Auger Heating Research Articles

Adiabatic weak coherent MHz linewidth O-band single-photon carrier for low erroneous phase decoding

For weak coherent single-photon secure data communication among short-reach metropolitan intra-/inter-city networks at the O-band (1250-1350 nm), the commercially available semiconductor laser sources are emerging but still suffering from high single-mode-fiber (SMF) loss, broad linewidth, and unstable wavelength. To overcome such disadvantages for enabling the efficient phase-coding link with sufficient secure key rate, a specifically designed adiabatic package with active temperature-/current-feedback control is proposed for the paired O-band MHz-linewidth master-to-slave injection-locked DFBLDs and a polarization-maintaining 1-bit-delay interferometer is stabilized with using a passively adiabatic cell to achieve accurate differential phase decoding. Even though, the phonon-induced phase fluctuation still occurs at rising and falling edges of the decoded long-pattern secure data bits delivered from the slave DFBLD, which is mainly attributed to the intra-cavity heating under excessive free-carrier generation via the master DFBLD injection. To stabilize the differential-phase-shift (DPS) keying protocol, the phase-code distortion caused by over-injection-induced Auger heating is effectively suppressed by reducing the overly biased injection with precise master-injection-level control. The rising-/falling-edge damping distortion of the phase-shift-encoded secure bit-stream envelope is suppressed by appropriately decreasing the DC bias current and adjusting the AC encoding amplitude of the master DFBLD. Such operation reduces the incorrect π phase shift in the injection-locked slave DFBLD biased at optimized below-threshold DC offset, thus allowing single-photon DPS-keying data transmission over 15-km SMF with slightly increasing the single-photon bit-error ratio from <3% (0-km) to 6.2% (15-km).

Making and Breaking of Exciton Cooling Bottlenecks in Halide Perovskite Nanocrystals.

Harnessing quantum confinement (QC) effects in semiconductors to retard hot carrier cooling (HCC) is an attractive approach for enabling efficient hot carrier extraction to overcome the Shockley-Queisser limit. However, there is a debate about whether halide perovskite nanocrystals (PNCs) can effectively exploit these effects. To address this, we utilized pump-probe and multipulse pump-push-probe spectroscopy to investigate HCC behavior in PNCs of varying sizes and cation compositions. Our results validate the presence of an intrinsic phonon bottleneck with clear manifestations of QC effects in small CsPbBr3 PNCs exhibiting slower HCC rates compared to those of larger PNCs. However, the replacement of inorganic Cs+ with organic cations suppresses this intrinsic bottleneck. Furthermore, PNCs exhibit distinct size-dependent HCC behavior in response to changes in the cold carrier densities. We attribute this to the enhanced exciton-exciton interactions in strongly confined PNCs that facilitate Auger heating. Importantly, our findings dispel the existing controversy and provide valuable insights into design principles for engineering QC effects in PNC hot carrier applications.

Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films

As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.

Evidence of auger heating in hot carrier cooling of CsPbBr3 nanocrystals

Hot Carrier (HC) Dynamics in Lead halide perovskites shows a unique hindered hot carrier cooling. In the present study, we use femtosecond transient absorption technique to interrogate CsPbBr3 to study the role of different carrier cooling mechanisms in HC cooling process. This is accomplished here by considering fitting of the high-energy region of photoinduced bleach with a Fermi-Dirac distribution instead of Maxwell-Boltzmann Distribution. This approach reveals important time dependent parameters like quasi fermi level, apart from carrier temperature. Under low carrier densities with N < <1, the dynamics revealed bleach recovery in time scales > 1 ns revealing dynamics is governed by electron-hole radiative recombination. The HC cooling dynamics under low carrier density (2 *1017/cm3) revealed the cooling is predominantly dominated by short lifetime component of ~0.26 ps. This time is significantly elongated as compared to lifetime of longitudinal optic (LO) phonon lifetime in perovskites, clearly indicative of Froehlich interaction in play along with large polaron formation. However, under higher carrier densities > 1018/cm3, additional lifetime component contributes to HC cooling with a time constant of ~17 ps. This time constant could be assigned to Auger heating. The role of LO phonon filling and Auger heating was ascertained also on the basis energy loss rate vs carrier temperature fitting with these individual cooling models. To ascertain the role of Auger heating we also used different sized samples which showed the scaling of Auger heating times in agreement with size dependent Auger recombination times as reported in the literature. Such long HC cooling opens avenues to possibly extract hot carriers before cooling leading to development of HC photovoltaics.

