Abstract Several M n+1 X n O2 compounds exhibit work functions higher than those of three-dimensional metals, enabling the formation of Ohmic contact heterostructures with MoS2, which enhances the catalytic activity of MoS2 for the hydrogen evolution reaction. However, the Schottky barrier height (SBH) in these Ohmic contact heterostructures does not adhere to the Schottky-Mott limit, leaving the Ohmic contact mechanism between MoS2 and M n+ 1X n O2 unclear and hindering further investigations into these heterostructures. In this study, we investigate 22 MoS2/M n+ 1X n O2 heterostructures using the unfolding method. Among these, the eight M n+ 1X n O2 compounds—Cr2CO2, Mo2CO2, V2CO2, W2CO2, Cr2NO2, V2NO2, Ti3C2O2 and V4C3O2—form p-type Ohmic contacts with MoS2. In contrast, the twelve compounds—Hf2CO2, Nb2CO2, Ta2CO2, Ti2CO2, Zr2CO2, Mo2NO2, Ti2NO2, Ti3N2O2, Zr3C2O2, Nb4C3O2, Ta4C3O2 and Ti4N3O2—create p-type Schottky contacts, while Hf2NO2 and Zr2NO2 form n-type Schottky contacts with MoS2. In the Ohmic contact heterostructures, out-of-plane orbital states hybridize to form a splitting band, allowing the highest valence band of MoS2 to cross the Fermi level and achieve hole doping. This splitting band not only results in a SBH that does not conform to the Schottky–Mott limit but also redistributes charge density. Notably, the heterostructures formed by Cr2CO2, Mo2CO2, V2CO2, W2CO2, Cr2NO2, V2NO2, V4C3O2, and MoS2 exhibit charge polarity distribution, whereas MoS2/Ti3C2O2 does not demonstrate charge polarity distribution.
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