Atomic Layer Deposition System Research Articles

Enhancing Internal and External Stability of Perovskite Solar Cells Through Polystyrene Modification of the Perovskite and Rapid Open‐Air Deposition of ZnO/AlOx Nanolaminate Encapsulation

In this study, the internal and external stabilities of a p–i–n methylammonium lead iodide perovskite solar cell (PSC) are improved. Polystyrene (PS) is introduced into the perovskite layer to form a cross‐linked polymer–perovskite network, which enhances the nucleation and growth of the perovskite grains. Moreover, for the first time, 60 nm thick ZnO/AlOx nanolaminate (NL) thin‐film encapsulation (TFE) is deposited directly on the PSC using an atmospheric‐pressure (AP) spatial atomic layer deposition system operated in AP spatial chemical vapor deposition (AP–SCVD) mode. The rapid nature of AP–SCVD enables encapsulation of the PSCs in open air at 130 °C without damaging the perovskite. The PS additive improves the performance and internal stability of the PSCs by reducing ion migration. Both the PS additive and the ZnO/AlOx NL TFEs improve the external stability under standard test conditions (dark, 65 °C, 85% relative humidity [RH]) by preventing water ingress. The number and thickness of the ZnO/AlOx NL layers are optimized, resulting in a water–vapor transmission rate as low as 5.1 × 10−5 g m−2 day−1 at 65 °C and 85% RH. A 14‐fold increase in PSC lifetime is demonstrated; notably, this is achieved using PS, a commodity‐scale polymer, and AP–SCVD, a scalable, open‐air encapsulation method.

Advancing Lithium-Ion Batteries’ Electrochemical Performance: Ultrathin Alumina Coating on Li(Ni0.8Co0.1Mn0.1)O2 Cathode Materials

Ni-rich Li(NixCoyMnz)O2 (x ≥ 0.8)-layered oxide materials are highly promising as cathode materials for high-energy-density lithium-ion batteries in electric and hybrid vehicles. However, their tendency to undergo side reactions with electrolytes and their structural instability during cyclic lithiation/delithiation impairs their electrochemical cycling performance, posing challenges for large-scale applications. This paper explores the application of an Al2O3 coating using an atomic layer deposition (ALD) system on Ni-enriched Li(Ni0.8Co0.1Mn0.1)O2 (NCM811) cathode material. Characterization techniques, including X-ray diffraction, scanning electron microscopy, and transmission electron microscopy, were used to assess the impact of alumina coating on the morphology and crystal structure of NCM811. The results confirmed that an ultrathin Al2O3 coating was achieved without altering the microstructure and lattice structure of NCM811. The alumina-coated NCM811 exhibited improved cycling stability and capacity retention in the voltage range of 2.8–4.5 V at a 1 C rate. Specifically, the capacity retention of the modified NCM811 was 5%, 9.11%, and 11.28% higher than the pristine material at operating voltages of 4.3, 4.4, and 4.5 V, respectively. This enhanced performance is attributed to reduced electrode–electrolyte interaction, leading to fewer side reactions and improved structural stability. Thus, NCM811@Al2O3 with this coating process emerges as a highly attractive candidate for high-capacity lithium-ion battery cathode materials.

Spatial atomic layer deposition of nitrogen-doped alumina thin films for high-performance perovskite solar cell encapsulation

