Applications In Multifunctional Devices Research Articles

Barrier-free subwavelength multi-channel topological acoustic interlayer under direct resonance induction

In this paper, a new topological acoustic interlayer is proposed, which is formed by combining multi-order resonators in the form of the triangular lattice in the normal direction of the acoustic interlayer. Through the strong resonance of the resonator, the distribution of modes in the acoustic interlayer is directly induced to form a combination of modes with different topological states to support the subwavelength multi-channel lossless directional acoustic transmission in barrier-free space. Since there are no scatterers, not only can the required frequency band be directly achieved through the resonance frequency of the resonator alone, but also the background medium space in which the acoustic wave transmitting is a uniform medium, so the transmission is secret and the structure is ventilated. More importantly, there is more space in the normal direction of the barrier-free interlayer for design sub-wavelength multi-channel transmission. Furthermore, the random obstacles in interlayer do not affect the transmission under the pseudo spin modes. Finally, experimental verification is carried out. This research paves the way for the engineering application of multi-band acoustic antennas, covert communication, ventilated devices and other multi-functional devices, and will bring new enlightenment to the fields of elastic wave, light wave and electromagnetic wave.

Study on the magnetoelectric effect, ferroelectric and optical investigation of (1−x) BCT + x NZLFO multiferroic composite

AbstractThis study investigates the magnetoelectric coupling effect in dual‐phase multiferroic composites prepared using a solid‐state reaction method. The composites were fabricated with the formula (1−x)Ba₀.₇₇Ca₀.₂₃TiO₃(BCT) + xNi₀.₆Zn₀.₂₅La₀.₁₅Fe₂O₄(NZLFO), where x varied from 0% to 100% in 10% increments. Ca‐doped BaTiO₃ served as the ferroelectric phase, while La‐doped Ni–Zn ferrite acted as the ferromagnetic phase. The effects of varying ferrite content (x) on structural, optical, ferroelectric, electrical, and magnetoelectric properties were comprehensively analyzed. X‐ray diffraction (XRD) with Rietveld refinement revealed a spinel cubic structure for the ferrite phases and a tetragonal structure for the perovskite phases. The study observed a moderate influence of ferrite concentration on the lattice parameters of BCT and an opposing effect on the lattice parameters of NZLFO. Optical measurements indicated higher light absorption in the visible range compared to the UV region and wide optical bandgap. Magnetic properties, characterized by saturation magnetization, exhibited a dependence on temperature, with a Curie temperature (Tc) of 700 K. Electrical resistivity displayed a maximum at x = 50% and remained constant at high frequencies. The study also confirmed the presence of electric polarization induced by a magnetic field, with the highest magnetoelectric coefficient observed at x = 10%. These findings demonstrate the successful fabrication of dual‐phase multiferroic composites with tunable properties through controlled ferrite content. The observed magnetoelectric coupling suggests potential applications in multifunctional devices.

Flexible and Stretchable Thermoresponsive Display for Multifunctional Device Applications

Metal–organic frameworks (MOFs) have been recognized vastly as stimuli‐responsive materials owing to their extreme sensitivity toward the stimuli that make them flawless nominees for multifunctional device applications. However, MOFs are often oversensitive toward moisture, which significantly affects their stable responses and reproducibility. Herein, a MOF–polymer display (i.e., copper‐based MOF with polydimethylsiloxane) is developed that exhibits high sensitivity toward temperature changes without getting affected by moisture. In response to the thermal gradient, the display exhibits the change in color from sky blue to dark blue when the temperature varies from 30 to 100 ºC, which is attributed to the second‐order phase transition within the time interval 40 s and reversible in 60 s. To provide insights on the mechanism, ex situ UV–vis and temperature‐dependent operando X‐day diffraction are conducted, which unveils that the color change in the display is associated with reversible contraction/expansion of the unit cell parameters. In addition to that, the thermoresponse of the display remains unaffected under mechanical deformations, which indicates that the color display is mechanically and thermally stable. The as‐developed color display is mechanically robust and highly sensitive toward temperature change; it can be utilized as the color indicator in signaling temperature rise in smart mobiles or laptops during discharging to keep the user safe or applications in augmented intelligence.

