Backscattered Electron Intensity Research Articles

Observation and quantitative analysis of dislocations in steel using electron channeling contrast imaging method with precise control of electron beam incident direction.

Electron channeling contrast imaging (ECCI) was applied by precisely controlling the primary electron beam incident direction of the crystal plane in scanning electron microscope (SEM), and the dislocation contrast in steel materials was investigated in detail via SEM/ECCI. The dislocation contrast was observed near a channeling condition, where the incident electron beam direction of the crystal plane varied, and the backscattered electron intensity reached a local minimum. Comparing the dislocation contrasts in the visualized electron channeling contrast (ECC) images and transmission electron microscope (TEM) images, the positions of all dislocation lines were coincident. During the SEM/ECCI observation, the dislocation contrast varied depending on the incident electron beam direction of the crystal plane and accelerating voltages, and optimal conditions existed. When the diffraction condition g and the Burgers vector b of dislocation satisfied the condition g⸱b = 0, the screw dislocation contrast in the ECC image disappeared. An edge dislocation line was wider than a screw dislocation line. Thus, the SEM/ECCI method can be used for dislocation characterization and the strain field evaluation around dislocation, like the TEM method. The depth information of SEM/ECCI, where the channeling condition is strictly satisfied, can be obtained from dislocation contrast deeper than 5ξg, typically used for depth of SEM/ECCI.

Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction.

Extended defects, like threading dislocations, are detrimental to the performance of optoelectronic devices. In the scanning electron microscope, dislocations are traditionally imaged using diodes to monitor changes in backscattered electron intensity as the electron beam is scanned over the sample, with the sample positioned so the electron beam is at, or close to the Bragg angle for a crystal plane/planes. Here, we use a pixelated detector instead of single diodes, specifically an electron backscatter diffraction (EBSD) detector. We present postprocessing techniques to extract images of dislocations and surface steps, for a nitride thin film, from measurements of backscattered electron intensities and intensity distributions in unprocessed EBSD patterns. In virtual diode (VD) imaging, the backscattered electron intensity is monitored for a selected segment of the unprocessed EBSD patterns. In center of mass (COM) imaging, the position of the center of the backscattered electron intensity distribution is monitored. Additionally, both methods can be combined (VDCOM). Using both VD and VDCOM, images of only threading dislocations, or dislocations and surface steps can be produced, with VDCOM images exhibiting better signal-to-noise. The applicability of VDCOM imaging is demonstrated across a range of nitride semiconductor thin films, with varying surface step and dislocation densities.

Monte Carlo Simulation of Free-standing Thin Films under Low Energy Electron Bombardment: Electron Inelastic Mean Free Path (IMFP) Determination Using Elastic Peak of the Transmitted Electrons

Abstract: The electron energy spectra of transmitted scattered electrons from free-standing films are simulated using a Monte Carlo computational approach. Elastic scattering is simulated using Mott cross-sections and inelastic scattering via discrete processes determined from dielectric function data. This allows one to simulate the secondary electrons as well as the loss peaks near the elastic (zero-loss) peak. The current study suggested a directed approach for determining the electron inelastic mean free path (IMFP) of materials at low primary electron energies. The IMFP of the reference material is not necessary for the suggested technique. The suggested technique uses the ratio between the transmitted elastic peak intensity and the background intensity of backscattered electrons. Free-standing films of Si, Cu, and Au were studied with thicknesses varying from 2 to 12 nm. Primary electron energies of 1, 3, and 5 keV were applied. The results appeared very good, with the percentage error range being between 5% and 25%. We also investigated the proportion of the first and second plasmon peak intensities to the elastic peak intensity. We believe that the latter could provide a directed method of measuring the IMFP of materials. Keywords: Inelastic mean free path, Monte Carlo simulation, Geant4, Free-standing film, Zero-loss peak.

