Applications In Photovoltaic Devices Research Articles

Al2B12C with High Ambipolar Mobility Driven by a Unique B-C Framework.

The development of materials with high ambipolar mobility is pivotal for advancing multifunctional applications, yet such materials remain scarce. Presently, cubic boron arsenide (BAs) stands out as the premier ambipolar material, demonstrating an ambipolar mobility of ∼1600 cm2 V-1 s-1 at room temperature [Science 2022, 377, 433 and Science 2022, 377, 437]. Herein, we illustrate that semiconducting Al2B12C, featuring a nonclathrate B-C framework in which a C atom bonds to the vertices of four distorted hexagonal antiprism B12 units via quasi-sp3 hybridization, is predicted to possess ambipolar carrier transport behavior. Its ambipolar mobility can reach up to ∼2095 cm2 V-1 s-1. The hole transport originates from the C pz orbitals that trap the electrons of Al atoms at the valence band maximum, forming a C-Al-C hole channel along the c-axis direction, whereas electron transport stems from the π electrons in B12 units. For Al2B12C, polar optical phonon scattering serves as the primary mechanism limiting mobility. Additionally, it displays a high absorption coefficient (105 cm-1) in the visible spectrum. These appealing properties make Al2B12C a highly promising environmentally friendly semiconductor for applications in electronics and photovoltaic devices.

Optical quantization of carbon-incorporated polysilicon and its potential application in photovoltaic devices

The polysilicon (poly-Si) in tunnel oxygen passivated contact (TOPCon) structures delivers outstanding passivation performance; nevertheless, it also introduces some level of parasitic absorption, particularly noticeable in the medium and long wavelength bands. Here, we synthesized carbon (C)-incorporated poly-Si by introducing carbon into poly-Si through the plasma enhanced chemical vapor deposition (PECVD) method, aiming to mitigate parasitic absorption. Our focus was on investigating the impact of parameters such as C content and annealing temperature on the optical properties of poly-Si, including the refractive index and extinction coefficient. Additionally, we calculated the free carrier absorption (FCA) through the reflectance and transmittance of the material. It is found that the FCA in the long wavelength band decreases with increasing C incorporating, while it increases with higher annealing temperature. Furthermore, simulations revealed that the parasitic absorption of C-incorporated poly-Si (with the CH4/SiH4 flows ratio of 3) in the back plane of TOPCon cells is approximately 0.38 mA/cm2 per 100 nm, less than 0.52 mA/cm2 per 100 nm from the conventional poly-Si. Therefore, the results show the advantages of C-incorporated poly-Si in optical properties.

Modelling of (N-vinylcarbazole)/Fullerene nanoheterojunction for organic solar cells and photovoltaics applications – A DFT Approach

The current manuscript depicts the construction of a novel hybrid carbon nanomaterials with fascinating electronic and chemical properties and tunable energy bandgap of a nano heterojunction comprising (9-vinyl carbazole), VK and fullerene, C60. A comprehensive investigation of VK/C60 adsorption surface is conducted using ab-initio density functional theory calculations with van der Waals corrections (GGA+vdW) implemented. The novel nanoheterostructure interfaces synthesized by DFT methods have low-bandgap characteristics (1.112–1.223 eV), broaden absorption wavelengths and photovoltaic characteristics. This novel VK/C60 nanoheterostructure composites have finite bandgaps and good stability and, therefore, have promising applications for photovoltaic devices. Optoelectronic features of all three developed systems are recommended for future solar cell applications. The studies reveal that the VK/C60 nanoheterojunctions can behave as efficient electron donor-acceptor components in organic solar cells (OSCs) that make them potential candidates for the development of low-cost optoelectronic devices. The band gap values calculated in this work are low enough to make the nanoheterostructures exceedingly promising for photovoltaic applications.

