Bias Modulation Frequency Research Articles

Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors

We report on the results of a comprehensive study of THz emission from a set of dedicated AlGaN/GaN high-electron-mobility transistors. We find that voltage-biased transistors indeed emit in the THz frequency range, as reported in the literature; however, our data let us conclude that this radiation cannot be directly attributed to plasmonic instability phenomena. Instead, two other distinct mechanisms are identified. One is based on high-frequency self-oscillations originating from positive feedback within the frequency range where the transistor provides gain. Such oscillations are especially facilitated by the integration of antenna structures and cease to exist after taking specific measures for circuit stabilization. Another mechanism is identified for the case of broadband emission from multifinger transistors fabricated without any specific antenna. In contrast to the predictions of the plasmonic instability picture, the spectra of this emission depend on the gate and drain biasing conditions and on the bias modulation frequency. This emission can be understood as a combination of thermal emission from the heated material and from thermally excited plasmons and trap states.

Eigenfrequency detecting method with sawtooth wave modulation theory for navigation grade fiber optic gyroscopes

Eigenfrequency is a key parameter for the fiber optic gyroscope (FOG). An eigenfrequency detecting method for FOGs, especially for high-grade FOGs, such as the navigation grade FOGs, is proposed. The eigenfrequency is detected with the sawtooth wave modulation theory. Adjusting the frequency of the sawtooth wave to an even integer of the eigenfrequency, the error signal caused by the sawtooth wave modulation will be zero, then the eigenfrequency can be calculated by the value of the sawtooth wave frequency exactly and the bias modulation frequency is at the eigenfrequency accurately. It is demonstrated experimentally with an FOG, the length of whose sensing coil is about 1200 m, that the accuracy of the eigenfrequency measurement is better than 1.2 ppm (0.1 Hz). With its high accuracy, not only can the frequency of the bias modulation be adjusted to the eigenfrequency precisely, but also this method can be used as an eigenfrequency detector for studying the characteristics of the sensing coil according to the eigenfrequency to study the mechanism of the errors generated in the FOGs.

Dual frequency open-loop electric potential microscopy for local potential measurements in electrolyte solution with high ionic strength

Recent development of open-loop electric potential microscopy (OL-EPM) has enabled to measure local potential distribution at a solid/liquid interface. However, the operating environment of OL-EPM has been limited to a weak electrolyte solution (<1 mM). This has significantly limited its application range in biology and chemistry. To overcome this limitation, we have developed dual frequency (DF) mode OL-EPM. In the method, an ac bias voltage consisting of two frequency components at f(1) and f(2) is applied between a tip and sample. The local potential is calculated from the amplitudes of the f(1) and |f(1) - f(2)| components of the electrostatic force. In contrast to the conventional single frequency (SF) mode OL-EPM, the detection of the 2f(1) component is not required in DF mode. Thus, the maximum bias modulation frequency in DF mode is twice as high as that in SF mode. The high bias modulation frequency used in DF mode prevents the generation of electrochemical reactions and redistribution of ions and water, which enables to operate OL-EPM even in a strong electrolyte solution. In this study, we have performed potential measurements of nanoparticles on a graphite surface in 1 and 10 mM NaCl solution. The results demonstrate that DF mode OL-EPM allows measurements of local potential distribution in 10 mM electrolyte solution.

Scanning tip measurement for identification of point defects

Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

Focus on Photonics and Imaging

Focus on Photonics and Imaging