Detection of antimicrobial impact on gram-negative bacterial cell envelope based on single-cell imaging by scanning electron microscopy

Rapid determination of drug efficacy against bacterial pathogens is needed to detect potentially resistant bacteria and allow for more rational use of antimicrobials. As an indicator of the antimicrobial effect for rapid detection, we found changes in image brightness in antimicrobial-affected bacteria by scanning electron microscopy (SEM). The cell envelopes of unaffected bacteria were stained with phosphotungstic acid (PTA), whereas the entire cells of affected bacteria were stained. Since tungsten density increases backscattered electron intensity, brighter bacterial images indicate lethal damage. We propose a simplified method for determining antimicrobial efficacy by detecting damage that occurs immediately after drug administration using tabletop SEM. This method enabled the visualization of microscopic deformations while distinguishing bacterial-cell-envelope damage on gram-negative bacteria due to image-brightness change. Escherichia coli, Acinetobacter baumannii, Enterobacter cloacae, Klebsiella pneumoniae, and Pseudomonas aeruginosa were exposed to imipenem and colistin, which affect the cell envelope through different mechanisms. Classification of single-cell images based on brightness was quantified for approximately 500 bacteria per sample, and the bright images predominated within 5 to 60 min of antimicrobial treatment, depending on the species. Using intracellular PTA staining and characteristic deformations as indicators, it was possible to determine the efficacy of antimicrobials in causing bacterial-cell-envelope damage.

Automated Segmentation of Olivine Phenocrysts in a Volcanic Rock Thin Section Using a Fully Convolutional Neural Network

An example of automated characterization and interpretation of the textural and compositional characteristics of solids phases in thin sections using machine learning (ML) is presented. In our study, we focus on the characterization of olivine in volcanic rocks, which is a phase that is often chemically zoned with variable Mg/(Mg + Fe) ratios, so-called magnesian number or mg#. As the olivine crystals represent only less than 10 vol% of the volcanic rock, a pre-processing step is necessary to automatically detect the phases of interest in the images on a pixel level, which is achieved using Deep Learning. A major contribution of the presented approach is to use backscattered electron (BSE) images to: 1) automatically segment all olivine crystals present in the thin section; 2) determine quantitatively their mg#; and 3) identify different populations depending on zoning type (e.g., normal vs reversal zoning) and textural characteristics (e.g., microlites vs phenocrysts). The segmentation of the olivine crystals is implemented with a pretrained fully convolutional neural network model with DeepLabV3 architecture. The model is trained to identify olivine crystals in backscattered electron images using automatically generated training data. The training data are generated automatically from images which can easily be created from X-Ray element maps. Once the olivines are identified in the BSE images, the relationship between BSE intensity value and mg# is determined using a simple regression based on a set of microprobe measurements. This learned functional relationship can then be applied to all olivine pixels of the thin section. If the highest possible map resolution (1 micron per 1 pixel) is selected for the data acquisition, the full processing time of an entire thin section of ∼3×4cm containing more than 1,500 phenocrysts and 20.000 microliths required 140 h of data acquisition (BSE + X-Ray element maps), 8 h of training and 16 h of segmentation and classification. Our further tests demonstrated that the 140 h of data acquisition can be reduced at least by a factor of 4 since only a part of the thin section area (25% or even less) needs to be used for training. The characterization of each additional thin section would only require the BSE data acquisition time (less than 48 h for a whole thin section), without an additional training step. The paper describes the training and processing in detail, shows analytical results and outlines the potential of this Deep Learning approach for petrological applications, resulting in the automatic characterization and interpretation of mineral textures and compositions with an unprecedented high resolution.

Modelling Electron Channeling Contrast Intensity of Stacking Fault and Twin Boundary Using Crystal Thickness Effect.

In a scanning electron microscope, the backscattered electron intensity modulations are at the origin of the contrast of like-Kikuchi bands and crystalline defects. The Electron Channeling Contrast Imaging (ECCI) technique is suited for defects characterization at a mesoscale with transmission electron microscopy-like resolution. In order to achieve a better comprehension of ECCI contrasts of twin-boundary and stacking fault, an original theoretical approach based on the dynamical diffraction theory is used. The calculated backscattered electron intensity is explicitly expressed as function of physical and practical parameters controlling the ECCI experiment. Our model allows, first, the study of the specimen thickness effect on the channeling contrast on a perfect crystal, and thus its effect on the formation of like-Kikuchi bands. Then, our theoretical approach is extended to an imperfect crystal containing a planar defect such as twin-boundary and stacking fault, clarifying the intensity oscillations observed in ECC micrographs.

