Band Gap Of Layers Research Articles

Device optimization of all-perovskite triple-junction solar cells for realistic irradiation conditions

All-perovskite two-terminal tandem solar cells, comprising two or more junctions, offer high power conversion efficiencies (PCEs) that exceed the limits of single-junction photovoltaics. Realizing high-efficiency SCs requires carefully optimizing the photoactive layer, front electrodes, and functional layers. Here, we first aim to determine the optimal device architecture, i.e., the perovskites bandgaps and optimum layer thicknesses, for standard test conditions (STCs). We then optimize the energy yield (EY) under realistic outdoor conditions (ROCs), i.e., the overall electrical energy to be expected in one year at a specific location. In the first step, we reference our simulation with two terminal all-perovskite triple-junction SCs (2T3J-PSCs) to previously experimentally realized PSC with a PCE of 20.1% as a benchmark to derive the underlying diode parameters and use our in-house energy yield code combined with a hybrid particle swarm optimization and gravitational search algorithm (PSOGSA) to find the optimal bandgap combination and perovskite layer thicknesses. The optimized SCs with the optimal bandgap combination offer a PCE of 25.1% with a current density of 10.1 mA/cm2. Furthermore, the effect of the other functional layers, such as transparent conductive oxide (TCO), hole transport layer (HTL), and recombination junctions (RJs), is also investigated to enhance the cell performance further. The SCs with optimized layers exhibit improved parameters: PCE of 27.1%, with a relative improvement of 34.8% in the PCE compared with the fabricated cell, and a high current matching a of 10.8 mA/cm2. The numerical results showed that the reported cell can potentially achieve a PCE of 36% at an eVoc/EG ratio of 0.72. However, the optimal parameters may vary in real-world operating conditions due to variations in temperature, humidity, and light exposure. As a result, the optimal energy yield (EY) parameters may differ. Therefore, the energy yield optimizing process is also carried out by considering ROCs in Phoenix, AZ, USA, to find the best parameters under these conditions. We found that the optimum top layer bandgap under ROCs is lower than under STCs due to a bluer, more shifted spectrum in ROCs. After that, the optimized cell under ROCs is tested in several locations exhibiting different climatic conditions (Seattle, Honolulu, Los Angeles, Miami, and Milwaukee). The numerical results show that the optimized cell under ROCs offers an increase in energy yield in several locations compared to conventional single-junction crystalline Si-SCs (PCE = 23.6%) with a high energy yield of 648.2 kWh/m2 in Phoenix, with an improvement of 39.9% in the EY compared to the Si-SC counterpart. Our results provide design guidelines for fabricating a highly efficient triple-junction perovskite SC in the lab and outdoor applications and improve the efficiency of 2T3J-PSCs beyond the 30% limit.

Numerical optimization of inorganic p-Sb2Se3/n-ZrS2 heterojunction solar cells: achieving high efficiency through SCAPS-1D simulation

p-Sb2Se3 and n-ZrS2 materials show strong potential for cost-effective photovoltaic applications. This study presents a detailed numerical analysis of p-Sb2Se3/n-ZrS2 heterojunction solar cells using SCAPS-1D, focusing on how key parameters such as layer thickness, doping density, and bandgap have affected device performance. Critical photovoltaic metrics, such as built-in voltage (Vbi), carrier lifetime, depletion width (Wd), recombination rates, and photogenerated current, were examined. Our findings demonstrate that optimizing the p-Sb2Se3 absorber layer with a 1.0 eV bandgap, 5000 nm thickness, and doping density of 1020 cm−3 leads to a maximum efficiency of 32.14%, with a fill factor (FF) of 84.57%, short-circuit current density (Jsc) of 47.61 mA cm−2, and open-circuit voltage (Voc) of 0.792 V. For the ZrS2 buffer layer, the best performance was achieved with a 1.2 eV bandgap, 200 nm thickness, and doping density below 1 × 1020 cm−3. These optimized parameters significantly enhanced carrier separation and minimized recombination losses, leading to improved power conversion efficiency. In addition to theoretical optimization, this study emphasizes the practical potential of these materials for real-world applications. The combination of Sb2Se3 and ZrS2 offers a low-cost fabrication process suitable for scalable commercial solar cell production while maintaining high efficiency. These results underscore the viability of p-Sb2Se3/n-ZrS2 heterojunctions as promising candidates for next-generation clean energy solutions.

