Back-gated Field-effect Transistors Research Articles

Batch production of centimeter-scale monolayer MoS2 with low nucleation by face-to-face metal precursor supply

Transition-metal dichalcogenides (TMDs) show great potential for next-generation semiconductor due to its atomic level thickness, tunable band gap and high carrier mobility. However, high-quality monolayer MoS2 (ML-MoS2) films require stringent growth conditions during preparation. Here, we report a face-to-face metal precursor supply approach during chemical vapor deposition (CVD) to batch production of uniform ML-MoS2 films. Mo foils provide a stable concentration of metal precursors leading to uniform film generation with low nucleation. Comprehensive characterization techniques, including spectroscopic, surface topography and atomic scale analysis confirm the centimeter-scale homogeneity and high crystallographic quality of the monolayer films. Back-gate field effect transistors (FET) fabricated by ML-MoS2 exhibit excellent electrical performance. This methodology provides a pathway for the growth of TMDs, which should promote their applications in high-performance electronics or other fields.

Synthesis and characterization of 1T′ and 2H phase coexistence 2D Re1-xMoxS2 alloy films and their application for photodetectors

Alloying is considered an efficient strategy to engineer the crystal structure, modulate the energy band structure and charge carrier concentration by adjusting the elemental composition of transition metal dichalcogenides (TMDs). Here, the two-dimensional (2D) Re1-xMoxS2 alloy films with tunable composition and phase structure were prepared on mica substrates by chemical vapor deposition (CVD) method. The back-gated field effect transistors (FETs) based on 2D Re1-xMoxS2 alloy films were prepared. The Mo component x in 2D Re1-xMoxS2 alloy films was varied from 0, 0.2, 0.4, 0.5, 0.6, 0.8–1 by changing mole ratio of ReO3 to MoO3 while the total number of moles remains the same. The Mo composition-dependent morphology phase structure, electrical transport properties and photoelectric properties of Re1-xMoxS2 alloy films were studied in detail. The results indicate that the 1T′ phase Mo-doped ReS2 and 2H phase Re-doped MoS2 coexist, and the ratio of 2H phase Re-doped MoS2 to 1T′ phase Mo-doped ReS2 can be modulated by changing Mo component x in Re1-xMoxS2 alloy films. 1T′ phase Mo-doped ReS2 exhibits the p-type conduction feature while 2H phase Re-doped MoS2 shows the n-type conduction behavior. The Re1–xMoxS2 alloy devices show obvious photoelectric response to 405, 532, 635 and 808 nm lasers irradiation. The Re0.5Mo0.5S2 (x= 0.5) has the maximum responsivity R of 1024.1 mA/W and external quantum efficiency EQE of 239.3% under 532 nm laser irradiation.

N‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

AbstractThe family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n‐type conduction behavior and wide hysteresis at the ambient conditions. The device shows high mobility up to 28 cm2 V−1 s−1 with Ion/Ioff ratio over 103. Under the laser exposure, the device shows a decrease in the threshold voltage and a left‐shift of the transfer characteristic with a slight increase in the current. The transfer characteristic exhibits a hysteretic behavior with hysteresis width linearly dependent on the applied gate voltage. Moreover, the GaSe‐based FET shows a photo response with a photoresponsivity of 475 mAW−1 and detectivity of 4.6 × 1012 Jones. The photocurrent rise and decay times are 0.1 and 1.3 s, respectively. Furthermore, the GaSe FET device can be used as a performant memory device with well separated states and memory window enhanced by the laser exposure, confirming an optoelectronic memory class.

A WOx/MoOx hybrid oxide based SERS FET and investigation on its tunable SERS performance.

