Atomic Layer Deposition Process Research Articles

Substrate induced composition change during Ge2Sb2Te5 atomic layer deposition and study of initial reactions on SiO2 surface

Ge2Sb2Te5 (GST) is a well-known phase change material used in nonvolatile memory devices, photonics, and nonvolatile displays. This study investigates the impact of precursor sequence during atomic layer deposition (ALD) of GST from GeCl2.C4H8O2, SbCl3, and Te[(CH3)3Si]2 on Si/SiO2 substrates, focusing on growth per cycle, morphology, and composition along with initial precursor reactions on the substrate. We found that while thick layers approach stoichiometric Ge2Sb2Te5, a Ge-rich interfacial layer is initially formed, regardless of the binary ALD sequence used to start the deposition (GeTe vs Sb2Te3). Starting the ALD process with the GeTe-Sb2Te3 sequence results in a higher Ge content near the GST/SiO2 interface compared to the Sb2Te3-GeTe sequence. To understand these phenomena, we examine the initial precursor reactions on the SiO2 substrate by total reflection x-ray fluorescence spectrometry. The analysis reveals that SbCl3 exhibits lower reactivity with the SiO2 substrate than GeCl2.C4H8O2, and not all Ge adspecies react with the Te[(CH3)3Si]2 precursors. Additionally, the impact of the initial SiO2 surface on deposition extends over several ALD cycles, as the SiO2 surface only gradually gets covered by GST due to island growth. These processes contribute to the formation of a Ge-rich GST layer at the interface, irrespective of the precursor pulse sequence. These insights from the study may contribute to optimizing the initial deposition stages of GST and other ternary ALD processes to enable better composition control and enhanced device performance.

Atomic Layer Deposition of ZnO on CsPbBr3 Perovskite Nanocrystals: Surface-Dependent Mechanistic Insights.

In this study, we investigate the atomic layer deposition (ALD) process on all-inorganic CsPbBr3 perovskite nanocrystals (PNCs) to introduce an inorganic electron transport layer (ETL) in light-emitting diode (LED) devices. Two types of CsPbBr3 PNCs were synthesized with oleate (OA) and oleylammonium (OLA) ligands on the surface. We found that CsPbBr3 PNCs with Cs oleate surfaces experienced severe photoluminescence (PL) quenching after the ALD process, while those with oleylammonium bromide surfaces did not show any significant PL drop. Transmission electron microscopy and X-ray photoelectron spectroscopy revealed that significant Pb metal formation and Ruddlesden-Popper planar faults, linked to uncoordinated Pb2+ ion defects, were generated in CsPbBr3 PNCs terminated with Cs oleate after ALD ZnO. Finally, we fabricated LEDs using PNCs with an ALD ZnO process to introduce inorganic ZnMgO nanoparticles as the ETL. The devices processed with ALD exhibited superior luminance and external quantum efficiency compared to those without the ALD process. This research provides crucial insights into the surface-dependent chemistry of PNCs and the surface-dependent performance of perovskite-based optoelectronic devices.

Investigation of W/L ratio on the performance of ZnO transistors and inverters

Abstract Oxide transistors have attracted considerable attention in the field of integrated circuits. In this work, ZnO transistors were fabricated using atomic layer deposition process, with various width-to-length (W/L) ratios of 100/10 μm, 50/10 μm, 20/5 μm, 10/5 μm, and 10/10 μm. Among them, the ZnO transistor with a W/L ratio of 10/10 μm demonstrated superior electrical performance, including a field-effect mobility of 37.65 cm²V-1s-1, a subthreshold swing of 112.50 mV/decade, and a turn-on voltage of -0.50 V. Additionally, n-type ZnO transistors were used to design inverter circuits, where the voltage gain was found to be inversely correlated with the W/L ratio of the load transistor. A maximum voltage gain of 59.33 V/V was achieved at a supply voltage of 5 V using a load transistor with a W/L ratio of 10/5 μm. These results indicate that ZnO transistors, with optimized design, offer promising performance for future integrated circuit applications.

