Applications In Electronic Devices Research Articles

Synthesis and Characterization of CdS and Sr-Doped CdS Quantum Dots: Impedance Analysis for Nano-Tuned Electronic Applications

This study reports the synthesis and comprehensive characterization of cadmium sulfide (CdS) and strontium-doped CdS quantum dots (QDs) using a straightforward chemical precipitation method. N, N-Dimethylformamide served as the stabilizing agent, while specific metal precursors facilitated the formation of the nanostructures. The incorporation of strontium into the CdS matrix aimed to enhance the electronic properties of the quantum dots. Energy Dispersive X-ray Analysis (EDAX) confirmed the successful doping of Sr into the CdS QDs. X-ray Diffraction (XRD) analysis verified the high-crystallinity of the synthesized quantum dots, with the mean crystal sizes determined to be 3.18 nm for pure CdS and 3.99 nm for Sr-doped CdS (2mM and 4mM concentrations). Impedance spectroscopy was utilized to study the frequency-dependent electrical properties of the QDs at room temperature, revealing significant variations in impedance with frequency. The results demonstrated that both pure and Sr-doped CdS QDs exhibit capacitive admittance, which is indicative of their potential application in nano-tuned electronic devices. The ability to fine-tune the resonant frequency by controlling the size and doping level of the quantum dots presents a significant advantage for their use in advanced electronic applications. The study highlights the promising application of CdS and Sr-doped CdS quantum dots in the development of high-performance, frequency-tunable nanoscale electronic devices.

Beta-Gallium Oxide Material and Device Technologies

Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the important physical properties of β-Ga2O3 for electronic device applications, followed by bulk melt growth and thin-film epitaxial growth technologies. Then, state-of-the-art β-Ga2O3 transistor and diode technologies are discussed.

Correction to “Fabrication of Highly Transparent Substrates from Waste Materials for Electronic Device Applications”

Correction to “Fabrication of Highly Transparent Substrates from Waste Materials for Electronic Device Applications”

Electromechanical responses of a piezoelectric semiconducting nanoplate with the Steigmann-Ogden surface

Abstract Piezoelectric semiconductors (PSCs) find widespread applications in smart electronic devices due to their unique combination of piezoelectric and semiconductive properties. With the increasing demand for smaller and more efficient electronic devices, the performance of their components needs to be carefully optimized, especially when they are scaled down to nanoscale sizes. Pioneering studies have demonstrated that the surface elastic properties play a significant role in determining the mechanical performance of nanoscale materials and structures. Therefore, it is important to comprehensively investigate the effects of surface elasticity, including surface residual stress, surface membrane stiffness and surface bending stiffness, on the electromechanical responses of a PSC nanoplate. Additionally, it is also crucial to examine the influence of flexoelectricity at the nanoscale. Our results demonstrate that surface elastic properties predominantly impact mechanical performance, while the flexoelectric effect plays a more prominent role in electric field and redistribution of charge carriers. In particular, the significance of surface bending rigidity, which was often overlooked in previous literature, becomes pronounced when the thickness of a PSC nanoplateisless than 10 nm. Furthermore, the dependence of natural vibration frequency on surface elastic moduli, flexoelectricity and size is also systematically explored. The redistributions of electric potential and charge carriers across the cross-section are also evidently affected. Our findings provide valuable insights for improving the performance of electronic devices that utilize nanoscale PSCs.

Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements

Two-dimensional (2D) layered materials have been actively explored for electronic device applications because of their ability to form van der Waals heterostructures with unique electronic properties. Vertical integration of atomically thin 2D materials can enable the design of a three-dimensional (3D) circuit which is a promising pathway to continuously increase device density. In this study, we vertically stack 2D materials, such as graphene (Gr), MoS2, and black phosphorus (BP) to build transistors, heterostructure p–n diodes, and 3D logic circuits. The vertical transistors built from MoS2 or BP semiconductor exhibit a good on-off ratio of up to 103 and a high current density of ∼200 Acm−2 at a very small V DS of 50 mV. The Gr/BP/MoS2 vertical heterostructure p–n diodes show a high gate-tunable rectification ratio of 102. Finally, we have demonstrated a 3D CMOS inverter by vertical integration of Gr, BP (p-channel), Gr, MoS2 (n-channel), and a 50-nm-thick gold film in sequence. The ability to vertically stack 2D layered materials by van der Waals interactions offers an alternative way to design future 3D integrated circuits.