Active control of the surface-enhanced Raman scattering (SERS) enhancement shows great potential for realizing smart detection of different molecules. However, conventional methods usually involve time-consuming structural design or a sophisticated fabrication process. Herein, we reported an electrically tunable field effect transistor (FET) comprising a WOx/MoOx hybrid as the SERS active layer. In the experiment, WOx/MoOx hybrids were first prepared by mixing different molar ratios of WOx and MoOx oxides. Then, R6G molecules were used as Raman reporters, showing that the intensity of the SERS signal observed on the most optimal hybrids (molar ratio = 1 : 3) could be increased by two times as high as that observed on a single WOx or MoOx based substrate, which was ascribed to enhanced charge transfer efficiency by the constructed nano-heterojunction between the WOx and MoOx oxides. Thereafter, a back-gate FET was fabricated on a SiO2/Si substrate, and the most optimal WOx/MoOx hybrid was deposited as the gate channel and the SERS active layer. After that, a series of gate biases (from -15 V to 15 V) were implemented to actively tune the SERS performance of the FET. It is evident that the SERS EF can be further tuned from 2.39 × 107 (-15 V) to 6.55 × 107 (+10 V), which is ∼7.4/4.1 times higher than that observed on the pure WOx device (8.81 × 106) or pure MoOx (1.61 × 107) device, respectively. Finally, the mechanism behind the electrical tuning strategy was investigated. It is revealed that a positive voltage would bend the conduction band down, which increased the electron density near the Fermi level. Consequently, it triggered the resonance charge transfer and significantly improved the SERS performance. In contrast, a negative gate voltage attracted the holes to the Fermi level, which deferred the charge transfer process, and caused the reduction of the SERS enhancement.

Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures

Two-dimensional transition-metal dichalcogenides (TMDCs) have been pursued for high-performance logic electronic devices, and compatibility with silicon complementary metal-oxide-semiconductor (CMOS) technology is essential. Thus, high-quality material synthesis at reduced temperature is a key challenge for TMDC integration with the back-end-of-line silicon CMOS. In this work, TMDCs have been synthesized at temperatures down to 450 °C on SiO2/Si substrates via chemical vapor deposition. This work highlights the necessity of improving metal precursor mass flux during the low-temperature synthesis of TMDC films. Improved electrical characteristics of the back-gated p-type field-effect transistors based on monolayer WSe2 exhibit an on-current of 14 μA/μm and subthreshold swing of 200 mV/dec.

Ultrahigh responsivity of non-van der Waals Bi2O2Se photodetector

Bismuth oxyselenide has recently gained tremendous attention as a promising 2D material for next-generation electronic and optoelectronic devices due to its ultrahigh mobility, moderate bandgap, exceptional environmental stability, and presence of high-dielectric constant native oxide. In this study, we have synthesized single-crystalline nanosheets of Bismuth oxyselenide with thicknesses measuring below ten nanometers on Fluorophlogopite mica using an atmospheric pressure chemical vapor deposition system. We transferred as-grown samples to different substrates using a non-corrosive nail polish-assisted dry transfer method. Back-gated Bi2O2Se field effect transistors showed decent field effect mobility of 100 cm2 V−1s−1. The optoelectronic property study revealed an ultrahigh responsivity of 1.16 × 106 A W−1 and a specific detectivity of 2.55 × 1013 Jones. The samples also exhibited broadband photoresponse and gate-tunable photoresponse time. These results suggest that Bi2O2Se is an excellent candidate for future high-performance optoelectronic device applications.

The Effect of a Vacuum Environment on the Electrical Properties of a MoS2 Back-Gate Field Effect Transistor

Adsorption of gas molecules on the surface of two-dimensional (2D) molybdenum disulfide (MoS2) can significantly affect its carrier transport properties. In this letter, we investigated the effect of a vacuum environment on the electrical properties of a back-gate MoS2 FET. Benefiting from the reduced scattering centers caused by the adsorbed oxygen and water molecules in a vacuum, the current Ion/Ioff ratio of back-gate MoS2 field effect transistor increased from 1.4 × 106 to 1.8 × 107. In addition, the values of field effect carrier mobility were increased by more than four times, from 1 cm2/Vs to 4.2 cm2/Vs. Furthermore, the values of subthreshold swing could be decreased by 30% compared with the sample in ambient air. We demonstrate that the vacuum process can effectively remove absorbates and improve device performances.

Top-gate engineering of field-effect transistors based on single layers of MoS2 and graphene

Field-effect transistors (FETs) were fabricated with use of vertical heterostructures of graphene and MoS2 monolayers with top-gate and back-gate configurations. Nanodiamonds/poly(vinylidene difluoride) (1:1) and SiO2 were used as the top-gate and back-gate dielectric, respectively. The novel top-gate electrode and gate dielectric assembly consisting of polyaniline and nanodiamonds/poly(vinylidene difluoride) were synthesized by a chemical oxidative polymerization approach. Our MoS2 FETs showed a high linear mobility of approximately 212 cm2/V s and a high on/off current ratio of up to 107 at 10 V for top-gated FETs, which is much greater than for conventional back-gated FETs. The devices were stable under elevated temperatures up to 100 °C, with a decrease in the on/off current ratio. The devices showed good stability without any additional encapsulation after an elapsed time of 10 days, as the results on the first and tenth days were identical. This work will pave the way for the design of high-performance FETs for applications in electronics and optoelectronics.