In situ seed layer bandgap engineering leading to the conduction band offset reversion and efficient Sb2Se3 solar cells with high open-circuit voltage

Sb2Se3 solar cells have achieved a power conversion efficiency (PCE) of over 10%. However, the serious open-circuit voltage deficit (VOC-deficit), induced by the hard-to-control crystal orientation and heterojunction interface reaction, limits the PCE of vapor transport deposition (VTD) processed Sb2Se3 solar cells. To overcome the VOC-deficit problem of VTD processed Sb2Se3 solar cells, herein, an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3 seed layer (WBSL) at CdS/Sb2Se3 heterojunction interface to improve the PCE of Sb2Se3 solar cells. The analysis results show that the introduced Sb2(S,Se)3 seed layer can enhance the [001] orientation of Sb2Se3 thin films, broaden the band gap of heterojunction interface, and realize a “Spike-like” conduction band alignment with ΔEc = 0.11 eV. In addition, thanks to the suppressed CdS/Sb2Se3 interface reaction after WBSL application, the depletion region width of Sb2Se3 solar cells is widened, and the quality of CdS/Sb2Se3 interface and the carrier transporting performance of Sb2Se3 solar cells are significantly improved as well. Moreover, the harmful Se vacancy defects near the front interface of Sb2Se3 solar cells can be greatly diminished by WBSL. Finally, the PCE of Sb2Se3 solar cells is improved from 7.0% to 7.6%; meanwhile the VOC is increased to 466 mV which is the highest value for the VTD derived Sb2Se3 solar cells. This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.

Metamaterial-based Nano-Antenna Design of Enhanced Plasmonic Electromagnetic Properties

This work, presents a design of a nano-antenna based plasmonic materials at the frequency range from 192THz to 195THz for modern applications, including THz communication systems. The proposed antenna is constructed from the 3rd iteration of the Hilbert curve patch fed with a modified coplanar 50Ω port. The back layer of the antenna was covered with a partial ground plane defective with a metamaterial-based electromagnetic band gap (EBG) layer. The antenna shows high directivity up to 68dBi at 193.4THz with an excellent matching over the entire frequency band of interest. The proposed antenna is considered of gold conductive layer mounted on a silicon dioxide (SiO2) layer. The proposed EBG was designed as the second order of the Minkowski fractal geometry. The obtained results in terms of S11 were below -10dB for the frequency band of 3THz. These results were validated using numerical techniques based on CST MWS by invoking the time domain (TD) and frequency domain (FD) solvers. The results achieved from the considered techniques agreed very well with each other.

Device Simulation of 25.9% Efficient ZnOxNy${\rm ZnO}_x{\rm N}_y$/Si Tandem Solar Cell

AbstractThe novel, high electron mobility material has been investigated theoretically as an absorber in a two‐terminal tandem solar cell. In addition to its high mobility, can attain sufficiently low carrier concentration to enable ‐junctions, and has a tunable bandgap around the 1.7 eV range. It is therefore suitable for pairing with a Si‐based bottom cell. In addition to the layer, the tandem cell consists of a emitter and a Si heterojunction bottom cell. A buffer layer is introduced between the emitter and absorber in the top cell to mediate a large valence band offset that resulted in a poor fill factor, . A buffer layer bandgap of 1.5 eV gave the highest power conversion efficiency (PCE). The objective is to estimate the optimal performance of in a tandem solar cell. The dependence of current–voltage (–) characteristics on thickness, mobility and carrier concentration in the layer is evaluated, and found to yield maximum performance with 0.35 , 250 Vs–1 and , respectively. Using these conditions, the – parameters of the device under AM1.5 illumination are short circuit current density, mA , open circuit voltage, V, and . With this, it is reported on, to the best of the knowledge, the first device simulation based on .

A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices.

