Phase Change Memory Applications Research Articles

Electrical properties and conduction mechanisms of ε-GaSe films for selector and phase-change memory applications

Owing to the pressing requirement for advanced memory solutions driven by explosive data growth, nonvolatile and fast-operating 1S1R structured XPoint memory has become a prominent focus, with recent interest shifting towards the 1S structured selector-only memory. The use of chalcogenide-based materials in these technologies constrains the application of such memories because of their complex quaternary compositions. This study investigated the previously unreported potential of GaSe, a simple binary Se-based chalcogenide, for applications as a selector and phase-change memory (PCM). In this study, ε-GaSe thin films were deposited using thermal evaporation and subsequently annealed in a Se atmosphere for 1 and 2 h. These ε-GaSe thin film devices incorporated metal–insulator–metal construction to exhibit both selector and PCM characteristics. The ε-GaSe device that was Se-annealed for 1 h demonstrated superior performance with a lower threshold voltage and off current, high selectivity as a selector, and reduced set voltage and reset power as a PCM. These characteristics render the proposed device a highly promising candidate for dual selector/PCM applications. To explain the electrical behavior of the ε-GaSe device, we propose the conduction mechanism model depending on the Se-annealing time, which is related to the change in the physical properties of ε-GaSe.

Unveiling the boson peaks in amorphous phase-change materials

The Boson peak is a universal phenomenon in amorphous solids. It can be observed as an anomalous contribution to the low-temperature heat capacity over the Debye model. Amorphous phase-change materials (PCMs) such as Ge-Sb-Te are a family of poor glass formers with fast crystallization kinetics, being of interest for phase-change memory applications. So far, whether Boson peaks exist in PCMs is unknown and, if they do, their relevance to PCM properties is unclear. Here, we investigate the thermodynamic properties of the pseudo-binary compositions on the tie-line between Ge15Te85and Ge15Sb85from a few Kelvins to the liquidus temperatures. Our results demonstrate the evidence of the pronounced Boson peaks in heat capacity below 10 K in the amorphous phase of all compositions. By fitting the data using the Debye model combined with a modification of the Einstein model, we can extract the characteristic parameters of the Boson peaks and attribute their origin to the excess vibrational modes of dynamic defects in the amorphous solids. We find that these parameters correlate almost linearly with the Sb-content of the alloys, despite the nonmonotonic behaviors in glass forming abilities and thermal stabilities. In a broader context, we show that the correlations of the characteristic parameters of the Boson peaks with Tg and kinetic fragility, vary according to the type of bonding. Specifically, metallic glasses and conventional covalent glasses exhibit distinct patterns of dependence, whereas PCMs manifest characteristics that lie in between. A deeper understanding of the Boson peaks in PCMs holds the promise to enable predictions of material properties at higher temperatures based on features observed in low-temperature heat capacity.

Special kinetics features of scandium antimonide thin films conducive to swiftly embedded phase-change memory applications

Special kinetics features of scandium antimonide thin films conducive to swiftly embedded phase-change memory applications

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-edge applications, including non-volatile memory, neuromorphic computing, and nano-photonics. However, for embedded phase-change memory applications, conventional PCMs suffer from insufficient thermal stability because of their relatively low crystallization temperatures (Tx). Although doping with additional alloying elements could improve the amorphous stability, it also increases the tendency towards compositional partitioning and phase separation. Recently, a two-dimensional (2D) layered compound CrGeTe3 (CrGT) was developed as a PCM, showing a high Tx ~ 276 °C with an inverse change in resistive-switching character upon phase transition. Here, we report a high-throughput materials screening for 2D layered phase-change chalcogenides. We aim to clarify whether the high Tx and the inverse electrical resistance contrast are intrinsic features of 2D PCMs. In total, twenty-five 2D chalcogenides with CrGT trilayer structures have been identified from a large database. We then focused on selected layered tellurides by performing thorough ab initio simulations and experimental investigations and confirming that their amorphous phase indeed has a much higher Tx than conventional PCMs. We attribute this enhanced amorphous stability to the structurally complex nuclei required to render crystallization possible. Overall, we regard InGeTe3 as a balanced 2D PCM with both high thermal stability and large electrical contrast for embedded memory applications.

