Bias Voltage Research Articles

Highly Sensitive Phased Array Probes based on Capacitive Micromachined Ultrasonic Transducers

Capacitive Micromachined Ultrasonic Transducers (CMUTs) offer a wide freedom of design for ultrasonic phased arrays. They are characterized, in comparison to piezoelectric transducers, by a higher sensitivity in receiving and a wider bandwidth based on their physical properties. Especially in combination with integrated preamplifiers the high receiving sensitivity compensates or rather overcompensates the lower transmission power of the CMUT in single probe applications with pulse-echo technique. This asymmetric behavior opens new opportunities in the application. In medical diagnostics it allows to meet the maximum permissible ultrasonic radiation force with the best sensitivity. In nondestructive testing the transmission power can be increased by the combination of a piezoelectric probe for transmitting and a CMUT probe for receiving. Especially in double probe techniques, such as pitch-catch or time-of-flight diffraction (TOFD), this is an efficient extension of the conventional approach with two piezoelectric transducers. The CMUT array probes developed by Fraunhofer IPMS with integrated preamplifier and bias voltage converter powered by a standard USB-A connector can be applied as one to one substitute for piezoelectric phased arrays with commercially available ultrasonic devices without adaption or additional electronics. The CMUT arrays are best suited for immersion technique and medical sonography because of their natural matching to water-like materials. They are applicable as well for solid surfaces with a special coating. We present the first results of ultrasonic imaging with our CMUT array probes in comparison with a commercially available piezoelectric phased array probe.

High thermoelectric performances of monolayer GeTe allotropes.

Aiming at finding wide-temperature-zone thermoelectric (TE) materials, five kinds of monolayer GeTe allotropes including the newly designedγ-,δ-, andɛ-GeTe monolayers and the usualα- andβ-GeTe ones are constructed. By using the density functional theory and the nonequilibrium Green's function method, all their electronic properties and TE transport properties are comparatively investigated. It is found that the room-temperature figure of meritZTof theγ-GeTe (ɛ-GeTe) along the armchair (zigzag) direction can amount to 4.5 (3.5), which is further increased to 7.15 (5.91) at 700 K. TheseZTvalues are much higher than the other IV-VI compounds usually withZT < 3, indicating that the armchairγ-GeTe and the zigzagɛ-GeTe we designed here can be used as superior wide-temperature-zone and high-performance TE materials in the temperature range from 300 K to 700 K. Moreover, with the increase of temperature, theZTpeaks will become wider in width and move towards the position of zero chemical potential, which will make the GeTe-based TE devices work at low bias voltages more efficiently. This work should be an important reference on the way to the stage ofZT⩾4, which will motivate more explorations into the high-performance TE materials working in a wider temperature scope.

Bioinspired Three-Mode Photosensitive Synaptic LED for Optical Information Processing.

Inspired by human sense organs, AI is advancing toward multimodal perception, with display technology evolving into intelligent human-computer interaction tools. However, hardware networks with multimodal responses connected by different devices bring problems such as delayed information transfer and inefficiency. Thus, an innovative three-mode photosensitive synaptic LED (PSSL) is first proposed by adding a photosensitive layer indacenodithiophene-benzothiadiazole (IDTBT) to the quantum-dot light-emitting diode (QLED), switched by changing the bias voltage. The self-powered PSSL has a photoresponse range from 310 nm to 808 nm (ultraviolet-near-infrared, UV-NIR). The device exhibits a bipolar response under red and UV light at 1 V. When the voltage reaches the turn-on voltage, the PSSL device turns into a neuromorphic LED, exhibiting conductivity enhancement under red-light irradiation and suppression under UV-light irradiation. As a result, the PSSLs are expected to be applied in the field of optical encryption communication and in neuromorphic display.

Self-Powered Infrared-Detectable BP/Ta2NiS5 Heterojunction and Its Application in Energy-Efficient Optoelectronic Synapses.