Direct evidence for the source of uranium in the Baiyanghe deposit from accessory mineral alteration in the Yangzhuang granite porphyry, Xinjiang Province, northwest China

AbstractCircumstantial evidence for the sources of uranium in ore deposits may be drawn from the study of deposit geochemistry and mineralogy. However, direct evidence supporting uranium leaching from source rocks has rarely been found. This study investigates the source of uranium in the Baiyanghe deposit in the Xiemisitai Mountains, northwest China. The main uranium ore bodies occur as fracture-fillings along contact zones between the Yangzhuang granite porphyry and the Devonian volcanic rocks. Zircon, thorite, columbite-(Mn), and bastnäsite are the dominant accessory minerals that host uranium in the granite porphyry. In situ columbite-(Mn) LA-ICP-MS U-Pb dating yields a weighted mean 206Pb/238U age of 310 ± 4 Ma, suggesting that the Yangzhuang granite porphyry was emplaced during the Late Carboniferous. Backscattered electron (BSE) images reveal that various degrees of alteration of these same accessory minerals may be observed in the granite porphyry, and the altered domains of these minerals have lower BSE intensities compared to the unaltered domains. Results indicate that the altered domains of zircon grains have lower concentrations of Zr, Si, and U, and higher concentrations of Y, Fe, Ca, and P relative to the unaltered domains, and the altered domains of columbite-(Mn) grains are enriched in Ti and Fe and are depleted in Nb, Ta, Mn, U, and Zr. The altered domains of thorite grains have higher concentrations of Zr, Fe, Ca, Nb, and P, and lower Th and U compared to those of the relict domains. The petrochemical data indicate that the granite porphyry experienced losses in U, Be, F, Ba, Sr, Pb, Zr, Mo, Nb, Ta, and Hf during alteration. These results suggest that the past-magmatic hydrothermal fluids might be responsible for the mobilization of uranium form minerals in the granite porphyry. It is concluded that U-bearing accessory minerals in the granite porphyry were the primary source of uranium, and that post-magmatic hydrothermal processes caused remobilization and significant localized enrichment of the uranium to form high-grade ores as fracture-fillings along its contacts.

Geochemical studies of monazites from coastal sands of Kandivalasa–Dibbalapalem coast, Andhra Pradesh

The present study deals with the geochemical and geochronological studies of monazite from Kandivalasa–Dibbalapalem coast, north Andhra Pradesh. The average concentration of ThO2 and UO2 from beach sands is 11.38 and 0.40 wt.% and from dune sands is 11.94 and 0.63 wt.%. The average REE from beach and dune sands is 58.64 and 57.94 wt.% and they are rich in La, Ce, and Nd. The most common characteristic feature to all monazite shows that the total REE content exceeds that of the actinides (Thru). Monazite that formed after the garnet break down contains significantly higher amounts of Y and HREE in fine sediments. The chondrite-normalized REE distribution patterns of monazite show uniformly enriched light rare earth element (∑LREE) which could be due to the preferential incorporation of lighter lanthanides and positive europium anomalies indicate that monazite was formed from magma/anatectic melt with high oxygen fugacity. Back-scattered electron (BSE) images of monazite showing compositional zoning and the bright outermost rim which is attributed to the influence by variations of LREE, HREE, U, Th, Pb and Y concentrations. The primary controlling factor, radiation damaged monazite yields in most cases significantly, with a strong dependence on the degree of metamictization based on the BSE intensity. The geochemical dating (U–Th–Pb) of monazite ranging age from 487 to 977 Ma from grain interior, can signify the age of Grenvillean evolution. This interpretation changes the existing tectonothermal history of the northern Eastern Ghats Belt. Our data show that the two adjacent crustal domains of the Eastern Ghats Belt show distinctly contrasting Neoproterozoic histories.

Perda de Pb por Difusão Contínua em Zircão Ígneo: Estudo da Espectroscopia BSE, ID-TIMS e Raman em Granito Mesoproterozoico do SW do Cráton Amazônico

