Abstract The need for the replacement of cadmium, indium, and tellurium in their compounds for sensor applications is a novel study. The Cu2ZnSnS4 thin films were synthesized from Cu (99.99%), Sn (99.99%), and Zn (99.99%) using thermal evaporation method. The same volumetric parameters were maintained throughout the synthesis process. The films were further irradiated using an isotope of cesium-137 from a gamma source at different doses (0–0.6 kGy) and dose rates of 0.1007 kGy/hr at room temperature. Both the pristine and irradiated films were characterized with Raman spectroscopy, field emission scanning electron microscope (FESEM), energy dispersive X-rays (EDX), UV-Vis spectroscopy, and four-point probe techniques. The Raman results confirmed that all the films for both pristine and irradiated films have a main and secondary phases. The EDX results showed the pristine and 0.1 kGy films were Cu-rich film, while the 0.3 kGy and 0.6 kGy films turned out to be Zn-rich films with an increase in gamma dose. The optical property of all the films showed that the band gap decreased from 1.6 eV to 1.48 eV for the pristine and irradiated films. While the electrical resistivity results decreased after irradiation dose. The structural, optical, and electrical properties results responded linearly with the increasing gamma radiation dose, which suggested the possibility of using films as a new solid-state sensor to replace CdTe and CIGS thin films.
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