Numerical simulation of the temperature excursions of porous substrates during atomic layer deposition

Atomic layer deposition (ALD) processes are usually highly exothermic. For ALD on substrates with high specific surface area, the reaction heat per ALD cycle may lead to a substantial temperature rise of the substrates. The novelty of this study lies in quantifying the temperature excursions of porous substrates during ALD via numerical simulation and further addresses the issue of tuning this type of thermal effect. A comprehensive model has been developed and validated to investigate the ALD thermal effect with accounting for the roles of the precursor transport phenomena within the ALD reactor system, and the coupling among the precursor diffusion, heat transfer, film deposition, reaction heat generation within the porous substrates. The results show that the thermal effect of the sub-saturated ALD can change with different substrate thickness, precursor partial pressure profile, heat transfer coefficient, and kinetic parameters. In contrast, for saturated ALD with adiabatic condition, the maximum temperature rise of the substrate is a deterministic value, independent of the substrate thickness and precursor partial pressure profile. The thermal effect with the porous substrates can influence the ultimate deposit amount and its distribution for sub-saturated ALD and change the time required for attaining saturation for saturated ALD. The temperature rises of certain common substrates during typical half-ALD cycles have been simulated to demonstrate the capability of the present model in predicting the thermal effect of ALD.

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Two-dimensional transition metal dichalcogenides (2D TMDs), such as MoS2 and WS2, have emerged as promising channel materials for future generation transistors. However, carbon-based surface contaminants pose a significant challenge in the formation of high-quality metal–oxide–semiconductor gate stacks for 2D TMDs. Carbon-based surface contaminants are known to be present even on directly grown 2D TMDs that have not been in contact with polymers. These organic contaminants affect precursor adsorption during atomic layer deposition (ALD) of gate dielectrics on 2D TMDs and as such the 2D-dielectric interface. This study examines the effectiveness of predeposition annealing in mitigating carbon-based contaminants while maintaining the integrity of a directly grown WS2 monolayer on a SiO2 substrate. We show that a WS2 monolayer on a SiO2/Si substrate remains stable during vacuum annealing at temperatures up to 400 °C. Water contact angle measurements and x-ray photoelectron spectroscopy confirm that the surface concentration of carbon starts to decrease at 150 °C. Thermal anneal improves the surface coverage of Al2O3 for both conventional chemisorption-based ALD and physisorbed-precursor-assisted ALD processes by facilitating more effective Al2O3 nucleation on the WS2 monolayer. The impact of predeposition anneal on the Al2O3 growth behavior in both processes can be explained by changes in surface contaminant levels. Our results underscore the importance of surface pretreatment in dielectric deposition on 2D TMDs and demonstrate that predeposition anneal is an effective method to enhance ALD-based dielectric deposition on directly grown 2D TMDs.

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

AbstractDeposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation of high‐resolution and high‐frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD‐derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four‐probe measurements, reaching the level of low‐temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD‐derived InO film features advantages as compared to those of the PLD‐deposited and solution‐processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias‐stress stability of ALD‐derived TFTs can be improved with further passivation.

Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition.

We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory. To this end, a new atomic layer deposition process using sequential remote plasma (RP) and direct plasma (DP) was designed to create charge-trapping memory devices. Subsequently, the operational characteristics of the devices were analyzed based on the thickness ratio of thin films deposited using the sequential RP and DP processes. As the thickness of the initially RP-deposited thin film increased, the memory window and retention also increased, while the interface defect density and leakage current decreased. When the thickness of the RP-deposited thin film was 7 nm, a maximum memory window of 10.1 V was achieved at an operating voltage of ±10 V, and the interface trap density (Dit) reached a minimum value of 1.0 × 1012 eV-1cm-2. Once the RP-deposited thin film reaches a certain thickness, the ion bombardment effect from DP on the substrate is expected to decrease, improving the Si/SiO2/HfO2 interface and thereby enhancing device endurance and reliability. This study confirmed that the proposed sequential RP and DP deposition processes could resolve issues related to unstable interface layers, improve device performance, and enhance process throughput.

Silyl- and Germyl-Substituted Boranes: Synthesis and Investigation as Potential Atomic Layer Deposition Precursors.