This work presents a detailed investigation on zircon crystals of a Mesoproterozoic granite from the SW Amazonian Craton using a combination of back scattered electron (BSE) imaging, thermal ionisation mass spectrometry (TIMS) and Raman scattering spectroscopy. Six zircon grains were analysed. The results plotted in the Concordia diagram yielded an upper intercept age of 1423.0 ± 3.8 Ma, which is interpreted as the crystallization age of the rock. The scattering of the analyses in such diagram indicates that U-Pb isotopes are volume-dependent in the studied zircon grains. BSE reveals zonation in the zircon crystals, and Hf is the main element causing the variability in the BSE intensity and U has a secondary effect. Both elements have much higher atomic number than the principal constituents of zircon (Zr, Si and O), so the substitution of Zr by U and Hf results in increasing image brightness. BSE images from the zircon grains exhibit a euhedral external shape and fine-scale euhedral oscillatory zoning. The predominance of magmatic zoned crystals points out that the granite has not suffered metamorphic heating or any other processes that induce the formation of new phases. The results of the Raman scattering technique indicate that a SiO 4 tetrahedral internal vibrational structure is sufficiently sensitive to determine the increasing degree of metamictization. Furthermore, evidence for metamictization is given by the heterogeneity of the half-width values of the Raman scattering peaks, which exhibit a decreasing trend from the core to the rims of the analysed grains. We concluded that the combination of the three techniques provides information on the Pb loss and that the degree of U-Pb isotopic discordance correlates closely with the volume of the zircon grain. The data, in addition to the lateral degree of metamictization detected by the Raman scattering technique, indicate that the loss of radiogenic Pb may be linked to the continuous diffusion of this element. The correlation of the U-Pb discordance and metamictization emphasizes the importance of the Raman scattering spectroscopy analysis to performing zircon dating. Indeed, it is a helpful tool for geochronologists.

Biological serial block face scanning electron microscopy at improved z-resolution based on Monte Carlo model

Serial block-face electron microscopy (SBEM) provides nanoscale 3D ultrastructure of embedded and stained cells and tissues in volumes of up to 107 µm3. In SBEM, electrons with 1–3 keV energies are incident on a specimen block, from which backscattered electron (BSE) images are collected with x, y resolution of 5–10 nm in the block-face plane, and successive layers are removed by an in situ ultramicrotome. Spatial resolution along the z-direction, however, is limited to around 25 nm by the minimum cutting thickness. To improve the z-resolution, we have extracted depth information from BSE images acquired at dual primary beam energies, using Monte Carlo simulations of electron scattering. The relationship between depth of stain and ratio of dual-energy BSE intensities enables us to determine 3D structure with a ×2 improvement in z-resolution. We demonstrate the technique by sub-slice imaging of hepatocyte membranes in liver tissue.

Back-scattered electron visualization of ferroelectric domains in a BiFeO3 epitaxial film

Three-dimensional orientation of the ferroelectric (FE) domain structure of a BiFeO3 epitaxial film was investigated by scanning electron microscopy (SEM) using back-scattered electrons and piezoresponse-force microscopy (PFM). By changing the crystallographic orientation of the sample and the electron collection angle relative to the detector, we establish a link between the orientation of polarization vectors (out-of-plane and in-plane) in the BiFeO3 film and the back-scattered electron image contrast in agreement with PFM investigations. The different FE polarization states in the domains correspond to altered crystalline environments for the impingent primary beam electrons. We postulate that the resultant back-scattered electron domain contrast arises as a result of either differential absorption (through a channelling effect) or through back-diffraction from the sample, which leads to a projected diffraction pattern super-imposed with the diffuse conventional back-scattered electron intensity. We demonstrate that SEM can be sensitive for both out-of-plane and in-plane polarization directions using the back-scattered electron detection mode and can be used as a non-destructive and fast method to determine 3D FE polarization orientation of domains.

Texture, Crystal Structure, and Composition of Fluorapatites From Iron Oxide-Apatite (Ioa) Deposits, Eastern Adirondack Mountains, New York

