In this paper, the influence of antimony concentration and different sintering techniques on the structural, microstructural, and electrical properties of antimony-doped barium stannate, BaSn1-xSbxO3 (BSSO, x = 0.00, 0.04, 0.06, 0.08 and 0.10) was investigated. BSSO-based ceramic samples were obtained by conventional and spark plasma sintering. The XRD analysis confirmed the single-phase, cubic BaSnO3 lattice system in all conventionally sintered samples. Apart from the dominant cubic phase, the spark plasma sintering conditions led to the formation of a secondary phase, Ba2SnO4, in all samples. FESEM analysis revealed the presence of low angle grain boundaries (LAGBs) in BSSO samples with high antimony concentration (x = 0.08), independently of the sintering technique. However, the fraction of LAGBs is significantly higher in the BaSn0.92Sb0.08O3-SPS sample due to the simultaneous exposure of the conductive sample to the effects of high temperature and pressure during sintering process. These boundaries have low activation energy and allow free charge carrier transport through the grain boundary region. The high dopant concentration and the presence of large fraction of LAGBs in BaSn0.92Sb0.08O3-SPS sample reflected on its electrical properties through low and almost temperature-independent electrical resistivity in the temperature range of 25–150 °C.
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