The development of energy-efficient and high-performance optoelectronic devices is crucial for the advancement of modern optoelectronic and microelectronic systems. Although the self-powered devices and optoelectronic synapses based on 2D heterojunction show great application prospects, the high energy consumption and infrared band detection of self-powered optoelectronic synapses are still an urgent problem to be solved. In this report, a BP/Ta2NiS5 heterojunction is constructed to achieve infrared detection by leveraging differences in Fermi energy levels. This heterojunction exhibits a high specific detectivity of 6.57×1010, 2.6×1010, and 1.12×1010 Jones and responsivity of 20, 10.6, and 5.9mAW-1 for 1064, 1550, and 2200nm infrared light at 0 bias voltage, respectively. In addition, under the 2200nm light, by applying an ultra-low bias voltage of 800µV, the heterojunction exhibits ultra-low power and energy consumption of 28.8pW and 0.64pJ, successfully simulates a variety of synaptic behaviors under infrared light, and demonstrates its image perception and image memory capabilities. These findings position the BP/Ta2NiS5 heterojunction as an ideal candidate for a multifunctional optoelectronic device crucial for advanced photodetection, neuromorphic computing, and artificial intelligence.

Mechanical and high-temperature steam oxidation properties of Cr coatings deposited via high-power impulse magnetron sputtering

Applying protective coatings to Zr alloy cladding surfaces is one of the better methods to design fuel tolerant materials. In this study, the surface of a Zr-4 alloy was coated with Cr using high-power impulse magnetron sputtering. Furthermore, the mechanisms by which bias voltages affect the mechanical characteristics, resistance to high-temperature steam oxidation, and coating structure were elucidated. The coating exhibits a strong (200) weave structure with coarse grains at a bias voltage of -100 V. With increasing bias, the energy of deposited particles increases, grains continue to grow, (200) preferential growth orientation disappears, and the coating exhibits a (110) crystal orientation. The growth structure of the coating first shows a tendency to be dense and then loose. For the Cr coating with a (200) crystal orientation, a dense oxide layer is preferentially formed after oxidation, which can effectively block the internal diffusion of O. With increasing oxidation time, coarse Cr grains can effectively block the external diffusion of Zr. Furthermore, the Cr coating exhibiting a (110) crystal orientation was severely oxidized after oxidation, resulting in the formation of cracks at the film base; this accelerated the outward diffusion of Zr.

Photocurrent in Silic in Silicon/Barium Titanate/Nikel Structures

Photosensitive silicon/barium titanate/nickel structures with undoped barium titanate and doped europium were synthesized using the sol-gel method. The current-voltage characteristics were studied under illumination with a xenon lamp, highlighting a monochromatic line in the range of 400–800 nm and in dark mode. The synthesized structures showed the presence of a photocurrent on the reverse branch of the current-voltage characteristics over the entire studied range of illumination wavelengths. The maximum reverse branch current for a structure with undoped barium titanate was achieved when exposed to radiation with a wavelength of 470 nm and was about 0.6 μA for a bias voltage ranging from 2 to 10 V. Doping barium titanate with europium leads to an increase in the photocurrent by 17–26 %.

Effect of bias voltage on high-temperature oxidation resistance and electrical properties of Mn-Co coating with metal interconnects for solid oxide fuel cell

Abstract This study investigated the effects of bias voltage on the microstructure, high-temperature oxidation resistance, electrical conductivity, element diffusion, and barrier of chromium poisoning cathode of Mn-Co coating on the surface of SOFCs metal interconnect SUS441 ferritic stainless steel. A series of Mn-Co coatings were prepared by magnetron sputtering technique at different bias voltages (−10, −50, −90 V) and oxidized at high temperatures for 175 h at 850 °C in an air environment. The results showed that the surface of each coating before oxidation exhibited a cauliflower-like morphology, with the crystallinity of the coating increasing with higher bias voltage. After high-temperature oxidation, especially the Mn-Co coatings prepared at −90 V bias, a dense and stable MnCo2O₄ spinel structure was formed, which is crucial in inhibiting the growth of the Cr2O3 oxide layer. In addition, the coating also exhibits excellent electrical conductivity (Ea=0.35eV), good high-temperature oxidation resistance (1.182 mg/cm2), and a stronger ability to prevent the diffusion of Cr elements.