Boranes featuring bulky hypersilyl or supersilyl groups and/or sterically unencumbered trimethylgermyl substituents were synthesized for investigation as potential precursors for atomic layer deposition (ALD) of elemental boron. The envisaged ALD process would employ a boron trihalide coreactant, exploiting the formation of strong silicon-halogen and germanium-halogen bonds as a driving force. The alkali metal silyl and germyl compounds hypersilyl lithium, {(Me3Si)3Si}Li(THF)3 (1), supersilyl sodium, (tBu3Si)Na(THF)n (2, n = 2-3), and trimethylgermyl lithium, {Me3GeLi(THF)2}2 (3), were used for the synthesis of the silyl- and germyl-substituted boranes in this work. Compounds 1 and 2 were synthesized as previously reported, and compound 3 was isolated from the reaction of trimethylgermane with tert-butyl lithium. Compounds 2 and 3 were crystallographically characterized. Reaction of B(NMe2)Cl2 with 2 equiv of 1 afforded previously reported {(Me3Si)3Si}2B(NMe2) (4), whereas reactions of B(NMe2)Cl2 or {B(NMe2)F2}2 with excess 2 only afforded the monosilyl boranes (tBu3Si)B(NMe2)X {X = Cl (5) and F (6)}. Reaction of 5 with 0.5 equiv of {Me3GeLi(THF)2}2 (3) provided the first example of a mixed silyl/germyl-substituted borane, (tBu3Si)(Me3Ge)B(NMe2) (7). Attempts to synthesize (Me3Ge)2B(NMe2) from the 1:1 reaction of B(NMe2)Cl2 with {Me3GeLi(THF)2}2 afforded a mixture of two major products, one of which was identified as the tri(germyl)(amido)borate {(Me3Ge)3B(NMe2)}Li(THF)2 (8); compound 8 was isolated from the 1:1.5 reaction. Reaction of more sterically encumbered B(TMP)Cl2 with 1 equiv of {Me3GeLi(THF)2}2 afforded the di(germyl)(amido)borane (Me3Ge)2B(TMP) (9). Boranes 4, 7, and 9 and borate 8 were crystallographically characterized. The thermal stability and volatility of boranes 4, 7, and 9 was evaluated, the solution reactivity of 4 and 7 with boron trihalides was assessed, and ALD was attempted using 4 in combination with BCl3 and BBr3 at 150 and 300 °C.

Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma

As a transition metal chalcogenide, tantalum sulfide (TaSx) is of interest for semiconductor device applications, for example, as a diffusion barrier in Cu interconnects. For deposition of ultrathin nanolayers in such demanding 3D structures, a synthesis method with optimal control is required, and therefore, an atomic layer deposition (ALD) process for TaSx was developed. ALD using (tert)-butylimidotris(dimethylamido)tantalum (Ta[N(CH3)2]3[NC(CH3)3]) as the precursor and an H2S-based plasma as the coreactant results in linear growth of TaSx films as a function of the number of cycles for all temperatures in the range 150–400 °C with growth per cycle values between 1.17±0.03 Å and 0.87±0.08 Å. Saturation of the precursor and plasma dose times, established at 300 °C, was reached after 20 and 10 s, respectively. Variation of the table temperature or the plasma composition offers the possibility to tune the film properties. At 300 °C, amorphous TaS3 films were grown, while addition of H2 to the plasma led to polycrystalline TaS2 films. The difference in sulfur content in the films correlates to a change in resistivity, where the least resistive film had the lowest S content.

In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO2 on Fullerenes for Perovskite Photovoltaics.

In recent years, atomic layer deposition (ALD) has established itself as the state-of-the-art technique for the deposition of SnO2 buffer layers grown between the fullerene electron transport layer (ETL) and the ITO top electrode in metal halide perovskite-based photovoltaics. The SnO2 layer shields the underlying layers, i.e., the fullerene-derivative materials such as C60 and PCBM, as well as the perovskite absorber, from water ingress and damage induced by the sputtering of the transparent front contact. Our study undertakes a comprehensive investigation of the impact of SnO2 ALD processing on fullerenes by means of in situ spectroscopic ellipsometry (SE) and transmission infrared spectroscopy (FTIR). While no difference in SnO2 bulk properties is observed and the perovskite absorber degradation is nearly entirely avoided during exposure to heat and vacuum, when the absorber is introduced beneath the organic ETLs, a SnO2 growth delay of about 50 ALD cycles is measured on PCBM, whereas the delay is limited to 10 cycles in the case of growth on C60. Notably, FTIR measurements show that while C60 remains chemically unaffected during SnO2 ALD growth, PCBM undergoes chemical modification, specifically of its ester groups. The onset of these modifications corresponds with the detection of the onset, after the initial delay, of ALD SnO2 growth. It is expected that the modification that the PCBM layer undergoes upon ALD SnO2 processing is responsible for the systematic lower photovoltaic device performance in the case of PCBM-based devices, with respect to C60-based devices.