Semiconducting biomass-based amorphous carbon films and their potential application in photovoltaic devices

Amorphous carbon (aC) is highly appealing because of its unique structure, electrical and optical properties, making it appropriate for various applications, especially in energy conversion. This work presents a comprehensive study on the synthesis of aC materials, including both intrinsic (i-type) and doped conditions (p- and n-type), to enhance the performance of photovoltaic films. Carbon materials are derived from biomass using a straightforward and environmentally conscious technique. The obtained carbon compound demonstrates an amorphous state with a substantial prevalence of the sp2 C=C component. Raman spectroscopy and electron microscopy confirmed the stacking of 2D layers forming a multilayer graphene structure. The carbon compound prepared AC films deposited onto a quartz glass surface via spray coating. The films have a thickness ranging from 247 to 478 nm. The dielectric constants of the optical parameters reveal resonant exciton features at a photon energy of ∼3.8 eV, whereas the real component exhibits semiconductive properties. The refractive indices of the p-, i-, and n-layers, which have gap energies in decreasing order, demonstrate a decline. The optical conductivity of aC is higher than that of amorphous silicon, specifically 0.54 × 103Ω−1cm−1, 0.48 × 103 Ω−1cm−1, and 0.53 × 103 Ω−1cm−1 for the p-, i-, and n-type films, respectively. Based on this outcome, it is reasonable to suggest that the recently developed material is potentially important as a photovoltaic device.

Optimizing Na2EDTA concentration for enhanced properties of SILAR - deposited CTS thin films

Abstract This study investigates the impact of varying Na2EDTA concentrations on the properties of copper tin sulfide (CTS) thin films deposited on soda lime glass substrates using the successive ionic layer adsorption and reaction (SILAR) method. The aim is to optimize CTS thin film growth for photovoltaic technology applications. CTS thin films were prepared using SILAR with Na2EDTA concentrations of 0.01 M, 0.04 M, and 0.07 M, resulting in samples CTS01, CTS04, and CTS07. Characterization techniques included XRD, SEM, EDAX, FTIR, I-V curves, transmittance spectra, and Tauc plots. The results reveal significant variations in film properties with changing Na2EDTA concentration. XRD patterns indicate polycrystalline films with an orthorhombic CTS phase. SEM images show smooth, dense films with localized clusters. FTIR spectra detect hydrocarbon chains, aromatic rings, and hydroxyl or ether groups. The I-V curves of three samples (CTS01, CTS04, and CTS07) show a voltage-dependent transition from semiconducting to ohmic behavior. The CTS01 exhibits superior conductivity (3.13 × 10−5/Ωm), while the samples’ resistance and conductivity values show an inverse relationship. Transmittance curves display low UV transmittance and high visible transmittance,suggests that the samples are highly absorptive in the UV range and become more transparent in the visible range, indicating potential applications in optical filtering and photovoltaic devices. Tauc plots estimate band gap energies of 3.66, 3.89, and 3.23 eV, indicating high band gap energies suitable for buffer layers in solar cells. The correlation between band gap energy and crystallite size as a function of Na2EDTA concentration is also observed. The study demonstrates the importance of optimizing Na2EDTA concentration for achieving high-quality CTS thin films with desirable properties for photovoltaic applications. The findings highlight the potential of CTS thin films for solar cells, optical filtering, and photonic devices.

Investigation of optical and thermoelectric characteristics of novel zintl-phase alloys CaZn2X2 (X = P, As, Sb) for green energy applications

Abstract This study examines the photovoltaic and thermoelectric response of calcium-based novel Zintl-phase alloys CaZn2X2 (X = P, As, Sb). The structural, optoelectronics, and transport features of Zintl CaZn2X2 (X = P, As, Sb) compounds have been analyzed using the full potential linearized augmented plane wave (FPLAPW) technique. Investigations on formation energy and phonon dispersion have confirmed the formation and dynamical stabilities. These compounds exhibit a semiconductor behavior, as their predicted bandgap values: 1.76 eV for CaZn2P2, 1.14 eV for CaZn2As2, and 0.32 eV for CaZn2Sb2. By investigating the optical properties, we have discovered their potential applicability in optoelectronic and photovoltaic devices, as evidenced by the optical response of these phases. The traditional Boltzmann transport theory has assessed transport characteristics against temperature and chemical potential. Significantly higher values of the Seebeck coefficient are achieved at room and elevated temperatures. Moreover, the power factor demonstrates a linear relationship with rising temperature. The remarkable optoelectronic properties and exceptional power factor values suggest that these materials are suitable for deployment in photovoltaic and transport devices.

Optoelectronic properties of novel layered materials under encapsulation: 2D Copper Iodide and Silver Iodide

Many novel freestanding two-dimensional materials can be stabilized when placed over a proper substrate or put under encapsulation. Among the different possibilities, graphene and h-BN are commonly used due to their availability and compatibility. In that scenario, it is important to understand how the possible interactions between the core and substrate/encapsulating layers as well as the lattice mismatch affect the optoelectronic properties of the core material. In this work, we use ab initio calculations to study the structural and optolectronic properties of the recently synthesized 2D CuI and AgI layers, which are stabilized under graphene encapsulation (Mustonen et al. (2022)). In addition, the possibility of h-BN encapsulation is also explored. We find that the optoelectronic properties of the core materials are greatly preserved under encapsulation—especially under h-BN. Their bandgaps suffer small variations that mainly originate from the internal strain that results from supercell relaxation. We also see a rehybridization of the electronic bands from the core material whenever they cross or lie close to bands from the encapsulating layers, as expected. This effect is particularly strong for graphene encapsulation. The optical absorption profiles show a combination of features coming from the spectra of the isolated layers with minor modifications introduced by these effects. In particular, a strong and broad absorption is seen in the UV range when using h-BN. Finally, we study a possible CuI-AgI heterobilayer, both isolated and under encapsulation. Interestingly, the structure presents a type-II band alignment that is well preserved under encapsulation, with potential applications in novel photovoltaic devices.

Polyfluorene-based conjugated nanocomposites with in-situ gold nanoparticles: Synthesis via rational chemical passivation and characterization of supramolecular fibrillar structures

We present a rational and innovative chemical approach for synthesizing and characterizing conjugated polymer nanocomposites as direct passivation of gold nanoparticles (AuNPs), highlighting intrinsic morphologies and distinct photophysical properties in the solid state. The pioneering synthesis of polyfluorene with thiol, LaPPS79.10, revolutionized its application as a direct passivator of AuNPs, resulting in stable nanocomposites with the capacity for storage in the dry state and subsequent redispersion in organic solvent. The presence of AuNPs with average diameters of 3.5 ± 1.3 nm induced the formation of an interconnected fibrillar supramolecular network (ribbon-like) and several microdomains in the nanocomposite (LaPPS79.10+AuNPs), correlated by XRD, TEM and SEM measurements. Characterization of the polyfluorene precursor derivative, LaPPS10, revealed bundle-like morphologies with aggregation-induced emission (AIE). Introducing thiol groups into the intermediate structure induced polymer chain organization (LaPPS79.10), leading to unique straw-like and lenticular bundle morphologies, disrupting the non-planar π-π packing and quenching the emission, a case of aggregation-caused quenching (ACQ). In LaPPS79.10+AuNPs, the proximity of the π system to the Au localized surface plasmon resonance (LSPR) resulted in high absorption, negligible self-absorption, and efficient emission quenching, as well as improved thermal resistance compared to the original polymer. The unprecedented discovery of the properties resulting from the electronic interaction between the π system of the AuNPs passivating polymer and the effects of plasmonic resonance represents a significant advance in nanoscience, opening new perspectives for exciting applications in organic photovoltaic devices and metamaterials.

Dielectric relaxation and electrical conduction mechanism via hopping of polarons in (Pb0.3Bi0.7)(Zn0.1Nb0.2Fe0.7)O3 perovskite compound: A study based on CBH model

This work analyses the dielectric and conducting properties of the PZN-modified BF solid solution (0.3PZN-0.7BF) synthesized at 850 °C by solid-state reaction. The Rietveld refinement of 0.3PZN-0.7BF solid solution displays three phases: tetragonal Pb(Fe0.5Nb0.5)O3 (76.68 %), α-BZN (21 %), and Bi2Fe4O9 (2.32 %). Dielectric parameter frequency dispersion implies normal ferroelectricity. Thermal relaxation shifts dielectric loss, imaginary impedance (Z''), and loss modulus (M'') peaks to higher frequencies. Electrical investigation indicates electrode polarization, dipole orientation, charge ordering, oxygen vacancies, and defects. Investigations suggest p-type polarons dominate conductivity. At room temperature and 1 MHz, the compound has 117 dielectric constant and 0.009 tangent loss. Conductivity and impedance testing show semi-conductivity. UV–Vis spectrum investigation shows a 1.97 eV energy band gap, supporting its semiconductor properties. Photovoltaic and optoelectronic device applications benefit from 0.3PZN-0.7BF solid solution optical and electrical property studies.

Exploration of Physical, Optical, and Electrical Properties of Mg-Doped CeO2 Nanoparticles for Photovoltaic Device Applications

Exploration of Physical, Optical, and Electrical Properties of Mg-Doped CeO2 Nanoparticles for Photovoltaic Device Applications

Ambient Stability of Sodium-Doped Copper Oxide Obtained through Thermal Oxidation.

The ambient stability of copper oxide layers produced through thermal oxidation is a critical factor for their application in advanced photovoltaic devices. This study investigates the long-term stability of thermally grown sodium-doped copper oxides fabricated at 300 °C, 500 °C, and 700 °C. The structural, optical, and electronic properties of these oxide layers were examined after a 30-day period to understand how thermal oxidation temperature and sodium doping influence the durability and properties of copper oxide films. The results indicate that the stability of thermal copper oxide increases with oxidation temperature. The film produced at 700 °C maintained consistent optical properties, work function value, and structural integrity over time, demonstrating their robustness against environmental degradation. In contrast, the layers produced at lower temperatures (300 °C and 500 °C) showed more significant changes due to continued oxidation and adsorption from ambient.

Synthesis, Structural, Morphological, and Optical Properties of Promising Lead-Free Double Perovskite Na2CuBiBr6: A Sustainable Material for Photovoltaic Applications

This work primarily focuses on synthesizing and evaluating the structure, morphology, and optical features of double perovskite Na2CuBiBr6 forphotovoltaic devices. In the present investigation, Na2CuBiBr6 is created by a solution-based antisolvent recrystallization approach. A comprehensive experimental investigation is conducted on the Na2CuBiBr6 double perovskite, encompassing its structural configuration, morphology, and optical features. X-ray diffraction analysis verifies the creation of Na2CuBiBr6 double perovskite and showcases its exceptional phasestability in the cubic phase. Scanning electron microscopy reveals the presence of multidirectional crystals ofNa2CuBiBr6crystals. The presence of polycrystalline cubic Na2CuBiBr6 is confirmed using transmission electron microscopy and electron diffraction investigation. In addition, energy-dispersive X-ray spectroscopy demonstrates the consistent distribution of elements within Na2CuBiBr6. UV–vis spectroscopy reveals a band gap of 1.37 eV. The optical characteristics demonstrate that Na2CuBiBr6 exhibits a greater absorbance level and a lower reflectivity level within the visible spectrum. The results of this study suggest that the Na2CuBiBr6 double perovskite, which is both lead-free and environmentally benign, has significant potential for applications in photovoltaic and thermoelectric devices.

Impact of Fe-doping on magneto-optoelectronic properties of beryllium sulfide (BeS): A first principles insight

The investigation of electronic, magnetic, structural, and optical properties of Be1-xFexS alloys is carried out by utilizing FP-LAPW method based on density functional theory (DFT) calculations. Fe-doped BeS exhibits half-metallic ferromagnetic behaviour at all doping concentrations, transforming it as favourable contender for spintronic devices. Our findings reveal the presence of 100 % spin polarization of electronic states. The calculated values of magnetic moments are 4.0, 8.0, and 16.0 μB for Be0.9375Fe0.0625S, Be0.875Fe0.125S and Be0.75Fe0.25S, respectively. The pristine BeS compound adopts a cubic close packing structure, known as the zinc blende structure, with the space group F-43m. The static values of R(0) are observed to be 0.21, 0.56, and 0.72 for Fe doped BeS at Be0.9375Fe0.0625S, Be00875Fe0.125S and Be0.75Fe0.25S, respectively. The maximum values of σ(ω) are computed as 16375.9 (1/Ω cm) for 6.25 %, 14336.5 (1/Ω cm) for 12.5 %, and 11002.1 (1/Ω cm) for 25 % Fe doped BeS. The present study unveils maximum optical absorption and conductivity in the ultraviolet (UV) region, suggesting its potential application in UV-based photovoltaic devices.

Cyanoacetamide co-sensitizers DY-1 and DY-2: Unveiling a promising path to highly efficient photovoltaic devices

This paper presents a novel approach for enhancing the efficiency of dye-sensitized solar cells (DSSCs) through the co-sensitization of cyanoacetamide-based dyes DY-1 and DY-2 with N3 dye. The synthesis and characterization of DY-1 and DY-2 co-sensitizers are described and their potential applications in photovoltaic devices are investigated. The absorption properties of DY-1 and DY-2 were analyzed, revealing their efficient light absorption in the visible range. The co-sensitization of DY-1-2 with N3 dye demonstrated a significant enhancement in photovoltaic efficiency, ranging from 7.40 % to 7.92 %. The reasons for this efficiency enhancement were thoroughly analyzed and attributed to several factors. First, the combination of DY-1-2 with the N3 dye led to a broader light absorption spectrum, enabling more efficient utilization of incident photons. Additionally, co-sensitization facilitates efficient charge separation and injection processes, contributing to improved photocurrent. The acid-base co-sensitization approach further enhances the overall efficiency by maximizing the charge transfer and coverage on the semiconductor surface. This study sheds light on the development of novel sensitizers to enhance the performance of DSSCs, and the findings contribute to the advancement of photovoltaic devices.

Theoretical investigation on electronic, optical and phonon properties of compound semiconductors suitable for photovoltaic device applications

The III-V group semiconductors have extensive technological applications in the solar cells and light-emitting diodes. The electronic, dynamical, and optical properties of GaSb, GaP, InAs, GaAs, AlSb and AlAs semiconductors are comprehensively analysed using first-principle calculations of the density functional theory. The GGA computed band gaps are in the solar spectrum and found to be low effective charge due to high dispersion in the band structures. The acoustic phonons and optical phonons are obtained in the energy range of 0–33 meV and 21–55 meV, respectively. These phonon results have suggested that all the crystal structures are dynamically stable. Above electronic and phonon results are used to analyse the optical properties. Generally, optical properties are affected by electron-phonon interaction via inter-bond transitions. The phonon influenced dielectric function could effectively enhance the light absorption by electron-phonon coupling which is useful to improve the efficiency of solar cell. Particularly, the phonon role in the shaping of optical absorption has been analysed based on the electron-phonon interaction. The optical absorption shows significant optical absorption (>105 cm−1) for all the semiconductors useful in solar cell applications.

Physical properties of InxSey and CuInSe2 thin films with potential application in radiation detectors

A study of InxSey and CuInSe2 thin films processed by the thermal co-evaporation technique by evaluating its physical properties is carried out. Both InxSey as well as CuInSe2 thin films were synthesized by multi-source thermal co-evaporation technique, using Knudsen-type effusion cells. The optical, structural, electrical, and morphological properties of each film were analyzed in order to determine the feasibility at the formation of a p-CuInSe2/n-InxSey heterojunction. InxSey films exhibited bandgap values in the range of 2.4–2.7 eV which was determined by UV–vis spectroscopic analysis. Vibrational modes associated to In2Se3 as well as Se are presented in the InxSey films according to Raman studies. The irregular morphology of the grains on the InxSey surface, with an average size of 380 nm are related to both In2Se3 and Se materials according to Raman spectroscopy and Scanning Electron Microscopy analysis. The InxSey thin films showed resistivity vales around 10–3 Ω·cm. The Hackee´s figure of Merit (FOMH) analysis supported the physical assumption that InxSey thin films are feasible to be used as window layer in a photovoltaic device because of the high values of FOMH obtained for samples processed at 300 °C. On the other hand, an influence on the morphology of the CuInSe2 films was observed when the films were synthetized at different substrate temperature. Uniform CuInSe2 films with agglomerated cauliflower-like grains with an average size of 1.8 μm were observed by SEM. The presence of binary phases within the CuInSe2 compound were detected through Raman and x-ray characterization. Average crystallite size of 61 nm and microstrain around 2.5 × 10–3 were estimated for the CuInSe2 films through x-ray analysis. According to the physical properties analyzed the InxSey/CuInSe2 semiconductor bilayer can be a suitable candidate for application in photovoltaic devices as well as charged particle detector.

Controlled polymerization of functional acrylamides by rare-earth aryloxide-based Lewis pairs

A series of amine-bridged bis(phenolate) rare-earth (Sc, Y) aryloxides were synthesized and characterized. These complexes were successfully used for the controlled Lewis pair polymerization (LPP) of functional acrylamides in combination with phosphines, affording a new type of polyacrylamides with predictable molecular weight and low molecular weight distribution. The living nature of this LPP was verified by near-quantitative initiation efficiencies, a linear increase of molecular weight vs monomer-to-initiator ratio and monomer conversion, chain extensions, and the synthesis of well-defined block copolymers. The mechanistic studies were performed through the isolation of a zwitterionic intermediate as well as the end-chain analysis of oligomers, showcasing a rare-earth/phosphine cooperation. Furthermore, the resultant polyacrylamides exhibit outstanding thermal stability and great potential for application in photovoltaic devices.

Effect of nickel oxide concentration on titanium oxide bilayer photoanode for dye-sensitized solar cell application

The mesoporous titanium oxide has attracted significant attention as a photoanode material for Dye-Sensitized Solar Cells (DSSCs). In the present work, we coated a planar NiO layer on the TiO2 film to minimize charge recombination with the dye and/or electrolyte molecules. The structural, morphological, elemental, optical, and electrical properties of the TiO2 and bi-layered TiO2/NiO films were studied using various characterization techniques. DSSCs based on N3 dye-sensitized TiO2 and bi-layered TiO2/NiO films were fabricated using PI as the redox electrolyte. The photocurrent density–voltage (J–V) characteristics of the DSSCs were studied using a solar simulator. Various parameters, such as open-circuit voltage (Voc), short-circuit photocurrent density (Jsc), and fill factor (FF), were calculated from the J–V characteristics. DSSCs based on bi-layered TiO2/NiO films showed superior performance compared to bare TiO2 films. The J–V characteristics of bilayer film shows enhanced open-circuit voltage (Voc) ~ 0.56 V, short-circuit current density (Jsc) ~ 2.14 mA/cm2, fill factor (FF) ~ 75%, and efficiency (ƞ) ~ 0.91%. The TiO2/NiO solar cell showed a ~ 28% increase in efficiency compared to TiO2-based DSSC. Hence, the bi-layered TiO2/NiO films have potential applications in optoelectronic and photovoltaic devices.

Synthesis and Tuning of Electronic, Optical, and Photoelectrochemical Properties of Copper Metavanadate Alloys via Alkaline Earth Metal Substitution

Unlike the well-studied and technologically advanced Group III-V and Group II-VI compound semiconductor alloys, alloys of ternary metal oxide semiconductors have only recently begun to receive widespread attention. Here, we describe the effect of alkaline earth metal substitution on the optical, electronic, and photoelectrochemical (PEC) properties of copper metavanadate (CuV2O6). As a host, the Cu-V-O compound family presents a versatile framework to develop such composition-property correlations. Alloy compositions of A0.1Cu0.9V2O6 (A = Mg, Ca) photoanodes were synthesized via a time and energy-efficient solution combustion synthesis (SCS) method. The effect of introducing alkaline earth metals (Mg, Ca) on the crystal structure, microstructure, electronic, and optical properties of copper metavanadates was investigated by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), transmission electron microscopy (TEM), and Raman spectroscopy. The PXRD, TEM, and Raman spectroscopy data demonstrated the polycrystalline powder samples to be mutually soluble, solid solutions of copper and alkaline earth metal metavanadates and not simple mixtures of these compounds. The DRS data showed a systematic decrease in the optical bandgap with Cu incorporation. These trends were corroborated by electronic band structure calculations. Finally, the PEC properties exhibited a strong dependence on the alloy composition, pointing to possible applicability in solar water splitting, heterogeneous photocatalysis, phosphor lighting/displays, and photovoltaic devices.

Investigating the physical characteristics of inorganic cubic perovskite CsZnX3 (X = F, Cl, Br, and I): An extensive ab initio study towards potential applications in photovoltaic perovskite devices

CsZnX3 (X = F, Cl, Br, I) cubic perovskite compounds were investigated using Wien2K with PBE and mBJ energy exchange potentials to determine their structural, electronic, optical, thermoelectric, and thermodynamic properties. The results of Phonon vibrational frequency, formation energy, and cohesive energy show thatall compounds arestable. The electronic properties revealed that CsZnF3 has the highest indirect bandgap as an insulator, followed by CsZnCl3 and CsZnBr3, and CsZnI3 has the lowest indirect bandgap. CsZnX3 (X = Cl, Br, I) are classified as p-type semiconductors based on their electronic structure and the positive values of the Seebeck coefficient. High transparency was shown by low visible and infrared absorption. The investigated compounds exhibit high power factor and high figure of merit (ZT), which exceeds 0.7 over the temperature range 300–800 K. As the material’s temperature rises, its lattice heat conductivity decreases in accordance with thermodynamics. However, when the temperature exceeds the Debye temperature, the volume heat capacity matches the Dulong-Petit limits and the experimental results.