Influence of HfO2 oxide layer on crystallization properties of In3SbTe2 phase change material

Phase Change Memory (PCM) represents a potential paradigm in the realm of non-volatile memory technologies, and several phase change materials are studied for utilization in PCM devices. This work employs a less explored In3SbTe2 (IST) phase change material (active layer) integrated with an oxide (HfO2) layer and investigates the influence of the oxide layer on the active layer. The oxide layer remains amorphous when annealed at 400 °C, and it doesn’t alter the crystallization temperature (290 °C) of the active layer in IST with HfO2 thin-film. However, after crystallization, the grain size of the active layer is reduced to ∼8.23 nm in IST with HfO2 thin-film, compared to only IST thin-film. XPS core-level spectra (In 3d, Sb 3d, Te 3d) of IST active layer reveal the peak shifting towards higher binding energy at 300 °C and 400 °C annealed films, implying bond energy increase with crystallization and film stability improves. The Hf or O atoms of the oxide layer don’t diffuse into the active layer with annealing, suggesting no interference with the phase switching property of IST. A higher optical bandgap of 1.154 eV in as-deposited IST with HfO2 thin-film compared to the only IST thin-film illustrates better stability of the amorphous state in the film with the oxide layer. In addition, the fabricated PCM device using the IST with the oxide layer demonstrates phase switching at a lower threshold voltage of (2.1 ± 0.1) V, compared to the IST-based device. The findings indicate that the enhanced structural and electrical switching characteristics of IST phase change layer coupled with an oxide layer make it beneficial for data storage PCM applications.

Effect of Ultraviolet Radiation on Properties of Ge2Sb2Te5 Phase Change Films.

With the expanding utilization of space technology, the stability of electronic components' performance in radiation environments has garnered significant attention. In this study, we prepared Ge2Sb2Te5 phase change films and memory units on silicon substrates to explore the influence of ultraviolet (UV) radiation on their characteristics. The experimental findings revealed that UV irradiation at a power density of 450 mW/cm2 decreased the amorphous resistance and thermal stability of Ge2Sb2Te5 films, impeding their multistage storage performance. Nevertheless, the amorphous state could still undergo effective transformation into a crystalline state. Furthermore, UV irradiation triggered the photoelectric effect, narrowing the band gap and causing a redshift of the Raman peak in amorphous films. Remarkably, the surface properties of Ge2Sb2Te5 films remained unchanged under irradiation. The phase change memory device based on Ge2Sb2Te5 film retained its SET-RESET conversion capability at a pulse width of 100 ns post-UV irradiation, demonstrating resilience against UV radiation. This study offers the practical insights for the application of phase change memory in space radiation environments.

650 ps SET speed in Ge2Sb2Te5 phase change memory induced by TiO2 dielectric crystal plane

AbstractCrystallization speed of phase change material is one of the main obstacles for the application of phase change memory (PCM) as storage class memory in computing systems, which requires the combination of nonvolatility with ultra‐fast operation speed in nanoseconds. Here, we propose a novel approach to speed up crystallization process of the only commercial phase change chalcogenide Ge2Sb2Te5 (GST). By employing TiO2 as the dielectric layer in phase change device, operation speed of 650 ps has been achieved, which is the fastest among existing representative PCM, and is comparable to the programing speed of commercial dynamic random access memory (DRAM). Because of its octahedral atomic configuration, TiO2 can provide nucleation interfaces for GST, thus facilitating the crystal growth at the determinate interface area. Ti–O–Ti–O four‐fold rings on the (110) plane of tetragonal TiO2 is critical for the fast‐atomic rearrangement in the amorphous matrix of GST that enables ultra‐fast operation speed. The significant improvement of operation speed in PCM through incorporating standard dielectric material TiO2 in DRAM paves the way for the application of phase change memory in high performance cache‐type data storage.image

Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for phase change memory applications

