Barrier Height Research Articles

Engineering the SiOx interfacial layer of Si-based metal-insulator-semiconductor junction for photoelectrochemical hydrogen production

Photoelectrochemical (PEC) water splitting provides a potential method to produce renewable hydrogen energy, but there is still plenty of room for improving the efficiency and stability of photoelectrodes. In this paper, we present a metal–insulator-semiconductor (MIS) structure based on p-Si that enables stable and efficient water splitting by engineering the interfacial insulating layer. The silicon oxide (SiOx) film with appropriate thickness and low defects is regrown by a chemical oxidation process, which provides a high-quality insulating layer to passivate the p-Si. The carrier flux, barrier height and interfacial resistance of p-Si based MIS junction can be systematically tuned by controlling the thickness and quality of SiOx layer. Under AM 1.5G illumination, the optimized p-Si/SiOx/Ti/Pt photoelectrode shows an onset potential of 0.5 V vs. RHE, a maximum photocurrent of 28 mA/cm2 and a high applied bias photon-to-current efficiency (ABPE) of 6 %. These results have significant implications for constructing MIS photoelectrodes towards effective water splitting.

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on the electrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p-Si devices were produced by coating both materials between the semiconductor and the metal using the radio frequency (RF) sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by x-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current–voltage and transient photocurrent measurements were performed and analyzed under different light intensities. While the ideality factor (barrier height) values of the devices produced using CoFe and CoFeNi materials were found to be 11.45 (0.487 eV) and 9.86 (0.513 eV), respectively, in the dark, they were obtained as 13.29 (0.446 eV) and 11.02 (0.484 eV) under 100 mW cm−2 illumination. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current–voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. The results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

The in-plane anisotropy of electrical conductance in two-dimensional materials has garnered significant attention due to its potential in emerging device applications, offering an additional dimension to control carrier transport in 2D devices. However, previous research has primarily focused on the anisotropy within electrical channel, neglecting the significant impact of anisotropic electrical contacts of 2D materials. Here, we investigate anisotropic charge transport at the metal contacts of hBN-encapsulated ReS2 using edge-contacted Field Effect Transistors. We observed the marked difference in contact resistance between the cross-b and b directions, suggesting that charge transport from the metal to ReS2 is more efficient along the b direction. This difference in efficiency results in a substantial contact anisotropy, reaching ~70 at 77 K. Our findings indicate that the measured Schottky Barrier Height along the b direction is ~35 meV, which is smaller than along the cross-b direction. Moreover, the tunneling probability along the b direction is two times larger than along the cross-b direction. Our results indicate that both Schottky Barrier Height and tunneling amplitude are the primary contributors to the high contact anisotropy of ReS2. This work provides a valuable guideline for understanding how in-plane orientation influences charge transport at metallic contacts in 2D devices.

Photoelectrochemical properties of doped TiO2 nanowires grown by seed-assisted thermal oxidation

AbstractTitanium dioxide Nanowires (NWs) are particularly interesting because of their very high surface/volume ratio and their photocatalytic activity allows them to be used in a myriad of applications. This manuscript presents a study of nanowires grown on a conductive substrate making use of a seed-assisted thermal oxidation process. To obtain doped NWs, before the oxidation, metallic titanium was doped with Fe (or Cr) by ion implantation technology. Analyses showed good quality Rutile phase and light absorption in the visible range. Transport properties of the NWs/electrolyte junction were investigated by using linear sweep voltammetry and electrochemical impedance spectroscopy. They allowed us to measure the photovoltage and the barrier height of the junction. We also evaluated the density of hole trap states at the interface during illumination. Electrical results indicate that the formation of deep levels, induced by doping, influences the electron concentration in the TiO2 and the transport properties. Graphical abstract

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Abstract Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes.

Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

Assessment of urban underground spaces inundation during extreme rainfall events

ABSTRACT As urbanization progresses and the impacts of climate change become more pronounced, urban flooding has emerged as a critical challenge for resilient cities, particularly concerning urban underground spaces where flooding can lead to significant loss of life and property. Drawing upon a comprehensive review of global research on underground space flood simulation and evacuation, this paper undertakes the modelling of inundation in a substantial underground area during the extraordinary rainfall event on 7 September 2023, in Shenzhen, China. Specifically, it introduces a two-step method to simulate the coupled surface-underground inundation process with high accuracy. The study simulates the inflow processes into three types of underground spaces: parking lots, metro stations, and underpasses. Utilizing the specific force per unit width evaluation, the research examines how varying flood barrier heights influence evacuation time and inundation risk. Subsequently, the paper proposes corresponding evacuation strategies based on the obtained findings. By highlighting the vulnerability of urban underground spaces to flooding, the study underscores the urgent need for further research in this domain.

Solute translocation probability, lifetime, and "rectification" in membrane channels with localized constriction.

We study the translocation probability and lifetime of a solute molecule in a cylindrical membrane channel that contains a localized constriction at an arbitrary location. Using a one-dimensional continuous diffusion description of solute dynamics in the channel, we explore two models. The first one describes a molecule's interaction with the constriction in terms of a narrow rectangular barrier in the potential of mean force. The second novel model proposed here represents this interaction by introducing an infinitely thin permeable partition. It is shown that when the parameters of the two models are chosen to warrant the same translocation probability, both models predict the same mean lifetime of the molecule in the channel. While the translocation probability is independent of the constriction location, the mean lifetime is a function of the location. The benefit of the thin partition model is that it allows one to lump together the height and length of the potential barrier into a single parameter, which is the partition's permeability. It is shown that in the case of an asymmetric location of the localized constriction and strong repulsion between the solutes, the solute flux through the channel is a function of the direction in which it goes, analogous to the phenomenon known in ion channel electrophysiology as rectification.

Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors.

Dielectric/metal/dielectric (DMD) multilayers as a transparent conducting electrode (TCE) have been developed to replace metals due to their high transparency and low sheet resistance. Nickel oxide (NiO) film with a high work function was used as a dielectric to form NiO/Ag/NiO (NAN) TCE, therefore a high barrier height between NAN/zinc oxide (ZnO) interface. In the study, NAN TCE was deposited on ZnO surface to fabricate metal-semiconductor-metal (MSM) photodetectors (PDs) and study its carrier transport mechanism. The NAN TCE has a low sheet resistance of 6.5 Ω/sq. and transmittance more than 40% in a 300-100 nm wavelength range. Such issues result in the figure-of-merit is higher (2.3 × 10-4 Ω-1) than that (2.5 × 10-7 Ω-1) of pure single NiO thin film. As compared to the conventional Au/ZnO MSM-PDs, the NAN/ZnO MSM-PDs demonstrates a lower leakage current as a result of Ni atoms diffusing into ZnO and passivating the defects. Due to the high work function of NiO, the NAN/ZnO interface exhibits a barrier height as high as 0.91 eV. The Au/ZnO MSM-PDs reveals only one carrier conduction of ohmic due to the electrons tunnel form Au into ZnO through the surface defects. In contrast, two distinct carrier transport mechanisms were observed in the NAN/ZnO MSM-PDs. At low-voltage for, ohmic conduction dominates and the electrons inject from NAN to ZnO, trapped by the defect states of ZnO. At high-voltage for, the trapped electrons acquire enough energy and emit from trap to conduction band, entering Poole-Frankel emission transport.&#xD.

226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW

Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well barriers, and quantum well numbers are compared regarding their emission power, operation voltage, and lifetime. Electroluminescence measurements show higher emission power but also an increased operation voltage with increasing Al mole fraction in the n‐AlGaN contact layer. Furthermore, it is found that both the mean emission power and the device lifetime decrease with increasing Al mole fraction (82–89%) of the quantum well barriers and therefore with increasing barrier height. Finally, 226 nm LEDs with 6 and 9 quantum wells are compared. It is observed that the sample with 9 quantum wells shows an around 30% lower mean emission power but, in contrast, the L70 lifetime of these LEDs is higher by a factor of around five. Based on these optimizations, 226 nm LEDs with a maximum external quantum efficiency of 0.28% (wall plug efficiency of 0.18%) as well as an emission power of 2.1 mW and an operation voltage of 9.6 V at 200 mA are realized.

