High-frequency Device Applications Research Articles

La3+ ion doped Cd0.5C0.5LaxFe2-xO4 nanomagnetic materials for high-frequency device applications

The sol-gel self-combustion technique was applied to form Cd–Co-based La-doped (Cd0.5Co0.5LaxFe2-xO4) spinel ferrite nanoparticles. A series of six samples was synthesized by varying lanthanum content from x = 0.00 to 0.20. The structural characteristics of the prepared nanoparticles were carried out using X-ray diffraction (XRD) analysis. The (311) plane verified that the prepared nanomaterials are in the spinel phase in all observed XRD patterns. The crystallite size for each sample was determined using the Scherrer formula found in the 8.7–17.8 nm range, which is well correlated with the SSP model. The crystallite size decreased while the lattice constant increased from 8.38 to 8.45 Å with increasing La-content. The increasing trend in the bulk density and X-ray density has been analyzed with the effects of La3+ contents. In Fourier-transform infrared spectroscopy (FTIR), the high-frequency absorption band (υ1) was found from 522.15 to 541.06 cm−1, whereas the low-frequency band (υ2) varied from 419.80 to 414.31 cm−1. The surface morphology was carried out by scanning electron microscope (SEM), which positively correlated with XRD analysis. Impedance analyzer (IA) assisted in observing the variations in complex dielectric properties of the compound in the frequency range from 1 MHz to 3 GHz. The dielectric constant and impedance plots depicted that the nano ferrites have good dielectric properties in low-frequency regions due contribution of polarization. While conduction can be made possible in the high-frequency areas as observed through AC conductivity. The electric modulus revealed the relaxation phenomenon at high frequency due to the hopping of electrons at the octa and tetrahedral sites. The magnetic properties were investigated to study the impact of La3+ ion under the applied magnetic field from −15 to 15 kOe. The saturation magnetization, and magnetic remanence were found from 40.6 to 27.7 emu/g and 19.6 to 2.7 emu/g, respectively. The synthesized nanoparticles can be utilized for microwave applications and magnetic storage devices.

Structural, electrical, magnetic, and anti-cancer properties of Gd-doped Mg–Cd ferrites

In this study, we report structural, electrical, magnetic, and anti-cancer properties of pure and Gd3+ ion-substituted Mg–Cd ferrites produced via a sol-gel auto-combustion synthesis process. The prepared Gd-doped and undoped Mg–Cd-based ferrite's physical properties were characterized by X-ray diffraction spectroscopy (XRD) to find structural properties, Brunauer–Emmett–Teller (BET) for surface area analysis, field emission scanning electron microscopy (FE-SEM) was used to understand morphological status and X-ray photoelectron spectroscopy (XPS) used for elemental confirmation. XRD reveals that 900 °C sintering temperature for 5 h gives us the purest form of cubic spinel structure. Fourier transform infrared spectroscopy (FTIR) suggests no changes in bonds while increasing the dopant. The study of temperature-dependent dielectric constants showed a significant peak in the dielectric constant at around 109 between 300 °C and 400 °C. Subsequently, the trend shifted towards a decreasing order. Surprisingly, the dielectric loss has yielded meager numbers. Magnetic characteristics were measured using a vibrating sample magnetometer (VSM); magnetic saturation increased as dopant concentration rose. This material is beneficial in high-frequency device applications, low-loss antennas, and radomes due to its dielectric and magnetic characteristics. The anti-cancer study suggests that it is more efficient at inhibiting cancer cells than normal cells. Also, the anti-microbial and anti-cancer characteristics suggest it can be useful in biomedical applications.

