Ballistic Transport Research Articles

Ballistic transport enhanced heat convection at nanoscale hotspots

Along with device miniaturization, severe heat accumulation at unexpected nanoscale hotspots attracts wide attentions and urges efficient thermal management. Heat convection is one of the important heat dissipating paths at nanoscale hotspots but its mechanism is still unclear. Here shows the first experimental investigation of the convective heat transfer coefficient at size-controllable nanoscale hotspots. A specially designed structure of a single-layer graphene supported by gold-nanorod array is proposed, in which the gold nanorods generate hundreds of nanometers heating sources under laser irradiation and the graphene layer works as a temperature probe in Raman thermometry. The determined convective heat transfer coefficient (1928+155 −147 W m−2 K−1 for the 330 nm hotspot and 1793+157 −159 W m−2 K−1 for the 240 nm hotspot) is about three orders of magnitude higher than that of nature convection, when the simultaneous interfacial heat conduction and radiation are carefully evaluated. Heat convection, thus, accounts to more than half of the total energy transferred across the graphene/gold nanorods interface. Both the plasmon induced nanoscale hotspots and ballistic convection of air molecules contribute to the enhanced heat convection. This work reveals the importance of heat convection at nanoscale hotspots to the accurate thermal design of miniaturized electronics and further offers a new way to evaluate the convective heat transfer coefficient at nanoscale hotspots.

Impact of valley degeneracy on the thermoelectric properties of zig-zag graphene nanoribbons with staggered sublattice potentials and transverse electric fields.

This study investigates the band inversion of flat bands in zig-zag graphene nanoribbons (ZGNRs) using a tight-binding model. The band inversion results from symmetry breaking in the transverse direction, achievable through deposition on specific substrates such as separated silicon carbide or hexagonal boron nitride sheets. Upon band inversion, ZGNRs exhibit electronic structures characterized by valley degeneracy and band gap properties, which can be modulated by transverse electric fields. To explore the impact of this level degeneracy on thermoelectric properties, we employ Green's function techniques to calculate thermoelectric quantities in ZGNR segments with staggered sublattice potentials and transverse electric fields. Two carrier transport scenarios are considered: the chemical potential is positioned above and below the highest occupied molecular orbital. We analyze thermionic-assisted transport (TAT) and direct ballistic transport (DBT). Level degeneracy enhances the electric power factors of ZGNRs by increasing electrical conductance, while the Seebeck coefficient remains robust in the TAT scenario. Conversely, in DBT, the enhancement of the power factor primarily stems from improvements in the Seebeck coefficient at elevated temperatures.

What is ballistic transport?

In this article, we review some notions of ballistic transport from the mathematics and physics literature, describe their basic interrelations, and contrast them with other commonly studied notions of wave packet spread.

Non-Classical Heat Transfer and Recent Progress

Abstract Heat transfer in solids has traditionally been described by Fourier's law, which assumes local equilibrium and a diffusive transport regime. However, advancements in nanotechnology and the development of novel materials have revealed non-classical heat transfer phenomena that extend beyond this traditional framework. These phenomena, which can be broadly categorized into those governed by kinetic theory and those extending beyond it, include ballistic transport, phonon hydrodynamics, coherent phonon transport, Anderson localization, and glass-like heat transfer, among others. Recent theoretical and experimental studies have focused on characterizing these non-classical behaviors using methods such as the Boltzmann transport equation, molecular dynamics, and advanced spectroscopy techniques. In particular, the dual nature of phonons, exhibiting both particle-like and wave-like characteristics, is fundamental to understanding these phenomena. This review summarizes state-of-the-art findings in the field, highlighting the importance of integrating both particle and wave models to fully capture the complexities of heat transfer in modern materials. The emergence of new research areas, such as chiral and topological phonons, further underscores the potential for advancing phonon engineering. These developments open up exciting opportunities for designing materials with tailored thermal properties and new device mechanisms, potentially leading to applications in thermal management, energy technologies, and quantum science.