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiOx:H and hydrogenated amorphous silicon oxide (a-SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

Microwave-assisted synthesis of electrode materials for LIBs: MoS2/rGO heterostructures

The incomplete reduction of graphene oxide (GO) yields reduced graphene oxide (rGO), characterized by a zero band gap and intrinsic layer stacking, thus constraining its practical utility across diverse domains. Fortunately, this challenge can be effectively addressed by employing a suitable substrate for the fabrication of MoS2/rGO heterostructures. Nanocomposites of MoS2/reduced graphene oxide (MoS2/rGO-700W and MoS2/rGO-560W) were synthesized using MoS2 and GO solutions as starting materials through microwave-assisted synthesis with microwave power treatments of 700W and 560W, respectively. Structural characterization results reveal that the particle size of MoS2 within the composites is notably smaller compared to that of pure MoS2. The MoS2/rGO-700W composite demonstrates a more homogeneous dispersion of MoS2 and features a well-developed hierarchical porous structure with increased pore volume and specific surface area. The MoS2/rGO-700W composite demonstrates elevated ID/IG ratio, C/O ratio and C = C peak area, suggesting that increased microwave power enhances the removal of oxygen-containing groups from rGO. This process significantly restores the extended conjugated structure of graphene, thereby offering enhanced conductivity at the MoS2 interface. Furthermore, the proposed strategy holds considerable theoretical value and provides significant insights for the development process of novel MoS2-based composite electrode materials.

Tailored grading profiles for enhanced performance in Dion-Jacobson perovskite solar cells with MXene contacts

2D-perovskite has attracted notable interest for its ability to address the stability challenges related to traditional 3D-perovskite. Using proper contacts for 2D-perovskites is crucial to effectively eliminate pinhole creation and collect carriers. Therefore, in this study, MXene contacts have been employed with 2D-DJ-perovskite (DJP) solar cells to combine both benefits, resulting in enhanced stability, superior charge transport, and tunable energy levels without pinhole effects. Further, to improve efficiency and mitigate transmission-thermalization losses, this work also harnesses the remarkable tunable bandgap property of the DJ-P. The DJ-P layer's bandgap is adjusted by modifying its composition in this work. This is achieved by varying the number of inorganic layers (n) within the (PeDA)(MA)n-1PbnI3n+1, perovskite structure, ranging from 1 to 6 across the thickness of the DJ-P layer. Linear, parabolic, beta, and power law-grading profiles are employed in the DJP solar cell to determine the optimal composition for the DJ-P layer. The results demonstrate that power law grading yields the highest efficiency, reaching a maximum of 17.47 % with 1.05 V VOC.

2D Dion Jacobson/3D perovskite heterojunction solar cells without hole transport layer: Further optimize the performance by SCAPS-1D

The global energy demand is steadily increasing, prompting a widespread focus on renewable energy sources such as solar, wind, hydro, and biomass. Perovskite solar cells (PSCs) have gained considerable attention due to their remarkably high power conversion efficiency (PCE). The Dion-Jacobson (DJ) type two-dimensional layered perovskite material, lacking interlayer van der Waals interaction, enhances device stability significantly. Simultaneously, the heterojunction structure formed by MAPbI3 improves power conversion efficiency (PCE) while maintaining high stability. This study employs 2D Dion Jacobson/3D perovskite heterojunction solar cells for further optimization through simulation analysis using SCAPS-1D (Solar Cells capacitance simulator). The intrinsic impact of heterojunction perovskite solar cells is identified, and appropriate physical parameters are adjusted to approximate experimental results. Optimization variables include absorption layer thickness, absorption layer band gap, interface defect layer thickness, back contact material, and electron transport layer material, all influencing device performance differently. Determining the ideal absorption layer thickness based on absorption characteristics, a hole-free transport layer structure is adopted in this work to reduce production costs and process complexity. To enhance the responsiveness of DJ type two-dimensional layered perovskite materials to various light wavelengths and improve PCE, the simulation employs 3D graphics to optimize variables such as the absorption layer's band gap. The highest PCE achieved is 27.42 %. Additionally, the study explores device performance in a low-temperature operating environment (265 ∼ 325 K). At 265 K, the PCE and fill factor (FF) are 29.37 % and 85.45 %, respectively, indicating that 2D Dion Jacobson/3D perovskite heterojunction solar cells exhibit structural stability and high efficiency at low temperatures compared to other PSCs. These findings suggest promising practical applications in the fields of photovoltaics and optoelectronics.