Receiving Paths Improvement of Digital Phased Array Antennas Using Adaptive Dynamic Range

In contemporary radar technology, the observation and detection of objects with low radar cross-sections remains a significant challenge. A multi-functional radar model employing a digital phased array antenna system offers notable advantages over traditional radar in addressing this issue. Nonetheless, to fully capitalize on these benefits, improving the structure of the receiving path in digital transceiver modules is crucial. A method for improving the digital receiving path model by implementing a matched filter approach is introduced. Given that the return signals from objects are often lower than the internal noise, the analog part of the digital transceiver modules must ensure that its dynamic range aligns with the level of this noise and the weak signal. The output signal level of the analog part must correspond to the allowable input range of the analog-to-digital converter. Improvements in the receiving path to achieve a fully matched model can reduce errors in the phase parameters and amplitudes of the useful signal at the output. The simulation results presented in this paper demonstrate a reduction in amplitude error by approximately 1 dB and a phase error exceeding 1.5 degrees for the desired signal at the output of each receiving path. Consequently, these improvements are expected to enhance the overall quality and efficiency of the spatial and temporal accumulation processes in the digital phased array antenna system. Furthermore, to maintain the matched filter model, we also propose incorporating an adaptive “pseudo-expansion” of the linear gain range. This involves adding a feedback stage with an automatic and adaptive bias voltage adjustment for the intermediate-frequency preamplifier in the analog part of the receiving path. Simulations to qualitatively verify the validity of this proposal are conducted using data from practical operational radar system models.

I-V Characteristics of Polycrystalline CAZTSe Heterojunction Solar Cells at Different Ag Content and Annealing Temperatures

Since the polycrystalline (Cu1-xAgx)2ZnSnSe4 (CAZTSe) demonstrated good optical absorption performance in the visible region, the focus of the present study is to grow the polycrystalline (Cu1-xAgx)2ZnSnSe4 thin films deposited by thermal evaporation method on silicon substrates with 800 nm thickness and 0.53 nm/sec deposition rate as a function of Ag content (0.0,0.1,0.2) and annealing temperature at 373 K, 473 K. From I-V measurements of Al/n-CdS/p-CAZTSe/n-Si(111)/Al heterojunction solar cells under dark and illumination conditions, we observed that the forward bias current changes roughly exponentially with bias voltage and the ideality factor and saturation current dependence on both x content and different temperatures (Ta).

Tunable Ambipolar Transport in a 2D Kagome Semiconductor

AbstractThe interference of electronic wavefunctions within a Kagome lattice can result in a flat band structure, where low‐energy electrons exhibit highly correlated behavior, facilitating exploration of interactions among intriguing electronic states. However, the inherent high carrier density in most known Kagome materials often hampers the manipulation of these quantum phenomena through conventional means, such as gate voltage. In this work, a unique tunability in the electrical and optoelectronic properties of exfoliated Nb3I8, a 2D semiconductor featuring a “breathing” Kagome lattice is uncovered. Characterization via temperature‐dependent ARPES confirms its semiconducting nature with a flat band structure. Experimental results from bias and gate voltage dependent transport measurements on thin film Nb3I8 transistor devices demonstrate ambipolar conductance. Notably, these findings reveal a broadband photoresponse in the device, spanning from visible to near infrared wavelengths (532 −1100 nm), with the photocurrent showing gate‐dependent characteristics that mirror the dark current's ambipolar nature. This observation marks the first instance of ambipolar transport in a Kagome semiconductor, opening up exciting new avenues for electronic and optoelectronic device development.

