Bias Voltage Research Articles

Thermoelectric cooling of a finite reservoir coupled to a quantum dot

We investigate nonequilibrium transport of charge and heat through an interacting quantum dot coupled to a finite electron reservoir. Both the quantum dot and the finite reservoir are coupled to conventional electric contacts, i.e., infinite electron reservoirs, between which a bias voltage can be applied. We develop a phenomenological description of the system, combining a rate equation for transport through the quantum dot with standard expressions for bulk transport between the finite and infinite reservoirs. The finite reservoir is assumed to be in a quasiequilibrium state with a time-dependent chemical potential and temperature which we solve for self-consistently. We show that the finite reservoir can have a large impact on the stationary state transport properties, including a shift and broadening of the Coulomb diamond edges. We also demonstrate that there is a region around the conductance lines where a heat current flows out of the finite reservoir. Our results reveal the dependence of the temperature that can be reached by this thermoelectric cooling on the system parameters, in particular the coupling between the finite and infinite reservoirs and additional heat currents induced by electron-phonon couplings, and can thus serve as a guide for experiments on quantum-dot-enabled thermoelectric cooling of finite electron reservoirs. Finally, we study the full dynamics of the system, with a particular focus on the timescales involved in the thermoelectric cooling. Published by the American Physical Society 2024

Bromine‐Substituted Cation Anchoring to Suppress Ion Migration in Alternating Cations Intercalation‐Type Perovskite for Stable X‐Ray Detection

Metal halide perovskites have emerged as excellent direct X‐ray detection materials owing to their large mobility‐lifetime product, strong radiation absorption, and low‐cost preparation. However, it is still a challenge to achieve stable X‐ray detection due to the limitations associated with severe ion migration under high voltage bias. Herein, based on a bromine substitution strategy to suppress ion migration, a 2D alternating cations intercalation‐type (ACI) perovskite, (R‐MPA)(BrEA)PbBr4 (1, R‐MPA = methylphenethylamm‐onium; BrEA = 2‐bromoethylamine) is reported to achieve X‐ray detection. Specifically, introducing Br atom forms additional intermolecular interactions (i.e., Br···π) and enhances hydrogen bonding interactions, greatly improving the structure stability. Based on this enhanced interaction, 1 presents a higher activation energy of ion migration (1.05 eV) than that of (R‐MPA)EAPbBr4 resulting in a lower dark current drift of 9.17 × 10−8 nA cm−1 s−1 V−1, revealing that suppression of ion migration. Consequently, the 1‐based detector shows a high sensitivity of 2653.7 μC Gy−1 cm−2 and, most importantly, outstanding operational and environmental stability, maintaining ≈91% of its initial sensitivity at 50 V bias after 90 days in the air. This work demonstrates an efficient strategy for introducing halogen interactions via ACI to suppress ion migration for stable X‐ray detection.

Dark Current Suppression in Two‐dimensional Histamine Lead Iodine Perovskite Single Crystal for X‐ray Detection and Imaging

AbstractLead halide perovskites have emerged as attractive X‐ray detector materials, owing to properties such as strong X‐ray stopping power, excellent carrier transport, and high sensitivity. Additionally, they can be easily prepared by using solution‐based synthesis approaches. However, traditional 3D (three‐dimensional) perovskites X‐ray detectors have shown limited application due to high dark currents generated under bias voltage as a result of strong ion migration. In this work, an X‐ray detector with a vertical structure device is demonstrated using 2D (two‐dimensional) histamine lead halide perovskite single crystal HAPbI4 (HPI, HA = histamine). Due to the dielectric screening effect of diamine and the vertical structure of the HPI device, the fabricated detector shows a sensitivity of 7737 µC Gyair−1 cm−2 under a bias voltage of 30 V. Furthermore, the detector shows a sensitivity of 293 µC Gyair−1 cm−2 and detection limit of 51.38 nGyair s−1 without bias voltage, wherein the dark current is almost completely suppressed. All of these properties indicate the X‐ray detection device is a promising candidate for next‐generation optoelectronic applications.

Tunable electronic and optoelectronic characteristics of two-dimensional β-AsP monolayer: a first-principles study.