Manipulation of hot carrier cooling dynamics in two-dimensional Dion\u2013Jacobson hybrid perovskites via Rashba band splitting

Hot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

Dynamic lattice distortions driven by surface trapping in semiconductor nanocrystals

Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in such materials are not understood. Here, femtosecond electron diffraction measurements corroborated by atomistic simulations uncover transient lattice deformations accompanying radiationless electronic processes in colloidal semiconductor nanocrystals. Investigation of the excitation energy dependence in a core/shell system shows that hot carriers created by a photon energy considerably larger than the bandgap induce structural distortions at nanocrystal surfaces on few picosecond timescales associated with the localization of trapped holes. On the other hand, carriers created by a photon energy close to the bandgap of the core in the same system result in transient lattice heating that occurs on a much longer 200 picosecond timescale, dominated by an Auger heating mechanism. Elucidation of the structural deformations associated with the surface trapping of hot holes provides atomic-scale insights into the mechanisms deteriorating optoelectronic performance and a pathway towards minimizing these losses in nanocrystal devices.

Investigation of Hot Carrier Cooling Dynamics in Monolayer MoS2

The hot carrier cooling dynamics in the C-excitonic state of monolayer MoS2 is slowed down by the hot phonon bottleneck and Auger heating effects, as exploited by ultrafast transient absorption spectroscopy. The hot carrier cooling process, determined by the hot phonon bottleneck, can be prolonged through rising the excitation photon energy or increasing the absorbed photon flux. By inducing the Auger heating effect under higher absorbed photon flux, the hot carrier lifetime also increases at the low excitation photon energy. When these two effects are combined under higher excitation photon energy and higher absorbed photon flux, the hot phonon bottleneck is gradually weakened because of Auger recombination. In addition, the similar hot carrier phenomenon can be observed in A/B excitonic states owing to the same physical mechanism. Our work establishes a solid photophysics foundation for 2D transition-metal dichalcogenide applications in advanced energy conversion, optical quantum communication, quantum technology, etc.

Charge Carrier Relaxation in Colloidal FAPbI3 Nanostructures Using Global Analysis

We study the hot charge carrier relaxation process in weakly confined hybrid lead iodide perovskite colloidal nanostructures, FAPbI3 (FA = formaminidium), using femtosecond transient absorption (TA). We compare the conventional analysis method based on the extraction of the carrier temperature (Tc) by fitting the high-energy tail of the band-edge bleach with a global analysis method modeling the continuous evolution of the spectral lineshape in time using a simple sequential kinetic model. This practical approach results in a more accurate way to determine the charge carrier relaxation dynamics. At high excitation fluence (density of charge carriers above 1018 cm−3), the cooling time increases up to almost 1 ps in thick nanoplates (NPs) and cubic nanocrystals (NCs), indicating the hot phonon bottleneck effect. Furthermore, Auger heating resulting from the multi-charge carrier recombination process slows down the relaxation even further to tens and hundreds of picoseconds. These two processes could only be well disentangled by analyzing simultaneously the spectral lineshape and amplitude evolution.

Exciton and Carrier Dynamics in Two-Dimensional Perovskites.

Two-dimensional Ruddlesden-Popper hybrid lead halide perovskites have become a major topic in perovskite optoelectronics. Here, we aim to unravel the ultrafast dynamics governing the evolution of charge carriers and excitons in these materials. Using a combination of ultrabroadband time-resolved THz (TRTS) and fluorescence upconversion spectroscopies, we find that sequential carrier cooling and exciton formation best explain the observed dynamics, while exciton-exciton interactions play an important role in the form of Auger heating and biexciton formation. We show that the presence of a longer-lived population of carriers is due to the latter processes and not to a Mott transition. Therefore, excitons still dominate at laser excitation densities. We use kinetic modeling to compare the phenethylammonium and butylammonium organic cations while investigating the stability of the resulting films. In addition, we demonstrate the capability of using ultrabroadband TRTS to study excitons in large binding energy semiconductors through spectral analysis at room temperature.

Slow carrier cooling in methylammonium lead bromide quantum dots: Evidence of hot phonon bottleneck

