Backscattering Raman Spectroscopy Research Articles

APPLICATION OF SPECTROSCOPIC METHODS FOR THE AUTHENTICATION OF AGRICULTURAL PRODUCTS OF VIETNAM: A STUDY OF ST25 RICE

Food fraud, particularly in staple commodities like rice, poses significant risks to trademark protection as well as economic challenges. In this study, we explored the efficacy of Raman spectroscopy in differentiating authentic ST25 rice—a premium variety of Vietnam from other rice types, amidst concerns of adulteration. By utilizing both backscattering and transmission Raman spectroscopy, a total of 125 rice samples consisting of both commercial rice and Vietnamese landrace rice varieties were analyzed. All samples were categorized into two main groups namely ST25 and Non-ST25 for the construction of the classification model. Through principal component analysis (PCA) and k-nearest neighbors (kNN) classification method, we achieved classification accuracies of 81.58% for backscattering data and up to 97.37% for transmission data at elevated temperatures. Our findings highlight the efficacy of Raman spectroscopy for rice authenticity verification, nevertheless, modification in spectral measurement schemes is necessary to obtain better method reproducibility as well as to maintain high discriminatory accuracy of the classification model.

Study of the effect of implantation temperature on the migration behaviour of Xe implanted into glassy carbon.

The effect of implantation temperature on the migration behaviour of xenon (Xe) implanted into glassy carbon and the effect of annealing on radiation damage retained by ion implantation were investigated. Glassy carbon substrates were implanted with 320keV Xe+ to a fluence of 2×1016cm-2. The implantation process was performed at room temperature (RT) and 100°C Some of the as-implanted samples were isochronally annealed in vacuum at temperatures ranging from 300°C to 700°C in steps of 100°C for 10h. The as-implanted and annealed samples were characterized using Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. The RT implanted depth profiles indicated that the migration of Xe towards the surface of glassy carbon was accompanied by a loss of Xe ions. The samples implanted at 100°C indicated no diffusion or loss of Xe after annealing at 300°C. However, annealing at temperatures ranging from 400°C to 700°C resulted in a slight shift in the Xe profile tail-end towards the bulk of glassy carbon. The diffusion coefficients (D) in the temperature range of 300°C-700°C for the RT and 100°C implanted samples, activation energies (Ea), and pre-exponential factors (Do), were extracted. The values of D ranged from (9.72±0.48)×10-21 to (1.87±0.09)×10-20m2/s with an activation energy of (6.25±0.31)×10-5eV for RT implanted samples, and the samples implanted at 100°C, D ranged from (3.85±0.19)×10-21 to (6.96±0.34)×10-20m2/s with activation energy of (4.10±0.02)×10-5eV. The Raman analysis revealed that implantation at the RT amorphised the glassy carbon structure while the samples implanted at 100°C showed mild damage compared to RT implantation. Annealing of the RT-implanted sample resulted in some recovery of the damaged region as a function of increasing annealing temperature.

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress applied in the [001], [110] and [111] directions. The calculated band gap reductions are equal to 126, 240 and 100 meV at 2% strain, respectively. Photoluminescence spectroscopy experiments are performed by deformation applied in the [110] direction. Microfabricated specimens have been deformed using an on-chip tensile technique up to ∼1% as confirmed by back-scattering Raman spectroscopy. A fitting correction based on the band gap fluctuation model has been used to eliminate the specimen interference signal and retrieve reliable values. Very good agreement is observed between first-principles theory and experimental results with a band gap reduction of, respectively, 93 and 91 meV when the silicon beam is deformed by 0.95% along the [110] direction.

Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals embedded in SiO2 films seem to be among the best candidates. However, the charges generated in the dielectric film are hard to collect. For this reason, it would be better if the charges were generated in a semiconductor matrix such as silicon, which has better conductivity. However, implanted Ge atoms have poor mobility in a silicon matrix and thus Ge nanocrystals formation is not likely. But even if the formation of Ge nanocrystals seems difficult, it would still be interesting to form crystalline Si1-xGex alloys. This work investigates the formation of the Si1-xGex films by ion implantation and their crystallinity. 36 keV Ge ions were implanted in crystalline Si substrates, with fluences ranging from 5 × 1015 to 1.5 × 1017 Ge/cm2 at temperatures up to 600 °C. Rutherford Backscattering Spectrometry (RBS), Raman Spectroscopy, and Transmission Electron Microscopy (TEM) were used to investigate the microstructure of the Si1-xGex alloys. It is shown that germanium is mostly incorporated in the crystal network in substitutional sites. XRD, Raman spectroscopy, and TEM confirm that the Si1-xGex layer on top of the c-Si substrate is monocrystalline. TEM also indicates the possible presence of nanostructures, extended defects or both. Implantation was also carried out at temperatures up to 600 °C, with the objective of preserving the crystallinity and promoting Ge diffusion into nanoclusters. RBS shows that the Ge profile is more extended in depth for the sample implanted at 600 °C, compared to a room temperature implantation. As the energy of the ions is the same in both samples, this indicates that Ge is able to diffuse in depth during the implantation at 600 °C compared to implantation at ambient temperature. However, RBS/C shows that the minimal yield is higher for the implantation at 600 °C, indicating a high concentration of interstitials or that crystallinity is deteriorated, as confirmed by TEM.

Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance

We report a novel method of producing composite substrates by growing diamond films on a 4H–SiC substrate by microwave plasma chemical vapor deposition to enhance the thermal management for thermal diffusion applications in GaN-based RF power devices. Morphology, grain orientation and structure of the diamond films were characterized by scanning electron microscopy, electron backscatter diffraction, X-ray diffraction and Raman spectroscopy. The diamond films were uniform and compact, without voids and gaps observed via cross-sectional view of microscopy, and without any graphite phase and impurity peak. Thermal conductivity (TC) of the diamond-SiC composite substrates was simulated and calculated. Results indicate that the TC of the composite substrates is up to 512.02 ± 6.37 W m−1 K−1 when the SiC thickness is 500 μm, which is 1.53 ± 0.02 times of the pure SiC substrate, and this high TC increases to 1171.13 ± 67.23 W m−1 K−1 after the 4H–SiC substrate is thinned down to 50 μm. The coefficient of thermal expansion (CTE) of the composite substrates can be engineered by changing the thickness of SiC substrate.

Raman strain–shift measurements and prediction from first-principles in highly strained silicon

This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon (Si). Structural relaxation of a strained primitive cell is first performed to tackle the relative displacement of the Si atoms for each strain level. Density functional perturbation theory is then used to compute the energy of the optical phonon modes in highly strained Si and retrieve the strain–shift trend. The simulations are validated by experimental characterization, using scanning electron microscopy (SEM) coupled with backscattering Raman spectroscopy, of silicon microbeams fabricated using a top-down approach. The beams are strained up to 2% thanks to the internal tensile stress of silicon nitride (Si3N4) actuators, allowing a validation of the perturbation theory in high-strain conditions. The results are compared with the phonon deformation potentials theory, and the uncertainty caused by the various parameters found in the literature is discussed. The simulated strain–shift coefficients of $$-175.77\,{\text {cm}}^{-1}$$ (resp. $$-400.85\,{\text {cm}}^{-1}$$ ) and the experimental one of $$-160.99\,{\text {cm}}^{-1}$$ (resp. $$-414.97\,{\text {cm}}^{-1}$$ ) are found for the longitudinal optical LO (resp. transverse optical TO $$_{1}$$ ) mode, showing good agreement.