Photoinduced dynamics during electronic transfer from narrow to wide bandgap layers in one-dimensional heterostructured materials

Electron transfer is a fundamental energy conversion process widely present in synthetic, industrial, and natural systems. Understanding the electron transfer process is important to exploit the uniqueness of the low-dimensional van der Waals (vdW) heterostructures because interlayer electron transfer produces the function of this class of material. Here, we show the occurrence of an electron transfer process in one-dimensional layer-stacking of carbon nanotubes (CNTs) and boron nitride nanotubes (BNNTs). This observation makes use of femtosecond broadband optical spectroscopy, ultrafast time-resolved electron diffraction, and first-principles theoretical calculations. These results reveal that near-ultraviolet photoexcitation induces an electron transfer from the conduction bands of CNT to BNNT layers via electronic decay channels. This physical process subsequently generates radial phonons in the one-dimensional vdW heterostructure material. The gathered insights unveil the fundamentals physics of interfacial interactions in low dimensional vdW heterostructures and their photoinduced dynamics, pushing their limits for photoactive multifunctional applications.

Numerical Optimization of Thickness and Optical Band Gap of Absorber and Buffer Layers in Earth-Abundant Cu2ZnSnS4 Thin-Film Solar Cells

Numerical Optimization of Thickness and Optical Band Gap of Absorber and Buffer Layers in Earth-Abundant Cu2ZnSnS4 Thin-Film Solar Cells

Numerical simulation based performance enhancement approach for an inorganic BaZrS3/CuO heterojunction solar cell

One of the main components of the worldwide transition to sustainable energy is solar cells, usually referred to as photovoltaics. By converting sunlight into power, they lessen their reliance on fossil fuels and the release of greenhouse gases. Because solar cells are decentralized, distributed energy systems may be developed, which increases the efficiency of the cells. Chalcogenide perovskites have drawn interest due to their potential in solar energy conversion since they provide distinctive optoelectronic characteristics and stability. But high temperatures and lengthy reaction periods make it difficult to synthesise and process them. Therefore, we present the inaugural numerical simulation using SCAPS-1D for emerging inorganic BaZrS3/CuO heterojunction solar cells. This study delves into the behaviour of diverse parameters in photovoltaic devices, encompassing efficiency (η) values, short-circuit current density (Jsc), fill factor (FF), and open-circuit voltage (Voc). Additionally, we thoroughly examine the impact of window and absorber layer thickness, carrier concentration, and bandgap on the fundamental characteristics of solar cells. Our findings showcase the attainment of the highest efficiency (η) values, reaching 27.3% for our modelled devices, accompanied by Jsc values of 40.5 mA/cm2, Voc value of 0.79 V, and FF value of 85.2. The efficiency (η) values are chiefly influenced by the combined effects of Voc, Jsc, and FF values. This optimal efficiency was achieved with CuO thickness, band gap, and carrier concentration set at 5 µm, 1.05 eV, and above 1019 cm−3, respectively. In comparison, the optimal parameters for BaZrS3 include a thickness of 1 µm, a carrier concentration below 1020 cm−3, and a band gap less than 1.6 eV. Therefore, in the near future, the present simulation will simultaneously provide up an entirely novel field for the less defective perovskite solar cell.

Design and parametric optimization of lead free perovskite based tandem solar cell for higher efficiency

A critical concern is the creation of effective and eco-friendly photovoltaic materials. The non-toxic perovskite substance methyl ammonium germanium tri-iodide (MAGeI3) has several applications in tandem solar cells. In this research, the efficiency of a multi-junction tandem solar cell with MAGeI3 as the absorbent layer in the top cell and FeSi2 as the absorbent layer in the bottom cell was examined by a thorough simulation utilising SCAPS-1D software. The simulation took into account several variables, including the thickness, energy level, bandgap, and carrier concentration of the various layers. According to the simulation’s findings, the efficiency is 27.25% and the fill factor (FF) is around 80%. MAGeI3 is a safe and effective substitute material compared to other lead-containing perovskite materials. This work emphasises the potential of (MAGeI3) as a productive and eco-friendly component for tandem solar cells.