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

In the realm of optoelectronic integration, silicon-based Ge bonding has attracted great attention due to its advantages in short-wave infrared response and low cost. However, owing to the inherent lattice mismatch and thermal mismatch between Ge and Si, the bonded Ge-Si heterogenous interfaces encountered problems of thermal instability and high interface states. Herein, an approach of separating the bonding interface from the heterogenous interface is proposed through inserting a Ge epitaxial layer (GeEL) between the Si substrate and Ge film. This separation modifies the bonding interface to a homogenous one, alleviating the massive mismatch stress and achieving film relaxation, enhancing bonding stability in all aspects. Moreover, during 850 °C annealing, GeEL is doped via diffusion hence realizes electric filed modulation, inhibiting the carrier recombination leakage current and trap assisted tunneling in this defect-rich layer. A Ge-Si heterogenous PIN diode prepared by this bonding method has achieved a remarkable low dark current density (1.33 mA/cm2), a low ideality factor (1.11), and a high on–off ratio (106), confirming the outstanding quality of the bonded heterojunction. This work provides great prospects for higher performance, larger scale and multi-functional Si-based heterogenous material device applications.

Manipulation of Charge Transport in MoS2/MoTe2 Field Effect Transistors and Heterostructure by Propagating the Surface Acoustic Wave.

Two-dimensional (2D) materials with atomic-scale thickness are promising candidates to develop next-generation electronic and optoelectronic devices with multiple functions due to their widely tunable physical properties by various stimuli. The surface acoustic wave (SAW) produced at the surface of the piezoelectrical substrate can generate electrical and strain fields simultaneously with micro/nanometer resolution during propagation. It provides a stable and wireless platform to manipulate the rich and fascinating properties of 2D materials. However, the interaction mechanisms between the SAW and 2D materials remain unclear, preventing further development and potential applications of SAW-integrated 2D devices. This work studied the acoustoelectric (AE) charge transport mechanism in 2D materials thoroughly by characterizing the performances of the n-type MoS2 and p-type MoTe2 field effect transistors (FETs) and the MoS2/MoTe2 p-n junction driven by the SAW. As compared to the case driven by the static electrical field alone, the SAW drove the electron and hole transport along the same direction as its propagation, and the generated AE current always had the opposite direction to the AE voltage. In the device level, the 2D FETs showed a significantly reduced subthreshold swing up to around 67% when the SAW was used to drive the channel carriers, indicating that the SAW enhanced the on/off switching speed. Moreover, the MoTe2/MoS2 p-n junction showed a tunable photoresponsivity by the power and propagation direction of the SAW. These findings provide a solid foundation to promote future research and potential applications of SAW-driven multifunctional devices based on 2D materials.

Tunable band alignment and optical properties in van der Waals heterostructures based on two-dimensional materials Janus-MoSSe and C3N4

Van der Waals heterostructures with tunable band alignments are the promising candidates for the fabrication of high-performance multifunctional nano-optoelectronic devices. In this work, we investigate the band alignments and optical properties of two-dimensional MoSSe/C3N4 and C3N4/MoSSe heterostructures using first-principles methods. The two most stable MoSSe/C3N4 (C3N4-Se) and C3N4/MoSSe (C3N4-S) heterostructures (labeled as A2 and B2, respectively) out of the twelve possible heterostructures are selected for the corresponding properties research. It is found that the A2 exhibits type-I band alignment, making it suitable for light-emitting applications, while the B2 exhibits typical type-II band alignment, which is favorable for carrier separation. Moreover, the band alignment of the two heterostructures can be modulated by the external electric fields, that is, band alignment transition between type-I and type-II. In addition, the main absorption peaks of both heterostructures in their pristine state are located in the visible light region (approximately 2.9 eV), and the peak values of the absorption peaks can be enhanced (weaken) via applying positive (negative) external electric fields. Our findings demonstrate that the C3N4/C3N4 and C3N4/MoSSe heterostructures hold significant potential for applications in multifunctional electronic devices including light-emitting, carrier separation, optical modulators, etc.

First-Principles Study on Evolution of Magnetic Domain in Two-Dimensional BaTiO3 Ultrathin Film Doped with Co under Electric Field.

The magnetization mechanism of Co-doped BaTiO3 ultrathin films is a subject of debate, which results in difficulties with the design of new multiferroics based on BaTiO3 matrixes. With the aid of a first-principles approach, it was observed that when the interstitial site and Ti vacancy were filled with Co, the configuration behaved in a nonmagnetic manner, indicating the significance of the Co content. Moreover, in the case of Co substituting two neighboring Ti atoms, when a direct current field was applied in the [100] direction, the magnetic domains excluding those in the [100], [010], and [001] directions were directed away. Further, the magnetoelectric constant was evaluated at ~449.3 mV/cmOe, showing strong magnetoelectric coupling at room temperature. Clearly, our study indicates that strict control of Ba, Ti, O, and Co stoichiometry can induce an electric and magnetic field conversion in two-dimensional BaTiO3 and may provide a new candidate for single-phase multiferroics for application in next-generation multifunctional devices.