Plasma Etch of IGZO Thin Film and IGZO/SiO2 Interface Diffusion in Inductively Coupled CH4/Ar Plasmas

ABSTRACTIn this work, the etching characteristics of InGaZnO4 (IGZO) thin films were systemically investigated in inductively coupled CH4/Ar plasmas with various gas ratios, bias voltages, and surface temperatures. The ion flux in the CH4/Ar plasmas was analyzed using bias power and voltage, whereas the relative densities of CH and H radicals were quantified through optical actinometry. The change in CH3 radical density was also estimated based on plasma kinetics analysis. The correlations between the plasma properties and IGZO etch rate were investigated. In CH4/Ar plasmas with CH4 ratios below 80%, the IGZO etch rate increases with a higher CH4 proportion, aligning with the ascending trend of CH3 radical density, which suggests that CH3 radical density acts as a limiting factor (radical‐limited regime). However, the IGZO etch rate decreases when the CH4 ratio exceeds 80%, corresponding to the reduction in ion flux, which indicates that ion flux becomes a limiting factor in this ion‐limited regime. The IGZO etch rate shows a linear relationship with bias voltage and follows the Arrhenius equation with varying surface temperature in plasmas without bias voltage. A spontaneous etch model was proposed based on these relationships. In this model, the IGZO etch rate depends on CH3 radical density and IGZO surface reactivity, where ion bombardment contributes more significantly to surface reactivity than high surface temperature. IGZO thin film was deposited on SiO2 during the fabrication of a 3D stacked ferroelectric field‐effect transistor (FeFET) memory device. The interaction between IGZO and SiO2 during CH4/Ar plasma processing was investigated using time‐of‐flight secondary ion mass spectrometry. The efficacy of removing IGZO atoms that had diffused into the SiO2 network was enhanced when subjected to plasma with a bias voltage, compared to the process without a bias voltage. However, exposure to CH4/Ar plasma resulted in a deeper diffusion of IGZO atoms into the SiO2 network, primarily attributed to ion bombardment rather than elevated surface temperature. A significant improvement in surface smoothness was achieved after IGZO and SiO2 etch by introducing BCl3 into the SiO2 etching chemistry.

A high-performance selenium nanoflake-based avalanche photodetector

Photodetectors are now indispensable in our daily lives, and there is a pressing need to explore new materials and mechanisms that can push the boundaries of device performance. Two-dimensional (2D) van der Waals (vdW) semiconductors have emerged recently as a promising material platform with exceptional optoelectronic properties, making them particularly suitable for high-performance photodetectors. However, photoinduced carrier generation in conventional 2D vdW photodetectors are usually limited, and new mechanisms need to be introduced to enhance device performance. Herein, we report a high-performance avalanche photodetector based on selenium (Se) nanoflakes. Our device achieves a high photoresponsivity (R) and specific detectivity (D*) of 361 A·W−1 and 2.4 × 1012 Jones, respectively. These figures of merit are two orders of magnitude higher than that in conventional Se photoconductive photodetectors. As a large bandgap vdW semiconductor, the Se channel allows the application of an extremely large bias voltage across it, and the resulting high electric field leads to the avalanche multiplication of carriers, which lays the groundwork for the improved device performance.

One-Step Magneton Sputtering of Crystalline Cu-Doped TiO2 Coatings: Characterization and Antibacterial Activity

Early biofilm formation could be inhibited by applying a thin biocompatible copper coating to reduce periprosthetic infections. In this study, we deposited crystalline Cu-doped TiO2 films using one-step DC magnetron sputtering in an oxygen atmosphere on a biased Ti6Al4V alloy without external heating. The bias voltage varied from −25 V to −100 V, and the resultant substrate temperature was measured. The deposited coatings were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), microhardness, scratch and hydrophilicity tests, potentiodynamic polarization measurements, and antibacterial assays against S. aureus and E. coli. The findings demonstrated that when a higher negative bias is applied, the substrate temperature drops, and the anatase to rutile transformation is initiated without indicating obvious Cu-containing phases. The SEM images of the films showed spherical agglomerates with homogeneously distributed Cu with decreasing Cu content as the bias value increased. Higher bias results in the grain refinement of the thinning coatings with more lattice microstrain and more defects, together with an increase in water contact angles and hardness values. Samples biased at −75 V exhibited the highest adhesive strength between coatings and substrate, whereas the specimen biased at −50 V demonstrated higher corrosion resistance. Cu-containing TiO2 coatings with pure anatase phase composition and Cu concentrations of 2.62 wt.% demonstrated excellent bactericidal activity against both S. aureus and E. coli. The layers containing 2.34 wt.% Cu exhibited very good antibacterial properties against S. aureus, only. According to these findings, the produced copper-doped TiO2 coatings have high bactericidal qualities in vitro and may be used to prepare orthopaedic and dental implants in the future.

