Amplifier Applications Research Articles

Exploration of physical, structural, thermal, and optical properties of alkali zinc boro tellurite glasses doped with europium trioxide

In this present work we have studied the physical, structural, thermal, and optical properties of a new set of alkali zinc boro tellurite glasses doped europium trioxide prepared using the melt-quenching method. X-ray diffraction technique (XRD) and SEM were used to determine the non-crystalline property and microstructure property of the prepared samples. By using MAS-NMR spectroscopy and FTIR spectroscopy, the structural changes in the glasses were revealed. The physical properties were described by considering the densities of glass samples and hence molar volume, polaron radius, and oxygen packing density were measured. Thermal stability of glasses was perceived by performing DSC analysis and values ranges from 145 to 190 °C. Using UV–visible absorption spectra, it was possible to calculate the optical properties. The highest refractive index is found as 2.275 for glass AZBTE0 and the lowest is 2.241 for AZBTE5 glass. The ionic behaviour of the glasses was determined by electronegativity and values lie in the range of 1.51 to 1.688. The outcomes of the physical, thermal, and optical characteristics of glasses are intended for potential uses in optical switching and Europium doped fibre amplifier applications.

Properties of Thin Film Composites of rGO–SnO2 and Modeling of Ultraviolet Laser‐Induced Conductivity Decay

AbstractReduced graphene oxide (rGO) and tin dioxide (SnO2) form composites in a wide range of SnO2/rGO proportions, which are deposited as thin films on borosilicate glass and silica substrates. The rGO proportion affects the SnO2 optical properties and the sample surface, as observed by optical transmittance and confocal and scanning electron microscopies images, mainly for high proportion of rGO. For low proportion, the presence of small surface islands may contribute to optical confinement. The evaluated bandgap is basically from the SnO2 matrix unless the presence of rGO affects the optical absorption edge. Monochromatic ultraviolet light from a He–Cd laser (325 nm) irradiating on the composite film increases the conductivity, giving rise to the phenomenon of persistent photoconductivity (PPC), even very close to room temperature. Modeling by considering mainly the SnO2/rGO interface barrier for electron transport, yield an interface energy barrier of 250 meV. The strong response to ultraviolet light and the phenomenon of PPC indicates potential application in amplifiers, which could be adjusted by doping with rare‐earth ions, such as Er3+ in the SnO2 matrix.

Non-Hermitian mode management in periodically modulated waveguide amplifiers

We propose an efficient mode management scheme in active nonlinear multimode fibers based on non-Hermitian potentials in the longitudinal direction with an antisymmetric transverse profile. The proposal takes advantage of the nonlinear saturation toward particular mode configurations, which can be tuned by the non-Hermitian potential. We demonstrate flexible control of the beam profile within the parameter space of the applied potential with various possibilities, such as improving the beam quality by condensing photons to the lowest order Hermite mode, exciting higher order modes, or engineering a desired mode profile as a combination of modes. The effect is also analytically predicted using a mode-expansion approach, showing good agreement with the full model calculations based on the complex Ginzburg–Landau equation. This study was performed for 1D planar guiding structures, yet the results can be extended to 2D fibers and could be very useful in applications of fiber amplifiers and lasers.

Application Of High Bandwidth Two-Stage Amplifier in Communication System

With the rapid development of communication technology, the application of high-bandwidth amplifiers in communication systems becomes more and more important. Currently researchers have applied high bandwidth two-stage amplifier technology in many fields such as cloud computing and data centers, video and audio transmission, virtual reality and augmented reality, Internet of Things, financial transactions, etc., and in this paper we will focus on its application in communication systems. In this paper, the basic principle and structure of two-stage amplifier are firstly described, and then the key theories of high-bandwidth technology including its concept, importance, principle and core technology of high-bandwidth design technology as well as stability analysis and design are elaborated, and the applications of high-bandwidth two-stage amplifiers in wireless communication system, fiber optic communication system, data center network, and satellite communication are enumerated. In summary, high-bandwidth two-stage amplifiers play a key role in a variety of communication systems, helping to provide stable, high-speed, long-range signal transmission. Through the research of this thesis, it is expected to provide new references and ideas for the research and development in the field of communication technology, and to promote the progress and innovation of communication system.