ALd of Metal Fluorides–Potential Applications and Current State

AbstractMetal fluoride thin films are important materials in a multitude of applications. Currently, they are mostly used in optics, but their potential in energy harvesting and storage is recognized as well. Atomic layer deposition (ALD) is an advanced thin film deposition method that has an ever‐increasing role in microelectronics. The assets of ALD are its capability to produce uniform, stoichiometric, and pure films with precise thickness control even on top of complicated structures, such as high aspect ratio trenches. These characteristics can be beneficial in applications of metal fluoride thin films but so far ALD of metal fluorides has remained much less studied and used than ALD of metal oxides, nitrides, sulfides, and pure metals. This review aims to motivate research on ALD of metal fluorides by surveying potential applications for ALD metal fluoride thin films and coatings. The basics of luminescent applications, antireflection coatings, and lithium‐ion batteries will be discussed. Next, the fundamentals of ALD will be presented followed by a comprehensive summary of the metal fluoride ALD processes published so far.

Low temperature atomic layer deposition of PbO2 for electrochemical applications

A low temperature atomic layer deposition (ALD) process for PbO2was developed using bis(1-dimethylamino-2-methyl-2-propanolate)lead(II), Pb(DMAMP)2, and O3as the reactants, with a high growth rate of 2.6 Å/cycle. PbO2readily reduces under low oxygen partial pressures at moderate temperatures making it challenging to deposit ALD PbO2from Pb2+precursors. However, thin films deposited with this process showed small crystalline grains of α-PbO2and β-PbO2, without signs of reduced PbOxphases. The ALD PbO2thin films show the high electrical conductivity characteristic of bulk PbO2. In situ measurements of ALD PbO2film conductivity during growth suggest a reaction mechanism by which sub-surface oxygen mobility contributes to the growth of resistive PbO or PbOxduring the Pb(DMAMP)2surface reaction step, which is only fully oxidized from Pb2+to Pb4+during the O3reaction step. These films were electrochemically reduced to PbSO4in H2SO4and then reoxidized to PbO2, demonstrating their suitability for use as an electrode material for fundamental battery research and other electrochemical applications.

Lanthanum doped hafnium oxide thin films deposited on a lateral high aspect ratio structure using atomic layer deposition: A comparative study of surface composition and uniformity using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

Hafnium oxide (HfO2) thin films doped with lanthanum (La) can achieve ferroelectricity, making the material applicable in transistor and memory technologies. To downscale future devices in the semiconductor industry, the application of the doped HfO2 material requires deposition on complex microscopic three-dimensional (3D) structures. A widely used process for the preparation of doped HfO2 thin films is atomic layer deposition (ALD). With 3D geometries, it is challenging to deposit materials homogeneously and to effectively characterize them. To forego the difficulties in film characterization, two-dimensional (2D) PillarHall lateral high aspect ratio (LHAR) test structures are used. These structures expose a lateral surface to facilitate the conformality analysis of thin films deposited using two different ALD processes. In this work, we aim to further advance the arsenal of analysis techniques used to characterize La doped HfO2 thin films by using x-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) to analyze uniformity and composition. The XPS technique can be applied and established as a method for the optimal analysis of thin films deposited on LHAR structures. Both techniques provide a complementary analysis of material formation, elemental distribution, measurement along the LHAR depth range, and can probe differences between deposition processes.

Effect of Metal Oxide Deposition on the Sensitivity and Resolution of E-Beam Photoresist.

