Asymmetric Magnetoresistance Research Articles

Spin polarized current in chiral organic radical monolayers.

The chirality-induced spin selectivity (CISS) effect is the capability of chiral molecules to act as spin filters, i.e. to selectively sort flowing electrons based on their spin states. The application of this captivating phenomenon holds great promise in the realm of molecular spintronics, where the primary focus lies in advancing technologies based on chiral molecules to regulate the injection and coherence of spin-polarized currents. In this context, we conducted a study to explore the spin filtering capabilities of a monolayer of the thia-bridged triarylamine hetero[4]helicene radical cation chemisorbed on a metallic surface. Magnetic-conductive atomic force microscopy revealed efficient electron spin filtering at exceptionally low potentials. Furthermore, we constructed a spintronic device by incorporating a monolayer of these molecules in between two electrodes, obtaining an asymmetric magnetoresistance trend with signal inversion in accordance with the handedness of the enantiomer involved, indicative of the presence of the CISS effect. Our findings underscore the significance of thia[4]azahelicene organic radicals as promising candidates for the development of quantum information operations based on the CISS effect as a tool to control the molecular spin states.

Efficient Spin-Selective Electron Transport at Low Voltages of Thia-Bridged Triarylamine Hetero[4]helicenes Chemisorbed Monolayer.

The Chirality Induced Spin Selectivity (CISS) effect describes the capability of chiral molecules to act as spin filters discriminating flowing electrons according to their spin state. Within molecular spintronics, efforts are focused on developing chiral-molecule-based technologies to control the injection and coherence of spin-polarized currents. Herein, for this purpose, we study spin selectivity properties of a monolayer of a thioalkyl derivative of a thia-bridged triarylamine hetero[4]helicene chemisorbed on a gold surface. A stacked device assembled by embedding a monolayer of these molecules between ferromagnetic and diamagnetic electrodes exhibits asymmetric magnetoresistance with inversion of the signal according to the handedness of molecules, in line with the presence of the CISS effect. In addition, magnetically conductive atomic force microscopy reveals efficient electron spin filtering even at unusually low potentials. Our results demonstrate that thia[4]heterohelicenes represent key candidates for the development of chiral spintronic devices.

Electric modulation of anisotropic magnetoresistance in Pt/HfO2–x /NiO y /Ni heterojunctions

Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption. In solid-state dielectrics, an electric field drives the redistribution of ions to create one-dimensional magnetic conductive nanostructures, enabling the realization of intriguing magnetoresistance (MR) effects. Here, we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO2−x /NiO y /Ni heterojunctions for MR modulation. By adjusting the voltage polarity and amplitude, the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed. This results in the reduction of device resistance by ∼103 folds, and leads to an intriguing partial asymmetric MR effect. We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle, which can be used for magnetic field direction detection. Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

Giant chirality-induced spin selectivity of polarons

The chirality-induced spin selectivity (CISS) effect gives rise to strongly spin-dependent transport through many organic molecules and structures. Its discovery raises fascinating fundamental questions as well as the prospect of possible applications. The basic phenomenology, a strongly asymmetric magnetoresistance despite the absence of magnetism, is now understood to result from the combination of spin-orbit coupling and chiral geometry. However, experimental signatures of electronic helicity were observed at room temperature, i.e., at an energy scale that exceeds the typical spin-orbit coupling in organic systems by several orders of magnitude. This work shows that a new energy scale for CISS emerges for currents carried by polarons, i.e., in the presence of strong electron-phonon coupling. In particular, we found that polaron fluctuations play a crucial role in the two manifestations of CISS in transport measurements -- the spin-dependent transmission probability through the system and asymmetric magnetoresistance.

