The realization of single crystal and bicrystal films of superconducting materials is of great interest because they allow the investigation of the intragrain performance as well as the understanding of potential limitations in the grain boundary transparency. For many years, the realization of a high-quality (Ba,K)Fe2As2 film has been challenging. Here, the realization of (Ba,K)Fe2As2 epitaxial thin films on single crystal SrTiO3(001) and [001]-tilt-type SrTiO3 bicrystal substrates with high superconducting properties is demonstrated. The epitaxial growth of (Ba,K)Fe2As2 was enabled by implementing an undoped BaFe2As2 buffer layer between the SrTiO3 substrate and (Ba,K)Fe2As2 film. The film exhibits a high Tc of 38.0 K and an extremely high Jc of 14.3 MA/cm2 at 4.2 K. Artificial grain boundaries of (Ba,K)Fe2As2 were also successfully achieved on bicrystals with misorientation angles up to 36.8° by the same preparation methods. The artificial grain boundaries exhibited an identical Tc of 38.0 K and an excellent transfer of the grain orientation from the bicrystal substrates with high crystallinity comparable to that of the high-quality Ba(Fe,Co)2As2 films. This enables the investigation of the intrinsic (Ba,K)Fe2As2 grain boundary nature, which will clarify its potential for superconducting applications, like Josephson junctions, wires, and magnets.
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