Numerical simulation and performance optimization of all-inorganic CsGeI3 perovskite solar cells with stacked ETLs/C60 by SCAPS device simulation

Perovskite solar cells, particularly those featuring CsGeI3 as the absorption layer, are distinguished by their non-toxicity and inherent stability. In this work, to optimize the interface contact of the cells, enhance their built-in electric field, and consequently augment the power conversion efficiency, a C60 layer was incorporated into the electronic transport layer. This incorporation led to the formation of a novel dual-electron transport layer structure. Employing SCAPS-1D simulation software, a range of electron and hole transport layer combinations was explored. The optimal configuration was determined to be FTO/SnO2/C60/IDL1/CsGeI3/IDL2/Cu2O/Au. The absorption layer's thickness, doping concentration, defect density, and bandgap were optimized. Furthermore, an investigation was conducted on the performance implications arising from alterations in the dual electron conduction layer SnO2/C60's thickness, bandgap, and doping concentration. Concurrently, adjustments were made to refine the defect density in the interface defect layer, and an investigation was carried out to determine the optimal operational temperature. These endeavors culminated in the achievement of an impressive 30.34% optimal power conversion efficiency, representing a significant 54.25% enhancement over the pre-optimization efficiency of 19.67%. This work stands as a valuable reference for subsequent investigations into the dual electron transport layer structure in Ge-based perovskite solar cells.

Regulating SnZn defects and optimizing bandgap in the Cu2ZnSn(S,Se)4 absorption layer by Ge gradient doping for efficient kesterite solar cells

In recent years, the primary reasons for low efficiency Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have been attributed to SnZn defects and related defect clusters, as well as the balance of absorption layer bandgap for short-circuit current density (Jsc) and open-circuit voltage (Voc). Ge gradient has been theoretically proven to be an effective strategy to change traditional flat bandgap structure and suppress SnZn defects and related defect clusters for improving the device performance of CZTSSe solar cells. However, the potential of Ge gradient has not been fully verified. In this work, Ge doping effectively reduces the formation of SnZn defects and [2CuZn + SnZn] defect clusters in the CZTSSe absorption layer. In addition, it can be found that the construction of the V-type bandgap is the best solution for balancing between Voc and Jsc. By using the bandgap grading strategy, the disparity between the recombination barrier of the junction and the optical bandgap's minimum value is widened, thereby obtaining a large Voc. The V-type doped device has the highest efficiency when Voc is 0.45 V, which can reach 8.03%. This Ge graded substitution method provides an alternative absorption layer structure for improving Voc and the preparation of future high-efficiency kesterite photovoltaic devices.

Simulation study of Perovskite/Si Monolithic Multijunction Solar Cell

The utilization of perovskite and crystalline-silicon (c-Si) light absorbers in multijunction solar cells presents an exciting opportunity to surpass the efficiency limit of the industry's leading single-junction c-Si solar cells. In this work, we used the Solar Cell Capacitance Simulator (SCAPS-1D) to simulate a monolithic tandem junction solar cell. The solar cell consists of two types of materials: low bandgap and high bandgap. These are layers of perovskites and Si, divided by a window layer of zinc oxide (ZnO), a buffer layer of cadmium sulfide (CdS), a recombination layer of Spiro-MeOTAD/silicon, and a heavily doped back surface field layer formed from n++Si to prevent recombination at the back surface. The impact of di fferent series and shunt resistances, as well as perovskite layer thickness and bandgap, on solar cells' photovoltaic performance has been investigated.

Theoretical study of piezoelectric and light absorption properties, and carrier mobilities of Janus TiPX (X = F, Cl, and Br) monolayers.

Janus TiPX (X = F, Cl, and Br) monolayers were systematically investigated through first-principles calculations. The Janus TiPX monolayers exhibit mechanical and dynamic stability. Two monolayers are indirect bandgap semiconductors, except the TiPBr monolayer, which has the features of a quasi-direct bandgap semiconductor. Biaxial strain can modify the band gap of single layers. The Janus TiPX monolayers have remarkable flexibility and piezoelectric properties. In particular, the TiPF monolayer shows high horizontal (44.18 pm V-1) and vertical piezoelectric coefficients (-3.59 pm V-1). These values exceed those of conventional bulk materials, like GaN (3.1 pm V-1) and α-quartz (2.3 pm V-1). All of the monolayers have absorption coefficients of 105 cm-1 for visible and ultraviolet (UV) light, which are one order of magnitude greater than that of MoSSe. Furthermore, TiPX monolayers have high carrier mobility. Janus TiPX monolayers represent a class of two-dimensional (2D) materials with exceptional properties and multifunctionality, holding significant promise for various applications in piezoelectric sensors, solar cells, and nano-electronic devices.