An atmospheric-pressure spatial atomic layer deposition (AP-SALD) system is used to deposit nitrogen-doped alumina (N-AlOx) thin-film-encapsulation layers. The rapid nature of the AP-SALD process facilitates deposition of 60-nm layers directly on perovskite solar cells at 130 °C with no damage to the temperature-sensitive perovskite and organic materials. Varying the bubbling of a NH4OH precursor varied the nitrogen concentration from 0.08 to 0.68 at%. These small concentrations were found to have a significant impact on the structural properties of the films and their moisture barrier performance. The N-AlOx thin films had slightly higher growth rates than undoped AlOx, less unwanted hydroxyl and carbon content, and were smoother and more compact, which was attributed to a higher flux of reactive species from the volatile NH4OH. Optical calcium tests showed that the N-AlOx films had lower water-vapor-transmission rates (∼10-5 g/m2/day) than undoped AlOx films and the transmission was minimized for 0.28% nitrogen. The increased compactness of the N-AlOx films is expected to minimize nanoscale percolation pathways, whereas higher nitrogen-defect concentrations may facilitate water permeation through these pathways. The stability of n-i-p and p-i-n perovskite solar cells under standard ISOS-D-1 and ISOS-D-3 testing conditions was significantly enhanced by the encapsulation layers. An N-AlOx encapsulation layer with 0.28% nitrogen improved the T80 value of a p-i-n formamidinium methylammonium lead iodide solar cell from 144 hrs to 855 hrs (ISOS-D-1) and 52 hrs to 300 hrs (ISOS-D-3).

Mechatronic Spatial Atomic Layer Deposition for Closed‐Loop and Customizable Process Control

AbstractA customized atmospheric‐pressure spatial atomic layer deposition (AP‐SALD) system is designed and implemented, which enables mechatronic control of key process parameters, including gap size and parallel alignment. A showerhead depositor delivers precursors to the substrate while linear actuators and capacitance probe sensors actively maintain gap size and parallel alignment through multiple‐axis tilt and closed‐loop feedback control. Digital control of geometric process variables with active monitoring is facilitated with a custom software control package and user interface. AP‐SALD of TiO2 is performed to validate self‐limiting deposition with the system. A novel multi‐axis printing methodology is introduced using x‐y position control to define a customized motion path, which enables an improvement in the thickness uniformity by reducing variations from 8% to 2%. In the future, this mechatronic system will enable experimental tuning of parameters that can inform multi‐physics modeling to gain a deeper understanding of AP‐SALD process tolerances, enabling new pathways for non‐traditional SALD processing that can push the technology towards large‐scale manufacturing.

Rapid thermal processing induced interfacial diffusion and solid reaction in the Al2O3/ZnO nano-laminates films

Al2O3/ZnO nanolaminates are promising for thin-film transistors and photoluminescence applications. In this work, the thermal induced interface changes of Al2O3/ZnO nanolaminates were studied as a function of the in site deposition temperature and rapid post-annealing temperature. The Al2O3/ZnO nanolaminates were grown by atomic layer deposition system at 80 °C, 120 °C, and 250 °C, and further post-annealed in a rapid thermal processing (RTP) furnace at 600 °C, 700 °C, and 800 °C for 10 min, separately. Then the microstructures, interfacial diffusion and solid-phase reactions of the Al2O3/ZnO nanolayers were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM). The results show that the in situ growth temperature directly affects the crystallinity and selective orientation of the ZnO interlayers, which further induce the ZnO interlayers to undergo completely different interfacial diffusion and solid-phase reactions during the rapid post-annealing processing. The films grown at 80 °C were close to amorphous, while those grown at 120 °C had a distinctly dominant orientation and exhibited better crystallization at 250 °C. The presence of the ZnAl2O4 grains indicates the solid-phase reactions have occurred on the ZnO/Al2O3 interface during the rapid post-annealing at 700 °C or above.

Growth and characterization of Peald deposited La2O3 on SiO2/Si

In this study, we have deposited lanthanum oxide (La2O[Formula: see text] ultrathin films onto Si substrate with pre-deposited SiO2 (SiO2/Si substrate) by indigenously developed plasma-enhanced atomic layer deposition (PEALD) system at a low RF power of 30[Formula: see text]W. An in-situ nitrogen plasma (N[Formula: see text] treatment was performed to minimize the defects at interface. Thickness of deposited La2O3 film is estimated to be of 2.1[Formula: see text]nm for 50 cycles as per the growth rate of 0.42A/cycle. The deposited La2O3/SiO2/Si stack underwent post-deposition annealing (PDA) at temperatures of 400∘C, 500∘C, and 600∘C. These films were analyzed using Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). The results showed that the La2O3 ultra thin films on SiO2/Si substrates are amorphous in nature. The atomic force microscopy (AFM) micrograph revealed minimal roughness.