Optimization of fluorinated phenyl azides as universal photocrosslinkers for semiconducting polymers

Fluorinated phenyl azides (FPA) enable photo-structuring of π-conjugated polymer films for electronic device applications. Despite their potential, FPAs have faced limitations regarding their crosslinking efficiency, and more importantly, their impact on critical semiconductor properties, such as charge-carrier mobility. Here, we report that azide photolysis and photocrosslinking can achieve unity quantum efficiencies for specific FPAs. This suggests preferential nitrene insertion into unactivated C‒H bonds over benzazirine and ketenimine reactions, which we attribute to rapid interconversion between the initially formed hot states. Furthermore, we establish a structure‒activity relationship for carrier mobility quenching. The binding affinity of FPA crosslinker to polymer π-stacks governs its propensity for mobility quenching in both PM6 and PBDB-T used as model conjugated polymers. This binding affinity can be suppressed by FPA ring substitution, but varies in a non-trivial way with π-stack order. Utilizing the optimal FPA, photocrosslinking enables the fabrication of morphology-stabilized, acceptor-infiltrated donor polymer networks (that is, PBDB-T: ITIC and PM6: Y6) for solar cells. Our findings demonstrate the exceptional potential of the FPA photochemistry and offer a promising approach to address the challenges of modelling realistic molecular interactions in complex polymer morphologies, moving beyond the limitations of Flory‒Huggins mean field theory.

Critical factors for enhancing electrical performance in LaGdO3 capacitor

This study investigates the characteristics of metal/LaGdO3/Si capacitors using LaGdO3 as the dielectric material. LaGdO3 thin films were deposited using radio-frequency magnetron sputtering, and the effects of different process parameters, such as annealing temperature, electrode materials, and oxygen ratio, on the capacitance characteristics were investigated. Results showed that the presence of oxygen vacancies affects the dielectric constant, flat-band voltage, and breakdown field of LaGdO3 films. The optimal annealing temperature for the LaGdO3/Si stack was identified to be 600 °C, resulting in a dielectric constant of 13.9 and a flat-band voltage shift of 0.1 V. Introducing 10 % O2 during deposition effectively repaired oxygen vacancies in the film, while excessively high oxygen proportions resulted in a lower dielectric constant and a higher flat-band voltage shift. Moreover, the electrode material was found to affect the capacitance characteristics. The dielectric constants for Al/LaGdO3/Si, Ti/LaGdO3/Si, and Pt/Ti/LaGdO3/Si capacitors were 10.0, 16.3, and 17.3, respectively. The flat-band voltage shifts were −0.7, −0.42, and −0.03 V, with hysteresis voltages of 345, 117, and 32 mV, respectively. The Pt/Ti/LaGdO3/Si device exhibited the lowest oxide defect density, indicating superior interface quality and potentially enhanced device performance. In addition, the band diagrams for metal/LaGdO3/Si were constructed. This study demonstrates that oxygen vacancies and electrode materials are crucial factors influencing the capacitance characteristics of LaGdO3 films. The electrical properties of LaGdO3 films can be effectively improved by controlling process parameters, enhancing their potential for applications in capacitors and other electronic devices.

Change in nonlinear optical response of C24 nanocage upon doping with lithium based superalkalis

Density functional theory (DFT) calculations are used to analyze the change in nonlinear optical (NLO) response, electronic and geometric properties of the Li based superalkalis doped C24 nanocage. It was observed that the adsorption of Li4N, Li3O and Li2F superalkalis on C24 nanocage results in thermodynamically stable isomers (A-F). The energy gap between the highest occupied and the lowest unoccupied molecular orbitals (GH-L) is reduced after superalkalis doping on carbon (C24) nanocage. Density of states spectra depict the strong contribution of superalkalis in HOMOs of the considered complexes. Natural bond orbital (NBO) charge analysis showed that the charge is being transferred from superalkali toward C24 nanocage. The values of polarizability (α o ) and hyperpolarizability (β o ) showed that doping of superalkalis on C24 has a significant effect on its NLO response, resulting in a considerable increase in values of α o and β o . Li4N@C24 isomer E showed the highest β o value of 6470.74 au. Time dependent density functional theory (TD-DFT) calculations are implemented to analyze the absorption spectra. This research provides unique and highly efficient superalkalis doped C24 isomers for their applications in future electronic devices.