Two-dimensional (2D) semiconductors have attracted a great deal of interest from the electrical engineering community due to their intriguing electronic properties. In this study, we have systematically investigated the electronic and optoelectronic properties of β-AsP monolayers by first-principles calculations combined with strain engineering. The results show that the β-AsP monolayer has a suitable indirect bandgap and a strain-tunable electronic structure. On this basis, the designed two-electrode photodetector based on β-AsP monolayer exhibits a strong photoelectric response in the near-ultraviolet region, and the maximum photocurrent can reach 74a02 per phonon under the applied bias voltage of 1 V. In particular, the strain engineering not only improves the photoelectric performance of the β-AsP-based photodetector, but also adjusts its photodetection range. These findings suggest that β-AsP monolayers are ideal candidates for the development of near-ultraviolet photodetectors and optoelectronic devices.

Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique

In this work, we present the novel application of SiNx stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiNx passivation significantly enhances the barrier height at the heterojunction beneath the gate, maintaining it above the quasi-Fermi level even as Vds rises to 20 V. As a result, in GaN devices with a gate length of 160 nm, the devices with compressive stress SiNx passivation exhibit significantly lower drain-induced barrier lowering (DIBL) factors of 2.25 mV/V, 2.56 mV/V, 4.71 mV/V, and 3.84 mV/V corresponding to drain bias voltages of 5 V, 10 V, 15 V, and 20 V, respectively. Furthermore, as Vds increases, there is an insignificant degradation in transconductance, subthreshold swing, leakage current, or output conductance. In contrast, the devices with stress-free passivation show relatively higher DIBL factors (greater than 20 mV/V) and substantial degradation in pinch-off performance and output characteristics. These results demonstrate that the SiNx stress-engineering technique is an attractive technique to facilitate high-performance and high-reliability GaN-based HEMTs for radio frequency (RF) electronics applications.

Innovative active terahertz modulator based on dynamic graphene-silicon arrays

This paper presents an innovative active terahertz (THz) modulator that utilizes dynamic graphene-silicon arrays (DGSAs) to overcome the challenges of dynamically manipulating THz waves. The DGSA combines the exceptional electrical properties of graphene with the enhanced optical absorption capabilities of silicon arrays, enabling dual-mode active control through optical pumping and electrical biasing. An 808 nm laser is used to photoexcite carriers in the silicon arrays for optical pumping while a bias voltage modulates the Fermi level of graphene, subsequently varying Si conductivity and influencing the transmission properties of THz waves. Simulations have demonstrated modulation depths of up to 94% at 2.5 THz in the transmission mode and 89% at 1 THz in the reflection mode. Furthermore, this study delves into a theoretical analysis and numerical simulations, exploring the modulation mechanisms, including the role of graphene’s Drude model and PN junction effects. These insights provide a robust theoretical framework for understanding the DGSA’s operation and lay a solid foundation for the design and optimization of high-performance THz modulation devices.

Tuning Electronic Friction in Structural Superlubric Schottky Junctions.

Friction at sliding interfaces, even in the atomistically smooth limit, can proceed through many energy dissipation channels, such as phononic and electronic excitation. These processes are often entangled and difficult to distinguish, eliminate, and control, especially in the presence of wear. Structural superlubricity (SSL) is a wear-free state with ultralow friction that closes most of the dissipation channels, except for electronic friction, which raises a critical concern of how to effectively eliminate and control such a channel. In this work, we construct a Schottky junction between a microscale graphite flake and a doped silicon substrate in the SSL state to address the issue and achieve wide-range (by 6×), continuous, and reversible electronic friction tuning by changing the bias voltage. No wear or oxidation at the sliding interfaces was observed, and the ultralow friction coefficient indicated that electronic friction dominated the friction tuning. The mechanism of electronic friction is elucidated by perturbative finite element analysis, which shows that migration of the space-charge region leads to drift and diffusion of charge carriers at Schottky junctions, resulting in energy dissipation.

Wear and Corrosion Resistance of ZrN Coatings Deposited on Ti6Al4V Alloy for Biomedical Applications

Zirconium nitrides films were synthesized on Ti6Al4V substrates at a bias voltage of −50 V, −80 V, −110 V and −150 V by the direct current (DC) reactive magnetron sputtering technique. The as-deposited coatings were characterized by X-ray diffraction (XRD), Fourier-transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The wear and corrosion resistance of the obtained ZrN coatings were evaluated to determine the possibility for their implementation in modern biomedical applications. It was found that the intensity of the diffraction peak of the Zr-N phase corresponding to the (1 1 1) crystallographic plane rose as the bias voltage increased, while the ZrN coatings’ thickness reduced from 1.21 µm to 250 nm. The ZrN films’ surface roughness rose up to 75 nm at −150 V. Wear tests showed an increase in the wear rate and wear intensity as the bias voltage increased. Corrosion studies of the ZrN coatings were carried out by three electrochemical methods: open circuit potential (OCP), cyclic voltammetry (polarization measurements) and electrochemical impedance spectroscopy (EIS). All electrochemical measurements confirmed that the highest protection to corrosion is the ZrN coating, which was deposited on the Ti6Al4V substrate at a bias voltage of −150 V.