Supermode lasing and light amplification in multicore bismuth-doped fiber

Multicore fibers are promising structures with specific light propagation properties, which can be managed to benefit several applications in optical communications, fiber lasers and amplifiers, high-resolution imaging, and fiber-based sensors. The current use of multicore fibers in laser technology is mainly focused on in-phase coherent beam combining in far-field regions (out-cavity) using bulk optical elements. However, this approach is challenging in terms of the power scalability of all-fiber lasers (intra-cavity), particularly with using low-gain media, where it is needed to provide mode-coupling (supermode propagation) stability along relatively long lengths. Here, we report a conceptual design and fabrication of a multicore bismuth-doped fiber that is capable of achieving light amplification and stable lasing in the E-telecom band inside the cavity using the supermode selection approach. By analysis of experimental and simulation data, it was found that the employment of the proposed design of a Bi-doped fiber provides a considerable advantage over the single-core fiber in terms of laser performance (output power, slope efficiency) in the cladding-pumped configuration. These results open up new opportunities for further advancement of the optical fiber technology towards efficient bismuth-doped fiber-integrated amplifiers and lasers for the O+E+S+C+L+U-telecom bands, which may find important applications, especially for the development of next-generation multiband optical transmission systems.

Recent Advances and Applications of Semiconductor Optical Amplifiers

This paper describes the recent advances in device designs and optical transmission applications of semiconductor optical amplifiers (SOA). The device advances described are quantum-dot-based SOA and photonic-integrated circuits using SOA. The use of nonlinear properties of SOAs in high-speed optical transmission is discussed.

Kinetostatic Modeling of an Asymmetrical Double-Stepped Beam for Displacement Amplification

Abstract A kinetostatic model of an asymmetrical double-stepped beam under axial loading is developed. The beam is composed of two thick segments and three thin segments where a thick segment is between two thin segments, and the longitudinal axis of the thick segment is not colinear with that of the thin segment. The kinetostatic model based on the beam constraint model (BCM) is capable of predicting accurate bending and near-buckling behaviors of the beam. A virtual rigid link neighboring the noncolinear segments is introduced in the BCM to broaden the applicability of the BCM. An analytical formula to represent the critical load of a symmetrical double-stepped beam under axial loading is derived and the value calculated by the formula agrees with the limit load of the asymmetrical double-stepped beam within the elastic range. The investigated beam has potential applications in displacement amplifiers and robotic grippers.

Exploring the optical properties of the 1.53 μm emission in Er3+-doped glass, anti-glass and ceramic in TeO2 - Ta2O5 – Bi2O3 system

A series of 80TeO2 - 10Ta2O5 – 10Bi2O3 glasses, anti-glasses and ceramics doped with different concentrations of Er₂O₃, ranging from 0.25 % to 2 % mol, were synthesized to explore their structural transformation and optical properties. The maximum solubility of Er₂O₃ was identified at 1.25 % mol, beyond which the glass transitioned from an amorphous to a crystalline structure. The anti-glasses and ceramics obtained from the heat treatment of the parent glasses were also studied to gain insights into their optical properties. This study reveals a direct relationship between Er3+ ions concentration and full width at half maximum (FWHM) of photoluminescence spectra. The increase in Er3+ ions concentration correlates with a rise in FWHM, indicative of spectral broadening. Anti-glass exhibits a higher emission intensity, followed by ceramic and then glass, reflecting their distinct structural properties. Anti-glass doped with 1 % mol Er2O3 shows an FWHM over 130 nm under 578 mW pumping. The lifetime of the excited state 4I13/2 increases with the Er2O3 content in the anti-glass and the ceramic, with a notable decrease at 1 % mol Er2O3 ions for both materials, while in glass, the decrease is observed at 0.5 %. Emission cross-sections decrease with increasing Er3+ ions concentration and power, influenced by factors like thermal effects and saturation. The Judd-Ofelt theory highlights structural differences, with glasses having a more disordered structure and with an increase in the Ω₆ parameter across all materials, implying enhanced electric dipole line strength and spontaneous emission probability with higher Er₂O₃ content. Overall, this comprehensive study provides valuable insights into the optical behavior of Er3+ ions in these materials, essential for applications in laser design and optical amplifiers.

Quantum size luminescence effect in local field enhancement of Ag NP added Er3+ glass system