Organic-inorganic hybrid resists offer a solution to the issue of low sensitivity in organic photoresists like poly(methyl methacrylate) (PMMA). In this study, an organic-inorganic hybrid resist (PMMA-Al2O3) with high sensitivity and resolution was prepared by depositing metal oxides into PMMA using sequential infiltration synthesis (SIS). PMMA-Al2O3 was prepared by precisely controlling the number of SIS cycles (<23) in various atomic layer deposition (ALD) processes to facilitate the growth of metal oxides within PMMA pores. The impact of different metal oxide contents and distributions on the sensitivity and resolution of electron beam exposure was investigated. Numerical simulations of the deposit formation within the PMMA pores were performed by solving the pore-scale ALD governing equations fed by the reactor-scale boundary conditions. The gradual pore constriction with SIS cycles was predicted and validated by the experimental charaterizations. The results demonstrated that PMMA-Al2O3 was prepared using 20 SIS cycles, which corresponds to the numerically predicted occurrence of the pore blockage at the upper region of the PMMA layer, exhibiting optimal electron beam (e-beam) resolution while enabling line exposure with a width of 50 nm. While the corresponding sensitivity was lower than those of the samples prepared using 5 and 10 SIS cycles, the degradation of the PMMA structure was affected under exposure. The pattern transfer results showed that the line width was well retained for 20 cycles of deposition because of the high etching resistance of Al2O3. This research is expected to provide an effective approach to developing next-generation high-performance photoresists.

Morphological Evolution of Atomic Layer Deposited Hafnium Oxide on Aligned Carbon Nanotube Arrays.

Microscopic study of the nucleation and growth of atomic layer deposition (ALD) dielectrics onto carbon nanotubes (CNTs) is an essential while challenging task toward high-performance devices. Here, we capture the morphological evolution and growth behaviors of ALD-HfO2 onto SiO2/Si-supported aligned CNT arrays (A-CNTs) under three ALD recipes via cross-sectional high-resolution scanning transmission electron microscopy. The HfO2 in ALD I (200 °C) preferentially nucleates on the SiO2 substrate in heterogeneous growth mode, resulting in films with considerable pinholes, while ALD II (90 °C) and III (90 °C and extra H2O presoak) exhibit homogeneous growth with nucleation on both SiO2 and CNTs, yielding uniform films. Arrangement defects in A-CNTs exacerbate nonuniformity of HfO2 and tube-tube separation plays deterministic roles affecting the HfO2-CNT interfacial morphology. Electrical measurements from A-CNTs metaloxide-semiconductor devices validate these findings. Our investigation contributes valuable insights for optimizing ALD processes for enhanced dielectric integration on A-CNTs in next-generation electronics.

Crystalline phase control of ferroelectric HfO2 thin film via heterogeneous co-doping

Our study investigates heterogeneous co-doped HfO2 thin films integrated into metal-ferroelectric-metal stacks, achieved by incorporating multiple layers doped with various species during the atomic layer deposition process. This approach creates an artificial crystallization temperature gradient across the HfO2 film, influencing the preferred nucleation sites of HfO2 during rapid thermal processing. Our findings demonstrate that the phase composition of the annealed HfO2 film is primarily determined by heterogeneous or homogeneous crystallization processes. In cases of heterogeneous crystallization, where crystallization initiates from nuclei formed at electrode/HfO2 interfaces, grains predominantly crystallize in the orthorhombic phase. Conversely, grains are more likely to crystallize in the monoclinic phase if they originate from nuclei formed at the center of the HfO2 film. Additionally, we observe correlations between the texture of the HfO2 film and the texture of the electrodes.

Boron‐Doped Zinc Oxide Electron‐Selective Contacts for Crystalline Silicon Solar Cells with Efficiency over 22.0%

The exploration of wide‐bandgap metal compound films with excellent passivation and contact properties on crystalline silicon (c‐Si) surface, as alternatives to traditional‐doped Si thin films, holds significant promise for the future enhancement of c‐Si solar cell efficiency. Herein, conductive boron‐doped zinc oxide (ZnO:B) films are deposited by atomic layer deposition (ALD) process and investigated as electron‐selective contacts, in combination with a thin SiOx passivating interlayer. This combination demonstrates a relative low contact resistivity of ≈2 mΩ cm2 and improved passivation quality. Further application of this SiOx/ZnO:B stack as a full‐area electron‐selective passivating contact in proof‐of‐concept n‐type c‐Si solar cells results in a satisfactory power conversion efficiency of over 22.0%. This electron‐selective passivating contact structure, prepared via low‐temperature, simplified, and the compositionally controlled ALD process, offers a promising pathway for the development of high‐efficiency and low‐cost c‐Si solar cells.