Chalcogenide alloy-based semiconductors have gained significant attention in recent decades due to its applications in phase change memory (PCM). Sb2Te3 has proven to be an alternative to Static and Dynamic Random Access Memory and can be a suitable candidate for commercial memory devices due to their fast switching speed. However, Sb2Te3 suffers from low amorphous phase stability and high RESET current, which needs further improvement for high power efficiency. In this work, we have prepared (Sb2Te3)1−x (GeSe2) x (x = 0.06, 0.12, 0.18, 0.24, 0.3) films to investigate their PCM properties. The films showed a rise in transition temperature to transform from high resistive amorphous (RESET) to low resistive crystalline (SET) states with doping that leads to significant enhancement in amorphous phase stability. For 30% doping of GeSe2 in Sb2Te3, the data retention temperature increases from 20.2 °C to 84.6 °C, and the resistance contrast also increases from 102 to 105. The rise in electrical resistance with doping in the amorphous as well as crystalline states leads to a drop in threshold current (I th) from 3.5 to 0.8 mA. This also reduces the RESET and SET currents. By analyzing the samples using finite element method, it was found out that the high resistance materials produce more heat, resulting in a lower write current in an energy efficient PCM device.

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Quaternary (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass was synthesized using melt-quenching and thermal evaporation techniques for bulk and thin film samples, and its amorphous character was confirmed by XRD. Based on different models of non-isothermal crystallization kinetics, the average values of the glass transition and the crystallization activation energies are 121.33 and 82.94 kJ mol−1, respectively. The crystallization mechanism in the examined composition is 2D nucleation growth, according to Avrami exponent Thermal parameters of the studied quaternary glass, like fragility fluctuation free volume reduced glass transition temperature thermal stability and glass formation ability were investigated and indicated that the (Tl20Se70Ge10)0.85Sb0.15 ChG exhibits a good ability of glass formation and thermal stability. The obtained results of the dc electrical conductivity are found to increase with temperature and decrease with film thickness. The electrical conduction activation energy (0.583 ± 0.004 eV) is thickness independent and the predominant conduction mechanism is the hopping of charge carriers in the band tail localized states. The () curves of (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass film samples were analyzed and shown to be appropriate for a memory switch. The mean value of the threshold voltage decreases exponentially as temperature increases, whereas it increases linearly as film thickness increases. The values of threshold voltage and threshold resistance activation energies are 0.282 ± 0.003 and 0.521 ± 0.004 eV, respectively. The obtained switching characteristics data were discussed in view of the electrothermal model motivated by current channel Joule heating. These findings highlight the suitability of the investigated composition for various optoelectronic applications, such as memory switching devices, optical data storage, phase-change memories and optical fibres sensing devices.

Calorimetric studies of yttrium doped non-conventional phase-change materials for improved performance

Though phase-change materials (PCMs) are regarded as constituent part of next-generation phase-change memory and other unfolding optoelectronic applications, the kinetics study of glass transition and crystallization, significant property in switching remains obscure in high-temperature region. Hence, this paper reports the investigation of glass transition and crystallization kinetics of Te(1-x) (GeSe0.5)Yx (TGSY) chalcogenide glass using differential scanning calorimetry (DSC) at heating rates 5, 10, 15, 20 °C/min. The effect of increasing Y quantity has been described by connecting structural relaxation kinematics during glass transition phenomena and devitrification while crystallization in chalcogenide glasses with their varied physicochemical characteristics. The inclusion of Y causes a discernible rise in the crystallization rate. The system is compatible with a strong glass-forming liquid, according to the Te(1-x) (GeSe0.5) Yx material fragility index. According to the average values of the kinetic exponent factors, there is heterogeneous nucleation for the investigated composition, which is subsequently followed by a two- or three-dimensional crystal growth phenomenon. Different glass stability criteria have been discussed based on the relationship between the characteristic temperatures. The CZW and CLX criteria were found to be inappropriate for discussing glass stability (GS) for the studied compositions based on the heating rate and composition dependencies of all criteria. The CYL criteria of Yuan et al. is the finest and it demonstrates the optimal ability for evaluating the GS, according to the data that was extracted from several GS criteria and their relative change parameters. By adding Y, thermal stability parameter and enthalpy emitted during the transition of glass and crystalline phases have been found to have an inverse relationship. All studied properties can conclude the application of studied material in phase-change material devices.