Photoinduced charge carrier dynamics studies in lead halide perovskites helps in explaining key processes like carrier trapping, diffusion and multiexciton dynamics etc. which are of importance to understand the fate of excitons. In the present study, we investigate the dynamics in methylammonium lead bromide perovskite nanocrystals under low and high pump intensity to study hot carrier cooling mechanisms. The single exciton studies conducted under low pump fluences (<N> = 0.3) revealed slow carrier decay with a significant fraction of >1 ns decay times as expected due to long radiative carrier recombination times. This also indicated that fast carrier trapping does not occur as evidenced by absence of any fast decay components. The hot carrier (HC) cooling mechanisms were verified by studying carrier density dependence of carrier temperature decays as extracted from the higher energy part of exciton bleach. These studies revealed a very fast cooling of ∼150 fs under low carrier density 1.5 × 1017/ cm3. However additional experiments under higher carrier densities of ∼1018-1019/cm3 showed a very slow carrier temperature decay with decay time ∼100 ps for the highest intensity investigated. The analysis of hot carrier lifetimes revealed Auger heating and acoustic phonon up-conversion as reason for hot carrier relaxations at higher intensities. Additionally, we carried out experiments under hole quencher, we found lower initial carrier temperatures and faster decay indicating highly efficient hole transfer to the quencher in a time scale faster than cooling of carrier at higher intensities. These results hint at possibility of molecular design for enabling efficient hot carrier extraction from these Quantum Dots (QDs).

Hot Phonon and Auger Heating Mediated Slow Intraband Carrier Relaxation in Mixed Halide Perovskite

A clear understanding of excited carrier relaxation to their equilibrium state via carrier-phonon, carrier-carrier interaction etc. is always required for the advancement of perovskite based device performance. Organic/inorganic lead halide perovskite have shown remarkable slow hot carrier cooling properties. Herein, we investigate the effect of hot phonon and Auger heating on hot carrier relaxation dynamics in Methyl-ammonium lead iodide-chloride (CH3NH3PbI3-XClX or mixed halide) perovskite using transient absorption spectroscopy. The reduced energy-loss rate on sub-picosecond time scale clearly shows the non-equilibrium build-up of longitudinal optical and acoustic phonon modes (carrier-phonon interaction) at low pump excitation (1018 cm-3). However at high pump excitation (1019 cm-3), dominating Auger heating process (carrier-carrier interaction) further reduces the energy-loss rate by more than two order of magnitude and delays the carrier relaxation process to tens of picoseconds which makes perovskite as a promising candidates in hot carrier photovoltaic.

Auger Heating and Thermal Dissipation in Zero-Dimensional CdSe Nanocrystals Examined Using Femtosecond Stimulated Raman Spectroscopy.

We report femtosecond stimulated Raman spectroscopy (FSRS) measurements on dispersions of CdSe semiconductor nanocrystals (NCs) as a function of particle size and pump fluence. Upon photoexcitation, we observe depletion of stimulated Raman gain corresponding to generation of longitudinal optical (LO) phonons followed by recovery on picosecond timescales. At higher fluences, production of multiple excitons slows recovery of FSRS signals, which we attribute to sustained increases of LO phonon populations due to multiexcitonic Auger heating. Owing to the discretized electronic structure of these NCs, such heating cannot be readily monitored via electronic spectroscopic analysis of high-energy band tails as has been performed for higher-dimensional materials. Notably, recovery timescales exceed those of the biexcitonic Auger recombination process and as such reveal overall thermalization timescales likely owing to an acoustic phonon thermalization bottleneck that dictates the cooling timescale.

Hot carrier cooling mechanisms in halide perovskites

Halide perovskites exhibit unique slow hot-carrier cooling properties capable of unlocking disruptive perovskite photon–electron conversion technologies (e.g., high-efficiency hot-carrier photovoltaics, photo-catalysis, and photodetectors). Presently, the origins and mechanisms of this retardation remain highly contentious (e.g., large polarons, hot-phonon bottleneck, acoustical–optical phonon upconversion etc.). Here, we investigate the fluence-dependent hot-carrier dynamics in methylammonium lead triiodide using transient absorption spectroscopy, and correlate with theoretical modeling and first-principles calculations. At moderate carrier concentrations (around 1018 cm−3), carrier cooling is mediated by polar Fröhlich electron–phonon interactions through zone-center delayed longitudinal optical phonon emissions (i.e., with phonon lifetime τLO around 0.6 ± 0.1 ps) induced by the hot-phonon bottleneck. The hot-phonon effect arises from the suppression of the Klemens relaxation pathway essential for longitudinal optical phonon decay. At high carrier concentrations (around 1019 cm−3), Auger heating further reduces the cooling rates. Our study unravels the intricate interplay between the hot-phonon bottleneck and Auger heating effects on carrier cooling, which will resolve the existing controversy.