Improving the optoelectronic properties of monolayer MoS2 field effect transistor through dielectric engineering

The reduced dielectric screening in atomically thin two-dimensional materials makes them very sensitive to the surrounding environment, which can be modulated to tune their optoelectronic properties. In this study, we significantly improved the optoelectronic properties of monolayer MoS2 by varying the surrounding environment using different liquid dielectrics, each with a specific dielectric constant ranging from 1.89 to 18. Liquid mediums offer the possibility of environment tunability on the same device. For a back-gated field effect transistor, the field effect mobility exhibited more than two-order enhancement when exposed to a high dielectric constant medium. Further investigation into the effect of the dielectric environment on the optoelectronic properties demonstrated a variation in photoresponse relaxation time with the dielectric medium. The rise and decay times were observed to increase and decrease, respectively, with an increase in the dielectric constant of the medium. These results can be attributed to the dielectric screening provided by the surrounding medium, which strongly modifies the charged impurity scattering, the band gap, and defect levels of monolayer MoS2. These findings have important implications for the design of biological and chemical sensors, particularly those operating in a liquid environment. By leveraging the tunability of the dielectric medium, we can optimize the performance of such sensors and enhance their detection capabilities.

Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo

Hysteresis effects and their tuning with electric fields and light were studied in thin film molybdenum disulfide transistors fabricated from sulfurized molybdenum films. The influence of the back-gate voltage bias, voltage sweep range, illumination, and AlOx encapsulation on the hysteresis effect of the back-gated field effect transistors was studied and quantified. This study revealed the distinctive contribution of MoS2 surface, MoS2/SiO2 interface defects and their associated traps as primary sources of of hysteresis.

Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

The key objective of this work was the comparison of MoS2 2-dimensional monolayer flakes grown by Chemical Vapour Deposition with different density gradients in the liquid precursors solution. Structures grown using solutions with iodixanol or glycerol were characterized by Optical Microscopy, Atomic Force Microscopy, Raman spectroscopy and Photoluminescence. Furthermore, electrical properties of structures were studied by characterizing backgated Field-Effect Transistors fabricated on individual flakes.The fundamental outcome of this study is that there are relevant differences between the structures grown with the two different liquid solutions: MoS2 structures grown with glycerol present a large variability in the lateral size of the sharp-corner triangular structure with a good crystalline quality while the employment of iodixanol (the most used substance) causes a poorer crystalline quality, demonstrated by the presence of nanometric pores, with a more homogeneous sizing of the triangular structures.The poor crystalline quality of the iodixanol samples results in reduced light emission efficiency and lower mobility.

Optically excited artificial synapse based on α-In2Se3 FETs on Ta2O5

Materials and devices for artificial synapses are being increasingly investigated owing to their promise for brain-inspired computing. Here, we demonstrate an optoelectronic synapse with a light-modulated memory capability in back-gated ferroelectric channel field-effect transistors made of multi-layered 2D α-In2Se3 on Ta2O5. The optical tunability is achieved by exploiting the frequency of the optical signal in vertically stacked layers of In2Se3, which generates a unique persistent photoresponse due to trapping at the In2Se3/Ta2O5 interface. For the 527 nm source wavelengths at intensities of 15 mW cm−2 the In2Se3-FET exhibits a high photoresponsivity at 850 AW−1. These devices can replicate synaptic functions such as photo-induced short-term memory, long-term memory and paired-pulse facilitation—all via optical modulation. We also demonstrate common memory effects that occur in the brain, such as memory loss and memory transitions that depend upon the stimulation rate (i.e., the interval between stimulation pulses). These demonstrations provide a simple and effective strategy for fabricating light-stimulated synaptic transistors with memory and learning abilities which are attractive for building vision-inspired neuromorphic systems.

