In this work, amorphous Ge1-xCx films were deposited on As40Se60 chalcogenide glass by radio frequency magnetron co-sputtering (rf MS) under low temperature. The deposition temperature rise, the structural, mechanical and optical properties of Ge1-xCx films as a function of sputtering power was investigated by thermocouple, X-ray photoelectron spectroscopy (XPS), Raman Spectroscopy, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transformed Infrared Spectroscopy, Surface Profiler, Continuous Stiffness Measurement (CSM) and Environmental Testing Equipment. All the deposition temperature rise of Ge1-xCx films generated from radical ions and neutrals decomposed with different sputtering power are mild (<75 °C) and much lower than the transition temperature of As40Se60 chalcogenide glass (185 ± 5 °C). The results reveal that CGe sp3 hybridization structure decrease, olefinic chains and nc-graphite clusters are transformed to fused aromatic rings, the disorder state and CC sp3 hybridization structure of amorphous carbon phase increase as sputtering power increases from 50 W to 450 W. Ge atoms are strong nucleation sites for the transformation of olefinic chains and nc-graphite to fused aromatic rings, whereas, highly hydrogenated olefinic chains can inhibit this nucleation function. The nanohardness of Ge1-xCx films increases from 4.1 GPa to 12.1 GPa, residual stress of Ge1-xCx films transforms from tensile stress to compressive stress, refractive index of Ge1-xCx films increases from 2.1 (150 W) to 3.1 (450 W) as sputtering power increases from 50 W to 450 W. Ge1-xCx film (150 W) with tensile stress was used as transition layer, consisting of Ge1-xCx/ Diamond-like Carbon (DLC) double protective antireflective film, which shows excellent adhesion and environmental durability on the surface of As40Se60 chalcogenide glass. The average infrared transmittance and nanohardness of As40Se60 chalcogenide glass are promoted from 62.2% to 72.6% (3 μm ~ 5 μm) and 1.9 GPa to 7.8 GPa, respectively.