The role of arsenic in the operation of sulfur-based electrical threshold switches

Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the latter. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are key units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of As into GeS brings >100 °C increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, which reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a back-end-of-line-compatible OTS selector with >12 MA/cm2 on-current, ~10 ns speed, and a lifetime approaching 1010 cycles after 450 °C annealing. These findings allow the precise performance control of GeSAs-based OTS materials for high-density 3D PCM applications.

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

Ovonic threshold switching selectors are widely studied owing to the essential application in high density phase-change memory. Amorphous GeS is proposed as a potential candidate for the excellent performance. However, the knowledge of amorphous GeS is still insufficient up to date. Here, we have studied the structure and electronic characteristics of GeS in the amorphization process, by using ab initio molecular dynamics simulations. The results indicate that the amorphous GeS is mainly made up of Ge–S bonds. The Ge- and S-centered clusters are dominantly in the form of octahedral structures in liquid GeS. During the amorphization process, most of Ge-centered clusters become highly coordinated octahedrons while a small number of Ge-centered clusters change to tetrahedrons, and the S-centered clusters deviate from the octahedral structure gradually. In addition, the large bandgap and the relatively small mid-gap states in amorphous GeS lead to a high switching voltage.

Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching

In phase-change random access memory (PCRAM) applications, the germanium antimony tellurium alloy (GST) is patterned using halogen etching in inductively coupled plasma reactors. This paper focuses on the surface state evolution of an optimized Ge-rich GST material after plasma etching. Four hours after etching, big dome-shaped residues are observed on PCRAM structures. Their number and size increase with the time of air exposure. X-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy analyses reveal an important germanium oxidation on the surface with residues. Their formation is then investigated. Complementary analyses highlight that the moisture environment has a catalytic effect on the residue formation. Based on this study, a detailed mechanism responsible for residue formation is proposed.

Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application

Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application

Van der Waals epitaxy of pulsed laser deposited antimony thin films on lattice-matched and amorphous substrates

Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and two-dimensional materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous substrates using pulsed laser deposition. C-axis out-of-plane textured Sb thin films were successfully deposited on Sb2Te3 and SiO2/Si3N4 substrates. In the case of growth on Sb2Te3, we show that an intermediate phase is formed at the Sb2Te3–Sb interface playing a crucial role in forming a solid coupling and thus maintaining epitaxy leading to the production of high-quality Sb thin films. A 3–4 nm amorphous Sb seed layer was used to induce texture and suitable surface termination for the growth of Sb thin films on amorphous substrates. The deposition parameters were fine-tuned, and the growth was monitored in situ by reflection high energy electron diffraction. Scanning/transmission electron microscopy unveiled the local structure of produced films showing the formation of ꞵ-phase Sb thin films. Our results demonstrate the feasibility to produce very smooth high-quality antimony thin films with uniform coverage, from few layers to large thicknesses, using pulsed laser deposition. We believe the results of our work on scalable and controllable Sb growth have the potential to open up research on phase change materials and optoelectronics research.

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Balancing operation speed and thermal stability is a big challenge in phase change memory (PCM). In this work, a carbon (C) and chromium (Cr) co-doped Sb2Te strategy has been proposed for achieving high operation speed and high stability in PCM applications. In general, doping with the appropriate Cr element is beneficial to improve thermal stability, but it will sacrifice its operation speed. C-doping can enhance thermal stability and retain its fast phase transition properties due to the carbon elements tend to form agglomerates in the host that ameliorate disorder of the amorphous phase without loss of the phase transition rate. Intriguingly, the as-prepared C1.19Cr0.23Sb2Te material exhibits good data retention (T10-year @ 155.0 °C) and low-volume change rate (1.8%), as well as fast switching speed (4 ns) and good endurance (>1 × 105 cycles). This research indicates that C and Cr co-doping is an effective method to achieve excellent stability of phase-change materials without sacrificing the phase-transition rate of Sb2Te materials.