A super-elastic wearable strain sensor based on PU/CNTs yarns for human-motion detection

Yarn-based strain sensors increasingly garner attention for their potential applications in intelligent wearable electronic devices. Developing highly elastic conductive composite yarns and integrating them into fabrics poses a significant challenge in manufacturing flexible electronic devices. In this study, a polyurethane (PU)/carbon nanotubes (CNTs) composite nanofiber yarn was successfully and continuously prepared using a simple conjugate spinning technique. The resulting yarn exhibited excellent mechanical properties, with a high tensile strength of up to 56.7 MPa and an elongation at break of 504 %. A yarn with a dual conductive network was created using CNTs ink dip-coating. It demonstrated excellent conductivity (8.77 S/cm), exceptional linear variation, and reusability. The sensor remained stable after 1000 cycles of testing, exhibiting a relative electrical resistance change of up to 594 % under a strain of 350 %. Additionally, taking advantage of the inherent knittability of one-dimensional yarn structures, a susceptible wearable textile-type strain sensor was successfully developed using textile knitting technology. This sensor can be directly attached to the surface of the human body for real-time monitoring of human body dynamics. This sensor showcases significant promise for use in flexible, intelligent, wearable electronic devices.

Intermediate Intercluster Bond Orders. Electronic Communication in Au38(SR)24 Superatomic Molecules.

Ligand-protected gold clusters remain potential building blocks for envisaged molecular materials. The archetypal Au38(SR)24 cluster can be viewed as a robust template for the fusion of two Au25(SR)18 - cluster units, retaining a bi-icosahedral Au23 core. Via electrochemical properties, the overall charge state can be selectively tuned, enabling the access of 14 valence electron (ve) species featuring a single intercluster bond and nearby charge from -1 to +3, achieving related species bearing 15- to 11-ve with variable intercluster bond orders. Here, we explore the characteristics of intermediate intercluster bond orders in order to provide insights into the plausible electron communication between the constituent building blocks, with Au38(SR)24, as a representative template. Our results denote a small structural variation along -1 to +3 charge states, provided by the core-protecting ligand interaction, which is enhanced towards more oxidized species. The remaining unpaired electron from intermediate intercluster bond orders of 1.5 for Au38(SR)24 1-, 1.5 for Au38(SR)24 1+, and 2.5 for Au38(SR)24 3+, holds delocalized characteristics between the building block units, favoring electron communication for conductive and cooperative cluster aggregates. Such features are relevant for the formation of molecular electronic device applications, favoring the rationalization prior to engaging in explorative synthesis of larger ligand-protected cluster aggregates.

Dynamic Metal-Coordinated Adhesive and Self-Healable Antifreezing Hydrogels for Strain Sensing, Flexible Supercapacitors, and EMI Shielding Applications.