The features of the magnetoresistance of carbon nanotubes modified with Fe

Two specimens of modified multi-wall carbon nanotubes (MWCNT) with a mass fraction of iron of 0.20 and 0.29 have been obtained by the method of metal reduction from aqueous salt solution. According to structural and phase investigations, modified MWCNT contain Fe3C, α-Fe (ferromagnetic phase), and iron oxides FeO and Fe2O3 (antiferromagnetic phases with a Néel temperature of 188 K and 260 K, respectively) particles up to 8 nm in size. It is experimentally found that for MWCNT modified simultaneously by several ferromagnetic phases with different coercive forces, a giant magnetoresistive effect is observed at room temperature. For MWCNT modified with only one ferromagnetic phase, the giant magnetoresistance has not been experimentally detected. With temperature decrease, the magnetoresistance dependence on magnetic field for such modified nanotubes acquires a specific butterfly-like form, which is characteristic of the magnetic ordering of ferromagnetic and antiferromagnetic phases due to exchange anisotropy. For MWCNT modified with only one ferromagnetic phase there has been an effect of asymmetric magnetoresistance, which is related to the presence in the specimen of inhomogeneous transverse Hall voltages due to the pronounced spin-orbit interaction of conduction electrons and magnetic moments of the magnetic phase, and an anisotropic magnetoresistive effect.

Observation of the Dzyaloshinskii–Moriya interaction via asymmetry in magnetization reversal

Due to its importance in future spintronic-based memory devices, the Dzyaloshinskii–Moriya interaction (DMI) has been under intense investigation recently. Yet the feasibility of developing straightforward DMI measurement methods, especially using quasi-static tools, is debatable. Here, we present the observation of a shifted, asymmetric magnetization reversal manifested by interfacial DMI (iDMI) via magnetoresistance (MR) measurements for the first time. A shifted asymmetric MR response results from iDMI in an ultrathin symmetric unpatterned [Ni80Fe20/Pt] ×10 multilayer stack. Moreover, to reveal the presence of iDMI, we have experimentally seen iDMI from nonreciprocity in spin-wave dispersion using Brillouin light-scattering. Also, as a previously developed quasi-static method, we compare the MR results with the magneto-optical Kerr effect with the observed MR results. Our findings open pathways towards direct observation of iDMI in magnetic multilayers.

Electrical nucleation, displacement, and detection of antiferromagnetic domain walls in the chiral antiferromagnet Mn3Sn

Antiferromagnets exhibiting distinctive responses to the electric and magnetic fields have attracted attention as breakthrough materials in spintronics. The current-induced Néel-order spin-orbit torque can manipulate the antiferromagnetic domain wall (AFDW) in a collinear CuMnAs owing to a lack of local inversion symmetry. Here, we demonstrate that the electrical nucleation, displacement, and detection of AFDWs are also possible in a noncollinear antiferromagnet, i.e., chiral Mn3Sn with local inversion symmetry. The asymmetric magnetoresistance measurements reveal that AFDWs align parallel to the kagome planes in the microfabricated wire. Numerical calculation shows these AFDWs consist of stepwise sub-micron size Bloch wall-like spin textures in which the octupole moment gradually rotates over three segments of domain walls. We further observed that the application of a pulse-current drives these octupole based AFDWs along the wire. Our findings could provide a guiding principle for engineering the AFDW structure in the chiral antiferromagnetic materials.

Light-Induced-Magnetoresistance in p-n Junction Device

It is highly desirable to provide extra functionality for p-n junction to bypass the limits to Moore’s law. By combining magnetoelectric and photovoltaic effects of p-n junctions, we demonstrate a novel light-induced magnetoresistance (MR) effect, that the photovoltage in the conventional p-n junction can be significantly tuned by magnetic field. In contrast to the symmetric MR driven by external electric field, light-induced MR presents an asymmetric behavior at positive and negative magnetic induction. Theoretical fits using photovoltaic transport equations further reveal that the asymmetric MR induced by light directly reflects the asymmetric geometric of the space-charge region in p-n junction under the magnetic induction. The results not only further confirm our MR model of p-n junction, but also provide a new route by using magnetic control of energy flow in light harvest.

Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers

The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR.