Sub-volt forward-biased silicon microring modulator at 210 Gb/s.

Low-voltage and efficient optical modulators in the silicon photonic (SiPh) platform are highly desired for realizing high-speed connectivity in chip level interconnects, data center interconnects, and high-performance computing (HPC). With the modulator operating at CMOS compatible voltages, high-voltage modulator drivers are no longer needed, thus reducing driver design complexity and power consumption. We demonstrate a silicon microring modulator (MRM) operating at a driving voltage of 0.8 Vpp. We achieve high modulation efficiency by using a small forward bias of 0.2 V: the forward bias voltage allows the modulator to have an enhanced optical modulation amplitude (OMA) by operating near injection mode, modulating 180 Gb/s (180 Gbaud) non-return-to-zero (NRZ) and 210 Gb/s (105 Gbaud) 4-level pulse amplitude modulation (PAM-4) free of electrical or optical amplification. We also demonstrate the operation at zero bias and achieve up to 200 Gb/s. Error-free operation was observed at 130 Gb/s (NRZ). The absence of an external biasing voltage can further improve energy efficiency and simplifies device integration.

ALTP heat flux sensor: the compensation of the ordinary Seebeck effect through a new structure

Abstract This technical note highlights the detrimental impact of the ordinary Seebeck effect (SE) on the accuracy of atomic layer thermopile (ALTP) heat flux sensors and presents an innovative structural design and correction approach. ALTP sensors are based on the Transverse Seebeck effect (TSE), linking their output directly to the temperature difference (ΔTz ) across the sensor’s sensitive film layers. Experimental analysis reveals that a temperature gradient (ΔTx ) along the film’s tilt direction, via the SE, introduces a bias voltage, causing a substantial maximum relative error of 56.4% in measurements. To counteract this issue, we introduce a novel structural configuration and correction strategy, effectively reducing the relative error to 4.1%, and thereby significantly enhancing the precision of ALTP heat flux sensors.

CsPbBr3 perovskite quantum dots/p-GaN heterojunction for ultraviolet-visible spectrum photodetectors

All-inorganic perovskites have attracted increasing attention because of their strong environmental stability and excellent photoelectric properties. However, the limited spectral response range of perovskite photodetectors restricts them in practical applications. In this work, an ultraviolet–visible photodetector with a wide spectral response and a high responsivity was prepared by constructing a CsPbBr3 quantum dots (QDs)/p-GaN heterojunction. The type-II energy band alignment formed by the heterojunction is conducive to the transport of photogenerated carriers, resulting in a high responsivity. Under certain conditions, the device can obtain responsivity values of 5 A/W and 850 mA/W under 350 and 725 nm illumination, respectively, which are comparable to those of other perovskite-based photodetectors. In addition, the photoresponse mechanism of the device is revealed through first-principles calculations of the heterojunction and the device. The enhanced light absorption of the heterojunction and the special band bending under different bias voltages improve the photoelectric performance of the device. This work can provide valuable insights into high-performance photodetectors based on all-inorganic perovskite QDs heterojunctions in terms of band regulation and device performance improvement.

DC characteristics of a dynamic vision sensor's photoreceptor circuit evaluated for event-based sensing in the mid-wave infrared

Forthcoming infrared event-based sensors will have utility in the space-based surveillance domain where they could potentially perform traditional sensing and tracking functions with significantly enhanced temporal resolution and reduced downstream datalink demands and power consumption. As a first step toward extending event-based sensing technology into the mid-wave infrared, a DC simulation of the conventional event-based sensor unit cell's photoreceptor circuit is performed, and the results are compared with measurements of a printed circuit board implementation of the same circuit to assess what design freedom is available to interface the photoreceptor with a mid-wave infrared photodetector. Detailed analysis of the circuit and measurements provides insight into which fundamental properties of the transistors drive the photoreceptor's dynamic range and demonstrates several characteristics that are relevant to mid-wave infrared sensing. These characteristics include the capability to produce a stable, low voltage bias on the infrared photodetector to maximize sensitivity, and that operating the circuit below room temperature increases the photoreceptor's dynamic range. Measurements show that even the simplest implementation of the photoreceptor circuit exhibits a dynamic range of logarithmic compression of 150 dB at room temperature. However, the dynamic range is ultimately limited by the mid-wave infrared photodetector's dark current activation energy, which is significantly lower than the threshold voltage (energy) of the photoreceptor's feedback transistor and, thus, there is an incentive for the photodetector's dark current to be diffusion-limited.

