Berry Phase Effects Research Articles

The delicate coupling between magnetism and magneto-transport in Fermi-energy-adjusted MnBi2Te4 crystals

We explored the coupling between magnetic and magneto-transport properties in MnBi2Te4 crystals with Fermi energy EF ranging from 10 to 100 meV in the conduction band. Electrical, magnetic, and magneto-transport measurements reveal distinct behaviors depending on EF. At lower EF values (10 meV), MnBi2Te4 exhibits degenerate-semiconductor-like electrical transport and ferrimagnetism, with weak coupling between magneto-resistance and ferrimagnetism. In contrast, MnBi2Te4 displays metallic transport and antiferromagnetism (AFM) at higher Fermi energies, with magneto-resistance strongly coupled to antiferromagnetism and canted antiferromagnetism under a large external magnetic field. Remarkably, Hall measurements demonstrate a pronounced anomalous Hall resistivity (AHR) when the EF of MnBi2Te4 is 10 meV, larger than that reported for other bulk MnBi2Te4 crystals in the literature. Significant AHR is attributed to the Berry-phase effect in electronic-band structure based on first-principles calculation. The evolution of magnetic and magneto-transport properties in EF shifted MnBi2Te4 can be semi-quantitatively explained by the Ruderman–Kittel–Kasuya–Yosida interaction between neighboring MnTe layers. Our work suggests that the strongly Fermi-energy-sensitive magneto-transport properties observed in MnBi2Te4 may be useful in developing magnetic sensors/detectors.

Thermoelectric Response in Nodal‐Point Semimetals

AbstractIn this review, the thermoelectric properties in nodal‐point semimetals with two bands are discussed. For the two‐dimensional (2D) cases, it is shown that the expressions of the thermoelectric coefficients take different values depending on the nature of the scattering mechanism responsible for transport, by considering examples of short‐ranged disorder potential and screened charged impurities. An anisotropy in the energy dispersion spectrum invariably affects the thermopower quite significantly, as illustrated by the results for a node of semi‐Dirac semimetal and a single valley of graphene. The scenario when a magnetic field of magnitude is applied perpendicular to the plane of the 2D semimetal is also considered. The computations for the three‐dimensional (3D) cases necessarily involve the inclusion of nontrivial Berry phase effects. In addition to demonstrating the expressions for the response tensors, the exotic behavior observed in planar Hall and planar thermal Hall set‐ups is discussed.

Exploring anisotropic phases and spin transport in perovskite heterostructures: Insights into 3d/5d interfaces for antiferromagnetic spintronics

Transition metal oxides (TMOs) demonstrate a broad spectrum of properties encompassing electronic correlations, anisotropic transport, magnetism, and optical behavior. The anisotropy arises from both intrinsic crystal symmetry and extrinsic factors like epitaxial strain and structural asymmetry at TMO interfaces. Weiss and Neel's work has elucidated anisotropic magnetic behavior in antiferromagnetic (AFM) materials. AFM TMOs exhibit unique magnetotransport behavior, including weak antilocalization (WAL) and anisotropic magnetoresistance (AMR). Understanding the magnetic structure and band topology in AFM perovskites and their interfaces enables the tailored design of materials for spintronics and energy conversion. In few interfaces lacking inversion symmetry, Rashba spin–orbit coupling (SOC) induces WAL, a quantum correction in conductivity in a two-dimensional electronic system. Electron accumulation and charge transfer across 3d, 5d transition metal-based perovskite interfaces affect WAL and AMR, as observed in 3d/3d and 3d/5d AFM heterostructures, respectively. Advancements in spintronics rely on exploring spin-dependent transport anisotropy. This review focuses on various scattering mechanisms, categorized as extrinsic and intrinsic, in anisotropic transport, particularly in 3d/5d AFM superlattices. The WAL scattering mechanism depends on both intrinsic factors related to Rashba SOC-induced band topology and extrinsic sources like spin impurities and lattice ions. Moreover, the investigation into AMR mechanisms involves the application of impurity-based extrinsic scattering models, which are aligned with the Rashba and Dresselhauss models on Fermi surfaces. This exploration specifically targets the interface of two-band insulators, exemplified by LaAlO3/SrTiO3 and LaVO3/KTaO3. Furthermore, this model achieves comprehensive coverage, extending its applicability to 3d/5d AFM heterostructures like LaMnO3/SrIrO3 and CaMnO3/CaIrO3. Additionally, the intrinsic scattering mechanism tied to Berry phase effects related to band topology is studied, focusing on the CaMnO3/CaIrO3 superlattice. Despite manipulation challenges stemming from reduced stray fields, AFM materials show potential in interface physics and applications within the realm of spintronics.