Effects of the partial substitution of Ni by Cr on the transport, magnetic, and magnetocaloric properties of Ni50Mn37In13

The structural, magnetic, and magnetotransport properties of Ni50-xCrxMn37In13 Heusler alloys have been synthesized and investigated by x-ray diffraction (XRD), field and pressure dependent magnetization, and electrical resistivity measurements. The partial substitution of Ni by Cr in Ni50Mn37In13 significantly improves the magnetocaloric effect in the vicinity of the martensitic transition (TM). This system also shows a large negative entropy change at the Curie temperature (TC), making it a candidate material for application in a refrigeration cycle that exploits both positive and negative magnetic entropy changes. The refrigeration capacity (RC) values at TM and TC increase significantly by more than 20 % with Cr substitution. The application of hydrostatic pressure increases the temperature stability of the martensitic phase in Ni45Cr5Mn37In13. The influence of Cr substitution on the transport properties of Ni48Cr2Mn37In13 is discussed. An asymmetric magnetoresistance, i.e., a spin-valve-like behavior, has been observed near TM for Ni48Cr2Mn37In13.

Asymmetric magnetoresistance in the graphite intercalation compounds with cobalt

ABSTRACTThe results of measurements of the magnetoresistance for graphite intercalation compounds with cobalt based on highly oriented pyrolytic graphite and fine crystalline pyrolytic graphite in the temperature range from 1.6 K to 293 K and in a magnetic field up to 16 T are presented. For the investigated intercalation compounds, the effect of asymmetry of the magnetoresistance relative to the magnetic field direction is revealed. It is shown that this effect can be satisfactorily explained within the Segal model of asymmetric magnetoresistance in thin films with large magnetic anisotropy.

Robust quantum oscillations with non-zero Berry phase in Bi 2 Te 3

Abstract We performed angle dependent magnetoresistance study of a metallic single crystal sample of Bi2Te3. We find that the magnetoresistance is highly asymmetric in positive and negative magnetic fields for small angles between the magnetic field and the direction perpendicular to the plane of the sample. The magnetoresistance becomes symmetric as the angle approaches 90°. The quantum Shubnikov de-Haas oscillations are symmetric and show signatures of topological surface states with Dirac dispersion in the form of non-zero Berry phase. However, the angular dependence of these oscillations suggests a complex three dimensional Fermi surface as the source of these oscillations, which does not exactly conform with the six ellipsoidal model of the Fermi surface of Bi2Te3. We attribute the asymmetry in the magnetoresistance to a mixing of the Hall voltage in the longitudinal resistance due to the comparable magnitude of the Hall and longitudinal resistance in our samples. This provides a clue to understanding the asymmetric magnetoresistance often seen in this and similar materials. Moreover, the asymmetric nature evolves with exposure to atmosphere and thermal cycling, which we believe is either due to exposure to atmosphere or thermal cycling, or both affecting the carrier concentration and hence the Hall signal in these samples. However, the quantum oscillations seem to be robust against these factors which suggests that the two have different origins.

Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

Topological insulator based spin valve devices: Evidence for spin polarized transport of spin-momentum-locked topological surface states

Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TIs). It underlies the iconic topological protection (suppressing elastic backscattering) of TSS and is foundational to many exotic physics (e.g., majorana fermions) and device applications (e.g., spintronics) predicted for TIs. Based on this spin-momentum locking, a current flowing on the surface of a TI would be spin-polarized in a characteristic in-plane direction perpendicular to the current, and the spin-polarization would reverse when the current direction reverses. Observing such a spin-helical current in transport measurements is a major goal in TI research and applications. We report spin-dependent transport measurements in spin valve devices fabricated from exfoliated thin flakes of Bi2Se3 (a prototype 3D TI) with ferromagnetic (FM) Ni contacts. Applying an in-plane magnetic (B) field to polarize the Ni contacts along their easy axis, we observe an asymmetry in the hysteretic magnetoresistance (MR) between opposite B field directions. The “polarity” of the asymmetry in MR can be reversed by reversing the direction of the DC current. The observed asymmetric MR can be understood as a spin-valve effect between the current-induced spin polarization on the TI surface (due to spin-momentum-locking of TSS) and the spin-polarized ferromagnetic contacts. Our results provide a direct transport evidence for the spin helical current in TSS.