CuO nanoflowers: Multifaceted implications of various precipitating agents on rectification behaviour

In order to achieve the best possible use of traditional energy resources for the preservation of the environment, semiconductor-based optoelectronic devices are one of the most intriguing methods for converting light energy into electrical energy. CuO has been extensively explored as a material for energy conversion and the development of photo-detectors due to its notable characteristics among other metals, especially its non-toxicity, abundance, high efficiency, electrochemical stability and low cost/promising photodiode. However, some drawbacks limit its practical application in white light and photo-detector, including the rapid recombination rate of photo-generated electron-hole pairs and destitute response to visible light. As a result, several strategies have been developed from an optoelectronics perspective to eradicate these deficiencies and make an effort to enhance CuO photodiode activities. In this research work, the electrical characteristics and rectification behaviour of CuO with various precipitating agents have been examined. The CuO nanoparticles can be synthesized by co-precipitation technique prepared with different precipitants. Through this research, several parameters, such as the structural, functional, morphological, optical and electrical characteristics, were investigated by changing the precipitants. The functional group formation of pure CuO phase was confirmed by FT-IR studies. UV–Vis absorption measurements indicate that the band gap of the CuO nanoparticles was ranging from 2.40 to 2.85 eV. As a diode, CuO/p-Si exhibits a non-ideal behaviour and under light conditions with Na2CO3 precipitant, the better ideality factor is about 2.35. The barrier height is determined by the thermionic emission theory to be 0.77 and 0.79 eV in the dark and light conditions respectively.

Electric pulse-tuned piezotronic effect for interface engineering

Investigating interface engineering by piezoelectric, flexoelectric and ferroelectric polarizations in semiconductor devices is important for their applications in electronics, optoelectronics, catalysis and many more. The interface engineering by polarizations strongly depends on the property of interface barrier. However, the fixed value and uncontrollability of interface barrier once it is constructed limit the performance and application scenarios of interface engineering by polarizations. Here, we report a strategy of tuning piezotronic effect (interface barrier and transport controlled by piezoelectric polarization) reversibly and accurately by electric pulse. Our results show that for Ag/HfO2/n-ZnO piezotronic tunneling junction, the interface barrier height can be reversibly tuned as high as 168.11 meV by electric pulse, and the strain (0–1.34‰) modulated current range by piezotronic effect can be switched from 0–18 nA to 44–72 nA. Moreover, piezotronic modification on interface barrier tuned by electric pulse can be up to 148.81 meV under a strain of 1.34‰, which can totally switch the piezotronic performance of the electronics. This study provides opportunities to achieve reversible control of piezotronics, and extend them to a wider range of scenarios and be better suitable for micro/nano-electromechanical systems.

Strong hybridization of Nb2C with MoS2: a way to reduce contact resistance

The hybridization of MXene materials and transition metal dichalcogenides has a significant impact on heterojunction properties. The transport properties and electronic structure of heterojunctions of semiconducting MoS2 and metallic MXene Nb2C were studied by integrating density functional theory with non-equilibrium Green’s function theory. The hybridization between Nb2C and MoS2 makes the tunneling barrier between the two layers disappear, which can enhance the electron injection efficiency from the Nb2C to the MoS2. Moreover, the Nb2C/MoS2 heterojunction exhibits a conventional n-type Schottky contact with a barrier height of 0.14 eV, which is significantly lower than the barrier height of 0.29 eV at the Ti/MoS2 junction. These factors result in a field-effect transistor with a low contact resistance of 138 Ω·μm and a higher current of 1.09 mA μm−1 at a bias voltage of 0.3 V applied between the left and right electrodes. Following the application of gate voltage, the I on/I off ratio reaches 1266.

Effect of polarization on tunnelling electroresistance in ferroelectric tunnel junctions

High-quality epitaxial BiFeO3 (BFO) films were grown on (001)-, (110)- and (111)-oriented Nb:SrTiO3 (NSTO) substrates by pulsed laser deposition. The type of domain structure can be modulated using BFO ferroelectric films with different crystalline orientations. The ON/OFF ratios obtained in (001)-, (110)- and (111)-oriented Au/BFO/NSTO ferroelectric tunnel junctions (FTJs) are 6 × 103, 3 × 104 and 2 × 105, respectively. Analysis of the I–V curves of tunnelling current and average BFO ferroelectric barrier height proves that the polarization intensity of the BFO films modulates both the ferroelectric barrier and the Schottky barrier profile, which further influences the electronic tunnelling probability in BFO FTJs. This work will be useful for further study on achieving a giant ON/OFF ratio and developing insights into the barrier profile and transport mechanism of metal/ferroelectric/semiconductor-type FTJs.