Criterion for vanishing valley asymmetric transmission in dual-gated bilayer graphene

Abstract Realizing valley asymmetric transmission(VAT) for incoming valley unpolarized Dirac carriers across an electrostatically modulated confinement potential(ECP) step, which is located at the interface of the unipolar ($n-n'$) junction in dual-gated Bernal-bilayer graphene(BBG), has caught growing attention because it provides a platform to study the valley polarizer. Such a junction, however, seems to preclude from supporting vanishing VAT. Based on the effective two-band Hamiltonian of BBG with wave matching approach, we demonstrate theoretically that VAT through the $n$/$ n'$ interface vanishes in the following conditions: (i) the disappearing electrostatically modulated interlayer potential difference(EPD), or (ii) the invariance condition of the sum or difference of ECPs and EPDs, which physically corresponds to the zero band offset of the conduction or valence band in the band alignment of $n-n'$ junction. Guided by this, it is worth mentioning that the we can derive simple, analytical valley-independent expressions for the reflection and transmission probabilities. We further find the appearance of the nearly vanishing VAT for the four-band model in bilayer graphene with 'Mexican hat'-like band. As a byproduct, we apply these findings to suggest the best design for the valley-dependent selection of momenta based on dual-gated BBG connected to two pristine BBG electrodes in which ECPs of the two outer regions are distinguishable and show that the sign of valley polarization can be switched via varying EPD. We expect our results can provide guidance for future device applications relying on ballistic and valley-selective transport.

Piezo-VFETs: Vacuum Field Emission Transistors Controlled by Piezoelectric MEMS Sensors as an Artificial Mechanoreceptor with High Sensitivity and Low Power Consumption.

As one of the most promising electronic devices in the post-Moore era, nanoscale vacuum field emission transistors (VFETs) have garnered significant attention due to their unique electron transport mechanism featuring ballistic transport within vacuum channels. Existing research on these nanoscale vacuum channel devices has primarily focused on structural design for logic circuits. Studies exploring their application potential in other vital fields, such as sensors based on VFET, are more limited. In this study, for the first time, the design of a vacuum field emission transistor (VFET) coupled with a piezoelectric microelectromechanical (MEMS) sensing unit is proposed as the artificial mechanoreceptor for sensing purposes. With a negative threshold voltage similar to an N-channel depletion-mode metal oxide silicon field effect transistor, the proposed VFET has its continuous current tuned by the piezoelectric potential generated by the sensing unit, amplifying the magnitude of signals resulting from electromechanical coupling. Simulations have been conducted to validate the feasibility of such a configuration. As indictable from the simulation results, the proposed piezoelectric VFET exhibits high sensitivity and an electrically adjustable measurement range. Compared to the traditional combination of piezoelectric MEMS sensors and solid-state field effect transistors (FETs), the piezoelectric VFET design has a significantly reduced power consumption thanks to its continuous current that is orders of magnitude smaller. These findings reveal the immense potential of piezoelectric VFET in sensing applications, building up the basis for using VFETs for simple, effective, and low-power pre-amplification of piezoelectric MEMS sensors and broadening the application scope of VFET in general.

Room temperature ballistic transport of exciton-polaritons in a one-dimensional whispering gallery microcavity

Abstract In this work, we report experimental observation of ballistic transport of condensed exciton-polaritons at room temperature in a one-dimensional whispering gallery microcavity. Such coherent transport, initiated by the pronounced inter-particle interactions of polaritons, leads to the generation of two symmetric emission beams in the momentum (angular) space. By means of spatially filtered angle-resolved photoluminescence imaging spectroscopy, we were able to identify their origin and successfully rationalized these observations using the potential energy-to-kinetic energy conversion picture. The energy-dependent emission linewidth, as well as TM to TE inter-mode scattering, have also been discussed.

Ballistic Electron Source with Magnetically Controlled Valley Polarization in Bilayer Graphene.