Performance of 3D trench silicon pixel sensors irradiated up to [formula omitted]

Tracking particles at extreme fluences requires the accurate measurement of the charged particle timing at the pixel level in order to cope with the increased occupancy of HL-LHC experiments. Maintaining this precision throughout the operational life of the detector is crucial. This work demonstrates that the 55×55μm2 wide 150μm thick 3D trench-type pixels, developed by the TimeSPOT Collaboration, maintain the performance of non-irradiated sensors even after exposure to fluences as high as 1⋅10171MeVneqcm−2. The preliminary results of a beam test characterization using minimum ionizing particles at the SPS North area beam facility reveal that the charge collection and the time resolution of the irradiated sensors are comparable to those of non-irradiated ones, by increasing the operational bias voltage. A minor reduction in detection efficiency, approximately 4%, is observed post-irradiation. Currently, 3D trench-type pixels are among the fastest pixel detectors available for tracking charged particles and hold significant promise for future tracking system upgrades. This preliminary evaluation suggests their suitability for use in even harsher radiation environments than High Luminosity Large Hadron Collider (HL-LHC) such as future experiments at the Future Circular Hadron Collider (FCC-hh).

Multifunctional electrically switchable metalens

Here, we propose three all-solid-state, electrically switchable, transmissive, and multifunctional metalens arrays comprising tunable metal-oxide material BaTiO3 (BTO) nanopillars with different structural parameters. To produce the required phase profile for each metalens, the rectangular nanopillars, as the unit cell of the BTO structure, are developed to support arbitrary combinations of two independent phase shifts (0−2π) with bias voltage states of 0 V and 60 V, at first. Second, the structure parameters of different functional metalens arrays are generated efficiently and accurately based on the dual-phase modulation characteristics of a single structure. Finally, we use the finite-difference time-domain method to simulate the three kinds of switchable metalenses. The results show that the three metalenses can realize the function of adjustable focus position, switchable beam focusing and beam deflection, and switchable beam focusing and beam splitting.

Bias-controlled modulation for monolithic III-nitride optoelectronic integration

III-nitride multi-quantum well (MQW) diodes can modulate the light emitted by another diode with the same MQW structure by varying the bias voltage owing to the spectral overlap between the electroluminescence spectrum and spectral responsivity curve of the MQW diodes. Here, we investigate bias-controlled modulation by monolithically integrating an optical transmitter, waveguide, electro-absorption modulator (EAM), and slot grating coupler on a silicon-based III-nitride platform using compatible fabrication processes. The modulated light is coupled into a fiber, which is direct to a photodiode for characterization. The bandwidths of forward-biased emission modulation and reverse-biased absorption modulation are of the same order of magnitude, with the latter exhibiting significant performance improvements. In addition, real-time video signal transmission was achieved using an EAM, which provides a meaningful reference for modulation applications of silicon-based GaN optoelectronic integrated systems.

High performance Au/mix-phase MgZnO/Ga-doped ZnO/In heterojunction solar-blind UV detector with small work voltage