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

The manipulation of valley-dependent properties in two-dimensional (2D) materials is intriguing for developing valleytronics. Using first-principles calculations, we explore valley-dependent properties of Janus SVGeN2 monolayer and reveal large and tunable valley polarization by tensile strain. The SVGeN2 monolayer possesses excellent stability. Furthermore, strain-driven topological magneto-valley phase transitions are predicted for this monolayer, leading to the valley quantum anomalous Hall (VQAH) phenomenon. The VQAH state, which is featured by the coexistence of complete valley polarization and topological phase, is confirmed by sign reversal of Berry curvature and the nontrivial band topology. The calculated magnetic anisotropy energy indicates that the Janus SVGeN2 monolayer possesses a ferromagnetic ground state and in-plane magnetization. Our investigation provides some physical insights into the strain-driven topological phase transition and manipulation of valley-dependent properties to realize giant valley polarization in the Janus 2D magnet.

Robust room-temperature anomalous Nernst effect over a broad thickness and composition range in chemically disordered FexPt100−x films

The anomalous Nernst effect (ANE) has been under consideration for potential transverse thermoelectric applications. However, the utilized material systems are generally limited to chemically ordered crystals with notable features of nontrivial band topology and/or strong spin–orbit coupling, such as topological ferromagnets and antiferromagnets. In this study, we present the observation of a robust room-temperature ANE in a chemically disordered ferromagnet, specifically an A1-type FexPt100−x alloy. The observed anomalous Nernst thermopower Sxy (∼1.6 μV/K) remains stable over a wide range of thicknesses (6 ≤ t ≤ 100 nm) and compositions (46 ≤ x ≤ 67), which is in stark contrast to the common situation in topological ferromagnets. This behavior can be attributed to both the large anomalous Nernst conductivity αxy (∼1.3 A K−1 m−1), originating from Berry phase effects, as well as the significant Seebeck-driven anomalous Hall effect that modulates its action through mean-free-path and two-carrier models.

Hidden nontrivial Berry phase and spin-zero effect in Te nanowires

Hidden nontrivial Berry phase and spin-zero effect in Te nanowires

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic layers/domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.

Anomalous Lateral Optical Force as a Manifestation of the Optical Transverse Spin

AbstractInteracting with an evanescent wave, an achiral particle can experience a lateral optical force (LOF) in a direction which is perpendicular to that of the illuminating photon momentum while the system apparently has the left–right symmetry. Here, using the Cartesian multipole expansion theory, a general relationship between LOF and spin and momentum is established. Most importantly, it is demonstrated that an anomalous LOF exerted on an isotropic achiral particle of arbitrary size and composition is proportional to the optical transverse spin in the incident evanescent wave that carries pure transverse spin associated with spin‐momentum locking. Manifesting itself as a mechanical consequence of the Berry phase effect, this anomalous LOF suggests a direct detectability of the transverse spin of light, as well as mimicking the transverse shift of light in the spin Hall effect of photons.

Design of sign-reversible Berry phase effect in 2D magneto-valley material

Manipulating sign-reversible Berry phase effects is both fundamentally intriguing and practically appealing for searching for exotic topological quantum states. However, the realization of multiple Berry phases in the magneto-valley lattice is rather challenging due to the complex interactions from spin–orbit coupling (SOC), band topology, and magnetic ordering. Here, taking single-layer spin-valley RuCl2 as an example, we find that sign-reversible Berry phase transitions from ferrovalley (FV) to half-valley semimetal (HVS) to quantum anomalous valley Hall effect (QAVHE) can be achieved via tuning electronic correlation effect or biaxial strains. Remarkably, QAVHE phase, which combines both the features of quantum anomalous Hall and anomalous Hall valley effect, is introduced by sign-reversible Berry curvature or band inversion of and orbitals at only one of the K/Kʹ valleys of single-layer RuCl2. And the boundary of QAVHE phase is the HVS state, which can achieve 100% intrinsically valley polarization. Further, a k ⋅ p model unveiled the valley-controllable sign-reversible Berry phase effects. These discoveries establish RuCl2 as a promising candidate to explore exotic quantum states at the confluence of nontrivial topology, electronic correlation, and valley degree of freedom.