Potassium-doped nano graphene as an intermediate layer for graphene electronics

To suppress the intrinsic carrier density and increase the carrier mobility in graphene on a silicon dioxide (SiO2) substrate, potassium (K)-doped nano graphene was introduced as an intermediate layer between the graphene layer and SiO2 substrate. Back-gate type graphene field effect transistors with four terminal structures were fabricated, and their electrical properties were measured under vacuum. The results showed that the Dirac point shifted from +9.0 to −0.2 V after inserting the K-doped nano graphene. The results suggested that inserting the intermediate layer compensated for the intrinsic holes and achieved an electron doping of 2 × 1012 cm−2. The field-effect mobilities of electrons and holes also increased because the ionized K-atoms in the intermediate layer shielded the electric force from the negatively charged impurities in SiO2. The K density was estimated using x-ray photoelectron spectroscopy to be 1.49 × 1013 cm−2, and the C1s peak shifted by 0.2 eV, which confirms the upward modulation of the graphene Fermi level by the K-doped nano graphene intermediate layer. These results demonstrated the advantages of the intermediate layer on the carrier density and mobility in graphene.

Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching.

Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one of the most promising candidates for low-power-density devices because of the extremely steep subthreshold swing and high open-state currents resulting from the addition of ferroelectric materials in the gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their ferroelectric properties were adjusted by changing the annealing temperature and the thickness of HZO. Two-dimensional MoS2 back-gate negative capacitance field-effect transistors (NCFETs) based on HZO were prepared as well. Different annealing temperatures, thicknesses of HZO thin films, and Al2O3 thicknesses were studied to achieve optimal capacitance matching, aiming to reduce both the subthreshold swing of the transistor and the hysteresis of the NCFET. The NCFET exhibits a minimum subthreshold swing as low as 27.9 mV/decade, negligible hysteresis (∼20 mV), and the ION/IOFF of up to 1.58 × 107. Moreover, a negative drain-induced barrier lowering effect and a negative differential resistance effect have been observed. This steep-slope transistor is compatible with standard CMOS manufacturing processes and attractive for 2D logic and sensor applications as well as future energy-efficient nanoelectronic devices with scaled power supplies.

Transferring 2D TMDs through water-soluble sodium salt catalytic layer

This study reports a clean and damage-free transfer method that enables the ultrafast transfer of two-dimensional (2D) transition metal dichalcogenides (TMDs) onto desired substrates with a remarkably high yield. We employ a water-soluble sodium salt as both a transfer sacrificial layer for facile transfer and a catalytic layer for the growth of high-quality large-area MoS2 using liquid-phase chemical vapor deposition via a catalyzed kinetic growth. We show that the pristine structural and electrical properties of the grown MoS2 can be reliably preserved by avoiding detrimental effects during the prolonged harsh-environment transfer process. We demonstrate the technological versatility of the proposed transfer method by fabricating as-transferred MoS2-based back-gated field-effect transistors (FETs). The MoS2 FETs exhibit excellent charge mobility as high as 28.7 cm2 V−1 s−1 and an on–off ratio up to ∼107 at room temperature, indicating no performance degradation after the transfer process. The proposed transfer method offers universal applicability for various 2D TMDs, mechanical supporting polymers, and target substrates, thus facilitating the facile fabrication of 2D TMD-based electronics and optoelectronics.

α-In2Se3 Nanostructure-Based Photodetectors for Tunable and Broadband Response

The strong thickness-dependent narrow direct band gap of few-layer α-In2Se3 makes it a promising candidate for high-performance photodetectors. However, few researchers focus on the relationship between thickness and optoelectronic characteristics, and most results are based on the mechanically exfoliated α-In2Se3 nanoflakes. Herein, a reliable physical vapor deposition strategy to grow α-In2Se3 nanosheets with tunable thickness and submillimeter scale is reported. High-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) studies confirmed the high-quality growth of α-In2Se3 nanosheets. The back-gate field-effect transistors on SiO2 substrates display n-type semiconductor behavior. A systematical investigation of the optoelectronic properties reveals a thickness-dependent broadband response from visible (447 nm) to near-infrared (1550 nm) wavelengths with better and excellent performance obtained in thicker α-In2Se3 nanosheets than that in thinner devices. More importantly, a great improvement of the responsivity, detectivity, and external quantum efficiency (EQE) can be achieved by changing the thickness of In2Se3. The photodetector exhibits an outstanding photoresponsivity of 347.6 A/W, an ultrahigh detectivity of 1.5 × 1013 Jones, and an external quantum efficiency of 8.3 × 104%, which is superior to several α-In2Se3 nanostructure- or other two-dimensional (2D)-based photodetectors. The thickness-dependent broadband response characteristics make the α-In2Se3 nanostructure a promising candidate for multifunctional optoelectronic device applications.