Backscattering and transmission Raman spectroscopy systems in the quantitative analysis concentration of acetone solutions

Raman spectroscopy is a set of techniques based on Raman scattering properties, widely applied to analyze the composition of various substances. The techniques consist of 1) backscattering, which collects Raman signals scattered from the surface of a sample; and 2) transmission, which collects Raman signals transmitted by the surface of a sample in the opposite direction of a light source (which triggers less fluorescence than backscattering). In this paper, we will measure the Raman spectrum of acetone solution by the transmission Raman spectroscopy and the backscattering Raman spectroscopy systems that we set up. Those accessories we use are a 532-nanometer diode laser with 100 milliwatt power as the light source, a focusing lens, an objective lens used for amplifying the Raman signals scattered from the sample, and a long-pass filter used to block light with a wavelength shorter than 532 nanometers. For the experimental samples, there are acetone solutions each prepared at 1M, 3M, 5M, 7M, 9M, 11M, and 13M. In the results of this experiment, we found that the intensity of Raman peaks for each Raman shift of acetone and the molar concentrations of acetone measured by both systems have a linear function in the backscattering Raman system and have a quadratic function in the transmissions Raman system because in backscattering system have noise by fluorescence effect more than in transmission system and it might be the effect of the Beer-Lambert law.

Turtle eggs from the Lower Cretaceous Hasandong Formation (South Korea) with relict aragonite under significant thermal maturity

ABSTRACT Unlike the eggshells of other amniotes, turtle eggshells are composed of aragonite, which is a metastable mineral. Turtle eggshells in the fossil record are therefore usually transformed to calcite. Geothermal heat also negatively affects the preservation of aragonite, and therefore the preservation of aragonite under geothermal settings is not usually expected. Here we report new turtle eggs from the Lower Cretaceous (Aptian–Albian) Hasandong Formation of South Korea, describing the morphological features of the eggs and eggshells. The eggs belong to an oogenus Testudoolithus with the smallest recorded egg size. As one of the oldest fossil eggs from Korea, this material fills a paleobiogeographic gap in the fossil record of turtle eggs in East Asia, which has limited records for the eggs of non-dinosaurian reptiles. More importantly, the presence of relict aragonite was cross-validated by electron backscatter diffraction and Raman spectroscopy. The Raman spectra of the thermally altered organic matter inside the eggshells indicated that the eggs experienced a maximum temperature of almost 260°C during their taphonomic history. This implies that aragonite can be preserved even under hostile thermal conditions and earlier reports of ‘calcite-only’ turtle fossil eggs may preserve undetected relict aragonite, which is only detectable via careful investigation using advanced microscopic techniques. The combined use of mineralogical and spectroscopic approaches adopted in this study may also be useful to invertebrate paleontology and archeology to further understand the relationship between the preservation of aragonite and the maximum paleotemperature that the materials experienced.

Nickel Site Modification by High-Valence Doping: Effect of Tantalum Impurities on the Alkaline Water Electro-Oxidation by NiO Probed by Operando Raman Spectroscopy.

In an effort to support the large-scale implementation of clean hydrogen in industry and society, the electrolytic decomposition of water is considered a realistically enticing prospect, provided the guarantee of affordable and durable material components. Within alkaline systems, earth-abundant electrocatalysts could provide both these requirements. However, a continued exploration of the reactivity and the causes behind different behaviors in performance are necessary to guide optimization and design. In this paper, Ta-doped NiO thin films are prepared via DC magnetron sputtering (1–2–4 at % Ta) to demonstrate the effect of surface electronic modulation by non-3d elements on the catalysis of the oxygen evolution reaction (OER). Material properties of the catalysts are analyzed via Rutherford backscattering spectrometry, X-ray diffractometry, photoelectron spectroscopy, and Raman spectroscopy. Ta impurities are shown to be directly responsible for increasing the valence state of Ni sites and enhancing reaction kinetics, resulting in performance improvements of up to 64 mV at 10 mA cm–2 relative to pristine NiO. Particularly, we show that by applying operando Raman spectroscopy, Ta enhances the ability to create high-valence Ni in γ-NiOOH at a lower overpotential compared to the undoped sample. The lowered overpotentials of the OER can thus be attributed to the energetically less hindered advent of the creation of γ-NiOOH species on the pre-catalyst surface: a phenomenon otherwise unresolved through simple voltammetry.

