The bonding and electronic structure of TiN thin films grown by sputtering have been characterized by means of resonant photoemission spectroscopy using synchrotron radiation. Specifically we found a complex resonance profile that exhibits a maximum at 45 eV followed by a second structure at 50 eV. The intensity enhancement observed at 45 and 50 eV is consistent with the resonant photoemission of the Ti $3d$ states involved in the valence band of TiN and the multiplet configuration of the $[\mathrm{Ti}{3p}^{5}{3d}^{2}{]}^{*}$ excited states. The autoionizing character of the $[\mathrm{Ti}{3p}^{5}{3d}^{2}{]}^{*}$ states could also be confirmed by observation of the corresponding autoionization emission. The resonance is used to determine the Ti $3d$ contribution to the valence band. The results are in good agreement with calculated Ti $3d$ partial density of states.
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