Dielectric and magnetic response of Cu-Co-Sm ferrite impregnated with graphene nanoplatelets for high-frequency device applications

This work studied a composite of graphene nanoplatelets (GNPs) impregnated copper-cobalt-samarium ferrites Cu0.5Co0.5Fe1.97Sm0.03O4/GNPs synthesized via sol-gel auto-combustion route. The structural, electrical, dielectric, and optical properties of the as-prepared composites were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), EDX, I-V characteristics, impedance measurement, raman spectroscopy, scanning electron microscopy (SEM), vibrating sample magnetometry (VSM) analysis, and UV–visible spectroscopy. XRD confirmed that the spinel ferrites had a crystalline single-phase FCC structure with the lattice constant of around 8.33 Å, and the crystallite size range from 54.10 nm to 51.85 nm. SEM analysis confirmed the homogenous dispersion of spinel ferrites in graphene sheets, and EDX confirmed the presence of all elements in ferrite composites with GNPs. Furthermore, the spinel matrix was confirmed by the Raman and UV-visible analysis. A minimum particle size of 21.73 nm was determined using TEM, and the minimum value of activation energy (0.01 eV) was obtained from IV characteristics for ferrite composite with 2.5% GNPs. Further, our ferrite composites with GNPs demonstrated improved electroconductive properties, with conductivity ranging from 5.88×10−8S/cm to 1.04×10−6S/cm at 673 K. The real & imaginary part of permittivity, dielectric constant (ε’), and impedance (Z) were also improved with the addition of GNPs. At low frequencies, a permeability loss value of 0.81 was obtained for the ferrite composite with 5% GNPs. VSM analysis confirmed that the saturation magnetization decreased in ferrite composites with graphene nanoplatelets. The minimum value of skin depth of 1.03 mm was observed at 1.25 % GNPs. Our ferrite composites with GNPs exhibited minimal eddy current at high frequencies, making them promising candidates for high-frequency device applications.

Rare earth Gd3+ substituted on cobalt ferrites: Structural and dielectric studies by citrate gel autocombustion method

Gadolinium-doped cobalt ferrite (CoGdxFe2-xO4; X = 0–0.025 in a 0.005 interval) was synthesised using citrate gel autocombustion. The effect of Gd3+ ions on structural, dielectric, and magnetic characteristics has been investigated. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, ultraviolet visible spectroscopy (UV), an impedance (dielectric) analyzer, and a vibrating sample magnetometer (VSM) were used to characterise the as-synthesised materials. X-ray diffraction powder patterns were used to confirm phase identification and spinel structure, and the Williamson-Hall plot was used to investigate the crystalline size and lattice strain on the peak broadening of each sample, with crystalline size ranging from 13 to 48 nm. The scanning electron microscopy (SEM) micrographs demonstrate particle agglomeration, while energy dispersive spectroscopy (EDAX) pictures indicate the purity and existence of all elements in the created material samples. The frequency-dependent dielectric constant, dielectric loss, and AC electrical conductivity in the frequency range 50 Hz–1 MHz. The behaviour of dielectric properties has been studied using the Maxwell-Wagner model and Koop's theory. Because of this, higher frequencies show less dielectric loss, making them appropriate for use in high-frequency device applications.

Structural, morphological, XPS, dielectric and spectral properties of sol-gel synthesized Ba–Zn–Cr U-type nanocrystalline magnetic oxide materials

Polycrystalline Cr3+ substituted Ba4Zn2Fe36-xCrxO60 (Zn2U) U-type hexaferrite compositions Ba4Zn2Fe36-xCrxO60 (x = 0.0, 0.5, 1.0, 1.5, and 2.0) were fabricated using the sol-gel self-ignition technique. U-type hexaferrite structure was achieved by sintering the powdered samples for 6 h at 1200 °C in a muffle furnace. The phase identification and structural parameters of Zn2U hexaferrites were evaluated by X-ray diffraction peaks of the powdered samples. Lattice parameters (a,c) and unit cell volume decreased upon Cr3+ substitution. The crystallite size was measured between 61 and 57 nm. FTIR spectra revealed the existence of specific absorption (Fe–O) bands at wavenumbers 419 and 539 cm−1. These bands further verify the formation of U-type hexaferrite. SEM micrographs showed the platelet-like morphology of the grains with proper hexagonal structure. X-ray photoelectron spectroscopy (XPS) results confirmed the existence of all metal ions with their corresponding electronic states. The dielectric response of the fabricated Zn2U U-type hexaferrite pellets was investigated at room temperature through a vector network analyzer with a wide frequency band from 1 MHz to 6 GHz. Dielectric constant (εʹ) was increased for the compositions x = 1.0 and 1.5 while dielectric loss (εʺ), tangent loss (tanδ), and ac conductivity (Ϭac) were reduced upon Cr3+ substitution. Single semicircles in the impedance Cole-Cole plots revealed that grain boundaries play a vital role in the conduction process of prepared U-type hexaferrites. Microwave absorption (MW) was improved with Cr3+ substitution. The minimum reflection loss (RL) of −53dB (99.99% MW absorption) at frequency 1.3 GHz was obtained for composition x = 0.5. The dielectric analysis (low losses and high Q-values) of the prepared hexaferrites predicts their appropriate use in high-frequency device applications.