Dynamic metal-coordinated adhesive and self-healable hydrogel materials have garnered significant attention in recent years due to their potential applications in various fields. These hydrogels can form reversible metal-ligand bonds, resulting in a network structure that can be easily broken and reformed, leading to self-healing capabilities. In addition, these hydrogels possess excellent mechanical strength and flexibility, making them suitable for strain-sensing applications. In this work, we have developed a mechanically robust, highly stretchable, self-healing, and adhesive hydrogel by incorporating Ca2+-dicarboxylate dynamic metal-ligand cross-links in combination with low density chemical cross-links into a poly(acrylamide-co-maleic acid) copolymer structure. Utilizing the reversible nature of the Ca2+-dicarboxylate bond, the hydrogel exhibited a tensile strength of up to ∼250 kPa and was able to stretch to 15-16 times its original length. The hydrogel exhibited a high fracture energy of ∼1500 J m-2, similar to that of cartilage. Furthermore, the hydrogel showed good recovery, fatigue resistance, and fast self-healing properties due to the reversible Ca2+-dicarboxylate cross-links. The presence of Ca2+ resulted in a highly conductive hydrogel, which was utilized to design a flexible resistive strain sensor. This hydrogel can strongly adhere to different substrates, making it advantageous for applications in flexible electronic devices. When adhered to human body parts, the hydrogel can efficiently detect limb movements. The hydrogel also exhibited excellent performance as a solid electrolyte for flexible supercapacitors, with a capacitance of ∼260 F/g at 0.5 A/g current density. Due to its antifreezing and antidehydration properties, this hydrogel retains its flexibility at subzero temperatures for an extended period. Additionally, the porous network and high water content of the hydrogel impart remarkable electromagnetic attenuation properties, with a value of ∼38 dB in the 14.5-20.5 GHz frequency range, which is higher than any other hydrogel without conducting fillers. Overall, the hydrogel reported in this study exhibits diverse applications as a strain sensor, solid electrolyte for flexible supercapacitors, and efficient material for electromagnetic attenuation. Its multifunctional properties make it a promising candidate for use in various fields as a state-of-the-art material.

Simultaneous improvements in energy density and thermal conductivity of PAN polymer nanocomposites enabled by core-shell structure BZCT@BNNS nanofibers

If the heat generated by electronic devices in high-power applications cannot be dissipated in a timely manner, it will not only affect the use of the equipment but also reduce its service life. Therefore, there is an urgent need to develop thin films of dielectric nanocomposites with high thermal conductivity, high energy storage, and excellent flexibility and electrical insulation performance. In this study, we reported the successful preparation of BZCT nanofibers (BZCT NFs) and core-shell structures BZCT@BNNS nanofibers using electrospinning and coaxial electrospinning techniques, respectively, and there were used to composite with polyacrylonitrile (PAN) polymer matrix to prepare BZCT NFs/PAN and BZCT@BNNS/PAN dielectric nanocomposites thin film. Research has found that when the shell thickness of BNNS is 15 nm and BZCT@BNNS (15 nm) volume fraction is 20 vol%, the comprehensive performance of the dielectric nanocomposites is the best, with thermal conductivity and energy storage performance of 3.36 W m−1K−1 and 12.23 J/cm3, respectively. Therefore, the nanocomposites thin film can be used as a potential high-performance dielectric material for thermal management applications in high-power density electronic devices.

Organic Thermoelectric Materials for Wearable Electronic Devices.

Wearable electronic devices have emerged as a pivotal technology in healthcare and artificial intelligence robots. Among the materials that are employed in wearable electronic devices, organic thermoelectric materials possess great application potential due to their advantages such as flexibility, easy processing ability, no working noise, being self-powered, applicable in a wide range of scenarios, etc. However, compared with classic conductive materials and inorganic thermoelectric materials, the research on organic thermoelectric materials is still insufficient. In order to improve our understanding of the potential of organic thermoelectric materials in wearable electronic devices, this paper reviews the types of organic thermoelectric materials and composites, their assembly strategies, and their potential applications in wearable electronic devices. This review aims to guide new researchers and offer strategic insights into wearable electronic device development.

Friction Force Mapping of Molecular Ordering and Mesoscopic Phase Transformations in Layered-Crystalline Organic Semiconductor Films.

It is critical to understand molecular ordering processes in small-molecule organic semiconductor (OSC) films in optimizing electronic device applications, although it is difficult to observe and investigate the ordering characteristics at a mesoscopic or device scale. Here, we report that friction force microscopy (FFM) allows visualizing the ordering transformation process from a thermodynamically metastable phase to a stable phase at a mesoscopic scale. We utilized 2-octyl-benzothieno[3,2-b]naphtho[2,3-b]thiophene (2-C8-BTNT) as a typical highly layered-crystalline OSC. We found that the friction force between an AFM tip and spin-coated OSC films significantly depends on whether local film states are in metastable monolayer phase or stable bilayer-type herringbone (b-LHB) phase that exhibits high carrier mobility. The formation of the stable b-LHB phase leads to lower friction than the metastable monolayer phase, clearly visualizing the molecular order. Force map (Fmap) analysis indicates that the lower friction in the b-LHB phase should be associated with the reduction of interfacial adhesion force. Notably, the observed results demonstrate that the spin-coated thin film changes from continuous film with the monolayer phase to rugged microcrystal grains with the b-LHB phase when left at ambient conditions. By contrast, an appropriate post-thermal annealing process facilitates the phase transformation without inducing such morphological changes. The technique provides a unique and effective tool for revealing the relationship between processing conditions and device performance in polycrystalline OSC films.