High Reliability Tungsten-Doped Indium Zinc Oxide Thin Film Transistors for Display Applications

Recently, flat panel display technologies are based on amorphous silicon (a-Si), polycrystalline silicon (poly-Si) or amorphous oxide semiconductor (AOS) thin film transistors (TFTs) technology. In order to reach higher performance for ultra-high resolution display applications, the material selection for the channel layer is vital. AOS TFTs drawn lots of attention because of its advantages such as low leakage current, high driving current and high uniformity [1,3]. In this work, we presented a novel amorphous oxide semiconductor (AOS) material of gallium-free a-InWZnO thin film transistors (IWZO TFTs) which is very promising to be applied for ultra-high resolution display technology. Experiment In this work, we demonstrated the structure of a-IWZO TFTs processes. Figure 1 shows the schematic of the TFT cross-section. After growing a 550 nm thermal oxide layer as buffer layer, a 25-nm-thick of molybdenum was deposited by DC-sputter as the bottom gate electrode. A 10-nm-HfO2 was deposited by plasma-enhanced atomic layer deposition (PEALD) system as high-κ gate dielectric (GI). Then, post deposition annealing (PDA) was carried out to enhance the quality of the insulator layer. Next, an ultra-thin body a-IWZO was deposited by RF-sputter as channel layer. Finally, source and drain were defined by lift-off process and the gate contact via was etched by dry etching to finish the device fabrication. Result and Discussion Figure 1(b) shows the negative gate bias stress (NGBS) transfer curve (ID-VG) of a-IWZO TFTs with passivation layer. The experimental results have shown that passivation layer could keep the back channel of IWZO channel from exposing to oxygen and hydrogen from the atmosphere. Without the passivation layer, the back channel would contact moisture leading the diffused hydrogen atoms to fill oxygen vacancy sites and de-trap free carriers, causing the VTH shifts negatively. The ultra-thin a-IWZO TFTs with passivation layer exhibited a low subthreshold swing (S.S.) of 89.7 mV/dec, high on/off current ratio (ION/IOFF) of 2.1×107 and small threshold voltage shift (ΔVth) of -0.097 V during NGBS of -2MV/cm with 2000s. To sum up, the passivation layer could enhance the a-IWZO TFTs reliability. Reference [1] Kamiya, H. Hosono, NPG Asia Mater., vol. 2, pp. 15, 2010.[2] Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, nature, vol. 432, no. 7016, pp. 488-492, 2004.[3] Y. Kuo, C. M. Chang, I. H. Liu, and P. T. Liu, Scientific reports, vol. 9, no. 1, pp. 1-7, 2019. Figure 1

Effect of different oxygen precursors on alumina deposited using a spatial atomic layer deposition system for thin-film encapsulation of perovskite solar cells

An atmospheric-pressure spatial atomic layer deposition system operated in atmospheric-pressure spatial chemical vapor deposition conditions is employed to deposit alumina (AlO x ) thin films using trimethylaluminum and different oxidants, including water (H2O), hydrogen peroxide (H2O2), and ozone (O3). The impact of the oxygen precursor on the structural properties of the films and their moisture-barrier performance is investigated. The O3-AlO x films, followed by H2O2-AlO x , exhibit higher refractive indexes, lower concentrations of OH− groups, and lower water-vapor-transmission rates compared to the films deposited using water (H2O-AlO x ). The AlO x films are then rapidly deposited as thin-film-encapsulation layers on perovskite solar cells at 130 °C without damaging the temperature-sensitive perovskite and organic materials. The stability of the p–i–n formamidinium methylammonium lead iodide solar cells under standard ISOS-D-3 testing conditions (65 °C and 85% relative humidity) is significantly enhanced by the encapsulation layers. Specifically, the O3-AlO x and H2O2-AlO x layers result in a six-fold increase in the time required for the cells to degrade to 80% of their original efficiency compared to un-encapsulated cells.