A comparative study of applying backscattering and transmission Raman spectroscopy to quantify solid-state form conversion in pharmaceutical tablets

Selecting appropriate Raman measurement and data processing method are of importance to enable effective quantification of solid form conversions upon processing or storage. Therefore, a comparative evaluation is presented herein on using backscattering and transmission Raman spectroscopy to quantify salt disproportionation in tablet matrices. The second part focuses on different spectra processing approaches and calibration models for quantifications. Finally, samples under different mechanical stresses were comprehensively analyzed using different Raman measurements. Much as transmission Raman spectrometry may provide accuracy on bulk measurements by having large sampling volume, it has the drawback of signal attenuation and may overlook process-induced phase transitions occurring on local regions of tablet surface. To overcome this limitation, backscattering Raman with deliberate subsampling can be used as an orthogonal method to probe the existence of low-level form conversion distributed over a tablet’s surface. In the present case, different levels of the form conversions were found at the edge and the center of tablets due to the uneven shear stress distribution invoked during tablet compression. In such a scenario, it would be beneficial to apply deliberate-focused backscattering and transmission Raman spectrometry together as complementary techniques to capture chemical information both locally and within the bulk of the tablet.

Gachingite, Au(Te1–xSex) 0.2 ≈ x ≤ 0.5, a new mineral from Maletoyvayam deposit, Kamchatka peninsula, Russia

AbstractGachingite, Au(Te1–xSex), 0.2 ≈ x ≤ 0.5, is a new mineral discovered in the Gaching ore occurrence of the Maletoyvayam epithermal deposit, Kamchatka, Russia. Gachingite forms individual droplet-like grains of sizes from 2 to 10 μm included in native gold (Au–Ag), associated with calaverite, maletoyvayamite, watanabeite and Au–Sb oxides. The aggregates do not exceed 100 μm in diameter. In plane-polarised light, gachingite is grey with a bluish tint, has bireflectance (bluish-grey to deep grey), and strong anisotropy with rotation tints blue to dark blue to brown. Reflectance values for gachingite in air (Rmin, Rmax in %) are: 39.9, 40.3 at 470 nm; 41.6, 43.3 at 546 nm; 42.0, 43.7 at 589 nm; and 43.0, 44.0 at 650 nm. Eighteen electron-microprobe analyses of gachingite gave an average composition: Au 62.40, Ag 0.57, Se 9.78, Te 27.33 and S 0.01, total 100.09 wt.%, corresponding to the formula (Au0.96Ag0.02)Σ0.98(Te0.65Se0.37)Σ1.02 based on 2 apfu, the simplified formula is Au(Te0.65Se0.35); the average analyses of its synthetic analogue is Au 65.7, Se 13.1 and Te 21.1, total 99.9 wt.%, corresponding to Au1.00(Te0.50Se0.50). The calculated density is 10.47 g/cm3. The mineral is orthorhombic, space group Cmce (#64) with a = 7.5379 Å, b = 5.7415 Å, c = 8.8985 Å, V = 385.12 Å3 and Z = 8. The crystal structure was solved and refined from the single-crystal X-ray-diffraction data of synthetic Au1.00(Te0.50Se0.50). The crystal structure of gachingite represents a unique structure type, containing linear [Au–Au–Au] chains running along the b-axis indicating strong metallic interaction in one direction. The structural identity of gachingite and its synthetic analogue Au1.00(Te0.50Se0.50) was confirmed by electron back-scatter diffraction and Raman spectroscopy. The formation of gachingite requires an abundant source of Au and Se and a high oxidising environment. Gachingite is related to the gold-bearing productive stage of ore mineralisation, which is stable at 250°C in log$f_{{\rm S}{\rm e}_ 2}$ range of −12.4 and −5.7. The mineral is named after its type locality.