Fabrication and elucidation of electromagnetic characteristics in Cr–Zn co-substituted strontium hexaferrite for high-frequency device applications

Fabrication and elucidation of electromagnetic characteristics in Cr–Zn co-substituted strontium hexaferrite for high-frequency device applications

Terahertz Schottky Barrier Diodes Based on Aligned Carbon Nanotube Arrays

Carbon nanotubes (CNTs) with superior electrical characteristics are among the most promising candidate materials for constructing millimeter wave and terahertz wave electronic devices. However, the reported Schottky barrier diodes (SBDs) based on CNTs usually exhibited high series resistance and severe mismatch to lower impedance external circuits, which limits the devices for high frequency applications. In this work, CNT SBDs of lateral structure with a rectify current density of -0.78 mA/μm and a short circuit current responsivity of 6.8 A/W are demonstrated based on aligned carbon nanotube arrays (A-CNTs) with high-density and high-semiconducting purity on a quartz substrate. The A-CNT SBD with a width of 10 μm and an L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</sub> of 50 nm under zero bias exhibits an ultra-low intrinsic capacitance of 2.5 fF and an intrinsic cutoff frequency <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> of up to 840 GHz, which suggests that CNT-based SBDs are promising for millimeter wave and terahertz wave applications.

Transport signatures of Van Hove singularities in mesoscopic twisted bilayer graphene

Magic-angle twisted bilayer graphene exhibits quasi-flat low-energy bands with Van Hove singularities close to the Fermi level. These singularities play an important role in the exotic phenomena observed in this material, such as superconductivity and magnetism, by amplifying electronic correlation effects. In this work, we study the correspondence of four-terminal conductance and the Fermi surface topology as a function of the twist angle, pressure, and energy in mesoscopic, ballistic samples of small-angle twisted bilayer graphene. We establish a correspondence between features in the wide-junction conductance and the presence of van Hove singularities in the density of states. Moreover, we identify additional transport features, such as a large, pressure-tunable minimal conductance, conductance peaks coinciding with non-singular band crossings, and unusually large conductance oscillations as a function of the system size. Our results suggest that twisted bilayer graphene close the magic angle is a unique system featuring simultaneously large conductance due to the quasi-flat bands, strong quantum nonlinearity due to the Van Hove singularities and high sensitivity to external parameters, which could be utilized in high-frequency device applications and sensitive detectors.

Sm-doped enhanced magnetic-dielectric properties of low-temperature fired Co2Z ferrite materials for high-frequency device applications

Co2Z ferrite with superior performance is a beneficial material for high filter devices and antenna substrates. In this work, Ba3Co2Fe24-xSmxO41 (x = 0.00–0.50 with a step of 0.10) materials were prepared using low temperature-fired process with 2.5 wt% of Bi2O3. The phase formation, microstructure, magnetic property, complex permittivity, and complex permeability were studied using X-ray diffraction, scanning electron microscopy, vibrating sample magnetometer, and vector network analyzer. The materials remained in a single hexagonal phase, and the grain size increased with increase of Sm-doped content. Saturation magnetization of samples increased at first and then decreased. When x = 0.20 and 0.30, the value of 4πMS was 2910.4 G and 2861.7 G, respectively. The variation of saturation magnetization is mainly due to the occupancy of Sm3+ ions. When Sm3+ ion doped Fe3+ ion of Co2Z ferrite, Sm3+ ion first preferred to occupy 4eIV site due to its low electronegativity, and then occupied 12k and 4f sites at high doped content, affecting magnetic moment and magneto-crystalline anisotropy. Furthermore, low-temperature sintering improves magnetic-dielectric properties of Sm-doped materials in high-frequency range. The real part of magnetic permeability (μ′) reached a maximum value of 8.4 when x = 0.20 and the real part of dielectric permittivity (ε′) reached a maximum value of 14.1 when x = 0.30. The magnetic loss and dielectric loss remained low (tanδμ = 0.05–0.08 and tanδε = 0.005–0.04) and the off-cut frequency was nearly 1 GHz. The results indicated that these magnetic-dielectric materials have great potential for high-frequency antenna applications.