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

A HfO2/Al2O3/AlN stack deposited in a plasma-enhanced atomic layer deposition system is used as the gate dielectric for GaN metal–insulator–semiconductor structures. Prior to the deposition, in situ remote plasma pretreatments (RPPs) with O2, NH3, and NH3–O2 (in sequence) were carried out. Frequency-dependent capacitance–voltage (C–V) measurements reveal that for all the RPP-treated samples, the interface trap density Dit was significantly reduced compared to the sample without RPP. In particular, the NH3-treated sample exhibits an extremely low Dit of ∼1011 cm−2·eV−1 from EC − 0.31 eV to EC − 0.46 eV. To characterize the interface traps at deeper levels, the transfer pulsed I–V measurement was employed further. In the energy range of EC − ET > 0.54 eV, the interface trap charge density Qit of various samples demonstrates the following order: NH3 RPP < NH3–O2 RPP < O2 RPP < without RPP. By adjusting multiple pulse widths, the Dit derived from the Qit result matches the C–V measurement precisely. Moreover, X-ray photoelectron spectroscopy analysis of the Ga 3d core-level indicates that NH3 RPP facilitates the conversion of Ga2O into GaN at high RF power of 2500 W, whereas O2 RPP mainly oxidizes GaN to relatively stable Ga2O3. Combined with the C–V and pulsed I–V measurements, it is confirmed that a strong positive correlation exists between Ga2O and the interface traps, rather than Ga2O3.

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

This work adopts interface charge engineering to fabricate normally off metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) on an in situ SiNx/AlGaN/GaN platform using an in situ O3 treatment performed in the atomic layer deposition system. The combination of in situ SiNx passivation and an O3-treated Al2O3/AlGaN gate interface allows the device to provide an excellent breakdown voltage of 1498 V at a low specific on-resistance of 2.02 mΩ cm2. The threshold voltage is increased by 2 V by significantly compensating the net polarization charges by more than five times with O3 treatment as well as reducing the interface traps and improving the high-temperature gate stability. Furthermore, a physical model of fixed charges at the Al2O3/AlGaN interface is established based on dielectric thickness-dependent linear fitting and numerical calculations. The matched device performance and simulated energy band bending elucidate the O3-treated fixed-charge modulation mechanism, providing a practical method for producing normally off GaN MIS-HEMTs.

Area-Selective Atomic Layer Deposition of ZnO on Si\SiO2 Modified with Tris(dimethylamino)methylsilane.

Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si\SiO2) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near-atmospheric pressure, flow-through, gas-phase reactor. TDMAMS had previously been shown to react with Si\SiO2 in a single cycle/reaction and to drastically reduce the number of silanols that remain at the surface. ZnO was deposited in a commercial ALD system using dimethylzinc (DMZ) as the zinc precursor and H2O as the coreactant. Deposition of TDMAMS was confirmed by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and wetting. ALD of ZnO, including its selectivity on TDMAMS-terminated Si\SiO2 (Si\SiO2\TDMAMS), was confirmed by in situ multi-wavelength ellipsometry, ex situ SE, XPS, and/or high-sensitivity/low-energy ion scattering (HS-LEIS). The thermal stability of the TDMAMS resist layer, which is an important parameter for AS-ALD, was investigated by heating Si\SiO2\TDMAMS in air and nitrogen at 330 °C. ALD of ZnO takes place more readily on Si\SiO2\TDMAMS heated in the air than in N2, suggesting greater damage to the surface heated in the air. To better understand the in situ ALD of ZnO on Si\SiO2\TDMAMS and modified (thermally stressed) forms of it, the ellipsometry results were plotted as the normalized growth per cycle. Even one short pulse of TDMAMS effectively passivates Si\SiO2. TDMAMS can be a useful, small-molecule inhibitor of ALD of ZnO on Si\SiO2 surfaces.