Structure-Guided Approaches for Enhanced Spin-Splitting in Chiral Perovskite.

Hybrid organic-inorganic perovskites with diverse lattice structures and chemical composition provide an ideal material platform for novel functionalization, including chirality transfer. Chiral perovskites combine organic and inorganic sublattices, therefore encoding the structural asymmetry into the electronic structures and giving rise to the spin-splitting effect. From a structural chemistry perspective, the magnitude of the spin-splitting effect crucially depends on the noncovalent and electrostatic interaction within the chiral perovskite, which induces the local site and long-range bulk inversion symmetry breaking. In this regard, we systematically retrospect the structure-property relationships in chiral perovskite. Insight into the rational design of chiral perovskites based on molecular configuration, dimensionality, and chemical composition along with their effects on spin-splitting manifestation is presented. Lastly, challenges in purposeful material design and further integration into chiral perovskite-based spintronic devices are outlined. With an understanding of fundamental chemistry and physics, we believe that this Perspective will propel the application of multifunctional spintronic devices.

Metal oxide-mixed polymer-based hybrid electrochromic supercapacitor: improved efficiency and dual band switching

The inclusion of charge storage properties in electrochromic devices (ECDs) has gained much interest and has evolved into a promising emerging energy-related field due to multifunctional smart device applications. Here, an organic–inorganic solid-state asymmetric electrochromic supercapacitor device (ESCD) containing nano-CoTiO3-mixed poly-3-hexylthiophene and WO3 as two electrodes has been designed to study electrochromic and supercapacitor properties. The electrochemical properties of CoTiO3 show a pseudocapacitive-type charge storage capability, which has been utilized to enhance the electrochromic performance of the ESCD with additional charge storage ability. The device shows charge storage properties with fast charging and slow discharging, giving very high coulombic efficiency with a specific capacitance of 6.4 mF cm−2 at 0.2 mA cm−2 current density. The device shows excellent electrochromic supercapacitive properties with a color contrast of ∼50% and a short switching time of ∼1 s at a 515 nm wavelength with excellent cyclic stability. The device exhibits the capability to cut near infrared wavelength (700 nm and 850 nm) and has a potential application as a heat filtering device. Thus, the addition of pseudocapacitive-type materials in ECDs enhances the capacitive performance along with electrochromic properties, which makes ECDs more suitable for real life applications.

Robust type-III C3N/Ga2O3 van der Waals heterostructures

By combining two-dimensional (2D) materials with different band alignments at the contact interface, van der Waals heterostructures (vdWHs) can achieve multifunctional device applications. Here, through first principles methods, we constructed two C3N/Ga2O3 vdWHs named P↑ and P↓ because of the intrinsic polarization of Ga2O3 to study electronic, interfacial and optical characteristics. We find that the P↑ and P↓ both display a unique kind of band alignment known as broken-gap or type-III. This feature makes them highly suitable for tunnel field effect transistors (TFETs) applications. To the best of our knowledge, the tunnel window of the P↓ is the largest among the theoretical studies, reaching 0.993 eV. The electronic structure and band edge alignment of the C3N/Ga2O3 vdWHs show a weak dependence on strain engineering or external electric field. Normal-to-plane compressive strains effectively enhance the tunneling probability. We can acquire essential insights into this novel material system and its promise for future TFETs by analyzing the electrical characteristics of the C3N/Ga2O3 vdWHs.

Wavelength division multiplexing based on the coupling effect of helical edge states in two-dimensional dielectric photonic crystals.

Photonic topological insulators with topologically protected edge states featuring one-way, robustness and backscattering-immunity possess extraordinary abilities to steer and manipulate light. In this work, we construct a topological heterostructure (TH) consisting of a domain of nontrivial pseudospin-type topological photonic crystals (PCs) sandwiched between two domains of trivial PCs based on two-dimensional all-dielectric core-shell PCs in triangle lattice. We consider three THs with different number of layers in the middle nontrivial domain (i.e., one-layer, two-layer, three-layer) and demonstrate that the projected band diagrams of the three THs host interesting topological waveguide states (TWSs) with properties of one-way, large-area, broad-bandwidth and robustness due to coupling effect of the helical edge states associated with the two domain-wall interfaces. Moreover, taking advantage of the tunable bandgap between the TWSs by the layer number of the middle domain due to the coupling effect, a topological Y-splitter with functionality of wavelength division multiplexing is explicitly demonstrated exploiting the unique feature of the dispersion curves of TWSs in the three THs. Our work not only offers a new method to realize pseudospin-polarized large-area TWSs with tunable mode-width, but also could provide new opportunities for practical applications in on-chip multifunctional (i.e., wavelength division multiplexing) photonic devices with topological protection and information processing with pseudospin-dependent transport.

