Layer Antireflection Coatings Research Articles

Simulation of a Silicon Solar Cell Using Triple-Layer Anti-Reflection Coatings (ARC)

Considering solar energy is being used more and more frequently in recent years, numerous studies have been conducted in order to improve the performance of the solar cell. The application of anti-reflective coating (ARC) in the solar cell is one of the most effective techniques. It has been said that although single and double ARC layers are adequate, applying triple ARC layers would render them significantly more effective across a broad spectrum. Henceforth, in this study, different materials were recently designed to produce triple layers of ARC, which are SiO2/Si3N4/TiO2, SiO2/ZnO/TiO2, ZnO/Si3N4/TiO2, SiO2/Si3N4/ZnS, and SiO2/ZnO/ZnS, which are then applied in silicon solar cells using PC1D simulation software. The outcomes of the simulation included the analysis of the I-V curve, efficiency (ŋ), and reflection, in addition to the results for short circuit current (Isc), maximum power output (Pmax), open circuit voltage (Voc), and fill factor (FF), which have been compared to numerous other theoretical findings from other investigations and research projects. By that, the simulation revealed that SiO2/ZnO/TiO2 is the most suitable triple-layer ARC to be applied to a silicon solar cell, which exhibits the highest efficiency of 22.63% with an Isc of 3.967A, Pmax of 2.489W, a Voc of 0.7389V, and a fill factor of 84.91 at a wavelength of 400 nm.

Exploring low temperature-sputtered indium tin oxide (ITO) as an anti-reflection layer for silicon solar cells

Abstract This paper tackles challenges in silicon (Si) solar cells, specifically the use of hazardous Phosphorus Oxychloride (POCl3) for emitter formation and silane/ammonia for the Anti-Reflective Coating (ARC) layer, accompanied by high-temperature metallization. The study proposes an eco-friendly ARC layer process, replacing toxic materials. Indium Tin Oxide (ITO) with a refractive index of ∼2.0 is suggested as a non-toxic substitute for SiN x in the ARC layer. ITO enables fine-tuning of optical parameters and, with its electrical properties, supports low-resistivity contacts through efficient, low-temperature metallization processes. ITO-passivated solar cells with Ag polymer paste as a front contact exhibit promising characteristics: a commendable photocurrent density (J sc) of 20 mA cm−2 at 850 °C, low series resistance (R s) of 1.9 Ω, and high shunt resistance (R shunt) of 28.9 Ω, as demonstrated by illuminated I–V measurements. Implementing ITO as the ARC on a less toxic emitter junction enhances Si solar cells’ current density gain, minimizing current leakage during high-temperature processing. In conclusion, adopting less toxic materials and employing low-temperature processing in passive silicon solar cell fabrication presents an attractive alternative for cost reduction and contributes to environmentally sustainable practices in green manufacturing.

Growth rate of AL2O3 Thin Film by Liquid Phase Deposition as an Anti-reflection Coating Layer on Crystalline Silicon for Solar Cell Applications

The fabrication of photovoltaic (PV) device requires that surface reflectance of solar cells has to be minimized to achieve higher photo-conversion efficiency (PCE). Antireflection coating layer is deposited on the surface of a p-type crystalline silicon material to reduce the surface reflections of solar radiation and increase its absorption for efficient solar cell application. In this work, aluminum oxide thin film by liquid phase deposition (LPD-Al2O­3) is synthesized from combined solution of aluminum sulfate octadecahydrate (Al2(SO4)3·18H2­O) and sodium carbonate (NaHCO3) with pH of 3.1. Some samples of p-type (100) crystalline silicon (c-Si) wafers of resistivity 1 – 10 mΩ were immersed inside the growth liquid of LPD-Al2O­3 thin film for 1hr – 2.5 hours. This is followed by annealing the samples at a temperature of 450oC, the deposition rate is faster in the range 1 – 1.5 hours is about 35nm/hr. As the growth time increases, the growth rate of the film decreases and remains nearly constant at about 10 nm/hour at 1 – 2 hours. When the growth time exceeds 2 hours, the film thickness remains unchanged showing that the liquid has lost in growth ability. The weighted average reflection (%) of planar c-Si is reduced from 44.9 % to 29.6 % after deposition of the LPD-Al2O­3 for 2.5 hours growth time, indicating a 34.1 % reduction in reflection within wavelength region of 300–1100 nm. While the root means square (RMS) surface roughness of 36.5 nm was also recorded at the highest growth time of 2.5 hours. This shows the effect of thicker LPD-Al2O­3 thin film layer increases the anti-reflecting coating property of the material.