Self‐Powered UV Photodetector Utilizing Plasmonic Hot Carriers in 2D α‐MoO3/Ir/Si Schottky Heterojunction Devices

Self‐powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self‐powered photodetectors (PDs) have several advantages over traditional PDs, including higher sensitivity, lower power consumption, and simpler design. This study introduces a breakthrough self‐powered PD that uses a Schottky junction of 2D α‐MoO3/iridium (Ir)/Si ultrathin film to detect 365 nm light at 0 V bias through using atomic layer deposition (ALD) and sputtering systems. The PD response is enhanced by plasmonic Ir‐induced hot carriers, enabling detection in a mere 0.1 ms. Incorporating a 4 nm Ir layer boosts the responsivity from 0 to 34 A W−1, and the external quantum efficiency is elevated from 0 to 7E11 under 365 nm light illumination. It also has a high ION/IOFF ratio of 11.22E4 at 0 V. These results make the MoO3/4 nm Ir/Si structure an interesting option for self‐powered PDs with high efficiency, and the use of a simple ALD system for large‐scale fabrication of 2D α‐MoO3 on hot carrier Ir plasmonic layer. The findings of this research hold tremendous promise in the field of UV sensing and can lead to exciting developments in military and civilian technology.

Rational Strategy for Space-Confined Atomic Layer Deposition

Atomic layer deposition (ALD) offers excellent controllability of spatial uniformity, film thickness at the Angstrom level, and film composition even for high-aspect-ratio nanostructured surfaces, which are rarely attainable by other conventional deposition methodologies. Although ALD has been successfully applied to various substrates under open-top circumstances, the applicability of ALD to confined spaces has been limited because of the inherent difficulty of supplying precursors into confined spaces. Here, we propose a rational methodology to apply ALD growths to confined spaces (meter-long microtubes with an aspect ratio of up to 10 000). The ALD system, which can generate differential pressures to confined spaces, was newly developed. By using this ALD system, it is possible to deposit TiOx layers onto the inner surface of capillary tubes with a length of 1000 mm and an inner diameter of 100 μm with spatial deposition uniformity. Furthermore, we show the superior thermal and chemical robustness of TiOx-coated capillary microtubes for molecular separations when compared to conventional molecule-coated capillary microtubes. Thus, the present rational strategy of space-confined ALD offers a useful approach to design the chemical and physical properties of the inner surfaces of various confined spaces.

WS2 and WS2-ZnO Chemiresistive Gas Sensors: The Role of Analyte Charge Asymmetry and Molecular Size.

We investigate the interaction of various analytes (toluene, acetone, ethanol, and water) possessing different structures, bonding, and molecular sizes with a laser-exfoliated WS2 sensing material in a chemiresistive sensor. The sensor showed a clear response to all analytes, which was significantly enhanced by modifying the WS2 surface. This was achieved by creating WS2-ZnO heterojunctions via the deposition of ZnO nanoparticles on the WS2 surface with a high-throughput, atmospheric-pressure spatial atomic layer deposition system. Water and ethanol produced a much higher response compared to acetone and toluene for both the WS2 and WS2-ZnO sensing mediums. We resolved that the charge-asymmetry points in analyte molecules play a key role in determining the sensor response. High charge-asymmetry points correspond to highly polar bonds (HPBs) in a neutral molecule that have a high probability of interaction with the sensing medium. Our results indicate that the polarity of the HPBs primarily dictates the interaction between the analyte and sensing medium and consequently controls the response of the sensor. Moreover, the size of the analyte molecule was found to affect the sensing response; if two molecules have the same HPBs and are exposed to the same sensing medium, the smaller molecule is likely to produce a higher and faster response. Our study provides a comprehensive picture of analyte-sensor interactions that can help in advancing semiconductor gas sensors, including those based on two-dimensional materials.

Super-conformal TiN thin film deposition by carrier pulse purge atomic layer deposition system: Chamber design optimization with computational fluid dynamics

Owing to the increase in demand for the shrinkage of semiconductor design rules and the advent of the three-dimensional structure of semiconductor devices, atomic layer deposition (ALD) has emerged as an attractive alternative to conventional chemical vapor deposition techniques. Although the development of precursors and characterization of ALD films have been widely studied, few studies have been conducted on the modification of ALD parameters and optimization of the ALD process. In this study, an advanced ALD titanium nitride (TiN) system was designed using a pumping and purging simulationBased on the simulation results, we adopted a carrier pulse purge method, where TiCl4 fed, purge N2, pulse purge N2, purge N2, NH3 fed, purge N2, pulse purge N2, and purge N2 were alternatively injected into the chamber in the ALD cycle. Compared to the conventional purge method, the carrier pulse purge method can reduce the ALD cycle time by 18.27% and yields a high-quality (high step coverage, 98 %) TiN film with lower electrical resistivity and chlorine impurity. This carrier pulse purge method can ultimately lead to improved throughput and productivity in the semiconductor industry by reducing the ALD cycle time.