Nonadiabatic Dynamics in a Continuous Circularly Polarized Laser Field with Floquet Phase-Space Surface Hopping

Nonadiabatic chemical reactions involving continuous circularly polarized light (cw CPL) have not attracted as much attention as dynamics in unpolarized/linearly polarized light. However, including circularly (in contrast to linearly) polarized light allows one to effectively introduce a complex-valued time-dependent Hamiltonian, which offers a new path for control or exploration through the introduction of Berry forces. Here, we investigate several inexpensive semiclassical approaches for modeling such nonadiabatic dynamics in the presence of a time-dependent complex-valued Hamiltonian, beginning with a straightforward instantaneous adiabatic fewest-switches surface hopping (IA-FSSH) approach (where the electronic states depend on position and time), continuing to a standard Floquet fewest switches surface hopping (F-FSSH) approach (where the electronic states depend on position and frequency), and ending with an exotic Floquet phase-space surface hopping (F-PSSH) approach (where the electronic states depend on position, frequency, and momentum). Using a set of model systems with time-dependent complex-valued Hamiltonians, we show that the Floquet phase-space adiabats are the optimal choice of basis as far as accounting for Berry phase effects and delivering accuracy. Thus, the F-PSSH algorithm sets the stage for future modeling of nonadiabatic dynamics under strong externally pumped circular polarization.

Electronic-correlation induced sign-reversible Berry phase and quantum anomalous valley Hall effects in Janus monolayer OsClBr.

Topological phase transition can be induced by electronic correlation effects combined with spin-orbit coupling (SOC). Here, based on the first-principles calculations +U approach, the influence of electronic correlation effects and SOC on topological and electronic properties of the Janus monolayer OsClBr is investigated. With intrinsic out-of-plane (OOP) magnetic anisotropy, the Janus monolayer OsClBr exhibits a sequence of states, namely, the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous valley Hall effect (QAVHE) to HVM to FV states with increasing U values. The QAVHE is characterized by a chiral edge state linking the conduction and valence bands with a Chern number C = 1, which is closely associated with the band inversion between dx2-y2/dxy and dz2 orbitals, and sign-reversible Berry curvature. The section with larger U values (2.31-2.35 eV) is very essential for determining the new HVM and QAVHE states, and also proves that a strong electron correlation effect exists in the interior of the Janus monolayer OsClBr. When taking into consideration a representative U value (U = 2.5 eV), a valley polarization value of 157 meV can be observed, which can be switched by reversing the magnetization direction of Os atoms. It is noteworthy that the Curie temperature (TC) strongly depends on the electronic correlation effects. Our work provides a comprehensive discussion on the electronic and topological properties of the Janus monolayer OsClBr, and demonstrates that the electronic correlation effects combined with SOC can drive the emergence of QAVHE, which will open up new opportunities for valleytronic, spintronic, and topological nanoelectronic applications.

Resonant Contributions to Oscillatory Phenomena under Conditions of Magnetic Breakdown during Reconstructions of Electron Dynamics on the Fermi Surface

We consider here special closed electron trajectories that arise during reconstructions of electron dynamics on the Fermi surface in the presence of strong magnetic fields, as well as the phenomenon of intraband magnetic breakdown that occurs on such trajectories. We consider cases where the electronic spectrum arising in such a situation corresponds to the resonant contribution to quantum oscillations. In the paper, all cases where this occurs are singled out, and the possible influence of the appearance of the Berry phase and other effects on the described phenomena is also considered.

Exploring the Effect of DNA Noise and Current on the Berry Phase Effects

We have studied here that bend and twist are not two separate entities but one depends on the other, also other hand entanglement of two DNA molecule inserting spin-echo to one of them marks the transform of Berry phase that can be exact as a calculate of entanglement. This formalism helps us to depict the thermodynamic entropy as entanglement entropy and the entanglement of spin can be used as a resource for genetic in order. This implies that the transcription of genetic in order can be considered in the structure of quantum in sequence hypothesis.

Helical spin ordering in room-temperature metallic antiferromagnet Fe3Ga4

Metallic Fe 3 Ga 4 displays a complex magnetic phase diagram that supports an intermediate antiferromagnetic (AFM) helical spin structure (HSS) state at room temperature which lies between two ferromagnetic (FM) phases. Magnetic measurements along the three crystallographic axes were performed in order to develop a model for the temperature and field dependence of the HSS state. These results show that the AFM state is a helically ordered spiral propagating along the c -axis with the magnetic moments rotating in the ab -plane. Under applied magnetic field, the AFM state exhibits a metamagnetic transition to conical ordering before entering a fully field-polarized FM state at high fields. The conical ordering in the AFM state is anisotropic even within the ab -plane and may gives rise to Berry phase effects in transport measurements. Metallic conductivity from density of states computations was confirmed through resistivity measurements and no anomalous behavior was observed through the various magnetic transitions. • Magnetic measurements on aligned single crystals of Fe 3 Ga 4 were performed to understand the magnetic ordering. • Metamagnetic transitions were observed in the AFM phase as the ab -plane helical order evolves with increased field. • The metallic nature of Fe 3 Ga 4 was confirmed though electrical resistivity measurements and through density of states calculations. • Extensive density functional theory (DFT) calculations were performed to understand the magnetic ground state of this system.