This research investigates the effect of silver (Ag) addition on the photoluminescence enhancement properties of 20Li2O–5Bi2O3-(74-x)TeO2–1Er2O3-xAg glass samples, aiming to optimize luminescence for applications in optical amplifiers and laser technologies. The enhancement of luminescence properties for both upconversion 4S3/2 → 4I15/2 green band and 4F9/2 → 4I15/2 red peak luminescence observed are analyzed by quantum yield ξ and relative intensity enhancement (I/Io) parameters. The enhancement on green luminescence properties are observed with high ξgreen and I/Iogreen at x < 1 mol% which can be explained within the cavity quantum electrodynamics (CQED) framework due to very low dipolar localized surface plasmon mode volume Veff (∼10–20 × 10−22 m3) allowing stronger quantum size luminescence effect. Meanwhile, the quenching of ξgreen (0.61) at x≥ 1 mol% may indicate the weaker quantum size luminescence effect. An anomalous enhancement on red luminescence properties with high ξred (2.07) and I/Iored (1.79) at x = 1.25 mol% cannot be explained by CQED framework but from phonon-assisted energy transfer (PET) mechanism occurred due to structural changes. The near-field and far-field parameters of AgNP are simulated. Results demonstrated stronger near field electric field distribution enhancement at x = 0.5 mol% and x = 0.75 mol%. This suggests that an optimal AgNP radius exists for promoting the quantum size luminescence effect in our glass samples, falling within the range of 50.00–60.00 nm. Further supporting this conclusion, theoretical calculations using light intensity scattering efficiency (Qsca) revealed the highest values between 50.00 and 70.00 nm of AgNP radius in our glass samples.

Comparative experimental study of different fetch distances, interpolation algorithms, source substrate noise, sampling point counts, and resolution for NF of BDFA

Noise figure (NF) is a key metric for Fiber amplifier (FA), which affects the performance of signal transmission. The main factors affecting the NF are related to the amplified spontaneous emission (ASE) characteristics of the active fiber itself. However, during our study of NF, we found some easily overlooked factors that can have a significant impact on the results, such as the fetch distances and interpolation algorithm for calculating the ASE where the signal wavelength is located. Further, to date, we have also found little relevant research on whether the sampling characteristics of the instrument and the substrate noise contribute to the NF. On the other hand, bismuth-doped fiber amplifiers (BDFA) have developed rapidly in recent years. In this work, we use BDFA as an example, using different fetch distances, interpolation algorithms, substrate noise, and sampling variables (resolution and point counts), to comprehensively compare and analyze the impact caused by NF. The experimental results suggest that the distance between the sampling locations on either side of the signal and the center wavelength must exceed the signal’s bandwidth to obtain the actual NF; Linear interpolation and cubic interpolation are more suitable for calculating the NF; Even using a high power input signal of 0 dBm, the NF is only degraded by about 1.8% compared to the case where the substrate noise is ignored; In addition, the effect of different sampling point counts and resolutions have less influence on the NF. We believe this work provides a reliable reference value for calculating the accuracy of NF and will be useful for practical applications of active-fiber amplifiers.

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

A nitrogen-polarity (N-polarity) GaN-based high electron mobility transistor (HEMT) shows great potential for high-frequency solid-state power amplifier applications because its two-dimensional electron gas (2DEG) density and mobility are minimally affected by device scaling. However, the Schottky barrier height (SBH) of N-polarity GaN is low. This leads to a large gate leakage in N-polarity GaN-based HEMTs. In this work, we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes (SBDs) with Ni/Au electrodes. Our results show that the annealing time and temperature have a large influence on the electrical properties of N-polarity GaN SBDs. Compared to the N-polarity SBD without annealing, the SBH and rectification ratio at ±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700, respectively, and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process. Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the interface state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emission from the trap state at low reverse bias.

Crystal growth, structure, spectral and thermal properties of ScxY1-xCOB single crystals

Yttrium calcium oxyborate (YCOB) crystals are excellent nonlinear optical crystals. To enhance the thermal properties of YCOB crystal, Sc-doped YCOB crystals, denoted as ScxY1-xCa4O(BO3)3 (x = 0.1 and 0.2) were grown using the Czochralski method along the b-direction. Various measurements, including X-ray powder diffraction, rocking curve analysis, inductively coupled plasma-optical emission spectroscopy (ICP-OES), transmission spectroscopy, density measurements, and thermal property assessments, were conducted to evaluate the characteristics of the ScxY1-xCOB crystals. The results indicated that ScxY1-xCOB crystals have an isostructural arrangement like YCOB, with segregation coefficients of approximately 0.2. The full width at half maximum (FWHM) values of the rocking curves of the ScxY1-xCOB (x = 0.1 and 0.2) crystals are 33.9″ and 29.3″, respectively. Furthermore, the specific heat, thermal diffusion coefficients and thermal conductivity of the ScxY1-xCOB crystals were examined in the temperature range of 298–573 K, which were found to be higher than those of pure YCOB. These high-quality ScxY1-xCOB crystals are expected to serve as suitable nonlinear optical crystals media for optical parametric chirped pulse amplification (OPCPA) applications.