The achievement of valley-polarized electron currents is a cornerstone for the realization of valleytronic devices. Here, we report on ballistic coherent transport experiments where two opposite quantum point contacts (QPCs) are defined by electrostatic gating in a bilayer graphene (BLG) channel. By steering the ballistic currents with an out-of-plane magnetic field we observe two current jets, a consequence of valley-dependent trigonal warping. Tuning the BLG carrier density and number of QPC modes (m) with a gate voltage we find that the two jets are present for m=1 and up to m=6, indicating the robustness of the effect. Semiclassical simulations confirm the origin of the signals by quantitatively reproducing the jet separations without fitting parameters. In addition, our model shows that the ballistic current jets have opposite valley polarization. As a consequence, by steering each jet toward the detector using a magnetic field, we achieve full control over the valley polarization of the collected currents, envisioning such devices as ballistic current sources with tunable valley polarization. We also show that collimation experiments are a sensitive probe to the trigonal warping of the Fermi surface.

Strong current in carbon nanoconductors: Mechanical and magnetic stability

Carbon nanoconductors are known to have extraordinary mechanical strength and interesting magnetic properties. Moreover, nanoconductors based on one- or two-dimensional carbon allotropes display a very high current-carrying capacity and ballistic transport. Here, we employ a recent, simple approach based on density functional theory to analyze the impact of strong current on the mechanical and magnetic properties of carbon nanoconductors. We find that the influence of the current itself on the bond-strength of carbon in general is remarkably low compared to e.g. typical metals. This is demonstrated for carbon chains, carbon nanotubes, graphene and polyacetylene. We can trace this to the strong binding and electronic bandstructure. On the other hand, we find that the current significanly change the magnetic properties. In particular, we find that currents in graphene zig-zag edge states quench the magnetism.

Laser-initiated electron and heat transport in gold-skutterudite CoSb3 bilayers resolved by pulsed x-ray scattering

Abstract Electron and lattice heat transport have been investigated in bilayer thin films of gold and CoSb3 after photo-excitation of the nanometric top gold layer through picosecond x-ray scattering in a pump-probe setup. The kinetics of heat transfer are detected by thermal lattice expansion and compared to simulations based on the two-temperature model of coupling of electron and phonon degrees of freedom. The unexpected observation of a larger portion of the deposited heat being detected in the underlying CoSb3 layer before the topmost gold layer is heated supports the picture of transport of the photo-excited electrons from gold to the underlying layer to be converted into lattice heat. The change of partition of heat between the gold and CoSb3 layer with laser fluence and wavelength (either exciting intraband transitions or additionally interband transitions) is rooted in the amplitude of electron temperature. Higher electron temperatures result in a longer equilibration time with the lattice and thus a larger proportion of ballistic electron transport across the interface.

Enhancing Ballistic Transport and C3–C4 Alcohol Dehydration through Machine Learning-Designed Cationic Graphene Oxide Membranes

Enhancing Ballistic Transport and C₃–C₄ Alcohol Dehydration through Machine Learning-Designed Cationic Graphene Oxide Membranes

Superdiffusive to ballistic transport in nonintegrable Rydberg simulator

A common wisdom posits that transport of conserved quantities across clean nonintegrable quantum systems at high temperatures is diffusive when probed from the emergent hydrodynamic regime. We show that this empirical paradigm may alter if the strong interaction limit is taken. Using Krylov-typicality and purification matrix-product-state methods, we establish in short-to-intermediate time scales the following observations for the nonintegrable lattice model imitating the experimental Rydberg blockade simulator. Given the strict projection owing to the infinite density-density repulsion V, the Rydberg chain’s energy transport in the presence of a transverse field g is tentatively superdiffusive at infinite temperature featured by an anomalous scaling exponent 34\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\frac{3}{4}$$\\end{document}, indicating the potential existence of a novel dynamical universality class. Imposing, in addition, a growing longitudinal field h causes a putative superdiffusion-to-ballistic transport transition at h ≈ g. Interestingly, all the above results persist for large but finite interactions and temperatures, provided that the strongly interacting condition g, h ≪ kBT ≪ V is fulfilled. Our predictions are testable by current Rydberg quantum simulation facilities.