Long-Lived Hot Carriers in Formamidinium Lead Iodide Nanocrystals

The efficient harvesting of hot carrier energy in semiconductors is typically inhibited by their ultrafast thermalization process. Recently, highly promising experiments reported on the slowdown of the intraband relaxation in hybrid metal halide perovskites. In this work, we report on the presence of long-lived hot carriers in weakly confined colloidal nanocrystals (NCs) of formamidinium lead iodide perovskite (FAPbI3). The effect is apparent from the excitation-dependent lengthening of the rise time and broadening of the high-energy tail of the transient absorption bleaching signal, yielding a retardation of the carrier relaxation by 2 orders of magnitude compared to typical time scales in colloidal semiconductor NCs. Three distinct cooling stages are observed, occurring at sub-picosecond, ∼5 ps, and ∼40 ps time scales, which we attribute to scattering from LO-phonons, contribution from a hot phonon bottleneck effect and Auger heating, respectively. Thermalization appears also influenced by the FAPbI3 NC...

Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals

Hot-carrier solar cells can overcome the Shockley-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ∼83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells.

A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons.

The direct conversion of solar energy to electricity can be broadly separated into two main categories: photovoltaics and thermal photovoltaics, where the former utilizes gradients in electrical potential and the latter thermal gradients. Conventional thermal photovoltaics has a high theoretical efficiency limit (84%) but in practice cannot be easily miniaturized and is limited by the engineering challenges of sustaining large (>1,000 K) temperature gradients. Here we show a hot-carrier-based thermophotonic solar cell, which combines the compact nature of photovoltaic devices with the potential to reach the high-efficiency regime of thermal photovoltaics. In the device, a thermal gradient of 500 K is established by hot electrons, under Stokes illumination, rather than by raising the temperature of the material itself. Under anti-Stokes (sub-bandgap) illumination we observe a thermal gradient of ∼20 K, which is maintained by steady-state Auger heating of carriers and corresponds to a internal thermal up-conversion efficiency of 30% between the collector and solar cell.

Nearly Temperature‐Independent Threshold for Amplified Spontaneous Emission in Colloidal CdSe/CdS Quantum Dot‐in‐Rods

Nearly Temperature‐Independent Threshold for Amplified Spontaneous Emission in Colloidal CdSe/CdS Quantum Dot‐in‐Rods

Decay of Cystalline Order and Equilibration during the Solid-to-Plasma Transition Induced by 20-fs Microfocused 92-eV Free-Electron-Laser Pulses

We have studied a solid-to-plasma transition by irradiating Al foils with the FLASH free electron laser at intensities up to 10(16) W/cm(2). Intense XUV self-emission shows spectral features that are consistent with emission from regions of high density, which go beyond single inner-shell photoionization of solids. Characteristic features of intrashell transitions allowed us to identify Auger heating of the electrons in the conduction band occurring immediately after the absorption of the XUV laser energy as the dominant mechanism. A simple model of a multicharge state inverse Auger effect is proposed to explain the target emission when the conduction band at solid density becomes more atomiclike as energy is transferred from the electrons to the ions. This allows one to determine, independent of plasma simulations, the electron temperature and density just after the decay of crystalline order and to characterize the early time evolution.

Temperature Dependence of Optical Gain in CdSe/ZnS Quantum Rods

We studied the optical gain characteristics of CdSe/ZnS core/shell colloidal quantum rods, investigated their temperature dependence, and compared the gain properties with quantum dots (QD). The gain was measured systematically for close-packed films of rods and dots under quasi-CW nanosecond optical pumping, using the variable stripe length method measuring the amplified spontaneous emission (ASE). Tunable ASE can be achieved by changing the rod diameter. Optical gain factors of up to 350 cm-1 at a temperature range of 10−120 K were measured for quantum rods. Above 120 K, the gain decreased sharply, but by increasing the pump power, ASE was easily achieved also at room temperature. The temperature dependence was assigned to the Auger heating process and phonon assisted thermal relaxation. QD of similar diameters as the rods showed much smaller gain values (∼50 cm-1) and a sharp decrease in gain at lowered temperatures (∼50 K), and ASE could not be detected at room temperature even at high pump powers. Th...

The effect of Auger heating on intraband carrier relaxation in semiconductor quantum rods

The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescence efficiency. A better understanding of the processes that govern carrier relaxation therefore has important technological implications. A significant increase in carrier–carrier interactions caused by strong spatial confinement of electronic excitations in semiconductor nanostructures leads to a considerable enhancement of Auger effects, which can further result in unusual, Auger-process-controlled recombination and energy relaxation regimes. Here, we report the first experimental observation of efficient Auger heating in CdSe quantum rods at high pump intensities, leading to a strong reduction of carrier cooling rates. In this regime, the carrier temperature is determined by the balance between energy outflow through phonon emission and energy inflow because of Auger heating. This equilibrium results in peculiar carrier cooling dynamics that closely correlate with recombination dynamics, an effect never seen before in bulk or nanoscale semiconductors.