Systematic analysis of the principles and application scenarios of Low-Noise Amplifier

As society advances, new ideas and products are increasingly integrated into our daily lives. 5th generation mobile networks tech enables faster, lag-free connectivity, raising performance standards for components like Low-Noise Amplifiers. Summarizing Low-Noise Amplifier tech and applications helps researchers and firms leverage past knowledge and explore innovations. This paper analyzes Low-Noise Amplifier development and application, discussing types, principles, key performance indicators, and circuit structures of basic amplifiers. Five vital Low-Noise Amplifier characteristicsnoise figure, impedance matching, linearity, stability, and gainare examined. The author introduces design and application cases in radio astronomy, navigation systems, and 5th generation mobile networks communications based on Low-Noise Amplifier characteristics and performance requirements. The author concludes that advancing radio frequency tech requires improved Low-Noise Amplifiers, especially for high-frequency signals in 5th generation mobile networks. Promising noise performance enhancements come from technologies like modified high electron mobility transistors on GaAs and InP substrates. Monolithic Microwave Integrated Circuit integration reduces size while maintaining cost-effective performance. Future advancements in these areas could further boost Low-Noise Amplifier performance.

High-efficiency fiber-cladding power stripper based on all-dielectric optical thin films.

Although conventional fiber-cladding power strippers (CPSs) based on the techniques of high-index adhesive or corrosive liquids onto fiber inner cladding have been well developed, they are still facing challenges in special applications such as spaceborne or radiation-environment fiber lasers and amplifiers. In this paper, we propose and fabricate high-efficiency CPSs based on all-dielectric optical thin films. By numerically analyzing the propagation characteristics of cladding light at the thin film interface, we design a high-index T a 2 O 5 CPS and A l 2 O 3 CPS with single- and cascaded-layer films coated onto the fiber inner cladding, respectively. In our experiment, the CPSs are successfully fabricated onto the inner-cladding surface of 10/125 double-clad fiber based on ion-beam-assisted deposition technology. The stripping efficiency for the 976nm residual cladding power was measured up to 99.38%, and the stripping power of the fiber CPS without active cooling can be 24W at least. Such CPS could be advantageous for applications in spaceborne-based fiber lasers or amplifiers (e.g.,gravitational wave detection, spaceborne lidar).

Spectroscopic characteristics and gain cross-section profiles of erbium-doped boro-tellurite glasses for optical amplifier applications

A series of glass compositions (60-x) B2O3–10TeO2–15BaCO3–15MgF2–xEr2O3 with diverse quantities of erbium ions (Er3+) was synthesized using the melt quenching method and the samples were subjected to thorough characterization to explore their optical and structural properties. In order to ascertain the amorphous nature of the glass and acquire a deeper understanding of its chemical bonding, conventional methods of characterization, such as X-ray diffraction and Fourier transform infrared spectroscopy, were utilized. The Judd-Ofelt intensity parameters were computed using the absorption spectra of glasses doped with Er3+, providing vital information about the local environment and coordination of Er3+ ions in the glass matrix. The glasses underwent the collection of near -infrared (NIR) emission spectra. Following this, an analysis was carried out to look into and understand the spectral properties, emission cross-section, and gain coefficient parameters of the glasses. The spectra obtained discernible characteristics, notably a significant near-infrared (NIR) band associated with the transition between the 4I13/2 and 4I15/2 states. This band was seen to have a central wavelength of 1530 nm. This emission band spanned the wavelengths commonly used in optical communication systems (S + C) -bands, making these glasses suitable candidates for applications such as wavelength division multiplexing (WDM). These results suggest that the boro-tellurite glass may have potential use in photonic devices designed for near-infrared applications, including optical communication systems.

Boosting the Downconversion Luminescence of Tm3+-Doped Nanoparticles for S-Band Polymer Waveguide Amplifier.

Polymer waveguide devices have attracted increasing interest in several rapidly developing areas of broadband communications since they are easily adaptable to on-chip integration and promise low propagation losses. As a key member of the waveguide gain medium, lanthanide doped nanoparticles have been intensively studied to improve the downconversion luminescence. However, current research efforts are almost confined to erbium-doped nanoparticles and amplifiers operating at the C-band; boosting the downconversion luminescence of Tm3+ for S-band optical amplification still remains a challenge. Here we report a Tb3+-induced deactivation control to enhance Tm3+ downconversion luminescence in a stoichiometric Yb lattice without suffering from concentration quenching. We also demonstrate their potential application in an S-band waveguide amplifier and record a maximum optical gain of 18 dB at 1464 nm. Our findings provide valuable insights into the fundamental understanding of deactivation-controlled luminescence enhancement and open up a new avenue toward the development of an S-band polymer waveguide amplifier with high gain.