Improved magnetic and electrical properties of Zn substituted nanocrystalline MgFe2O4 ferrite

The structural, magnetic, and electrical properties of Mg1−xZnxFe2O4 (0.0 ≤ x ≤ 0.8) nanoferrites synthesized using a solvent-free combustion route have been investigated. The X-ray diffraction study (XRD) reveals the single-phase nature of ferrites and the size of the crystallites is increased from 10.4 nm to 16.5 nm. Raman spectra show that the position of the vibrational modes varies with Zn. Transmission electron microscope (TEM) analysis shows that the particle size increases from 9.92 nm to 12.59 nm. An enhancement in magnetization is observed up to x = 0.4 at 300 K which decreases thereafter. Further, the samples exhibiting superparamagnetism and the blocking temperature decrease from 138.96 K to 65.27 K. The conductivity at 303 K decreases up to x = 0.6 whereas the activation energy enhances from 0.45 eV to 0.60 eV. The highest value of resistance is obtained for Mg0.4Zn0.6Fe2O4 sample. The results suggest that the prepared samples are promising candidates for biomedical and high-frequency device applications, respectively.

Strain-Mediated Magneto-Electric Effects in Coaxial Nanofibers of Y/W-Type Hexagonal Ferrites and Ferroelectrics

Nanofibers of Y- or W-type hexagonal ferrites and core–shell fibers of hexagonal ferrites and ferroelectric lead zirconate titanate (PZT) or barium titanate (BTO) were synthesized by electrospinning. The fibers were found to be free of impurity phases, and the core–shell structure was confirmed by electron and scanning probe microscopy. The values of magnetization of pure hexagonal ferrite fibers compared well with bulk ferrite values. The coaxial fibers showed good ferroelectric polarization, with a maximum value of 0.85 μC/cm2 and 2.44 μC/cm2 for fibers with BTO core–Co2W shell and PZT core–Ni2Y shell structures, respectively. The magnetization, however, was much smaller than that for bulk hexaferrites. Magneto-electric (ME) coupling strength was characterized by measuring the ME voltage coefficient (MEVC) for magnetic field-assembled films of coaxial fibers. Among the fibers with Y-type, films with Zn2Y showed a higher MEVC than films with Ni2Y, and fibers with Co2W had a higher MEVC than that of those with Zn2W. The highest MEVC of 20.3 mV/cm Oe was measured for Co2W–PZT fibers. A very large ME response was measured in all of the films, even in the absence of an external magnetic bias field. The fibers studied here have the potential for use in magnetic sensors and high-frequency device applications.

A reactive molecular dynamics study of the hydrogenation of diamond surfaces

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which could be unreachable experimentally. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113), and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation on these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity on the diamond surfaces, a key requirement for high-field, high-frequency device applications.

Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications

High Electron Mobility Transistor (HEMT) is presently a very important part in the electronics industries for high frequency applications and for low power applications. In this approach, single gate enhancement mode composite channels of In0.7Ga0.3As/InAs/In0.7Ga0.3As HEMT devices are simulated and analyzed for low power operations which leads to strong DC and RF performance. This can be achieved by working on the composite channel which was lattice matched, gate which was recessed and length of the gate which was optimized. In this paper, for various lengths of the gate with constant barrier thickness, the performance of the device is analyzed symmetrically with the specialized device dimensions with thickness of the barrier (TB) = 2nm, thickness of the channel (TCH) = 15nm. The length of the gate can be reduced which supports in decreasing the drain resistance, effects of capacitance and improved average electron velocity in the gate. And this in turn results in the best performance of the device metrics with the values, trans-conductance (gm) as 1741 μS/μm, drain current (Id) as 0.553574 mA/μm, cut-off frequency (fT) as 431 GHz, maximum frequency of oscillations (fmax) as 557 GHz.