Optical, Optoelectronic, and Third‐Order Nonlinear Photonics of Ultrathin Molybdenum Oxide Film Deposited by Atomic Layer Deposition

The atomic layer deposition (ALD) technique has attracted significant attention because it enables the control of film synthesis at the subnanometre scale. Herein, molybdenum oxide (MoO3) ultrathin films using the ALD system through Bis(t‐butylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum (Mo) source are prepared. To understand the effect of deposition temperature, thin films are prepared at three different temperatures 100, 150, and 250 °C. The morphological and elemental properties are assessed using a field emission scanning electron microscope, scanning transmission electron microscopy, and energy‐dispersive X‐ray spectroscopy techniques. It is observed that the film thicknesses increase with the increase in the deposition temperature. It is found that the film growth at 150 °C is the most potential one for UV optoelectronic applications with high stability even under low applied bias voltages. Moreover, these films show interesting nonlinear optical behaviors as investigated with the z‐scan technique applying open and closed aperture methods. The calculated nonlinear optical parameters including nonlinear absorption coefficient (β), nonlinear refractive index (n 2), nonlinear refractive coefficient (γ), and third‐order nonlinear susceptibility (χ (3)) are 10−11 m W−1, 10−16 cm2 W−1, 10−11 cm2 W−1, and 10−11 esu, respectively.

Process temperature-dependent interface quality and Maxwell-Wagner interfacial polarization in atomic layer deposited Al2O3/TiO2 nanolaminates for energy storage applications.

Considering the excellent tunability of electrical and dielectric properties in binary metal oxide based multi-layered nanolaminate structures, a thermal atomic layer deposition system is carefully optimized for the synthesis of device grade Al2O3/TiO2 nanolaminates with well-defined artificial periodicity and distinct interfaces, and the role of process temperature in the structural, interfacial, dielectric and electrical properties is systematically investigated. A marginal increase in interfacial interdiffusion in these nanolaminates, at elevated temperatures, is validated using X-ray reflectivity and secondary ion mass spectrometry studies. With an increase in deposition temperature from 150 to 300 °C, the impedance spectroscopy measurements of these nanolaminates exhibited a monotonic increment in dielectric constant from ∼95 to 186, and a decrement in dielectric loss from ∼0.48 to 0.21, while the current-voltage measurements revealed a subsequent reduction in leakage current density from ∼2.24 × 10-5 to 3.45 × 10-7 A cm-2 at 1 V applied bias and an improvement in nanobattery polarization voltage from 100 mV to 700 mV, respectively. This improvement in dielectric and electrical properties at elevated processing temperature is attributed to the reduction in impurity content along with the significant enhancement in sublayer densities and the conductivity contrast driven Maxwell-Wagner interfacial polarisation. Additionally, the devices fabricated at 300 °C exhibited a higher capacitance density of ∼22.87 fF μm-2, a low equivalent oxide thickness of ∼1.51 nm, and a low leakage current density of ∼10-7 A cm-2 (at 1 V bias), making this nanolaminate a promising material for high-density energy storage applications. These findings highlight the ALD process temperature assisted growth chemistry of Al2O3/TiO2 nanolaminates for superior dielectric performance and multifaceted applications.

Release Rate Studies of 5-Aminosalacylic Acid Coated with Atomic Layer-Deposited Al2O3 and ZnO in an Acidic Environment.