Germanium oxide hybridization enhancing the optical response of Bi‐doped glass and fiber

AbstractBismuth (Bi)‐doped glass and fiber materials exhibit excellent optical performance and have potential in fields such as fiber communication and tunable lasers. However, the preparation of Bi‐doped glass and fiber with high optical activity is still confronted with huge challenges. This study proposes a germanium oxide hybridization strategy to enhance near‐infrared emission in Bi‐doped glass. In addition, by the systematical optimization of the optical response and processability of the glass system, Bi‐doped glass fibers are successfully constructed. The constructed glass fibers have excellent optical performance, and the enhanced amplified spontaneous emission is realized. They show potentials for applications in broadband fiber amplifiers and tunable lasers.

Tunable ultra-broadband multi-band NIR emission in Bi-doped aluminogermanate glasses and fibers via controllable Al2O3 content for broadband amplifiers

The tunable ultra-broadband multi-band NIR emission of Bi-doped germanate glass and fiber can be achieved via constructing various glass local network environments with steerable Al2O3 content and show potential applications in broadband amplifiers.

Theoretical study on radiation effect on threshold of transverse mode instability of Yb-doped fiber amplifiers

&lt;sec&gt;Yb-doped fiber amplifiers and their applications in radiation environments have become more and more attractive in recent years. However, the radiation effect will cause damage to the Yb-doped fibers, which can give negative effect on the output properties of Yb-doped fiber amplifiers. In this work, the influence of radiation effect on the transverse mode instability (TMI) of Yb-doped fiber amplifier is studied. TMI can couple the single light from the fundamental mode to high-order mode, thereby degenerating the beam quality of fiber amplifier. TMI is considered a key limitation of power up-scaling of fiber amplifiers.&lt;/sec&gt;&lt;sec&gt;In this work, the radiation effect on the TMI is studied theoretically, and a formula of TMI threshold is presented by taking the radiation-induced attenuation (RIA), the most important radiation effect for the TMI, into account. The formula is deduced by introducing the loss of signal light induced by RIA into the formerly reported TMI-threshold formula which can be obtained by the linear stability analysis of the numerical model studying the TMI. Then, the relationship between the TMI and radiation dose is also given with the help of Power-Law describing the relationship between the RIA and radiation dose.&lt;/sec&gt;&lt;sec&gt;With the formula, the variations of TMI threshold with the radiation dose and RIA are studied. It is found, as expected, that the TMI threshold decreases monotonically with the increase of RIA or radiation dose. Nevertheless, it is unexpectedly found that, to some extent, the gain coefficient of fiber amplifiers will also affect the radiation effect on TMI threshold. The results reveal that the increase of gain coefficient will lower the sensitivity of TMI threshold to the radiation dose. However, it is also implied that the gain coefficient cannot be too large because it can also make the TMI threshold lowered. Therefore, in order to maintain a high TMI threshold in a radiation environment, sufficient radiation resistance of Yb-doped fiber is essential.&lt;/sec&gt;&lt;sec&gt;Because the RIA can affect not only the TMI threshold but also the output power or efficiency of Yb-doped fiber amplifier, the comparison between two effects of RIA is also discussed. It is found that the threshold of TMI is more sensitive to the radiation than to the output power or efficiency (see the figure attached below), which means that the TMI can exist in the irradiated Yb-doped fiber amplifier, although the output power is reduced because of RIA. This result can be verified by the experimental observation reported formerly. As a result, TMI can become a key limitation to the output power of Yb-doped fiber amplifier in radiation environments. The relevant results can provide significant guidance for the applications of Yb-doped fiber amplifiers in radiation environments.&lt;/sec&gt;

Broadband 1.0 µm emission in Nd3+/Yb3+ co-doped phosphate glasses and fibers for photonic applications.

In this work, the spectroscopic properties of 1.0 µm emission in Nd3+/Yb3+ co-doped phosphate glasses were systematically investigated under 808 nm excitation. Notably, broadband 1.0 µm emission with a full width at half maximum (FWHM) of 96 nm was obtained in the phosphate glass doped with 2 mol.% Nd2O3 and 1 mol.% Yb2O3. In addition, the energy transfer microscopic parameter and transfer efficiency were analyzed. What is more, multimaterial fibers with Nd3+/Yb3+ co-doped phosphate glass core and silicate cladding were successfully drawn by using the molten core method. An intense 1.0 µm amplified spontaneous emission (ASE) can be realized in a 3 cm long multimaterial fiber. More importantly, the FWHM of the ASE can reach as large as 60 nm when excited at 976 nm. These results demonstrate that the Nd3+/Yb3+ co-doped phosphate glasses and fibers are promising gain materials for amplifier and laser applications in photonics.