Interfacial layer suppression in ZrO2/TiN stack structured capacitors via atomic layer deposition

Controlling the formation of interfacial layers in dynamic random-access memory (DRAM) capacitors is crucial because it affects electrical performance, such as increasing the equivalent oxide thickness. This study investigates the formation of an interfacial layer during atomic layer deposition (ALD) of ZrO2 on TiN electrodes and examines its influence on electrical properties. Utilizing O3 and H2O as oxygen sources, we quantitatively identified notable differences in the formation of the interfacial TiOx layer. Using O3 results in a thicker TiOx layer with fewer impurities, which lowers the leakage current, whereas H2O creates a thinner interfacial layer with higher impurity levels, leading to an increased leakage current. To optimize these effects, we developed a two-step ALD process that combines both oxygen sources, reducing the interfacial layer thickness while maintaining low leakage currents. This approach significantly improved the electrical performance of capacitors. Furthermore, similar results were observed for HfO2/TiN systems, suggesting that our findings are broadly applicable to high-k dielectric materials.

Permittivity enhancement of Al2O3/ZrO2 dielectrics with the incorporation of Pt nanoparticles

Al2O3/ZrO2 (A/Z) layers with embedded Pt nanoparticles (Pt-nps) at the interface of A/Z have been used to create a dielectric film with an enhanced permittivity. The Pt-nps and dielectrics are both grown by the atomic layer deposition process, which is complementary metal–oxide–semiconductor compatible. In order to control the thickness ratio of Pt-nps in the overall dielectrics more easily, the thickness of the ZrO2 layer is changed from 12 to 30 nm with a fixed thickness of 12 nm for Al2O3 and constant growth cycles of 70 for Pt-nps. The results show that the introduction of Pt-nps is beneficial to the enhancement of the dielectric permittivity. As the thickness of ZrO2 is 30 nm, the capacitance density increases from 2.5 to 5.1 fF/μm2 with the addition of Pt-nps, i.e., a doubling of the capacitance density achieved. Additionally, the leakage current at 2 V increases from 1.1 × 10−8 to 1.5 × 10−7 A/cm2. Furthermore, the dielectric breakdown field decreases from 5.4 to 2.7 MV/cm. The electric field distribution simulation and charging–discharging test imply that interfacial polarization is built at the interface of Pt-nps and the dielectric films, which contributes to the dielectric permittivity enhancement, and local electric field increasing in the affinity of Pt-nps gives rise to the deterioration of the leakage current and breakdown electric field.

Bilateral Production Shield Enabling Highly Efficient Perovskite Photovoltaics.

Enhancing the intrinsic stability of perovskite and through encapsulation to isolate water, oxygen, and UV-induced decomposition are currently common and most effective strategies in perovskite solar cells. Here, the atomic layer deposition process is employed to deposit a nanoscale (≈100nm), uniform, and dense Al2O3 film on the front side of perovskite devices, effectively isolating them from the erosion caused by water and oxygen in the humid air. Simultaneously, nanoscale (≈100nm) TiO2 films are also deposited on the glass surface to efficiently filter out the ultraviolet (UV) light in the light source, which induces degradation in perovskite. Ultimately, throughthe collaborative effects of both aspects, the stability of the devices is significantly improved under conditions of humid air and illumination. As a result, after storing the devices in ambient air for 1000h, the efficiency only declines to 95%, and even after 662h of UV exposure, the efficiency remains at 88%, far surpassing the performance of comparison devices. These results strongly indicate that the adopted Al2O3 and TiO2 thin films play a significant role in enhancing the stability of perovskite solar cells, demonstrating substantial potential for widespread industrial applications.