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability.

Piezotronic effect utilizing strain-induced piezoelectric polarization to achieve interfacial engineering in semiconductor nanodevices exhibits great advantages in applications such as human-machine interfacing, micro/nanoelectromechanical systems, and next-generation sensors and transducers. However, it is a big challenge but highly desired to develop a highly sensitive piezotronic device based on piezoelectric semiconductor wafers and thus to push piezotronics toward wafer-scale applications. Here, we develop a bicrystal barrier-based piezotronic transistor for highly sensitive pressure sensing by p-GaN single-crystal wafers. Its pressure sensitivity can be as high as 19.83 meV/MPa, which is more than 15 times higher than previous bulk-material-based piezotronic transistors and reaches the level of nanomaterial-based piezotronic transistors. Moreover, it can respond to a very small strain of 3.3 × 10-6 to 1.1 × 10-5 with high gauge factors of 1.45 × 105 to 1.38 × 106, which is a very high value among various strain sensors. Additionally, it also exhibits high stability (current stability of 97.32 ± 2.05% and barrier height change stability of 95.85 ± 3.43%) and high linearity (R2 ∼ 0.997 ± 0.002) in pressure sensing. This work proves the possibility of designing a bicrystal barrier as the interface to obtain a strong piezotronic effect and highly sensitive piezotronic devices based on wafers, which contributes to their applications.

Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor.

With the demand for high-performance and miniaturized semiconductor devices continuously rising, the development of innovative tunneling transistors via efficient stacking methods using two-dimensional (2D) building blocks has paramount importance in the electronic industry. Hence, 2D semiconductors with atomically thin geometries hold significant promise for advancements in electronics. In this study, we introduced tunneling memtransistors with a thin-film heterostructure composed of 2D semiconducting MoS2 and WSe2. Devices with the dual function of tuning and memory operation were realized by the gate-regulated modulation of the barrier height at the heterojunction and manipulation of intrinsic defects within the exfoliated nanoflakes using solution processes. Further, our investigation revealed extensive edge defects and four distinct defect types, namely monoselenium vacancies, diselenium vacancies, tungsten vacancies, and tungsten adatoms, in the interior of electrochemically exfoliated WSe2 nanoflakes. Additionally, we constructed complementary metal-oxide semiconductor-based logic-in-memory devices with a small static power in the range of picowatts using the developed tunneling memtransistors, demonstrating a promising approach for next-generation low-power nanoelectronics.

Electroconductive and photoelectric properties of Pt/(100) β-Ga2O3 Schottky barrier diode based on Czochralski grown crystal

Pt/(100) β-Ga2O3 Schottky barrier diodes were fabricated using a plate cleaved from the crystal grown by Czochralski method. Their electroconductive and photoelectric characteristics were studied. The following values were obtained: the Schottky barrier height (1.69/1.62/1.74 eV), ideality coefficient (1.09/1.14), saturation current density (9.91 × 10–15 A/cm2), diode series resistance (7.98 kΩ), and net donor concentration [(1.8–2.4) × 1018 cm–3]. The diodes demonstrate a high rectification ratio of 1010 at an applied voltage of ± 1 V and a relatively low experimental value of the leakage current density ∼10–11 A/cm2. These structures are solar-blind and also capable of operating in self-powered mode. The diodes are highly sensitive to short-wave ultraviolet radiation with a wavelength λ ≤ 265 nm. The maximum values of responsivity (20.4 A/W), external quantum efficiency (1.2 × 104%), and detectivity (9.6 × 1015 Hz0.5 × cm × W–1) of diodes were registered under exposure to irradiation at λ = 210 nm and at applied voltage of −1 V. The responsivity and external quantum efficiency values in the self-powered operation mode were 12.3 A/W and 7.2 × 103%, respectively. The diodes showed low rise and decay times in self-powered operation mode for photodiode based on Ga2O3: 14 and 30 ms, respectively.

