Recently, CuSbTe2, one of the I-V-VI-based compounds, has received attention as a promising thermoelectric (TE) material that exhibits a narrow bandgap with high electrical conductivity. In this study, the evolution of electrical and thermal transport properties of CuSbTe2 by heavy Se doping was investigated by synthesizing a series of CuSb(Te1-xSex)2 (x = 0, 0.1, 0.2, 0.3, and 0.4) compositions. The high electrical conductivity of CuSbTe2 (5400 S/cm) is gradually decreased to 1800 S/cm by Se doping with x = 0.4 at 300K with decreased carrier concentration and mobility. Due to this large reduction in electrical conductivity, the power factor of pristine CuSbTe2 significantly decreased to 0.98 mW/mK2 for x = 0.4 by 25%, along with reduced density-of-states effective mass at 550K. Nevertheless, the lattice thermal conductivity was reduced by 5%, and the electrical thermal conductivity was significantly reduced by 67% for x = 0.4 at 550K. Consequently, the total thermal conductivity of pristine CuSbTe2 (2.76 W/mK) is significantly reduced to 1.65 W/mK for x = 0.4 by 40%, mainly owing to the significant reduction of electrical thermal conductivity, which originates from the reduced electrical conductivity. Therefore, an enhanced TE figure of merit (zT) of 0.33 at 550K is observed for CuSb(Te0.6Se0.4)2 (x = 0.4), which was 26% higher than that of CuSbTe2. In addition, the expected zT for various carrier concentrations is calculated by using a single parabolic band model. It was found that the zT could be further enhanced by reducing the carrier concentration, which can be achieved by further doping of electrons.
Read full abstract