Nanoscale subsurface characterization technologies based on the scanning electron microscope platform offer incomparable advantages of nondestructiveness and penetration depths up to the micrometer scale. However, the electron beam can serve not just as a mechanical/electrical excitation source but also as an excellent nanoscale thermal excitation source, which can facilitate the development of nanoscale subsurface imaging methods based on the Seebeck effect in semiconducting materials. In this work, a subsurface nondestructive imaging technology, scanning thermoelectric capacitance microscopy (STeCM), was developed based on the interaction between a non-steady-state electron beam and semiconducting materials, exploiting the Seebeck effect. In STeCM, a square wave-modulated hot electron beam with huge kinetic energy excites a “thermal wave” in the subsurface local region of the semiconducting sample. The heated local region, acting as a thermoelectric capacitor, undergoes cyclic charging and discharging, leading to the generation of periodic current due to non-equilibrium carrier migration. The second-order harmonic component of this current is demodulated to visualize embedded local thermal/thermoelectric inhomogeneities. Amazingly, for STeCM sample, only a smooth or polished surface is required, eliminating the need for any microfabrication, which will effectively decrease the configuration difficulty in the experiment. STeCM offers an alternative subsurface nondestructive imaging technology for more efficient, simple, and robust characterization.
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