Assisted Atom Probe Tomography Research Articles

Laser-Assisted Atom Probe Tomography of Deformed Minerals: A Zircon Case Study.

The application of atom probe tomography to the study of minerals is a rapidly growing area. Picosecond-pulsed, ultraviolet laser (UV-355 nm) assisted atom probe tomography has been used to analyze trace element mobility within dislocations and low-angle boundaries in plastically deformed specimens of the nonconductive mineral zircon (ZrSiO4), a key material to date the earth's geological events. Here we discuss important experimental aspects inherent in the atom probe tomography investigation of this important mineral, providing insights into the challenges in atom probe tomography characterization of minerals as a whole. We studied the influence of atom probe tomography analysis parameters on features of the mass spectra, such as the thermal tail, as well as the overall data quality. Three zircon samples with different uranium and lead content were analyzed, and particular attention was paid to ion identification in the mass spectra and detection limits of the key trace elements, lead and uranium. We also discuss the correlative use of electron backscattered diffraction in a scanning electron microscope to map the deformation in the zircon grains, and the combined use of transmission Kikuchi diffraction and focused ion beam sample preparation to assist preparation of the final atom probe tip.

Interpreting atom probe data from chromium oxide scales

Picosecond-pulsed ultraviolet-laser (UV-355nm) assisted atom probe tomography (APT) was used to analyze protective, thermally grown chromium oxides formed on stainless steel. The influence of analysis parameters on the thermal tail observed in the mass spectra and the chemical composition is investigated. A new parameter termed “laser sensitivity factor” is introduced in order to quantify the effect of laser energy on the extent of the thermal tail. This parameter is used to compare the effect of increasing laser energy on thermal tails in chromia and chromite samples. Also explored is the effect of increasing laser energy on the measured oxygen content and the effect of specimen base temperature and laser pulse frequency on the mass spectrum. Finally, we report a preliminary analysis of molecular ion dissociations in chromia.

Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Materiaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants and nanostructural features that are vital for nanoelectronics. Because of trajectory aberrations, APT images are subjected to distortions and local composition at the nm scale may either be biased. Procedures accounting for these effects were applied so that to correct images.

Growth rate model and doping metrology by atom probe tomography in silicon nanowire

AbstractSilicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in‐situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To study these two types of SiNWs a general growth rate model is presented. The fit curves from this model are consistent with our experimental data. In both growing conditions the SiNW growth rate as a function of their diameter are compared and discussed. The p‐type SiNWs have also been prepared by adding diborane into precursor. The doping metrology in an individual SiNW is realized by laser assisted Atom Probe Tomography (APT). We have shown that the doping atoms (e.g. B) can incorporate into SiNW and an accurate quantification can be given (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)