5-Aminosalicylic acid (5-ASA) is a first-line defense drug used to treat mild cases of inflammatory bowel disease. When administered orally, the active pharmaceutical ingredient is released throughout the gastrointestinal tract relieving chronic inflammation. However, delayed and targeted released systems for 5-ASA to achieve optimal dose volumes in acidic environments remain a challenge. Here, we demonstrate the application of atomic layer deposition (ALD) as a technique to synthesize nanoscale coatings on 5-ASA to control its release in acidic media. ALD Al2O3 (38.0 nm) and ZnO (24.7 nm) films were deposited on 1 g batch powders of 5-ASA in a rotatory thermal ALD system. Fourier transform infrared spectroscopy, scanning electron microscopy, and scanning/transmission electron microscopy establish the interfacial chemistry and conformal nature of ALD coating over the 5-ASA particles. While Al2O3 forms a sharp interface with 5-ASA, ZnO appears to diffuse inside 5-ASA. The release of 5-ASA is studied in a pH 4 solution via UV-vis spectroscopy. Dynamic stirring, mimicking gut peristalsis, causes mechanical attrition of the Al2O3-coated particles, thereby releasing 5-ASA. However, under static conditions lasting 5000 s, the Al2O3-coated particles release only 17.5% 5-ASA compared to 100% release with the ZnO coating. Quartz crystal microbalance-based etch studies confirm the stability of Al2O3 in pH 4 media, where the ZnO films etch 41× faster than Al2O3. Such results are significant in achieving a nanoscale coating-based drug delivery system for 5-ASA with controlled release in acidic environments.

Thickness effect on solar-blind photoelectric properties of ultrathin β-Ga2O3 films prepared by atomic layer deposition

The β-Ga2O3 films with different thicknesses are prepared by an atomic layer deposition system. The influence of film thickness on the crystal quality is obvious, indicating that the thicker films perform better crystal quality, which is verified from x-ray diffraction (XRD) and scanning electron microscope (SEM) results. The Ga2O3-based solar blind photodetectors with different thicknesses are fabricated and studied. The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness. The photodetectors with inter-fingered structure based on 900 growth cycles β-Ga2O3 active layers (corresponding film thickness of 58 nm) exhibit the best performances including a low dark current of 134 fA, photo-to-dark current ratio of 1.5 × 107, photoresponsivity of 1.56 A/W, detectivity of 2.77 × 1014 Jones, and external quantum efficiency of 764.49% at a bias voltage of 10 V under 254-nm DUV illumination. The photoresponse rejection ratio (R 254/R 365) is up to 1.86 × 105. In addition, we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure. As the finger spacing decreases from 50 μm to 10 μm, the photoresponsivity, detectivity, and external quantum efficiency increase significantly.

A toolbox for easy entry low wavenumber in situ atomic layer deposition transmission FTIR spectroscopy studies.

A detailed description of a flexible and portable atomic layer deposition (ALD) system is presented for conducting in situ Fourier transform infrared (FTIR) absorption spectroscopy studies during the evolution and growth of ALD films. The system is directly integrated with a commercial FTIR spectrometer (Bruker Vertex 80V) to avoid the necessity of an external optical path to the instrument, thereby mitigating complexity and optical losses. In this work, we use potassium bromide (KBr) with a 5nm layer of sputtered Si as a substrate due to higher infrared transmittance when compared to a single-side polished Si wafer. The FTIR absorption study is conducted at normal incidence in transmission mode using a deuterated L-alanine doped triglycine sulfate (DTGS) detector owing to its potential applicability for reliable measurements at wavenumbers below ∼700cm-1. We demonstrate this by measuring ex situ the transverse optical phonon of bulk Al2O3 centered at 680cm-1. The integrity and functionality of the system to track the nucleation stage are validated by conducting in situ FTIR absorption measurements of Al2O3 using tri-methyl aluminum (TMA) and H2O. The measured IR absorption spectra for the Al2O3 growth after each cycle of TMA and H2O show the formation and removal of CH3 (2800-3000cm-1) groups on the substrate surface and CH4 (3016 and 1306cm-1) molecules in the reactor, thus confirming the successful tracking of ligand exchange. Thus, this instrument, together with the choice of KBr as substrate, can enable straightforward ALD nucleation studies using a DTGS detector having sufficient signal without additional optical setup and modifications to off-the-shelf FTIR systems that allow low wavenumber experiments.