Abstract The iron oxide-apatite (IOA) deposits of the eastern Adirondack Mountains consist of intrusive sheets or dikes of magnetite, fluorapatite, augitic pyroxene, quartz, and microcline. Other trace mineral phases include ilmenite with hematite exsolution, V-rich titanite rimming magnetite, zircon, monazite-(Ce), stillwellite-(Ce), lanthanite-(Ce), allanite-(Ce), and thorite. Observations under transmitted light show polygonal and cumulate textures. The ore bodies, each with knife-edge contacts with the host gneisses, are closely associated in time with A-type leucogranites and granitic gneisses ( ca . 1070–1050 Ma). Backscattered electron (BSE) images highlight the following types of fluorapatite-monazite-(Ce) relations that formed as a result of metamorphism and fluid-rock interaction: (1) areas of relatively low BSE intensities containing tiny secondary monazite-(Ce) and thorite crystals developed within brighter apatite grains and along crystal margins and fractures; (2) areas of low BSE intensity within larger fluorapatite grains; (3) oriented rods of quartz in fluorapatite; (4) monazite-(Ce) rimming fluorapatite; and (5) multi-domain clusters of fluorapatite in unzoned fluorapatite. Fluorapatite samples from these IOA deposits were analyzed by electron microprobe and laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS) for major and trace elements. All grains contain high concentrations of light and heavy rare earth elements and yttrium, and samples from some deposits are exceptionally enriched in heavy rare earth elements and yttrium. The crystal structures of the fluorapatites from Cheever, Mineville, Palmer Hill, Arnold Hill, and Rutgers mine were analyzed. Rare earth elements (REE) are dominant at the Ca2 site, and in the most REE-rich sample, from Cheever, 5.7% of the Ca2 sites and 3.5% of the Ca1 sites are occupied by REEs. We consider that the most likely geological scenario for the incorporation of the REEs in fluorapatite includes high concentrations of incompatible elements in a dense iron- and phosphorus-rich melt that formed by immiscibility with the silicate melt of the Lyon Mountain granite. The high REE concentration appears to have been accommodated in the fluorapatite structure through a coupled substitution with Si 4+ . A later, low-temperature stage of fluid infiltration, probably at greenschist facies conditions, re-mobilized the REE and produced secondary minerals within the ore, including low-actinide bearing monazite-(Ce), tremolite, ferro-actinolite, chlorite, rutile, and hematite.

Quantitative three‐dimensional ice roughness from scanning electron microscopy

AbstractWe present a method for inferring surface morphology of ice from scanning electron microscope images. We first develop a novel functional form for the backscattered electron intensity as a function of ice facet orientation; this form is parameterized using smooth ice facets of known orientation. Three‐dimensional representations of rough surfaces are retrieved at approximately micrometer resolution using Gauss‐Newton inversion within a Bayesian framework. Statistical analysis of the resulting data sets permits characterization of ice surface roughness with a much higher statistical confidence than previously possible. A survey of results in the range −39°C to −29°C shows that characteristics of the roughness (e.g., Weibull parameters) are sensitive not only to the degree of roughening but also to the symmetry of the roughening. These results suggest that roughening characteristics obtained by remote sensing and in situ measurements of atmospheric ice clouds can potentially provide more facet‐specific information than has previously been appreciated.

Electron channelling contrast imaging of dislocations in a conventional SEM

Dislocations in shock loaded tantalum single crystals were imaged using both transmission electron microscope (TEM) and electron channelling contrast image (ECCI) in a scanning electron microscope with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.

(Invited) Electron Channeling Contrast Imaging: Potential for Future Metrology in Semiconductor Industry

For future scaling of CMOS technology beyond the 10 nm node it is necessary to integrate high mobility semiconductors including (Si)Ge and III/V compounds on silicon substrates. The lattice mismatch between these materials and the Silicon platform can lead to the formation of defects which will cause a degradation of the final device performance. Therefore, a metrology technique is needed to monitor the presence and density of defects in blanket layer as well as in patterned structures such as fins. There are several techniques for defect metrology including optical methods, X-ray diffraction or transmission electron microscopy, however, expected defect densities (<105 cm-2) make them ineffective for this task. Electron channeling contrast imaging (ECCI) is scanning electron microscopy (SEM) technique used for the visualization and characterization of crystalline defects including dislocations or stacking faults. Distortions of the crystal lattice of a material due to the presence of such defects cause the variation of the backscattered electron intensity allowing for the visualization of the defects. Application of ECCI proved to be a consistent method for assessing the density and Burgers vector of different defect types in various materials with reliability comparable to that of transmission electron microscopy (TEM). Moreover, TEM limitations related to the destructive sample preparation necessity, limited viewed area accessible for each sample and possible difference in the behavior of thin samples compared to bulk ones brings SEM based ECCI as excellent candidate for non-destructive investigation of large sample areas with low defect densities. For such an analysis, areas exceeding 105 μm2 in size need to be examined to ensure proper statistics. Therefore, automated acquisition of a set of tiles that can be stitched into a single image with a resolution allowing for the detection of single threading dislocations is required. Important parameter for high contrast ECCI of crystalline defects is the sample orientation with respect to the electron beam. The sample should be oriented close to the Bragg condition. This is facilitated by the acquisition of Electron Channeling Patterns and simultaneous sample tilting and/or rotation. For the majority of samples based on silicon wafers only require a couple of degrees tilt from the zone axis. Hence, the technique can be applied to 300 mm wafers easily.The presented technique allows the visualizing and analyzing the density and distribution of threading dislocations in blanket SiGe layers of different defect densities, strain relaxed buffers as well as on (Si)Ge and III/V fin structures. Therefore we are able to demonstrate that automated image acquisition of ECCI has big potential as possible metrology tool for future semiconductor devices process.