Asymmetric magnetoresistance in bulk In‐based off‐stoichiometric Heusler alloys

AbstractIt has been found that Ni50Mn35In14B exhibits with increasing temperature a first‐order magnetostructural phase transition from a low‐magnetization martensitic phase to a high‐temperature ferromagnetic austenitic phase at TM∼315 K as observed from magnetization M(T) curves with H=0.05 T. A shift in TM of about 12 K towards lower temperatures has been detected under application of a 5T magnetic field. An asymmetric magnetoresistance (spin‐valve‐like behavior) has been observed in the vicinity of TM at 304 K after the initial application of magnetic field that could be related to the kinetic arrest and de‐arrest of a fractional austenite phase in the vicinity of phase co‐existence. A possible origin of a spin‐valve‐like MR in Ni50Mn35In14B, and its relation to structural, magnetic, and magnetocaloric properties, has been discussed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Strong asymmetrical bias dependence of magnetoresistance in organic spin valves: the role of ferromagnetic/organic interfaces

We report a highly asymmetric magnetoresistance (MR) bias dependence, with the inverse MR peaking at a negative bias and a sign reversal occurring at a positive bias in prototypical La0.7Sr0.3MnO3 (LSMO)/Alq3/Co organic spin valve (OSV) with a tunnel barrier between LSMO and Alq3. This behavior is in strong contrast with the commonly found inverse MR in entire bias range for LSMO/Alq3/Co OSVs. The MR bias voltage dependence is independent on the type of the tunnel barrier, either SrTiO3 or Al2O3. Together with first-principle calculations, we demonstrate that the strongly hybridized Co d-states with Alq3 molecules at the interface are responsible for the efficient d-states spin injection and the observed MR bias dependence is originated from the energy dependent density of states of Co d-states. These findings open up new possibilities to engineer interfacial bonding between ferromagnetic materials and a wide variety of molecule selections for the desired spin transport properties.

Asymmetric magnetoresistance of nanowires with perpendicular anisotropy seen as a contribution from the contacts

We report longitudinal magnetoresistance of 50 nm wide FePt and 2 μm wide CoPt wires with perpendicular anisotropy. In addition to magnon and domain wall magnetoresistances, which are symmetric in field, there appears an asymmetrical voltage signal due to the extraordinary Hall effect, usually understood as the effect of circulating currents at the vicinity of a domain wall. We show that in nanowires it can alternatively be seen as a contribution of the electrical contacts. The symmetries and amplitudes of the observed effect are found to be in good agreement with a simple model.

Asymmetric magnetoresistance in an exchange bias Co/CoO bilayer

Magnetoresistance (MR) measurements are carried out on a Co(8 nm)/CoO(3.5 nm) bilayer in the exchange bias (EB) state prepared by molecular beam epitaxy. With the applied magnetic field parallel to the current, the EB MR curves show an asymmetric behavior about the minimum, in contrast to the symmetric one for non-EB systems. We generalize a well-known analytical expression used for the field dependence of the MR of paramagnets. Our generalization incorporates coercivity and EB in a new phenomenological MR expression. Excellent fits of the latter to the experimental MR data are achieved, showing the way to use MR techniques for the quantitative characterization of EB systems. Furthermore, the temperature dependence of the EB field obtained from MR loops can be described with a power law, which yields a value of 96.6 K for the EB blocking temperature, which is significantly below the Néel temperature of 293 K for bulk CoO.

Magnetoresistance in an aluminum nanoparticle with a single ferromagnetic contact

It is found that the magnetoresistance of a nanometer-scale Al particle, attached between a ferromagnetic and an Al lead, has strong asymmetry with respect to the bias voltage. The asymmetric magnetoresistance is explained in terms of the injection of a spin-polarized current from the ferromagnetic lead and the spin accumulation in the particle. The magnetic moment in the particle is parallel to the magnetic field, which is not collinear with the magnetization of the ferromagnetic lead. The field direction changes either discontinuously as the magnetization switches, or continuously as an external magnetic field is being varied, explaining the magnetoresistance.

Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling.