Applications In Multifunctional Devices Research Articles

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors.

Optoelectronic reconfigurable logic gates are promising candidates to meet the multifunctional and energy-efficient requirements of integrated circuits. However, complex device architectures need more power and hinder multifunctional device applications. Here, we design vertical field-effect transistors (VFET) based on the two-dimensional (2D) graphene/MoS2/WSe2/graphene van der Waals heterojunction forming ohmic and Schottky contact. The modulation of the Schottky barrier via gate bias enables the device to switch between positive and negative photocurrents, which can effectively achieve optoelectronic reconfigurable logic gates (XNOR, NOR, NAND, AND, OR, and Inhibit) in a single device. Particularly, the transistor number is reduced by 75% for ("XNOR", "NOR", "NAND") and 83% for ("AND", "OR") gates compared to traditional logic circuits. This work provides a promising route for using a single device to realize optoelectronic reconfigurable logic gates, which can advance the development of high-speed, high-throughput, and intricate data processing in future optical computing applications.

A new homologous series of semi-conducting liquid crystals based on phenyl-anthracene: synthesis and effect of the alkyloxy terminal chain on charge transport and photoconductive properties.

π-Conjugated systems are the key to the charge transport properties of organic semiconductors. Four multifunctional mesogenic materials were designed and synthesised from 2-amino anthracene and para-hydroxybenzaldehyde. Each material contains a central, rigid phenyl-anthracene core and one flexible alkyloxy chain with different lengths based on the concept of combining liquid crystal (LC) materials featuring facile processability, highly ordered alignment, and effective charge transport. (E)-N-(Anthracen-2-yl)-1-(4-(alkyloxy)phenyl) methanimine (n-OPIA) with n = 8, 10, 12, and 16 was chemically characterized by nuclear magnetic resonance spectroscopy and high-resolution mass spectrometry. Their thermal behaviours were performed by means of differential scanning calorimetry and polarised optical microscopy and showed differences in mesomorphic behaviours with respect to the alkyloxy chain length. Concerning their frontier molecular energy levels, they were studied by optical spectroscopy and cyclic voltammetry and compared to values obtained via ab initio density-functional theory (DFT) calculations. LC field-effect transistors (LC-FETs) using a solvent vapour enhanced drop casting based n-OPIA material showed efficient electrical parameters and interesting photoconductive properties, indicating their potential applications in multifunctional integrated devices. As the alkyloxy chain length of the n-OPIA compounds increased, the hole mobility, on/off current ratio, and responsivity decreased. The 8-OPIA homologue exhibits a mobility one order of magnitude larger than the previously studied homologue, namely 10-OPIA.

Modulation of solid solution in MgxMn1−xAl2xFe2(1−x)O4 spinel ceramics for multifunctional devices

AbstractSolid solution modulation is an ideal method for combining the advantages of different parent compounds while mitigating their disadvantages. Here, we investigated the thermal sensitivity, magnetic properties, and microwave absorption of MgxMn1−xAl2xFe2(1−x)O4 (0.2 ≤ x ≤ 0.8) spinel solid solution ceramics for application in multifunctional devices. The electrical transport and magnetic properties can be modulated by adjusting the solution ratio. The ceramics exhibit negative temperature coefficient characteristic. The B‐values from 5065–8056 K, suggesting accurate temperature measurements over a wide temperature range. As a type of soft magnetic material, it has a narrow hysteresis loop and high resistivity. Vector network analyzer studies indicate Mg0.2Mn0.8Al0.4Fe1.6O4 could be a candidate for microwave absorption in S‐band. This study successfully extends the applicability of MgxMn1−xAl2xFe2(1−x)O4 ceramics for high‐temperature thermistors and also confirms potential for multifunctional device.

The transport properties and new device design: A case of doped armchair blue phosphorene nanoribbons

We design two p-n nanojunctions based on S- and Si- atoms doped armchair blue phosphorene nanoribbons (aBPNRs) including two semi-infinite electrodes and a scattering region and investigate their electronic and transport properties. Our calculations are based on density functional theory incorporated non-equilibrium Green's function approach. In impure aBPNRs, S/Si atoms substituted doping could greatly enhance the conductivity, and the S/Si doped aBPNRs show metallic properties. Based on the doped aBPNRs, devies D1 and D2 are constructed where the scattering region of D1 is formed by direct expansion of two electrodes, while the scattering region of D2 includes two undoped unit cells as buffer. The transport calculations show that both of D1 and D2 show excellent negative differential resistance (NDR) effect at low bias and significant rectification effects at high bias. Moreover, whether there is buffer in the scattering region has a great influence on the magnitude of current of the devices. Although the current of the device D1 without buffer is generally higher than that of the device D2, the NDR and rectification effects of D2 are better than D1 in terms of peak-to-valley ratio and rectification rate. These transport behaviors can be explained by the evolution of the transmission spectra, frontier molecular orbital and the symmetry matching between the band structures of the electrodes. This indicates that aBPNRs are a promising candidate for the future application of multi-functional electronic devices.

Investigation of magnetic and electric properties of bismuth ferrite nanoparticles at different temperatures

Multiferroic bismuth ferrite shows a massive interest in its potential application in magnetic and electronic devices however maintaining high purity in bismuth ferrite nanoparticles at different temperatures is a difficult task for researchers. Several samples are prepared with different annealing temperatures and investigated in different atmospheres to recognize magnetic and electrical properties. A xerogel powder of bismuth ferrite is synthesized by the sol-gel route. The powder then anneals at 500, 600, 700, and 800 °C to form a nanostructure. X-ray diffraction analysis confirms that the annealed samples are in rhombohedral structure with R3c space symmetry and show a significant increase in crystal size and reduction in lattice strain with increasing annealing temperature. FESEM reveals the microstructural features of annealed nanoparticles which represent the conversion of spherical to cubic morphology with annealing temperature. Vibrating sample magnetometer investigations were conducted as a function of annealing and surface (300, 200, 80 K) temperatures. Insignificant variations of saturation magnetization are detected with surface temperature, but considerable degradation is observed with increasing annealing temperatures. The band-gap energy of bismuth ferrite nanoparticles annealed at 500, 600, 700, and 800 ºC is measured and significant escalation is observed from 1.93 to 2.06 eV. Electrical property analyses have been investigated as a function of frequency at different surface temperatures of 50, 100, 150, 200, 250, 300, and 350 °C. Remarkable variations are established in the electric and magnetic properties. Bismuth ferrite has been widely investigated due to its promising multifunctional device applications such as memory devices, spintronics, sensors, actuators, and photocatalytic and photovoltaic applications.

Enhanced multiferroic properties of Co-doped BiFeO3 nanoparticles via structural changes

The present study demonstrates a rhombohedral-to-orthorhombic phase transition of BiFe1-XCoXO3 (BFCXO, x = 0, 0.01, 0.03, and 0.05) nanoparticles induced by Co ion doping. With increasing concentration of Co dopant, XRD, Raman and IR patterns exhibit lattice shrinkage and increased lattice strain; SEM and TEM images reveal a corresponding reduction in grain size; XPS spectra indicate that the Fe2+ ions are readily oxidized by Co3+ to Fe3+ ions because to the greater oxidation–reduction potential of Fe3+/Fe2+ (1.3 eV) than that of Co3+/Co2+ (0.55 eV). Effective regulation of crystal structure and microstructure significantly alters the multiferroic properties of BFCXO samples. The Co-doped samples gradually transition from antiferromagnetism to ferromagnetism. Among them, BFC0.03O reaches its maximum values at Ms ~ 0.956 emu/g for magnetization saturation and Mr ~ 0.054 emu/g for remanent magnetization. Meanwhile, BFC0.03O exhibits better ferroelectric properties compared to its pure counterpart. This study presents an effective approach for controlling the structure and characteristics of BFO-based nanomaterials for multifunctional device applications.

High performance ambipolar response photodetectors based on ReS2/PdSe2 van der Waals heterostructures

Anomalous negative photoresponse in a photodetector where the current is reduced under light illumination holds great potential in the application of next-generation novel and multifunctional optoelectronic devices. Until now, the figure of merits for negative photodetectors, such as responsivity and response speed, still exhibit unsatisfactory performance when compared to their positive counterparts. In this work, an unique gate voltage-dependent ambipolar-response photodetector based on the ReS2/PdSe2 heterostructure with excellent characteristics are prepared and investigated systematically. The evolution for concentration of hole in PdSe2 by gate voltage and the trap states existed at the surface and interface play a dominant role in the transition of negative to positive response. The negative photoresponse performances in terms of responsivity, external quantum efficiency (EQE), and response speed under 638 nm light illumination, are as high as about 532 A/W, 105%, and as fast as 7.9/8.7 µs, respectively. Meanwhile, the corresponding values of the positive response also reach to ∼10.5 A/W, ∼2069 %, and ∼30 µs, respectively, demonstrating the superiority of this heterostructure at ambipolar response. In addition, a similar phenomenon is also observed at the near-infrared region (980 nm). The discovery of these results signifies a pronounced breakthrough in the field of ambipolar photodetectors, thereby paving the way for future advancements in optoelectronic applications.

Effect of cation site occupancy on the structure and magnetic properties of SrCoxTixFe12–2xO19 thin films

Multiferroic materials have potential applications in multifunctional electronic devices, and M-type hexaferrite with conical spin order is a promising candidate. In this paper, a series of SrCoxTixFe12–2xO19 thin films were prepared by a sol-gel method, and x-dependent structure, cation site occupancy and magnetic properties were investigated to explore the origin of conical spin order in M-type hexaferrite. It was found that the introduction of Co2+ and Ti4+ ions decreases the uniaxial magnetocrystalline anisotropy and breaks the threefold symmetry of the lattice, inducing a conical magnetic structure. Moreover, the appearance temperature of the conical spin order (Tcone) increases first and then decreases with the increase of x, and the largest Tcone of about 324 K is obtained in SrCo1.8Ti1.8Fe8.4O19 thin film. The evolution of magnetization is closely related to the site occupancy of Co2+ and Ti4+ ions, and the net effective substitution ratio of spin-down Fe3+ is positive correlation to the Tcone of SrCoxTixFe12–2xO19 and thus considered to be responsible for the introduction of conical spin order. The results reveal the correlation between the structure, magnetic properties and cation site occupancy, pointing out an effective method to induce conical spin order in M-type hexaferrites.

In Situ Synthesis of CsPbX3/Polyacrylonitrile Nanofibers with Water-Stability and Color-Tunability for Anti-Counterfeiting and LEDs.

Inorganic CsPbX3 (X = Cl, Br, I) perovskite quantum dots (PQDs) have attracted widespread attention due to their excellent optical properties and extensive application prospects. However, their inherent structural instability significantly hinders their practical application despite their outstanding optical performance. To enhance stability, an in situ electrospinning strategy was used to synthesize CsPbX3/polyacrylonitrile composite nanofibers. By optimizing process parameters (e.g., halide ratio, electrospinning voltage, and heat treatment temperature), all-inorganic CsPbX3 PQDs have been successfully grown in a polyacrylonitrile (PAN) matrix. During the electrospinning process, the rapid solidification of electrospun fibers not only effectively constrained the formation of large-sized PQDs but also provided effective physical protection for PQDs, resulting in the improvement in the water stability of PQDs by minimizing external environmental interference. Even after storage in water for over 100 days, the PQDs maintained approximately 93.5% of their photoluminescence intensity. Through the adjustment of halogen elements, the as-obtained composite nanofibers exhibited color-tunable luminescence in the visible light region, and based on this, a series of multicolor anti-counterfeiting patterns were fabricated. Additionally, benefiting from the excellent water stability and optical performance, the CsPbBr3/PAN composite film was combined with red-emitting K2SiF6:Mn4+ (KSF) on a blue LED (460 nm), producing a stable and efficient WLED device with a color temperature of around 6000 K and CIE coordinates of (0.318, 0.322). These results provide a general approach to synthesizing PQDs/polymer nanocomposites with excellent water stability and multicolor emission, thereby promoting their practical applications in multifunctional optoelectronic devices and advanced anti-counterfeiting.

Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection.

Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.

Barrier-free subwavelength multi-channel topological acoustic interlayer under direct resonance induction

In this paper, a new topological acoustic interlayer is proposed, which is formed by combining multi-order resonators in the form of the triangular lattice in the normal direction of the acoustic interlayer. Through the strong resonance of the resonator, the distribution of modes in the acoustic interlayer is directly induced to form a combination of modes with different topological states to support the subwavelength multi-channel lossless directional acoustic transmission in barrier-free space. Since there are no scatterers, not only can the required frequency band be directly achieved through the resonance frequency of the resonator alone, but also the background medium space in which the acoustic wave transmitting is a uniform medium, so the transmission is secret and the structure is ventilated. More importantly, there is more space in the normal direction of the barrier-free interlayer for design sub-wavelength multi-channel transmission. Furthermore, the random obstacles in interlayer do not affect the transmission under the pseudo spin modes. Finally, experimental verification is carried out. This research paves the way for the engineering application of multi-band acoustic antennas, covert communication, ventilated devices and other multi-functional devices, and will bring new enlightenment to the fields of elastic wave, light wave and electromagnetic wave.

Study on the magnetoelectric effect, ferroelectric and optical investigation of (1−x) BCT + x NZLFO multiferroic composite

AbstractThis study investigates the magnetoelectric coupling effect in dual‐phase multiferroic composites prepared using a solid‐state reaction method. The composites were fabricated with the formula (1−x)Ba₀.₇₇Ca₀.₂₃TiO₃(BCT) + xNi₀.₆Zn₀.₂₅La₀.₁₅Fe₂O₄(NZLFO), where x varied from 0% to 100% in 10% increments. Ca‐doped BaTiO₃ served as the ferroelectric phase, while La‐doped Ni–Zn ferrite acted as the ferromagnetic phase. The effects of varying ferrite content (x) on structural, optical, ferroelectric, electrical, and magnetoelectric properties were comprehensively analyzed. X‐ray diffraction (XRD) with Rietveld refinement revealed a spinel cubic structure for the ferrite phases and a tetragonal structure for the perovskite phases. The study observed a moderate influence of ferrite concentration on the lattice parameters of BCT and an opposing effect on the lattice parameters of NZLFO. Optical measurements indicated higher light absorption in the visible range compared to the UV region and wide optical bandgap. Magnetic properties, characterized by saturation magnetization, exhibited a dependence on temperature, with a Curie temperature (Tc) of 700 K. Electrical resistivity displayed a maximum at x = 50% and remained constant at high frequencies. The study also confirmed the presence of electric polarization induced by a magnetic field, with the highest magnetoelectric coefficient observed at x = 10%. These findings demonstrate the successful fabrication of dual‐phase multiferroic composites with tunable properties through controlled ferrite content. The observed magnetoelectric coupling suggests potential applications in multifunctional devices.

Flexible and Stretchable Thermoresponsive Display for Multifunctional Device Applications

Metal–organic frameworks (MOFs) have been recognized vastly as stimuli‐responsive materials owing to their extreme sensitivity toward the stimuli that make them flawless nominees for multifunctional device applications. However, MOFs are often oversensitive toward moisture, which significantly affects their stable responses and reproducibility. Herein, a MOF–polymer display (i.e., copper‐based MOF with polydimethylsiloxane) is developed that exhibits high sensitivity toward temperature changes without getting affected by moisture. In response to the thermal gradient, the display exhibits the change in color from sky blue to dark blue when the temperature varies from 30 to 100 ºC, which is attributed to the second‐order phase transition within the time interval 40 s and reversible in 60 s. To provide insights on the mechanism, ex situ UV–vis and temperature‐dependent operando X‐day diffraction are conducted, which unveils that the color change in the display is associated with reversible contraction/expansion of the unit cell parameters. In addition to that, the thermoresponse of the display remains unaffected under mechanical deformations, which indicates that the color display is mechanically and thermally stable. The as‐developed color display is mechanically robust and highly sensitive toward temperature change; it can be utilized as the color indicator in signaling temperature rise in smart mobiles or laptops during discharging to keep the user safe or applications in augmented intelligence.

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

In the realm of optoelectronic integration, silicon-based Ge bonding has attracted great attention due to its advantages in short-wave infrared response and low cost. However, owing to the inherent lattice mismatch and thermal mismatch between Ge and Si, the bonded Ge-Si heterogenous interfaces encountered problems of thermal instability and high interface states. Herein, an approach of separating the bonding interface from the heterogenous interface is proposed through inserting a Ge epitaxial layer (GeEL) between the Si substrate and Ge film. This separation modifies the bonding interface to a homogenous one, alleviating the massive mismatch stress and achieving film relaxation, enhancing bonding stability in all aspects. Moreover, during 850 °C annealing, GeEL is doped via diffusion hence realizes electric filed modulation, inhibiting the carrier recombination leakage current and trap assisted tunneling in this defect-rich layer. A Ge-Si heterogenous PIN diode prepared by this bonding method has achieved a remarkable low dark current density (1.33 mA/cm2), a low ideality factor (1.11), and a high on–off ratio (106), confirming the outstanding quality of the bonded heterojunction. This work provides great prospects for higher performance, larger scale and multi-functional Si-based heterogenous material device applications.

Manipulation of Charge Transport in MoS2/MoTe2 Field Effect Transistors and Heterostructure by Propagating the Surface Acoustic Wave.

Two-dimensional (2D) materials with atomic-scale thickness are promising candidates to develop next-generation electronic and optoelectronic devices with multiple functions due to their widely tunable physical properties by various stimuli. The surface acoustic wave (SAW) produced at the surface of the piezoelectrical substrate can generate electrical and strain fields simultaneously with micro/nanometer resolution during propagation. It provides a stable and wireless platform to manipulate the rich and fascinating properties of 2D materials. However, the interaction mechanisms between the SAW and 2D materials remain unclear, preventing further development and potential applications of SAW-integrated 2D devices. This work studied the acoustoelectric (AE) charge transport mechanism in 2D materials thoroughly by characterizing the performances of the n-type MoS2 and p-type MoTe2 field effect transistors (FETs) and the MoS2/MoTe2 p-n junction driven by the SAW. As compared to the case driven by the static electrical field alone, the SAW drove the electron and hole transport along the same direction as its propagation, and the generated AE current always had the opposite direction to the AE voltage. In the device level, the 2D FETs showed a significantly reduced subthreshold swing up to around 67% when the SAW was used to drive the channel carriers, indicating that the SAW enhanced the on/off switching speed. Moreover, the MoTe2/MoS2 p-n junction showed a tunable photoresponsivity by the power and propagation direction of the SAW. These findings provide a solid foundation to promote future research and potential applications of SAW-driven multifunctional devices based on 2D materials.

Tunable band alignment and optical properties in van der Waals heterostructures based on two-dimensional materials Janus-MoSSe and C3N4

Van der Waals heterostructures with tunable band alignments are the promising candidates for the fabrication of high-performance multifunctional nano-optoelectronic devices. In this work, we investigate the band alignments and optical properties of two-dimensional MoSSe/C3N4 and C3N4/MoSSe heterostructures using first-principles methods. The two most stable MoSSe/C3N4 (C3N4-Se) and C3N4/MoSSe (C3N4-S) heterostructures (labeled as A2 and B2, respectively) out of the twelve possible heterostructures are selected for the corresponding properties research. It is found that the A2 exhibits type-I band alignment, making it suitable for light-emitting applications, while the B2 exhibits typical type-II band alignment, which is favorable for carrier separation. Moreover, the band alignment of the two heterostructures can be modulated by the external electric fields, that is, band alignment transition between type-I and type-II. In addition, the main absorption peaks of both heterostructures in their pristine state are located in the visible light region (approximately 2.9 eV), and the peak values of the absorption peaks can be enhanced (weaken) via applying positive (negative) external electric fields. Our findings demonstrate that the C3N4/C3N4 and C3N4/MoSSe heterostructures hold significant potential for applications in multifunctional electronic devices including light-emitting, carrier separation, optical modulators, etc.

First-Principles Study on Evolution of Magnetic Domain in Two-Dimensional BaTiO3 Ultrathin Film Doped with Co under Electric Field.

The magnetization mechanism of Co-doped BaTiO3 ultrathin films is a subject of debate, which results in difficulties with the design of new multiferroics based on BaTiO3 matrixes. With the aid of a first-principles approach, it was observed that when the interstitial site and Ti vacancy were filled with Co, the configuration behaved in a nonmagnetic manner, indicating the significance of the Co content. Moreover, in the case of Co substituting two neighboring Ti atoms, when a direct current field was applied in the [100] direction, the magnetic domains excluding those in the [100], [010], and [001] directions were directed away. Further, the magnetoelectric constant was evaluated at ~449.3 mV/cmOe, showing strong magnetoelectric coupling at room temperature. Clearly, our study indicates that strict control of Ba, Ti, O, and Co stoichiometry can induce an electric and magnetic field conversion in two-dimensional BaTiO3 and may provide a new candidate for single-phase multiferroics for application in next-generation multifunctional devices.

Structure-Guided Approaches for Enhanced Spin-Splitting in Chiral Perovskite.

Hybrid organic-inorganic perovskites with diverse lattice structures and chemical composition provide an ideal material platform for novel functionalization, including chirality transfer. Chiral perovskites combine organic and inorganic sublattices, therefore encoding the structural asymmetry into the electronic structures and giving rise to the spin-splitting effect. From a structural chemistry perspective, the magnitude of the spin-splitting effect crucially depends on the noncovalent and electrostatic interaction within the chiral perovskite, which induces the local site and long-range bulk inversion symmetry breaking. In this regard, we systematically retrospect the structure-property relationships in chiral perovskite. Insight into the rational design of chiral perovskites based on molecular configuration, dimensionality, and chemical composition along with their effects on spin-splitting manifestation is presented. Lastly, challenges in purposeful material design and further integration into chiral perovskite-based spintronic devices are outlined. With an understanding of fundamental chemistry and physics, we believe that this Perspective will propel the application of multifunctional spintronic devices.

Metal oxide-mixed polymer-based hybrid electrochromic supercapacitor: improved efficiency and dual band switching

The inclusion of charge storage properties in electrochromic devices (ECDs) has gained much interest and has evolved into a promising emerging energy-related field due to multifunctional smart device applications. Here, an organic–inorganic solid-state asymmetric electrochromic supercapacitor device (ESCD) containing nano-CoTiO3-mixed poly-3-hexylthiophene and WO3 as two electrodes has been designed to study electrochromic and supercapacitor properties. The electrochemical properties of CoTiO3 show a pseudocapacitive-type charge storage capability, which has been utilized to enhance the electrochromic performance of the ESCD with additional charge storage ability. The device shows charge storage properties with fast charging and slow discharging, giving very high coulombic efficiency with a specific capacitance of 6.4 mF cm−2 at 0.2 mA cm−2 current density. The device shows excellent electrochromic supercapacitive properties with a color contrast of ∼50% and a short switching time of ∼1 s at a 515 nm wavelength with excellent cyclic stability. The device exhibits the capability to cut near infrared wavelength (700 nm and 850 nm) and has a potential application as a heat filtering device. Thus, the addition of pseudocapacitive-type materials in ECDs enhances the capacitive performance along with electrochromic properties, which makes ECDs more suitable for real life applications.

Robust type-III C3N/Ga2O3 van der Waals heterostructures

By combining two-dimensional (2D) materials with different band alignments at the contact interface, van der Waals heterostructures (vdWHs) can achieve multifunctional device applications. Here, through first principles methods, we constructed two C3N/Ga2O3 vdWHs named P↑ and P↓ because of the intrinsic polarization of Ga2O3 to study electronic, interfacial and optical characteristics. We find that the P↑ and P↓ both display a unique kind of band alignment known as broken-gap or type-III. This feature makes them highly suitable for tunnel field effect transistors (TFETs) applications. To the best of our knowledge, the tunnel window of the P↓ is the largest among the theoretical studies, reaching 0.993 eV. The electronic structure and band edge alignment of the C3N/Ga2O3 vdWHs show a weak dependence on strain engineering or external electric field. Normal-to-plane compressive strains effectively enhance the tunneling probability. We can acquire essential insights into this novel material system and its promise for future TFETs by analyzing the electrical characteristics of the C3N/Ga2O3 vdWHs.