Utilizing machine learning to enhance performance of thin-film solar cells based on Sb2(S x Se1-x )3: investigating the influence of material properties.

Antimony chalcogenides (Sb2(S x Se1-x )3) have drawn attention as a potential semiconducting substance for heterojunction photovoltaic (PV) devices due to the remarkable optoelectronic properties and wide range of bandgaps spanning from 1.1 to 1.7 eV. In this investigation, SCAPS-1D simulation software is employed to design an earth abundant, non-toxic, and cost-effective antimony sulfide-selenide (Sb2(S,Se)3)-based thin-film solar cell (TFSC), where tungsten disulfide (WS2) and cuprous oxide (Cu2O) are used as an electron transport layer (ETL) and hole transport layer (HTL), respectively. The PV performance parameters such as power conversion efficiency, open-circuit voltage (V oc), short-circuit current (J sc), and fill factor (FF) are assessed through adjustments in material properties including thickness, acceptor concentration, bulk defect density of the absorber, defect state of absorber/ETL and HTL/absorber interfaces, operating temperature, work function of the rear electrode, and cell resistances. This analysis aims to validate their collective impact on the overall efficiency of the designed Ni/Cu2O/Sb2(S,Se)3/WS2/FTO/Al TFSC. The optimized physical parameters for the Sb2(S,Se)3 TFSC lead to impressive PV outputs with an efficiency of 30.18%, V oc of 1.02 V, J sc of 33.65 mA cm-2, and FF of 87.59%. Furthermore, an artificial neural network (ANN) machine learning (ML) algorithm predicts the optimal PCE by considering five semiconductor parameters: absorber layer thickness, bandgap, electron affinity, electron mobility, and hole mobility. This model, which has an approximate correlation coefficient (R 2) of 0.999, is able to predict the data with precision. This numerical analysis provides valuable data for the fabrication of an environmentally friendly, economical, and incredibly non-toxic efficient heterojunction TFSC.

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

In this study, secondary ion mass spectrometry and a semiconductor parameter analyzer were used to study and analyze the component interdiffusion at the CdTe/HgCdTe interface before and after annealing, as well as the effect of the formation of a gradient bandgap layer from annealing on the electrical properties of the metal–insulator-semiconductor (MIS) structure. The site-direction relationship of the contracted crystals at the CdTe/HgCdTe interface was revealed by transmission electron microscopy, and it was found that the stacking dislocations in the CdTe layer were significantly reduced after annealing and that the Hg atoms diffused into the CdTe layer through the high-temperature annealing and occupied the lattice positions of the Cd atoms, thus forming the HgCdTe structure, which formed a contracted-crystalline structure with the CdTe substrate. Molecular dynamics was applied to simulate the specific atomic diffusion behavior at different temperatures and different times during the high temperature annealing process, and the above experimental results were verified by a research note on the variation of the diffusion phenomena during the process.

Over 35% efficiency of three absorber layers of perovskite solar cells using SCAPS 1-D

Perovskite solar cells (PSCs) have drawn significant scientific interest due to their promising combination of high power conversion efficiency and cost-effectiveness. This study focuses on optimizing the power conversion efficiency (PCE) of PSCs by employing absorber layers comprising CH3NH3SnI3 and FASnI3. The Solar Cell Capacitance Simulator (SCAPS) is used to investigate various parameters, including layer thickness, defect densities (Nt), bandgap values, and temperature. The most efficient configuration is found with 390 nm layer thickness, Nt at 2E13 cm3, and optimized bandgap values. The study reveals impressive electrical parameters, including an open-circuit voltage (Voc) of 1.23 V, short-circuit current density (Jsc) of 33.43 mA/cm2, a high fill factor (FF) at 88.64%, and a substantial PCE of 35.73%. These findings underscore the potential for achieving superior PSC efficiency through parameter optimization. The utilization of CH3NH3SnI3 and FASnI3 absorber layers holds great promise for enhancing PSC performance. This research provides valuable insights into optimizing PSCs, offering implications for the advancement of cost-effective and efficient photovoltaic technologies.