Three-Dimensional MoS2 Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties

The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process. The distinctive signals of MoS2 were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS2 nature. The FIB cross-sectional analysis provided information on the origin and evolution of the vertical MoS2 structures and their growth mechanisms. The strain energy produced by the compression between MoS2 islands is assumed to primarily drive the formation of vertical MoS2 nanosheets. In addition, vertical MoS2 structures that emerge from micro fissures (cracks) on individual MoS2 islands were observed and examined. For the evaluation of electrical properties, field-effect transistor structures were fabricated on the synthesized material employing standard semiconductor technology. The lateral back-gated field-effect transistors fabricated on the synthesized material showed an n-type behavior with field-effect mobility of 1.46 cm2 V−1 s−1 and an estimated carrier concentration of 4.5 × 1012 cm−2. Furthermore, the effects of a back-gate voltage bias and channel dimensions on the hysteresis effect of FET devices were investigated and quantified.

A Smart Measurement System for the Combined Nanoscale and Device Level Characterization of Electron Devices: Implementation Using Ink-Jet Printing Technologies

In this article, the integration into a single measurement system of device level and nanoscale measurement equipment is presented and applied to the electrical characterization of emerging electron devices. This system is a smart solution to simplify the test procedure, since it allows a fast switching between measurement modes (device or nanoscale level), also featuring an enlarged testing capability. Key in the system is a custom-made inkjet-printed circuit board (I-PCB) that connects the device terminals to the proper instrumentation. The flexibility offered by inkjet-printing technologies is a clear advantage, since many kinds of devices can be tested, without the need of expensive hardware modifications. As a particular case of study, the proposed strategy is demonstrated by implementing a system that alternates between standard electrical measurements with a Semiconductor Parameter Analyzer (SPA) and Conductive Atomic Force Microscopy (CAFM) nanoscale measurements on back-gate graphene field-effect transistors.

Synthesis of violet phosphorus with large lateral sizes to facilitate nano-device fabrications.

Violet phosphorus has been proven to be the most stable phosphorus allotrope and has attracted much attention recently. The growth of violet phosphorus with large lateral sizes is crucial to obtain good quality violet phosphorene for nanodevice fabrication. Herein, a large number of violet phosphorus plates have been produced from molten lead using an optimized method to achieve red bronze luster. The crystal structure of the as-produced violet phosphorus was determined by single-crystal X-ray diffraction to be monoclinic with the space group P2/n (13) (CSD-2160375), identical to the one from the chemical vapor transport method (CSD-1935087). The as-produced violet phosphorus plates were found to have lateral sizes of 1.30 ± 0.41 mm2. The violet phosphorus plates were easily exfoliated and directly transferred to silicon substrates to facilitate building of a back-gate field-effect transistor. A hole mobility of 2.308 cm2 V-1 s-1 was obtained from a violet phosphorus nanosheet with a thickness of 52 nm under ambient conditions. The absolute responsivity of 130 mA W-1 with a fast response time of 27 ms was also obtained under the irradiation of a 530 nm laser.

An individual ZnO microwire homojunction LED with ultraviolet electroluminescence spectrally purified using Pt nanoparticles cladding

Low-dimensional ultraviolet light sources are enormous significance due to their wide range of potential applications, ranging from bioscience and high-resolution biological imaging, environmental conservation to public hygiene. Nevertheless, developing energy-efficient and cost-efficient light sources still remains serious challenges. In this study, p-type ZnO microwires with Sb-incorporation (ZnO:Sb MWs) were synthesized individually. The p-type conductivity was proofed using an individual MW based back-gated field-effect transistor; while the ZnO:Sb MWs with quadrilateral cross-section exhibited stimulated emission resonant in well-defined Fabry-Perot mode on the benefit of single-crystalline quality and atomically smooth side facets. The newly synthesized ZnO:Sb MW was further used to fabricate homojunction light-emitting device by employing n-type ZnO film as electron-transporting layer. A strong ultraviolet emissions peaking at around 378.5 nm was achieved upon forward biased electrically, but illustrating much broader electroluminescence (EL) linewidth. Introducing Pt nanoparticles (PtNPs) with desired plasmons, the light-out intensity is significantly enhanced. Particularly, the broad EL profiles narrowed to about 16.6 nm at high injection regime, achieving electron-holes radiative recombination in the ZnO:Sb MWs active region. The results exhibit a prominent progress achieving high-quality ZnO nano/microstructures with genuine p-type conductivity, which has great hopes for its future applications and development in ZnO homojunction optoelectronic devices.