Effect of Fe doping on the structural, morphological, optical, magnetic and dielectric properties of BaSnO3

Doping at the possible A or B site in the ABO3 perovskite can alter the structural, morphological and optical properties of the compounds. Perovskite alkaline earth stannate BaSnO3 doped with Fe resulted in BaSn1-xFexO3 compounds having different concentrations (x = 0.00, 0.01, 0.02, 0.03, 0.05 and 0.07) were prepared by solid-state method. The Rietveld analyzes were performed to determine the phase purity and the changes in structural parameters. Morphological analysis identifies the formation of hexagonal nanorods with doping. The non-linear optical property of the prepared samples shows optical power limiting behavior. Magnetic property signifies the existence of ferromagnetic order and EPR studies reveal the possible ferromagnetic ordering of Fe-doped samples. Dielectric loss decreases with Fe doping and has a gradual decrease in the higher frequency regime and has applications in high frequency devices.

Study of the structural phase transition in diamond (100) & (111) surfaces

Diamond is an insulating material in the bulk form, but exhibits conducting characteristics when its surface is functionalized. Understanding the electronic and physical properties of diamond surfaces is important for their successful implementation in high-power, high-frequency device applications. Density-functional theory (DFT) coupled with the AutoNEB method is used here to investigate the effect of reconstruction mechanisms on the electronic and structural properties of C(111) and C(100) surfaces. C(100) exhibits an exothermic reaction during reconstruction with no observable intermediates or transition states. The observed energy difference between the bulk-like and reconstructed phases is −0.16 eV/atom. For C(111), a new intermediate state is predicted between the bulk-like and fully reconstructed Pandey chain surfaces, with a per atom energy difference of −0.01 eV from the bulk-like 2×1 surface. Furthermore, an analysis into the electronic properties of both reconstructed phases reveals an electronic phase transformation. For the C(100) phase, we observed a metallic-to-semiconductor electronic phase transition. In contrast, the C(111) phase exhibited a metallic to semi-metallic electronic phase transformation. Our findings establish a fundamental understanding of the phase transition mechanisms in these surfaces and highlight a need for a tailored and sophisticated surface dependent preparation and fabrication approach during device design.

Impact of holmium on structural, dielectric and magnetic properties of Cu–Zn spinel ferrites synthesized via sol–gel route

The mixed nano-ferrites materials Cu0.6Zn0.4HoxFe2−xO4 (0.00 ≤ x ≤ 0.12) were prepared via the sol–gel auto combustion technique. The TGA curve established the annealing temperature (500 °C) for phase formation. The single exothermic peak on the DSC plot occurred at 341 °C temperature. XRD patterns of these nano ferrites verified single phase formation of the FCC cubic structure. The lattice constant a was increased from 8.4244 to 8.4419 A and then its value decreased to 8.4319 A. Crystallite size was found in the range of 7 to 16 nm. The surface morphology of the samples was observed from the scanning electron microscope (SEM) images. The grain size was found within the range of 90 nm to 106 nm. Energy-dispersive X-ray (EDX) results showed the significant substitution of Ho in Cu–Zn spinel ferrites. Dielectric parameters such as dielectric constant, dielectric constant factor, and tan loss depicted a decreasing trend with Ho3+ ions concentration. The single-domain ferrimagnetism is confirmed by the squareness ratio, which is < 0.5. The Ms was found to be decreased while Hc was increased. The significant results of the dielectric as well as magnetic properties of these nano ferrites suggested their use in high-frequency devices applications.