Preservation of aragonite in Late Cretaceous (Campanian) turtle eggshell

Among amniotes, turtles are the only clade that lay aragonitic eggs. Because aragonite is a metastable mineral, unequivocal preservation of aragonite in fossil turtle eggs has only been reported from Pliocene deposits. Here, we report in situ preservation of aragonite in a turtle egg from the Judith River Formation (Campanian) of Montana, USA. We utilized electron backscatter diffraction (EBSD) and Raman spectroscopy to explore the carbonate mineral polymorphs in the eggshell. The EBSD maps show the presence of both aragonite and calcite with the former preserved as needle-like crystal, a feature of all turtle eggshells. The presence of aragonite is independently validated by Raman maps. This dual approach provides direct, unambiguous evidence that the record of aragonitic turtle eggshell dates back at least to the Campanian (ca. 76 Ma) and supports the hypothesis that aragonitic eggshell is a synapomorphy of all turtles. The presence of pristine aragonite also indicates minimal taphonomic alteration at the fossil locality. Consequently, diverse invertebrate or vertebrate fossils from localities with aragonitic turtle eggs may provide high quality, unaltered palaeoenvironmental information. • A Late Cretaceous turtle egg preserves aragonite. • EBSD and Raman spectroscopy provide independent approach. • It supports the view that aragonitic egg is synapomorphic to all Testudinata. • Judith River Formation and its equivalent strata may preserve more aragonitic fossils.

Surface Integrity of Diamond Turned (100)Ge

The resulting surface integrity of (100)Ge subjected to off-axis single point diamond turning was investigated. Feedrate was varied using 9 and 20 μm/rev at 10 μm nominal depth of cut. Surface topography was measured with coherence scanning interferometry and atomic force microscopy. The resulting near surface lattice disorder was investigated with channeling Rutherford Backscattering Spectrometry and Raman Spectroscopy. Measured near surface lattice disorder was quantified in terms of equivalent amorphous layer thickness and minimum channeling yield. A comparison of the resulting surface integrity was made with surfaces created by chemomechanical polishing and magnetorheological finishing.

The Effect of the Deposition Method on the Structural and Optical Properties of ZnS Thin Films

ZnS is a wide band gap material which was proposed as a possible candidate to replace CdS as a buffer layer in solar cells. However, the structural and optical properties are influenced by the deposition method. ZnS thin films were prepared using magnetron sputtering (MS), pulsed laser deposition (PLD), and a combined deposition technique that uses the same bulk target for sputtering and PLD at the same time, named MSPLD. The compositional, structural, and optical properties of the as-deposited and annealed films were inferred from Rutherford backscattering spectrometry, X-ray diffraction, X-ray reflectometry, Raman spectroscopy, and spectroscopic ellipsometry. PLD leads to the best stoichiometric transfer from target to substrate, MS makes fully amorphous films, whereas MSPLD facilitates obtaining the densest films. The study reveals that the band gap is only slightly influenced by the deposition method, or by annealing, which is encouraging for photovoltaic applications. However, sulphur vacancies contribute to lowering the bandgap and therefore should be controlled. Moreover, the results add valuable information towards the understanding of ZnS polymorphism. The combined MSPLD method offers several advantages such as an increased deposition rate and the possibility to tune the optical properties of the obtained thin films.

Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5.

Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron sputtering (MS), pulsed laser deposition (PLD) and a deposition technique that combines MS and PLD, namely MSPLD. In the MSPLD technique, the same bulk target is used for sputtering but also for PLD at the same time. The structural and optical properties of the as-deposited and annealed thin films were characterized by Rutherford backscattering spectrometry, X-ray reflectometry, X-ray diffraction, Raman spectroscopy and spectroscopic ellipsometry. MS has the advantage of easily leading to fully amorphous films and to a single crystalline phase after annealing. MS also produces the highest optical contrast between the as-deposited and annealed films. PLD leads to the best stoichiometric transfer, whereas the annealed MSPLD films have the highest mass density. All the as-deposited films obtained with the three methods have a similar optical bandgap of approximately 0.7 eV, which decreases after annealing, mostly in the case of the MS sample. This study reveals that the properties of GST-225 are significantly influenced by the deposition technique, and the proper method should be selected when targeting a specific application. In particular, for electrical and optical phase change memories, MS is the best suited deposition method.