Generalized hydrodynamics for the volterra lattice: ballistic and non-ballistic behavior of correlation functions

Abstract In recent years, a lot of effort has been put in describing the hydrodynamic behavior of in- tegrable systems. In this paper, we describe such picture for the Volterra lattice. Specifically, we are able to explicitly compute the susceptibility matrix and the current-field correlation matrix in terms of the density of states of the Volterra lattice endowed with a Generalized Gibbs ensemble. Furthermore, we apply the theory of linear Generalized Hydrodynamics to describe the Euler scale behavior of the correlation functions. We anticipate that the solution to the Generalized Hydrodynamics equations develops shocks at ξ0=x/t ; so this linear approximation does not fully describe the behavior of correlation functions. Intrigued but this fact, we performed several numerical investigations which show that, exactly when the solution to the hydrodynamic equations develops shock, the correlation functions show an highly oscillatory behavior. In view of this empirical observation, we believe that at this point ξ0 the diffusive contribution are not sub-leading corrections to the ballistic transport, but they are of the same order.

Ballistic to diffusive transition for swimmers in a periodic vortex array.

We study the transport of rigid ellipsoidal swimmers in a periodic vortex array via numerical simulation and dynamical systems analysis. Via ensemble simulations, we show the counterintuitive result that slower swimming speeds can generate fast ballistic transport, while faster swimming speeds generate chaotic and diffusive transport, which is inherently slower in the long run. To explain this, we use the symmetry of the flow to construct a time-reversible Poincaré return map on a two-dimensional surface of sectionin phase space. For sufficiently small swimming speeds, we find stable periodic orbits on the surface of sectionsurrounded by invariant tori, similar to Kolmogorov-Arnold-Moser curves. Trajectories within these tori are ballistic. As the swimming speed is increased, the periodic orbits undergo a sequence of period-doubling bifurcations that destroys the ballistic tori. These bifurcations exactly match the ballistic to diffusive transition from the ensemble simulations. Additional ensemble simulations are used to test the robustness of these results to noise. The ballistic behavior is destroyed as the strength of rotational diffusion increases. However, we estimate that the ballistic tori might still be seen in experiments.

Ballistic Energy Transport via Long Alkyl Chains: A New Initiation Mechanism.

In an effort to increase the speed and efficiency of ballistic energy transport via oligomeric chains, we performed measurements of the transport in compounds featuring long alkyl chains of up to 37 methylene units. Compounds of the N3-(CH2)n-COOMe type (denoted as aznME) were synthesized with n = 5, 10, 15, 19, 28, 37 and studied using relaxation-assisted two-dimensional infrared spectroscopy. The speed of the ballistic transport, initiated by the N3 tag excitation, increased ca. 3-fold for the longer chains (n = 19-37) compared to the shorter chains, from 14.7 to 48 Å/ps, in line with an earlier prediction (Nawagamuwage et al. 2021, J. Phys. Chem. B, 125, 7546). Modeling, based on solving numerically the Liouville equation, was capable of reproducing the experimental data only if three wavepackets are included, involving CH2 twisting (Tw), wagging (W), and rocking (Ro) chain bands. The approaches for designing molecular systems featuring a higher speed and efficiency of energy transport are discussed.

GaN Nano Air Channel Diodes: Enabling High Rectification Ratio and Neutron Robust Radiation Operation.

Nano air channel transistors (NACTs) provide numerous advantages over traditional silicon devices, including faster switching speeds, higher operating frequencies, and enhanced radiation hardness attributable to the ballistic transport of electrons. In the development of field-emission-based integrated circuits, low-power consumption rectifying nano air channel diodes (NACDs) play a crucial role. However, achieving rectification characteristics in NACDs is challenging due to their structural and material symmetry. This paper proposes a vertical GaN NACD with a consistent nano air channel fabricated using IC-compatible processes. The GaN NACD exhibits an exceptionally low turn-on voltage of 0.3 V while delivering a high output current of 5.02 mA at 3 V. Notably, it demonstrates a high rectification ratio of up to 2.2 × 105, attributing to significant work function disparities within the GaN-Au structure, coupled with the reduction of Au surface roughness to minimize reverse current. Furthermore, the junction-free structure and superior material properties of GaN enable the NACD to be suitable for use in radiation-rich environments. With its potential as a fundamental component of ultrafast and ultrahigh-frequency integrated circuits, this intriguing and cost-effective rectifying diode is anticipated to garner widespread interest within the electronics community.