Photovoltaic and resistance switching properties of NiO/Pb0.92La0.08(Zr0.52Ti0.48)O3/LaNiO3

Due to its excellent ferroelectricity and photovoltaic effect (PE), Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) has considerable application potential in the field of multifunctional electronic devices. In this study, an Ag/NiO/PLZT/LaNiO3 structure is prepared on a Si substrate via a combination of sol–gel and pulsed laser deposition methods, and its ferroelectricity, PE and resistance switching (RS) properties are studied in detail. With decrease in temperature, coercive field of PLZT increases, and its residual polarization initially remains constant and then decreases. The results of ultraviolet-irradiation experiments show that the photogenerated open-circuit voltage (Vo) of PLZT first increases slightly and then decreases slightly as the temperature decreases. By changing the direction of PLZT polarization, the polarization field can be oriented in the same direction or opposite to the built-in electric field formed by p–n junction at NiO/PLZT interface. Thus, the total electric field required to drive the photogenerated carriers inside the structure can be tuned, which results in different Vo values. Furthermore, current–voltage characteristics of the structure are tested. It is found that as different polarization charges are generated at the NiO/PLZT interface for different PLZT polarization directions, the holes in NiO can be attracted or repelled by these polarization charges. Thereby, the interface barrier height of the p–n junction can be varied. Consequently, the structure exhibits a pronounced RS effect suitable for multilevel storage applications. These results represent an important experimental basis for the development and application of multifunctional electronic devices for optoelectronics and RS-based memories.

Broad/narrowband switchable terahertz absorber based on Dirac semimetal and strontium titanate for temperature sensing.

A broadband and narrowband switchable terahertz (THz) absorber based on a bulk Dirac semimetal (BDS) and strontium titanate (STO) is proposed. Narrowband and broadband absorption can be switched by adjusting the Fermi level of the BDS. When the Fermi level of the BDS is 100meV, the device is an absorber with three narrowband absorption peaks. The frequencies are 0.44, 0.86, and 1.96THz, respectively, when the temperature of STO is 250K. By adjusting the temperature of STO from 250 to 500K, the blue shifts of the frequencies are approximately 0.14, 0.32, and 0.60THz, respectively. The sensitivities of the three absorption peaks are 0.56, 1.27, and 2.38GHz/K, respectively. When the Fermi level of the BDS is adjusted from 100 to 30meV, the device can be switched to a broadband absorber with a bandwidth of 0.70THz. By adjusting the temperature of STO from 250 to 500K, the central frequency shifts from 1.40 to 1.79THz, and the bandwidth broadens from 0.70 to 0.96THz. The sensitivity of the central frequency is 1.57GHz/K. The absorber also has a wide range of potential applications in multifunctional tunable devices, such as temperature sensors, stealth equipment, and filters.

A superhard sp2–sp3 hybridized orthorhombic carbon allotrope with conductive property under extreme pressure

Superhard materials with conductive properties are extremely important. They have potential applications in multifunctional devices under extreme natural conditions. Here we present a superhard and conductive sp2–sp3 mixed hybrid carbon allotrope through Density functional theory calculations. The proposed carbon phase contains 36 atoms in an orthorhombic unit cell with Pmmm symmetry. In present structure (namely poC36), the sp2 bonds are wrapped around inside the sp3 bonded network. At 0 GPa it is dynamically stable and energetically more favourable than fullerene C60, graphene, Orth-C10, orth-C 10′ , oC36, C48, C20-sc, C21-sc, M-carbon, W-carbon etc. At 47.2 GPa pressure it is energy becomes lower than graphite. The Vickers hardness value is 76.32 GPa, which is higher than cubic boron nitride, the second hardest material. At 0 GPa it is an indirect band gap semi-conductor with band gap 0.08 eV. At around 11 GPa pressure, the valence band crosses the conduction band generating 1D conductivity in poC36. These, interesting features make poC36 a useful material for mechanical tools and electronic devices. The Raman spectra exhibits a diamond-like band, alongside graphite-like G and D bands, all of which undergo rightward shifts with increasing pressure, indicating structural changes. X-ray diffraction at 0 GPa resembles diamond, but at 47 GPa, four peaks vanish while six new ones emerge, signifying significant structural alterations under high pressure.

