In this work we show the influence of material preparation technology on the thermoluminescent properties of single crystalline films (SCFs) of Ce3+-doped Lu2SiO5 (LSO) and Y2SiO5 (YSO) orthosilicates. LSO:Ce and YSO:Ce SCFs were grown by the liquid phase epitaxy method from two different melt-solutions based on PbO-B2O3 and Bi2O3 fluxes. Absorption, cathodoluminescence, and thermoluminescent properties of LSO:Ce and YSO:Ce SCFs grown from the two previously mentioned types of fluxes were compared, and results of spectrally resolved thermoluminescence measurements and thermoluminescent glow curves of SCFs recorded in different spectral ranges were presented. We have found that the observed differences in thermoluminescent properties of the SCFs under study can be caused by the domination of Ce4+ and Pb2+ emission centers in LSO:Ce and YSO:Ce SCFs grown using PbO-B2O3 flux, and Ce3+ and Bi3+ emission centers in the SCFs grown from Bi2O3 flux.