Fluorescence from a single-molecule probe directly attached to a plasmonic STM tip

The scanning tunneling microscope (STM) provides access to atomic-scale properties of a conductive sample. While single-molecule tip functionalization has become a standard procedure, fluorescent molecular probes remained absent from the available tool set. Here, the plasmonic tip of an STM is functionalized with a single fluorescent molecule and is scanned on a plasmonic substrate. The tunneling current flowing through the tip-molecule-substrate junction generates a narrow-line emission of light corresponding to the fluorescence of the negatively charged molecule suspended at the apex of the tip, i.e., the emission of the excited molecular anion. The fluorescence of this molecular probe is recorded for tip-substrate nanocavities featuring different plasmonic resonances, for different tip-substrate distances and applied bias voltages, and on different substrates. We demonstrate that the width of the emission peak can be used as a probe of the exciton-plasmon coupling strength and that the energy of the emitted photons is governed by the molecule interactions with its environment. Additionally, we theoretically elucidate why the direct contact of the suspended molecule with the metallic tip does not totally quench the radiative emission of the molecule.

Analysis of SiNx Waveguide-Integrated Liquid Crystal Platform for Wideband Optical Phase Shifters and Modulators

In this study, the potential of employing SiNx (silicon nitride) waveguide platforms to enable the use of liquid-crystal-based phase shifters for on-chip optical modulators was thoroughly investigated using 3D-FDTD (3D finite-difference time-domain) simulations. The entire structure of liquid-crystal-based Mach–Zehnder interferometer (MZI) optical modulators, consisting of multi-mode interferometer splitters, different tapering sections, and liquid-crystal-based phase shifters, was systematically and holistically investigated with a view to developing a compact, wideband, and CMOS-compatible (complementary metal-oxide semiconductor) bias voltage optical modulator with competitive modulation efficiency, good fabrication tolerance, and single-mode operation using the same SiNx waveguide layer for the entire device. The trade-off between several important parameters is critically discussed in order to reach a conclusion on the possible optimized parameter sets. Contrary to previous demonstrations, this investigation focused on the potential of achieving such an optical device using the same SiNx waveguide layer for the entire device, including both the passive and active regions. Significantly, we show that it is necessary to carefully select the phase shifter length of the LC-based (liquid crystal) MZI optical modulator, as the phase shifter length required to obtain a π phase shift could be as low as a few tens of microns; therefore, a phase shifter length that is too long can contradictorily worsen the optical modulation.

Analyzing negative differential resistance and capacitive effects in SiOx-based resistive switching devices for security applications

In this work, we analyze the negative differential resistance and capacitive effects in SiOx-based resistive switching devices. The cause of the negative differential effect has been investigated through the study of the switching mechanism in the devices. It has been observed that there is a combination of trap-controlled space charge limited conduction and trap-assisted Poole-Frenkel effect in the devices. Trapping and de-trapping of injected electrons in the defects within the silica structure causes the negative differential resistance effect. This characteristic feature can be employed to design chaotic circuits for security applications. In addition, the high electric field developed in the device compared to the applied field during the change of bias voltage from ±5V–0V, results in a capacitor discharge-like effect. This work will be a step forward in achieving the global Sustainable Development Goal of Peace, Justice, and Strong Institutions (SDG 16).