Study on the piezoelectric properties and the mechanism of strain-regulated piezoelectricity in flexible Janus monolayers Cr2X3Y3 (X/Y = Cl, Br, I)

Piezoelectric materials hold significant promise in piezoelectric electronics and piezoelectric optoelectronics. As a new member of this family, the 2D Janus structures characterized by central symmetry breaking have attracted much attention due to the out-of-plane piezoelectric effects. In this work, the mechanical, piezoelectric properties, and the strain regulation mechanism of Juans structure material (Cr2X3Y3, X/Y = Cl, Br, I) are systematically investigated by the first-principles methods. The calculated mechanical properties show that Cr2X3Y3 with a lower Young’s modulus of 27.31∼29.76 N m−1 is more sensitive to applied stresses, theoretically exhibiting exceptional piezoelectric properties. The in-plane piezoelectric coefficients d 11 for Cr2Br3Cl3, Cr2I3Cl3, and Cr2I3Br3 are 4.92, 9.89, and 7.86 pm V−1, respectively; the out-of-plane piezoelectric coefficients d 31 are 1.13, 2.33, and 1.64 pm V−1, respectively. Cr2I3Cl3 has the highest values of d 11 and d 31 due to the large electronegativity difference between iodine and chlorine atoms. Based on the analysis, it can be deduced that Cr2X3Y3 demonstrates substantial piezoelectric responses in both in- and out-of-plane, with potential strain regulation effects. The d 31 values of Cr2I3Cl3 show an approximately linear relationship to strain in the range from −2% to 4% and remain consistently above 2.10 pm V−1 across a broader range of strain from −4% to 6%, underscoring its robustness to strain. Our study indicates that two-dimensional Janus Cr2X3Y3 monolayers would emerge as promising candidates for diverse applications in multifunctional electronic devices.

Intercross-linked aramid nanofibers/graphene hybrid films toward high mechanical strength and electrical conductivity

Although macro graphene films exhibit excellent electrical conductivity, the low tensile strength severely hampers the application of graphene films. Combined with polymers can improve the mechanical properties to a degree, but it usually dramatically decreases the electrical conductivities of graphene films. It is thus a great challenge to make a trade-off between high electrical conductivity and excellent mechanical properties of graphene films. Herein, we designed a homogeneous layer-by-layer microstructure combining reduced graphene oxide (rGO) nanosheets with aramid nanofiber (ANF) to obtain composite films referred to as rGO/ANF. By tuning the concentration of ANF, a balanced electrical and mechanical performance can be achieved. It is revealed that the tensile strength of the optimized composite film with 10 wt% ANF was dramatically improved by 194% comparing to the pure rGO film, and the electrical conductivity still maintained at a relatively high level (8495 S m−1). The remarkable overall properties can be attributed to the unique structure with abundant hydrogen bonds and π-π interactions formed between rGO and ANF. The results demonstrate that this is indeed an efficient strategy to balance the electrical conductivity and tensile strength of the graphene-polymer composites, making it promising in the application of multi-functional electronic devices.

Nonsaturating Linear Magnetoresistance Manifesting Two-Dimensional Transport in Wet-Chemical Patternable Bi2O2Te Thin Films.

Two-dimensional (2D) materials with exotic transport behaviors have attracted extensive interest in microelectronics and condensed matter physics, while scaled-up 2D thin films compatible with the efficient wet-chemical etching process represent realistic advancement toward new-generation integrated functional devices. Here, thickness-controllable growth and chemical patterning of high-quality Bi2O2Te continuous films are demonstrated. Noticeably, except for an ultrahigh mobility (∼45074 cm2 V-1 s-1 at 2 K) and obvious Shubnikov-de Hass quantum oscillations, a 2D transport channel and large linear magnetoresistance are revealed in the patterned Bi2O2Te films. Investigation implies that the linear magnetoresistance correlates with the inhomogeneity described by P. B. Littlewood's theory and EMT-RRN theory developed recently. These results not only reveal the nonsaturating linear magnetoresistance in high-quality Bi2O2Te but shed light on understanding the corresponding physical origin of linear magnetoresistance in 2D high-mobility semiconductors and providing a pathway for the potential application in multifunctional electronic devices.