Anomalous Seebeck effect and counterpropagating ballistic currents in graphene

Anomalous Seebeck effect and counterpropagating ballistic currents in graphene

Universality and the thermoelectric transport properties of a double quantum dot system: Seeking for conditions that improve the thermoelectric efficiency

Employing universal relations for the Onsager coefficients in the linear regime at the symmetric point of the single impurity Anderson model, we calculate the conditions under which the quantum scattering phase shift should satisfy to produce the asymptotic Carnot’s limit for the thermoelectric efficiency. We show that a single quantum dot connected by metallic leads at the Kondo regime cannot achieve the best thermoelectric efficiency. We study a serial double quantum dot system, with the quantum dots immersed in ballistic conduction channels. Each QD exhibits a strong but finite local electronic correlation UU. We show that maintaining one dot in the electron-hole symmetric point and allowing charge fluctuations in the other QD makes it possible to drive the system to the maximum thermoelectric efficiency. We also show that the bound states in the continuum (BICs) and quasi-BICs associated with the quantum scattering interference process drive the DQD to the maximum thermoelectric efficiency. We identify two types of quasi-BICs that occur at low and high temperatures: The first is associated with single Fano resonances, and the last is with several Fano processes. We also discussed possible temperature values and conditions that could be linked with the experimental realization of the results.

Effect of a perpendicular magnetic field on bilayer graphene under dual gating

By studying the impact of a perpendicular magnetic field B on AB-bilayer graphene (AB-BLG) under dual gating, we yield several key findings for the ballistic transport of gate U∞. Firstly, we discover that the presence of B leads to a decrease in transmission. At a high value of B, we notice the occurrence of anti-Klein tunneling over a significant area. Secondly, in contrast to the results reported in the literature, where high peaks were found with an increasing in-plane pseudomagnetic field applied to AB-BLG, we find a decrease in conductivity as B increases. However, it is worth noting that in both cases, the number of oscillations decreases compared to the result in the study where no magnetic field was present (B=0). Thirdly, at the neutrality point, we demonstrate that the conductivity decreases and eventually reaches zero for a high value of B, which contrasts with the result that the conductivity remains unchanged regardless of the value taken by the in-plane field. Finally, we consider the diffusive transport with gate U∞=0.2γ1 and observe two scenarios. The amplitude of conductivity oscillations increases with B for energy E less than U∞ but decreases in the opposite case E>U∞.

Simulation study of phonon transport at the GaN/AlN superlattice interface: Ballistic and non-equilibrium phenomena

GaN/AlN superlattice structures have potential for high electron mobility transistors (HEMTs) applications; however, nonequilibrium phonon transport mechanisms within the superlattice have not been systematically investigated. Therefore, we investigate in detail the non-Fourier thermal conductivity of superlattice structures in the perpendicular interface direction and in the parallel interface direction around the phonon BTE numerical solution in this paper, taking the kinetic parameter based on the first principle as the input parameter of the equations and based on the DOM numerical solution scheme. The study reveals that mode temperature non-equilibrium in superlattices arises from ballistic transport within the layers and interface scattering between the layers. The thermal conductivity (TC) of superlattices can be modulated by scale effects, and in superlattices with small thicknesses, phonons exhibit quasi-ballistic transport. The interface thermal resistance predominantly originates from contributions by acoustic phonon (AP) and the first optical phonon (OP1). With increasing interface density, the combined effects of interface scattering and boundary scattering lead to strong phonon scattering, resulting in a decrease in TC parallel to the interfaces. This work provides valuable insights into the thermal transport properties of GaN/AlN superlattice semiconductors and offers useful theoretical guidance for thermal management through phonon particle properties.