Atmospheric Organometallic Vapor Phase Epitaxy Research Articles

Photoluminescence properties of AlGaP superlattices

AlP GaP ordered superlattices ( o-SL) and disordered superlattices ( d-SL) are grown by atmospheric organometallic vapor phase epitaxy and their photoluminescence (PL) properties are investigated. The PL from AlP m GaP n ( m, n = 1, 2, 3) d-SL is observed clearly though that from AlP 2 GaP 2 o-SL, which has the same average layer thickness as the d-SL, is not observed. The clear peak is observed up to 30 K from AlP m GaP n m, n = 1, 2, 3) d-SL as well as m, n = 2, 4, 6) and m, n = 3, 6, 9) d-SLs. The PL integrated intensity from d-SLs is less dependent on the reduction of the superlattice period.

High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH3. Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds Ith as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies ηD were as high as 21%/facet with a low internal loss α=21 cm−1. In addition Ith as low as 18 mA and ηD as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH3 without compromising on laser performance.

InGaAs/InGaAsP quantum well distributed feedback laser

The authors describe a deep 900-AA first-order grating that was fabricated on the top InGaAsP waveguide layer of a three-quantum-well separate-confinement heterostructure (SCH) wafer to provide for distributed-feedback (DFB) operation at 1.515 mu m. The SCH wafer was grown by atmospheric organometallic vapor-phase epitaxy (OMVPE) and consisted of three InGaAs quantum wells of 80 AA each separated by a 200-AA InGaAsP barrier. On both sides of the quantum-well stack there was approximately=1000 AA of 0.95-eV InGaAsP acting as a waveguide. Semi-insulating InP provided the 1.5- mu m lateral electrical and optical confinement using a semi-insulating planar buried heterostructure configuration. Laser chips of 0.5- and 1-mm cavity lengths were mounted on copper studs and run continuously at room temperature, with current thresholds of 15 and 24 mA, respectively. There was a weak dependence of the current threshold and differential quantum efficiencies on cavity length, which confirms the low internal loss in quantum-well lasers. Below threshold, a stopband of approximately=40 AA was seen in the laser spectrum. Above threshold two DFB modes were usually seen on each side of the stop band, although in some cases a single mode was observed due to the suppression of the other mode. The linewidth was 5-MHz FWHM at 1-mW output power, which represents a marked improvement over previous results. Some improvement was also observed in the linewidth enhancement factor. >

InGaAsP/InP high-power semi-insulating blocked planar buried-heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy

High-power semi-insulating blocked planar buried-heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for the trimethylgallium and AsH3. Current thresholds as low as 20 mA and differential quantum efficiencies ≥20% per facet at 1.3 and 1.5 μm were obtained with power outputs of about 25 mW/facet. These results are similar to SIPBH lasers where liquid phase epitaxy was used to grow the active layer, but because of the better planarity and uniformity of OMVPE-grown material, it appears possible to grow material that can give a high yield of distributed feedback lasers.

High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

A series of GaInAs/InP quantum wells from 10 to 135 Å has been grown by atmospheric organometallic vapor phase epitaxy using pressure balancing techniques. These wells exhibit strong exciton peaks at 4 K and have quantized energy shifts of up to 326 meV. These energy shifts are compared with two simple finite well models (Kronig–Penney and envelope function approximation) using a conduction-band offset of Vc≊40% ΔEg(GaInAs) and are in close agreement with the latter model. The full width half-maximum linewidths indicate an average interface roughness of ≊1 monolayer.