Topology-optimized terahertz real-time reconfigurable multifunctional liquid-crystal-coding metasurface

In this paper, a reflective terahertz reconfigurable multifunctional coding metasurface based on topology optimization using liquid crystal (LC) is presented. First, the LC metasurface unit is topologically optimized using the NSGA-II multi-objective optimization algorithm. By applying the bias voltage to dynamically adjust the dielectric constant of the LC, the metasurface unit is capable of 2-bit coding at the frequency of 0.67 THz. Then, based on the designed metasurface unit, the array arrangements of the coding metasurface are reversely designed, which makes the metasurface realize flexible control and dynamic switching between beam assignment and vortex beam generation. The results show that for the beam assignment, the single-beam and multi-beam control can be realized with the reflected electromagnetic waves at continuous arbitrary angles in the range of elevation angle of 40° and azimuth angle of 360°. Moreover, the elevation angle and azimuth angle of each beam in the multi-beam can be controlled independently. Using the Fourier convolution addition operation, the control range of the single-beam elevation angle can be expanded. For the vortex beam, the single vortex beam and the multi-vortex beam can be generated in the range of elevation angle of 40° and azimuth angle of 360° with topological charges l=±1, ±2, ±3 at arbitrary angles. This provides flexibility and diversity in the generation of vortex beams. Therefore, the proposed terahertz LC metasurface can realize flexible control of reconfigurable functions and has certain application prospects in terahertz communication, phased array radar, and vortex radar.

A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

Designing SPADs with high sensitivity in a wide wavelength range is crucial since the applications utilizing SPAD-based sensors target different parts of the spectrum. Here, we introduce a novel technique to achieve a wider sensitivity spectrum through the insertion of a second multiplication region into the depletion region. Thanks to the proposed method, at 5.5 V excess bias voltage, the fabricated devices achieved a PDP of 78% peak at 500 nm and 25.5% at 850 nm wavelength. At the same excess bias, we measured a normalized noise of 3.7 cps/μm2 and a jitter of 165 ps at 517 nm FWHM.

Behavior of a defect in a flexible carbon nanotube

Abstract Carbon nanotubes (CNTs) play an indispensable role in the design and application of flexible devices due to their unique physical and chemical properties. ‌This study theoretically investigates the behavior of defects in bent CNTs. The results indicate that when the defect is under compressive strain, the conductance of the device decreases as the bending angle increases. Conversely, when the defect is under tensile strain, the conductance of the device increases with a larger bending angle.This phenomenon is primarily attributed to the enhancement of scattering states corresponding to the defect under tensile strain and the weakening of these states under compressive strain. Under bias voltage, similar patterns are observed for transmission peaks corresponding to the defect. These findings contribute to the device design process, enabling the exploitation of advantages and avoidance of disadvantages, ultimately leading to the development of flexible CNTs- devices.‌

Direct characterisation of AM-to-PM phenomena in fast Si and InGaAs photodiodes

The direct measurement method of AM-to-PM phenomena in fast silicon and InGaAs photodiodes is described. The setup is simple, relatively inexpensive and allows fast and precise measurements not only in a laboratory environment. During sample tests, the authors have found that the influence of bias voltage on the phase shift of an optical signal conversion is significant. The reported effect together with the influence of modulation depth on phase shift (AM-to-PM conversion) has a negative impact on an optical signal reception especially in coherent applications. The authors show that, with our proposed setups, it is possible to find optimal bias voltage and optimal optical power in order to reduce electrical phase noise of the photodetector.

Interface Energy‐Level Reorganization for Efficient Perovskite γ‐Ray Detectors

AbstractMetal halide perovskites are promising candidates for gamma‐ray (γ‐ray) spectrum detectors. However, achieving high‐resolution energy spectra in single‐photon pulse‐height analysis mode remains challenging, due to the inevitable leakage currents degrade the recognizable fingerprint energies which is critical for resolving γ‐ray spectroscopy. We demonstrate under high bias voltage, a deficient contact barrier can lead to excessive surface charge injection, thereby increasing leakage current from electrodes to perovskites. Hence, we conceive to employ surface ligand engineering on perovskite single crystals to manipulate energy levels to suppress leakage current. In particular, anchoring a strong dipole ligand onto the perovskite induced surface charge‐density displacement, leading to a downward band bending and heightened the corresponding contact barrier. Consequently, the strategy minimized the detectors’ leakage current by an order of magnitude, to as low as 44 nA cm−2 at −100 V. The resulting detectors show a significant improvement in energy resolution, 3.9 % for 22Na 511 keV γ‐rays has been achieved at room temperature. The resulting detector further resolves each fingerprint energy for 152Eu γ‐spectrum, representing one of the best γ‐rays perovskite detectors reported to date. Moreover, the detectors exhibited stabilized energy resolution without any degradation under a continuous electric field (1,000 V cm−1) for over 300 minutes, representing the longest longevity reported to date.