Successive crystallization in indium selenide thin films for multi-level phase-change memory

Increasing the storage density of phase-change memory is a challenging subject towards the universal memory commercialization. Multi-level data storage can be implemented in phase-change memory cells by designing multiple stages of crystallization of phase-change materials, which is favorable to push forward the application of phase-change memory in storage-class memory and the emerging in-memory computing. Here, the structure and properties of In2Se3 phase-change thin films with multi-level phase transitions are investigated. The In2Se3 thin films changes resistance states twice upon heating with high crystallization temperature and good thermal stability. The amorphous In2Se3 thin films undergo partial crystallization of the Se phase followed by crystallization of the γ-In2Se3 phase, with successive stages of crystallization accounting for the three distinct levels of resistivity. The phase-change memory cell based on In2Se3 thin films shows a continuous switching process of high resistance state, intermediate resistance state and low resistance state with low drift coefficient in SET-RESET operations at a speed as fast as 60 ns, and the RESET power is as low as 311 pJ, indicating that the In2Se3 thin films have good performance of three-state storage property and can effectively improve the memory density.

Graphite Carbon-Doped Sb2Te Nanostructures for Phase-Change Memory Applications

High thermal stability, fast operation speed, low thickness variation, and low resistance drift of phase-change nanomaterials are the essential characteristics in phase-change memory (PCM) applications. In this work, we put forward a graphite carbon-doped Sb2Te (C-Sb2Te) chalcogenide with semiconductor process compatibility. Our results prove that the proposed C-Sb2Te has excellent thermal stability and high operation speed. More importantly, the thickness change and resistance drift are only 0.89% and 0.0149, respectively. The C-Sb2Te-based memory device exhibits a high switching speed to the instrument test limit (5 ns) with a large resistance ratio, low operation voltage (2 V), and low power consumption (6.9 pJ). The proposed C-Sb2Te nanostructure material exceeds both conventional Ge2Sb2Te5 and transition-metal-doped Sb2Te materials in terms of its performance. Ab initio molecular dynamics simulations reveal that C–C and C–Sb bonds as well as C–C chains are formed in C-Sb2Te, and C doping constrains phase transition in a small region and refines grains of C-Sb2Te, thus resulting in the high performance. Our study suggests that C-Sb2Te is a potential candidate for high-speed, high-thermal-stability, and high-reliability PCM applications.

GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy

We designed the phase-change memory (PCM) cell based on ultrathin GeTe film (∼10 nm) and homemade nanoscale electrode filling craft to improve data retention ability and reduce programming energy, respectively. It was found that the temperature for ten years’ data retention of this ultrathin GeTe film is 160 ± 32.8 °C, which is much higher than that of conventional Ge2Sb2Te5 (GST, 83 ± 20.6 °C) film. Benefit to the nature of fragile-to-strong crossover behavior in GeTe supercooled liquids that was confined in a two-dimension structure, a fast SET speed of 6 ns is also detected in this ultrathin GeTe PCM. Moreover, the RESET power consumption of this ultrathin GeTe PCM is measured as 1.8 ± 0.5 nJ, and it is much lower than that of GST PCM (16.5 ± 1.5 nJ), which is attributed to the nanoscale electrode of the devices. The above-mentioned improvements enable the application of ultrathin GeTe PCM in neuromorphic computing.

Study on Texture Formation of Sb2Te Thin Films for Phase Change Memory Applications

We investigated the texture formation of Sb2Te thin films for phase change memory applications. The Sb2Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb2Te thin films were annealed at various temperatures and times. The texture characterization was performed by using X-ray diffraction (XRD) and electron backscatter diffraction (EBSD). Experimental results show that the annealed Sb2Te thin films exhibit the 112¯0 and 101¯0 prismatic texture. The formation of prismatic texture is induced by the lattice strain, surface energy, and coarse grains, in which the lattice strain is the essential origin of prismatic preference. Electronic transport properties of Sb2Te thin films were monitored by a physical property measurement system (PPMS). It was found that the formation of prismatic texture promotes the increase of carrier mobility. The stability of the film–substrate interface was also assessed by calculating mismatch. The prismatic-preferred Sb2Te thin films exhibit higher mismatch with a silicon wafer, reducing the interface stability.