Anomalous Hall effect and perpendicular magnetic anisotropy in ultrathin ferrimagnetic NiCo2O4 films

The inverse spinel ferrimagnetic NiCo2O4 possesses high magnetic Curie temperature TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo2O4 thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo2O4 films on MgAl2O4 substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while TC for 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity (σxy) and its scaling relation with the longitudinal conductivity (σxx) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo2O4.

Quantum Dynamics with Electronic Friction.

A theory of electronic friction is developed using the exact factorization of the electronic-nuclear wave function. No assumption is made regarding the electronic bath, which can be made of independent or interacting electrons, and the nuclei are treated quantally. The ensuing equation of motion for the nuclear wave function is a nonlinear Schrödinger equation including a friction term. The resulting friction kernel agrees with a previously derived mixed quantum-classical result by Dou etal., [Phys. Rev. Lett. 119, 046001 (2017)]PRLTAO0031-900710.1103/PhysRevLett.119.046001, except for a pseudomagnetic contribution in the latter that is here removed. More specifically, it is shown that the electron dynamics generally washes out the gauge fields appearing in the adiabatic dynamics. However, these are fully re-established in the typical situation where the electrons respond rapidly on the slow time scale of the nuclear dynamics (Markov limit). Hence, we predict Berry's phase effects to be observable also in the presence of electronic friction. Application to a model vibrational relaxation problem proves that the proposed approach represents a viable way to account for electronic friction in a fully quantum setting for the nuclear dynamics.

Berry-phase interpretation of thin-film micromagnetism

Magnetic flux densities (B-fields) and field intensities (H-fields) in thin films are investigated from the viewpoints of Berry phase and topological Hall effect. The well-known origin of the topological Hall effect is an emergent B-field originating from the Berry phase of conduction electrons, but Maxwell’s equations predict the relevant perpendicular component Bz to be zero. This paradox is solved by treating the electrons as point-like objects in Lorentz cavities. These cavities can also be used to interpret magnetization measurements in the present and other contexts, but structural and magnetic inhomogeneities lead to major modifications of the Lorentz-hole picture.

Kohler’s rule and anisotropic Berry-phase effect in nodal-line semimetal ZrSiSe

Nodal-line semimetals, ZrSiX (X = S, Se, Te), provide an ideal platform to investigate the tunable Fermi surfaces by replacing chalcogens. Here, we study the magnetoresistance at various magnetic fields and temperatures in ZrSiSe and find the obedience of Kohler’s law and sigmoidal-shaped field dependence, which are different to the behavior reported in ZrSiS. This difference is caused by compensated carriers and the non-negligible contribution from the trivial band in ZrSiSe. Furthermore, an anisotropic Berry-phase effect is observed and can be attributed to the enhanced spin–orbit coupling and the effect of a trivial band induced by Se replacement. Our findings provide further understanding for the topological states in nodal-line semimetal ZrSiX families and reveal the potential applications on magnetic sensors by manipulating the topological states.

Relating the topology of Dirac Hamiltonians to quantum geometry: When the quantum metric dictates Chern numbers and winding numbers

Quantum geometry has emerged as a central and ubiquitous concept in quantum sciences, with direct consequences on quantum metrology and many-body quantum physics. In this context, two fundamental geometric quantities are known to play complementary roles:~the Fubini-Study metric, which introduces a notion of distance between quantum states defined over a parameter space, and the Berry curvature associated with Berry-phase effects and topological band structures. In fact, recent studies have revealed direct relations between these two important quantities, suggesting that topological properties can, in special cases, be deduced from the quantum metric. In this work, we establish general and exact relations between the quantum metric and the topological invariants of generic Dirac Hamiltonians. In particular, we demonstrate that topological indices (Chern numbers or winding numbers) are bounded by the quantum volume determined by the quantum metric. Our theoretical framework, which builds on the Clifford algebra of Dirac matrices, is applicable to topological insulators and semimetals of arbitrary spatial dimensions, with or without chiral symmetry. This work clarifies the role of the Fubini-Study metric in topological states of matter, suggesting unexplored topological responses and metrological applications in a broad class of quantum-engineered systems.

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.