Enhanced dielectric properties of copper substituted nickel ferrite nanoparticles for energy storage applications

In this study, it was aimed to obtain copper-substituted nickel ferrite nanoparticles, which are advantageous for use in energy storage devices such as batteries and supercapacitors that provide high energy storage capability with their high dielectric behavior, by co-precipitation method. Nickel ferrite nanoparticles in the form of CuxNi1-xFe2O4 containing copper substitution at ratios for x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0 were synthesized. X-ray diffraction Method (XRD) was used to analyze the spinel structure, the purity phase, and the crystalline size of the nanoparticles. Field Emission Scanning Electron Microscopy (FE-SEM), and Fourier Transform Infrared (FTIR) Spectroscopy were also performed to investigate the particle size, morphological distribution, and the functional groups of the samples. The structural analyses confirmed the successfully produced single-phase pure cubic spinel nickel ferrite and copper-substituted nickel ferrites with nanometer-scale particle distribution. The Impedance Spectroscopy technique was used for the characterization of the dielectric properties of the samples. Frequency-dependent complex dielectric, impedance, modulus, and alternating current (AC) conductivity mechanisms of the copper-doped nickel ferrite nanoparticles (CuxNi1-xFe2O4) were determined. The results showed that copper-induced nickel ferrite nanoparticles display a promising dielectric material consisting of grains and grain boundaries which are confirmed by Maxwell-Wagner interface-type polarization, which is in agreement with Koop's theory. Furthermore, a remarkable enhancement is obtained on the dielectric parameters of copper-induced nickel ferrites for x = 0.2, and it is seen that this is a critical value on the doping ratio. In addition, the dielectric parameters decreased between x = 0.2–0.8 ratios but still showed higher values than pure nickel ferrites, confirming that nickel ferrites have a tunable dielectric behavior depending on the stoichiometric copper doping ratios. Therefore, this may make them a promising dielectric medium for further studies in various electronic device applications.

Electrical conductivity of polyvinyl alcohol/carboxymethyl cellulose doped by zinc oxide and hematite nanoparticles for optoelectronics devices

This research explores polymer nanodielectrics, a category of materials where nanoceramic fillers are incorporated into polymers. These hybrid materials are gaining significant interest because of their tunable optical and electrical characterization, making them potentially well-suited for applications in flexible optoelectronic and organic electronic devices. Polyvinyl alcohol (PVA), Carboxymethyl cellulose (CMC), zinc oxide (ZnO), and hematite (Fe2O3) nanoparticles were utilized to fabricate PVA/CMC-ZnO/Fe2O3 films XRD analysis indicated a reduction in the crystalline character of the PVA/CMC blend following the doping of ZnO/Fe2O3 nanoparticles (NPs). FTIR data approved the complexation between the PVA/CMC blend and the ZnO/Fe2O3, leading to a decrease in intermolecular interactions within the polymeric matrix and coordination with the ZnO/Fe2O3. Electrical analysis obtained an enhancement in σac values with the increase of ZnO/Fe2O3 NPs concentration up to 30 min of laser ablation times The findings from this study suggest the promise of these materials for applications in high-performance batteries, supercapacitors, or other next-generation energy storage and conversion devices.