High performance UVC (220 nm–280 nm) detectors with low work voltage is key problem in wide application of UVC optoelectronic device. Here, Au/MgZnO/Ga-doped ZnO/In heterojunction detector is made with both high UVC sensitivity mix-phase MgZnO and high carrier density Ga-doped ZnO conductive layers. The heterostructure detector possess relative high response(0.36A/W)at 254 nm deep UV light without bias voltage. The avalanche breakdown phenomenon within the heterojunction detector, introduced high deep UV response (1390.3 A/W at 3.3 μW/cm2 230 nm) of the Au/MgZnO/Ga-doped ZnO/In heterojunction detector under 5 V bias voltage. The high response of Au/MgZnO/Ga-doped ZnO/In heterojunction detector under low work voltage, is not only much higher than MSM structure MgZnO detector under bias voltage over 25 V, but also higher than reported deep UV detector under small bias voltage. In addition, because of different internal breakdown mechanism, the peak response position of the Au/MgZnO/Ga-doped ZnO/In heterojunction detector is located at shorter wavelength position compared with MSM structure MgZnO detector. Therefore, Au/MgZnO/Ga-doped ZnO/In heterojunction detector is an ideal device structure in low voltage driven detector with relative high response at short wavelength UV light.

Influence of bias voltage and oxygen addition on the discharge aspects of a diffuse argon plume in an atmospheric pressure plasma jet

A remote plasma, also referred to as a plasma plume (diffuse or filamentary), is normally formed downstream of an atmospheric pressure plasma jet. In this study, a diffuse plume is formed by increasing the bias voltage (U b) applied to the downstream electrode of an argon plasma jet excited by a negatively pulsed voltage. The results indicate that the plume is filamentary when U b is low, which transits to the diffuse plume with increasing U b. The discharge initiated at the rising edge of the pulsed voltage is attributed to the diffuse plume, while that at the falling edge contributes to the filament in the plume. For the diffuse plume, the discharge intensity decreases with the increasing oxygen content (C o). Fast photography reveals that the diffuse plume results from a negative streamer, which has a dark region near the nozzle with C o = 0%. However, the dark region is absent with C o = 0.5%. From the optical emission spectrum, the electron density, electron excitation temperature, gas temperature, and oxygen atom concentration are investigated.

Microstructure, mechanical and oxygen-deficient lead-bismuth eutectic corrosion properties of FeCrAlTiMo high-entropy alloy coatings for fuel claddings

The FeCrAlTiMo high-entropy alloy (HEA) coatings were deposited on the ferritic/martensitic (F/M) steel fuel cladding tubes by magnetron sputtering technology to improve their lead-bismuth eutectic (LBE) corrosion resistance. The effects of bias voltage on the microstructure, mechanical and LBE corrosion properties of the FeCrAlTiMo coatings were systematically investigated. The LBE corrosion test shows that the coatings with a bias voltage of −150 V exhibit the best oxidation resistance after exposed to the oxygen-deficient LBE at 600 °C for 500 h, and can be used as a protective candidate coating material for lead-cooled fast reactor (LFR) application. The high-temperature LBE corrosion mechanism of the FeCrAlTiMo coatings under deficient oxygen concentration was also discussed in detail.

Photocatalytic seawater splitting by Earth-abundant catalysts: metal-semiconductor metamaterials made of plasmonic magnesium diboride and transitional metal dichalcogenides.

Metal-semiconductor metamaterials hold great promise for photocatalytic water splitting due to their excellent light harvesting in a broad spectral range as well as efficient charge carrier generation and transfer. In majority of such metamaterials, semiconductors are used to initiate the water splitting reaction, while their metal counterparts are employed to improve light harvesting through plasmonic effects. Here, we describe for the first time an exceptional reversed case of metal-semiconductor photocatalysts in which metals are used to initiate the water splitting reaction and semiconductors are employed to improve light harvesting through blackbody effect and serve as co-catalysts. The studied photoanodes are made of non-noble plasmonic MgB2 combined with transition metal dichalcogenides (TMDCs). The plasmonic resonances of the MgB2 component contribute to field confinement, plasmon-exciton coupling, and hot-electron transfer providing an enhancement of photoactivity in the entire solar spectrum capable of water splitting. The TMDC component provides impedance matching and enhances light absorption by the metal catalyst. We demonstrate seawater splitting with MgB2-TMDCs photoanodes attaining current densities of ~ 3 mA⋅cm-2 at solar radiation. The overall efficiency of hydrogen production in seawater splitting by sunlight with the help of the studied photoanodes is 3% at bias voltage of Vbias = 0.3 V.