Exploring the spectroscopic and I‑V‑T characteristics advancements of cadmium zinc tungsten phosphate diode

This research accomplished the growth of cadmium zinc tungsten phosphate (CZWP) thin films on both glass and p-Si substrates, employing the sol–gel spin coating method. The sol–gel technique offers a versatile and controlled approach for fabricating nanomaterials with tailored properties. The structural and morphological analyses, conducted through XRD and FE-SEM, provided comprehensive insights into the nature of the films. The optical properties, absorbance behavior, energy gap, refractive indices, dielectric, conductivity, and electronegativity, underwent meticulous examination through UV–Vis spectroscopy. The X-ray diffraction analysis of the zinc cadmium tungsten phosphate diode reveals diffraction lines indicative of a nanostructure featuring a monoclinic-phase Zn2P2O7 and Cd3P6O28. Furthermore, SEM analysis confirms a nanoporous morphology with a nanograpes-like structure in the successful crystalline structure of the cadmium zinc tungsten phosphate nanostructure. The optical absorption studies, covering a wavelength range from 190 to 1500 nm, unveiled both direct and indirect energy band gaps, measuring 4.14 and 3.77 eV, respectively. A rigorous analysis of the I-V-T characteristics for the CZNP/p-Si junction in dark mode led to the identification of key parameters, including the transport ideality factor, barrier height, and series resistance.

Competing Reaction Mechanisms of Peptide Bond Formation in Water Revealed by Deep Potential Molecular Dynamics and Path Sampling.

The formation of an amide bond is an essential step in the synthesis of materials and drugs, and in the assembly of amino acids to form peptides. The mechanism of this reaction has been studied extensively, in particular to understand how it can be catalyzed, but a representation capable of explaining all the experimental data is still lacking. Numerical simulation should provide the necessary molecular description, but the solvent involvement poses a number of challenges. Here, we combine the efficiency and accuracy of neural network potential-based reactive molecular dynamics with the extensive and unbiased exploration of reaction pathways provided by transition path sampling. Using microsecond-scale simulations at the density functional theory level, we show that this method reveals the presence of two competing distinct mechanisms for peptide bond formation between alanine esters in aqueous solution. We describe how both reaction pathways, via a general base catalysis mechanism and via direct cleavage of the tetrahedral intermediate respectively, change with pH. This result contrasts with the conventional mechanism involving a single pathway in which only the barrier heights are affected by pH. We show that this new proposal involving two competing mechanisms is consistent with the experimental data, and we discuss the implications for peptide bond formation under prebiotic conditions and in the ribosome. Our work shows that integrating deep potential molecular dynamics with path sampling provides a powerful approach for exploring complex chemical mechanisms.

Improvement of Performance of CZTSSe Solar Cells by the Synergistic Effect of Back Contact Modification and Ag Doping.

To improve the performance of Cu2ZnSn(S,Se)4 solar cells, a strategy is proposed to improve the quality of absorber and back interface simultaneously by substituting V-doped Mo (Mo:V) for a conventional Mo back electrode and incorporating Ag into the Cu2ZnSn(S,Se)4 (ACZTSSe) absorber in this work. Since p+-type V-doped MoSe2 (MoSe2:V) is formed in the site between the absorber and Mo:V during selenization, the conventional Mo/n-MoSe2 back contact is modified to Mo:V/p+-MoSe2:V, a back surface passivation field (BSPF) is established at the back interface, the band bending of MoSe2:V is downward and that of bottom of the absorber is upward. Further investigation reveals that the back contact modification and Ag doping have a synergistic effect on inhibiting carrier recombination, decreasing series resistance and increasing shunt resistance, thereby leading to the PCE of device without antireflection coating increased from 8.61 to 10.98%, which is larger than the sum of increase in PCE induced by Ag doping alone (8.61 to 9.66%) and back contact modification alone (8.61 to 9.63%). It is demonstrated that the synergistic effect stems mainly from the strengthened BSPF and the further reduced back contact barrier height. The former is due to the increased difference in work function (WF) between MoSe2:V and absorber induced by the reduced WF of the absorber after Ag doping and the raised WF of MoSe2:V after V doping. The latter is due to the downshifted valence band maximum of absorber after Ag doping. This work highlights the synergistic effect of back contact modification and Ag doping on improving the performance of CZTSSe solar cells and also provides an effective way to suppress carrier recombination.