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal–organic chemical vapor deposition was investigated by utilizing both the AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. An atomic force microscope and high-resolution x-ray diffractometer confirm a low surface roughness of 0.26–0.34 nm and the formation of a high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit a high electron mobility of up to 1700 cm2 V−1∙s and a high carrier concentration density of (1.02–1.06 × 1013 cm−2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate a low specific contact resistivity (ρ c) of 2.7 × 10−6 Ω·cm2 and a low contact resistance (RC ) of 0.3 Ω·mm for the heterostructure with a BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 µm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA cm−2) compared to heterostructures without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, an improvement of 10.6% in the maximum saturation current (I DS) and 15.2% in on-resistance (R ON) has been achieved for the device fabricated on an Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to −1.40 dB mm−1 at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

Raman spectrum and phonon thermal transport in van der Waals semiconductor GaPS4

The emergent van der Waals semiconductor GaPS4 is heralding frontiers for gallium-based semiconductors. Despite its potential, the intricacies of its Raman spectrum and phonon heat transport remain elusive. In this research, experimental and theoretical methods are employed to give a comprehensive portrayal. The Raman spectra and phonon calculations obtained were cross-validated, affirming the study's credibility. A total of 28 Raman peaks were identified, with all phonon irreducible representations delineated. Advanced calculations unveiled notable shifts in the transition of GaPS4 from bulk to monolayer. During this process, phonons undergo a red shift, and the vibration contributions of different atoms change. The lifetime and group velocity of low wavenumber phonons are markedly reduced, suppressing the thermal conductivity in the monolayer. The thermal conductivity of GaPS4 bulk at 300 K is 0.5 W/m K, and 0.13 W/m K for monolayer, while the thermal conductivity in the cleavage direction is lower. These findings offer a detailed account of the complex Raman spectra and phonon thermal transport properties of GaPS4, setting the stage for its subsequent exploration and prospective applications in electronic and thermal devices, and contributing to enriching condensed matter theory of phonon thermal transport in van der Waals materials.

High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits.

Tin oxide is a promising channel material, offering the advantages of being low-cost and environmentally friendly and having a wide band gap. However, despite the high electron mobility of SnO2 in bulk, the corresponding thin-film transistors (TFTs) generally exhibit moderate performance, hindering their widespread application. Herein, we proposed a codoping strategy to improve both the electrical property and the stability of SnO2 TFTs. A comparative analysis between doped and undoped SnO2 was conducted. It is observed that taking advantage of the difference in ionic radii between two dopants (indium and gallium) and the tin ions in the host lattice can effectively reduce impurity-induced strain. Additionally, we investigated the effect of codoping content on SnO2 TFTs. The optimal codoped SnO2 (TIGO) TFTs demonstrate high performance, featuring a field-effect mobility of 15.9 cm2/V·s, a threshold voltage of 0.2 V, a subthreshold swing of 0.5 V/decade, and an on-to-off current ratio of 2.2 × 107. Furthermore, the devices show high stability under both positive and negative bias stress conditions with a small threshold voltage shift of 1.8 and -1.2 V, respectively. Utilizing the TIGO TFTs, we successfully constructed a resistor-loaded unipolar inverter with a high gain of 10.76. This study highlights the potential of codoped SnO2 TFTs for advanced applications in electronic devices.

A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility.

In this article, an attempt is made to explore new materials for applications in piezoelectric and electronic devices. Based on density functional theory calculation, we construct three Janus ZrGeZ3H (Z = N, P, and As) monolayers and study their stability, piezoelectricity, Raman response, and carrier mobility. The results from phonon dispersion spectra, ab initio molecular dynamics simulation, and elastic coefficients confirm the structural, thermal, and mechanical stability of these proposed structures. The ZrGeZ3H monolayers are indirect band gap semiconductors with favourable band gap energy of 1.15 and 1.00 eV for the ZrGeP3H and ZrGeAs3H, respectively, from Heyd-Scuseria-Ernzerhof functional method. It is found that the Janus ZrGeZ3H monolayers possess both in-plane and out-of-plane piezoelectric coefficients, revealing that they are potential piezoelectric candidates. In addition, the carrier mobilities of electrons and holes along transport directions are anisotropic. Notably, the ZrGeP3H and ZrGeAs3H monolayers have high electron mobility of 3639.20 and 3408.37 cm2 V-1 s-1, respectively. Our findings suggest the potential application of the Janus ZrGeZ3H monolayers in the piezoelectric and electronic fields.