Direction control of electromagnetic beam scattering by physically stacked cascaded coding metasurfaces

Coded metasurfaces build a bridge between the physical world and digital worlds, making it possible to manipulate electromagnetic waves and implement programmable metamaterials through digitally coded sequences. This “digital metasurface” based on binary digital logic greatly simplifies the design process of the metasurface and improves the flexibility of regulating electromagnetic waves. Based on the principle of Fourier convolution addition, a physical superposition cascaded metasurface is designed. The metasurface unit consists of three dielectric substrates and four “H”-shaped copper metal patch boards. The addition of most coding metasurfaces is to add two basic coding metasurfaces through the addition rules between digital codes to obtain a new coding sequence, and the new coding sequence has the characteristics of the previous two coding sequences. We propose a physically superimposed cascaded encoding metasurface. By physically superposing two different sequences of metasurfaces, the cascaded metasurface formed after superposition also has the characteristics of the first two basic coding sequences. We experimentally verified the proposed idea using two different dielectric materials, and there was good consistency between the experiment and simulation, thereby verifying the consistency of the metasurface cascade and the phase-encoding element surface addition principle. This design approach has potential applications in multifunctional photonic devices.

Mn dopant-enabled BiFeO3 with enhanced magnetic and photoelectric properties

In this study, BiFe1−XMnXO3 (BFMXO, x = 0, 0.03, 0.05, 0.07, 0.10, and 0.15) nanoparticles were synthesized using the sol-gel technique. The XRD patterns confirm that the BFMXO nanoparticles exhibit a rhombic structure with the addition of Mn dopant, while structural distortion occurred as the doping concentration increased. In particular, Mn doping effectively induced lattice shrinkage and enhanced the lattice strain. The SEM and TEM images showed increased uniformity and grain size reduction as Mn doping concentration increased. The XPS spectra show that the conversion of Fe2+ to Fe3+ leads to the increase of oxygen vacancy concentration. Further, the M−H loops show that the saturation magnetization and residual magnetization of all Mn-doped samples were successfully improved with the gradual transformation from antiferromagnetism to ferromagnetism. Therefore, BiFe0.93Mn0.07O3 reached a maximum Ms and Mr of approximately 0.956 and 0.054 emu/g, respectively. Further, BiFe0.93Mn0.07O3 exhibited 4–5 times higher photoconductivity than the pristine sample. First-principles calculations further accounted for the improved magnetic and electrical properties of BFMXO induced by the Mn dopant. This study demonstrates an effective method for controlling the structure and characteristics of BFO-based nanomaterials for multifunctional device applications.

Room-Temperature, Nanoscale Multiferroic Pb(Fe0.5Ta0.5)1−x(Zr0.53Ti0.47)xO3 (x = 0.2, 0.3) Thin Films Grown via the Pulsed Laser Deposition Technique

Multiferroic materials capable of robust magnetoelectric coupling at room temperature are currently being explored for their possible multifunctional device applications. Highly (100)-oriented Pb(Fe0.5Ta0.5)x(Zr0.53Ti0.47)1−x (PZTFTx) thin films (x = 0.2 and 0.3) with a thickness of about 300 nm were grown on La0.67Sr0.33CoO3 (LSCO)-buffered MgO 100-oriented substrates via the pulsed laser deposition method. An analysis of their X-ray diffraction patterns suggests the stabilization of the orthorhombic phase in the thin films at room temperature. Dielectric spectroscopic measurements of the metal–insulator–metal (Pt/PZTFTx/LSCO) thin-film capacitors as a function of temperature revealed a diffuse ferroelectric-to-paraelectric phase transition around Tm ~520 and 560 K for the x = 0.2 and 0.3 thin films, respectively. Well-saturated electrical hysteresis loops with large remanent (Pr) and saturation (Ps) polarizations were observed in these capacitors, which indicates the establishment of intrinsic ferroelectric ordering in the thin films at room temperature. These thin films retained ferromagnetic/ferrimagnetic ordering up to 300 K and showed saturation magnetization values of 8.3 (x = 0.2) and 6.1 (x = 0.3) emu/cm3 at room temperature. The magnetoelectric coupling constants of 2040 mV/cmOe (x = 0.2) and 850 mV/cmOe (x = 0.3), respectively, were obtained at an in-plane bias field at room temperature. The present study demonstrates that PZTFTx thin films are multiferroic at room temperature with large magnetoelectric couplings, and these materials may be suitable for use in magnetic sensors and spintronic device applications.