Electronic and optical properties of Zn-doped β-Ga2O3 Czochralski single crystals

β-Ga2O3 has several soluble deep acceptors that impart insulating behavior. Here, we investigate Zn doping (0.25 at. %) in bulk Czochralski and vertical gradient freeze β-Ga2O3. Representative crystals were assessed for orientation (electron backscatter diffraction and Raman spectroscopy), purity (glow discharge mass spectrometry and secondary ion mass spectrometry), optical properties (ultraviolet to near infrared absorption), and electrical properties (resistivity and current–voltage). Purity measurements indicate that Zn evaporation is insufficient to inhibit doping of Zn into β-Ga2O3. Hybrid functional calculations show Zn substitutes nearly equally on tetrahedral and octahedral sites, with less than ∼0.1 eV preference for the octahedral (GaII) site. Furthermore, calculations show that ZnGa acts as a deep acceptor with trapping levels ∼1.3 and ∼0.9 eV above the valence band for one and two holes, respectively. The solubility and electronic behavior of Zn dopants are consistent with measured concentrations >1 × 1018 atoms/cm3 and electrical measurements that show resistivity 1011–1013 Ω cm, with no p-type conduction.

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Silicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.

Laser-treatment-induced morphology and structure modifications of stainless steel: Element segregations and phase evolutions

The effect of laser treatments on the surface of stainless steel (SS420) has been studied by employing topographic mapping, X-ray fluorescence (XRF), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman backscattering spectroscopy, addressing the morphological and structural modifications. The treatments were processed in air atmosphere with varied laser-scanning speed from VL = 40 to 5 mm/s while keeping the laser power constant at 400 W. The topographic evolutions reveal an onset of surface melting when VL is reduced approaching 20 mm/s while the structural evolutions provide evidence for element redistributions and phase changes in the surface layer of the SS420 plates. The element redistributions occur not only along the transverse direction in the individual laser-scanning tracks but also along the thickness direction between the surface layer of a few nanometers thick and the near-surface layer of a few micrometers thick while the phase structures are strongly associated with the spatial redistributed elements and their oxidations. The surface melting and its VL-dependent Marangoni convections in the melt pool are believed to redistribute the elements at elevated temperatures that, in turn, give rise to the phase evolutions of the surface oxides.

Bone quality analysis of jaw bones in individuals with type 2 diabetes mellitus-post mortem anatomical and microstructural evaluation.

With the higher risk of dental implant failure with type 2 diabetes mellitus (T2DM), there is a need to characterize the jaw bones in those individuals. The aim of this post mortem study was to compare jaw bone quality of individuals with T2DM to healthy controls. Bone cores from the edentulous lower first molar region and the region of mandibular angle were collected from male individuals with T2DM (n = 10, 70.6 ± 4.5years) and healthy controls (n = 11, 71.5 ± 3.8years) during autopsy. Within the T2DM, a subgroup treated with oral antidiabetics (OAD) and one on insulin were identified. Bone quality assessment encompassed evaluation of bone microstructure, matrix composition, and cellular activity, using microcomputed tomography (micro-CT), quantitative backscattered electron imaging (qBEI), Raman spectroscopy, and bone histomorphometry. In the mandibular angle, T2DM showed 51% lower porosity of the lingual cortex (p = 0.004) and 21% higher trabecular thickness (p = 0.008) compared to control. More highly mineralized bone packets were found in the buccal cortex of the mandibular angle in insulin-treated compared to OAD-treated T2DM group (p = 0.034). In the molar region, we found higher heterogeneity of trabecular calcium content in T2DM insulin compared to controls (p = 0.015) and T2DM OAD (p = 0.019). T2DM was associated with lower osteocyte lacunar size in the trabecular bone of the molar region (vs. control p = 0.03). Alterations in microstructure, mineralization, and osteocyte morphology were determined in jaw bone of individuals with T2DM compared to controls. Future studies will have to verify if the mild changes determined in this study will translate to potential contraindications for dental implant placements.