Ac magnetoresistance and microwave absorption in Sr2FeMoO6

This work investigates the microwave absorption property of the ferrimagnetic double perovskite, Sr2FeMoO6 (SFMO) using two different methods: magnetoimpedance (MI) and lock-in based broadband magnetic resonance detection. In the MI method, radio frequency (rf) current (f = 0.001 to 2.8 GHz) is injected into the sample. When dc magnetic field is swept, rf resistance exhibits a single sharp peak centred at H = 0 for f &amp;lt; 0.1 MHz. As f increases, the peak at H = 0 transforms into a dip accompanied by symmetrical double peaks at H = ±HP, which we attribute to the ferromagnetic resonance within the grains. HP increases with increasing frequency of the current. In the lock-in based broadband method the sample, placed on top of a coplanar waveguide, experiences an intense microwave magnetic field from the waveguide, and the field derivative of microwave power absorption is measured as the dc magnetic field is swept. Correlation between MI and microwave power absorption is shown. Landé g factors obtained from both the measurements are close, equal to 2.085, which implies the presence of Fe3+ cations. Large ac magnetoresistance in SFMO compared to its dc value, dominated by the dynamics of transverse permeability and ferromagnetic resonance within grains could be exploited for high-frequency device applications.

Fabrication of highly resistive La–Zn co-substituted spinel strontium nanoferrites for high frequency devices applications

The spinel La–Zn co-doped strontium nanoferrites having general formula of Sr1-xLaxFe2-yZnyO4 (0.0≤x ≤ 0.1, 0.0≤y ≤ 1.0) have been synthesized. X-ray diffraction studies have been revealed successful fabrication of ferrites. Scanning electron microscopy results have shown that size of the particle of the ferrite samples lie in nano-range. DC electrical resistivity at room temperature increases with La3+ and Zn2+ ions concentration while dielectric parameters and AC conductivity decreases with concentration of these ions. Frequency dependent behavior of dielectric parameters has shown that values of these dielectric parameters decrease with frequency initially at lower values of frequency and then become almost constant at higher values of frequency. Electrochemical impedance spectroscopy data shows that the charge transfer phenomenon is mainly controlled by grain boundaries. Further, enhanced DC resistivity ranging from 1.08 × 109 to 1.67 × 109 Ω cm and low dielectric loss values of the La–Zn co-doped strontium nanoferrites suggest their applications in high frequency devices.

First-principles investigation of structural, elastic, thermodynamic, electronic and optical properties of lead-free double perovskites halides: Cs2LiYX6 (X = Br, I)

We present a comprehensive first-principles study on the physical properties of the lead-free double perovskites halides, Cs2LiYX6 (X = Br, I). Our calculated results of lattice constants (a0) of both compounds are in nice agreement with the reported experimental and theoretical investigations. The predicted band structures of both compounds show that both compounds are wide and direct bandgap materials at T-point. Similarly, our computed results of elastic analysis predict that the investigated materials are elastically anisotropic, mechanically stable, and of ductile nature. The results of optical parameters such as absorption coefficients, refractive index, optical conductivity, optical reflectivity, electron energy loss, and extinction coefficients for an energy range of 0–14 eV are calculated and analyzed as well. The analysis of obtained results of wide and direct band gaps as well as optical parameters particularly absorption coefficients reflect the suitability of both compounds for ultraviolet high-frequency device applications.

Infra-Red Emission and Electrochemical Properties of CuO/ZnO Nanocubes

This study proposes a facile cost-effective precipitation method to synthesis three-dimensional CuO/ZnO nanocubes structure to fabricate a cost-effective energy storage device. X-ray diffraction reveals that the synthesized CuO and ZnO has monoclinic and hexagonal structure without impurity. Composition and functional group are confirmed by FT-Raman studies and EDAX spectrum. High resolution Scanning Electron Microscope shows that ZnO substitution prompts spherical to cube. The optical indirect bandgap is found to be 1.77 and 1.93 eV for CuO and CuO/ZnO respectively. Electrochemical performance of three-dimensional structure of pseudocapacitive CuO/ZnO nanocubes is facilitated electron diffusion pathways and more active sites for electrochemical reactions. An electrochemical impedance study shows that the CuO/ZnO nanocubes have higher charge transfer rate. It reveals electrochemical performance with a specific capacitance of 208 F/g at a scan rate of 5 mV/s. Dielectric properties of CuO/ZnO nanocubes can be used in high-frequency device applications. The fluorescence spectrum validates that the infra-red emission from CuO and CuO/ZnO might be used in optoelectronic devices. This is the first ever report on infra-red emission and dielectric properties of CuO/ZnO nanocubes.