjusting the ribbon widths, quasi-flat bands are produced. This geometrical problem is solved using analytical calculations for a general system and applied to phosphorene. We show that the edge states of phosphorene resemble a one-dimensional tight-binding system, with a close agreement between their results. Using the introduced approach, we calculate the electronic energy band structure of the specified system. Initially, we demonstrate that the formation of zigzag monolayer-bilayer-monolayer junctions can lead to the emergence of quasi-flat impurity bands within the energy bandgap. Furthermore, we show that utilizing these structures at room temperature, across a wide range of lead temperature differences, results in significant output electrical power and improved thermoelectric efficiency. The electrical power and thermoelectric efficiency are examined as functions of applied bias voltage and average chemical potential. Additionally, we explore how the output electrical power, thermoelectric efficiency, and efficiency at maximum power vary with the temperature difference between the leads at the ends of the structure.