A strain state in synthetic diamond crystals by the data of electron backscatter diffraction method

The authors put forward a procedure of determination of strain tensor components through the analysis of distribution of intensity of back-scattered electrons in Kikuchi patterns. The strain state has been studied in local areas of a synthetic diamond crystal produced by the temperature gradient method in the Fe–Al–C system through growing onto a diamond single crystal synthesized in the Ni–Mn–C system. Characteristic surfaces of the strain tensors and strain ellipsoids have been plotted; special features of strain distribution in the crystal have been analyzed. Diagonal tensor components have been determined from the changes of distributions of intensity of individual bands, the other components have been found from the displacements of axes of zones relative to their positions in the standard Kikuchi pattern.

Simultaneous imaging of the ferromagnetic and ferroelectric structure in multiferroic heterostructures

By measuring the spin polarization of secondary electrons and the intensity of backscattered electrons generated in a scanning electron microscope, we are able to simultaneously image the ferromagnetic domain structure of a ferromagnetic thin film and the ferroelectric domain structure of the underlying ferroelectric substrate upon which it is grown. Simultaneous imaging allows straightforward, quantitative measurements of the correlations in these complex multiferroic systems. We have successfully imaged domains in CoFe/BFO and Fe/BTO, two systems with very different ferromagnet/ferroelectric coupling mechanisms, demonstrating how this technique provides a new local probe of magneto electric/strictive effects in multiferroic heterostructures.

Variation of backscatter electron intensity

The authors report experimental data on the dose contribution of backscattered electrons on a silicon substrate. The backscattered electron intensity, i.e., the relative dose contribution from backscattered electrons with respect to direct write dose, is not constant, but varies with the percentage of the total dose received by backscattered electrons. In order to measure the backscattered electron contribution, the position and number of electrons are controlled by electron beam lithography. The dose contribution is measured using a negative electron beam resist, which quantifies the electron interactions in a nanoscale volume on the surface of the substrate. The data presented here will lead to improvements in proximity effect correction algorithms and ultimately improve pattern creation using electron beam lithography.

The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns

We present a set of universal curves that predict the range and intensity of backscattered electrons which can be used in conjunction with electron beam lithography to create high fidelity nanoscale patterns. The experimental method combines direct write dose, backscattered dose, and a self-reinforcing pattern geometry to measure the dose provided by backscattered electrons to a nanoscale volume on the substrate surface at various distances from the electron source. Electron beam lithography is used to precisely control the number and position of incident electrons on the surface of the material. Atomic force microscopy is used to measure the height of the negative electron beam lithography resist. Our data shows that the range and the intensity of backscattered electrons can be predicted using the density and the atomic number of any solid material, respectively. The data agrees with two independent Monte Carlo simulations without any fitting parameters. These measurements are the most accurate electron range measurements to date.

Simulation of the backscattered electron intensity of multi layer structure for the explanation of secondary electron contrast

The intensities of the secondary electrons (SE) and of the backscattered electrons (BSE) at energy 100 eV have been measured on a Ni/C/Ni/C/Ni/C/(Si substrate) multilayer structure by exciting it with primary electrons of 5, 2.5 and 1.25 keV energies. It has been found that both intensities similarly vary while thinning the specimen. The difference as small as 4 nm in the underlying layer thicknesses resulted in visible intensity change. Utilizing this intensity change, the thickness difference of neighboring regions could be revealed from the SE image. No simple phenomenological model was found to interpret the change of intensity, thus the intensity of the BSE electrons has been calculated by means of a newly developed Monte Carlo simulation. This code also considers the secondary electron generation and transport through the solid. The calculated and measured intensities agree well supporting the validity of the model.