Design Of Bandgap Reference Research Articles

A low power and low noise bandgap reference design

A low power and low noise bandgap reference design

Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process

This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit — the rest of the circuit is entirely designed with Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.

A constrained optimization approach for accurate and area efficient bandgap reference design

In this paper, a constrained optimization approach for the design of bandgap reference (BGR) circuits that meet a given voltage inaccuracy specification while minimizing area is presented. Device matching properties and error propagation analysis are carried out such that the desired performance can be achieved by the optimization algorithm. The BGR occupies 0.097mm2 in a 0.35μm CMOS process. Experimental results verified the effectiveness of the optimization algorithm by producing a voltage reference of 1.220V, with a relative inaccuracy (3σ/μ) of 0.65% at 27°C and TC=13.7ppm/°C in the range of −10°C to 125°C, for all 40 fabricated samples, without trimming. Also shown in the paper and verified experimentally, a 3-fold reduction in inaccuracy, to 0.20% at 27°C, can further be obtained, if needed, by a simple one-temperature four-bit trimming.

The Design of Bandgap Reference Based on Empyrean Aether Software

A high-performance bandgap reference voltage source design method is proposed in this paper, according to the shortcomings of traditional bandgap reference voltage source. This method combined CSMC 0.35μm CMOS process with Aether software technology, enabling to improve the bandgap reference source op amp performance and take into account accuracy and stability of the system. From the experimental results: this bandgap reference voltage source output voltage has changed about 63 mV when the temperature varied from to , and the line regulator is 0.4mV/V when the power supply voltage varied from 3.2V to 3.3V. This system has advantages of high accuracy and good stability.

A New Design of CMOS Bandgap Reference Based on Genetic Algorithm

A new CMOS bandgap reference which is optimized by adaptive GA(genetic algorithm) is presented in this paper. During the optimization of the parameters, according to the different specifications, the idea which looks on secondary targets as the boundary restrictions is proposed, so that the problem of multi-objective normalization is solved. The secondary optimizing method about coarse adjusting initially, meticulous adjusting successively is proposed in the optimization based on adaptive Genetic Algorithm. The simulation results which have reached the leading standard of industry indicate the advantage and validity of the method comparing with other method used in the design of bandgap references.

A Wide Temperature, Radiation Tolerant, CMOS-Compatible Precision Voltage Reference<newline/>for Extreme Radiation Environment <newline/>Instrumentation Systems

Many design techniques have been incorporated into modern CMOS design practices to improve radiation tolerance of integrated circuits. Annular-gate NMOS structures have been proven to be significantly more radiation tolerant than the standard, straight-gate variety. Many circuits can be designed using the annular-gate NMOS and the inherently radiation tolerant PMOS. Bandgap reference circuits, however, typically require p-n junction diodes. These p-n junction diodes are the dominating factor in radiation degradation in bandgap reference circuits. This paper proposes a different approach to bandgap reference design to alleviate the radiation susceptibility presented by the p-n junction diodes.

Bandgap Reference Optimisation from On-Chip E G , X TI Value Extraction

The temperature dependence of the IC(VBE) relationship can be characterised by two parameters: EG and XTI. They are usually obtained from measured VBE(T) values, using least square algorithm at a constant collector current. This method involves an accurate measurement of VBE and of the operating temperature. A new configurable test structure dedicated to their extraction is presented in this paper. It allows a direct measurement of the die temperature and consequently an accurate measurement of VBE(T). This new technique is implemented on a ST-Microelectronics BiCMOS process. Resulting experimental data are analysed and discussed. An improvement of the bandgap reference design is presented.

An integratable second-order compensated bandgap reference for 1V supply

A new systematic approach is used for the design of bandgap references. A linear combination of two base-emitter voltages is taken to compensate implicitly for the temperature behavior of these base-emitter voltages. To reach optimum circuit performance with respect to accuracy and power, systematic design procedures are used. The realized bandgap reference circuit is completely integratable and operates from a supply voltage of only 1V. The output voltage is approximately 194 mV and has an average temperature dependency of 1.5ppm/oC in the range of 0oC to 100oC. The circuit has been realized in a bipolar process with f t ≥ 5 GHz. The total amount of capacitance is approximately 150 pF and the current consumption is about 100 µA.

A V/SUB be/(T) model with application to bandgap reference design

The authors discuss a new model for the V/SUB be/(T) characteristics of a bipolar transistor. A curvature-compensated bandgap voltage reference scheme based on this model is described. A CMOS circuit configuration to implement the compensation scheme is proposed. It may be suitable for such uses as high-resolution monolithic data acquisition.