Growth rate of AL2O3 Thin Film by Liquid Phase Deposition as an Anti-reflection Coating Layer on Crystalline Silicon for Solar Cell Applications

The fabrication of photovoltaic (PV) device requires that surface reflectance of solar cells has to be minimized to achieve higher photo-conversion efficiency (PCE). Antireflection coating layer is deposited on the surface of a p-type crystalline silicon material to reduce the surface reflections of solar radiation and increase its absorption for efficient solar cell application. In this work, aluminum oxide thin film by liquid phase deposition (LPD-Al2O­3) is synthesized from combined solution of aluminum sulfate octadecahydrate (Al2(SO4)3·18H2­O) and sodium carbonate (NaHCO3) with pH of 3.1. Some samples of p-type (100) crystalline silicon (c-Si) wafers of resistivity 1 – 10 mΩ were immersed inside the growth liquid of LPD-Al2O­3 thin film for 1hr – 2.5 hours. This is followed by annealing the samples at a temperature of 450oC, the deposition rate is faster in the range 1 – 1.5 hours is about 35nm/hr. As the growth time increases, the growth rate of the film decreases and remains nearly constant at about 10 nm/hour at 1 – 2 hours. When the growth time exceeds 2 hours, the film thickness remains unchanged showing that the liquid has lost in growth ability. The weighted average reflection (%) of planar c-Si is reduced from 44.9 % to 29.6 % after deposition of the LPD-Al2O­3 for 2.5 hours growth time, indicating a 34.1 % reduction in reflection within wavelength region of 300–1100 nm. While the root means square (RMS) surface roughness of 36.5 nm was also recorded at the highest growth time of 2.5 hours. This shows the effect of thicker LPD-Al2O­3 thin film layer increases the anti-reflecting coating property of the material.

Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading. Part III: piecewise-homogeneous grading

In Parts I [ Appl. Opt. 58, 6067 (2019)APOPAI0003-693510.1364/AO.58.006067] and II [ Appl. Opt. 61, 10049 (2022)APOPAI0003-693510.1364/AO.474920], we used a coupled optoelectronic model to optimize a thin-film CIGS solar cell with a graded-bandgap photon-absorbing layer, periodically corrugated backreflector, and multilayered antireflection coatings. Bandgap grading of the CIGS photon-absorbing layer was continuous and either linear or nonlinear, in the thickness direction. Periodic corrugation and multilayered antireflection coatings were found to engender slight improvements in the efficiency. In contrast, bandgap grading of the CIGS photon-absorbing layer leads to significant enhancement of efficiency, especially when the grading is continuous and nonlinear. However, practical implementation of continuous nonlinear grading is challenging compared to piecewise-homogeneous grading. Hence, for this study, we investigated piecewise-homogeneous approximations of the optimal linear and nonlinear grading profiles, and found that an equivalent efficiency is achieved using piecewise-homogeneous grading. An efficiency of 30.15% is predicted with a three-layered piecewise-homogeneous CIGS photon-absorbing layer. The results will help experimentalists to implement optimal designs for highly efficient CIGS thin-film solar cells.

Performance Comparison of Si and GaAs Solar Cell due to Deposition of ZnO and SiO2 Antireflection Coating Layer

Performance Comparison of Si and GaAs Solar Cell due to Deposition of ZnO and SiO2 Antireflection Coating Layer

X-ray beam test of fabricated photo-diodes for Pohang-Accelerator-Laboratory X-ray free-electron laser

The Pohang-Accelerator-Laboratory X-ray free-electron laser (PAL-XFEL) emits intense, ultra-short X-ray pulses, enabling studies on ultra-small and -fast dynamics in various fields. We designed and fabricated silicon p-intrinsic-n photo-diodes (PDs) to detect strong X-ray pulses. Four types of PDs were fabricated with different metal shapes on the P- and N-sides. The fabrication process was split into two parts, based on the thickness of the Al metal and anti-reflective coating (ARC) layers, to evaluate the fabrication process feasibility and the detection performance. A beam test was performed with X-ray pulses at the soft X-ray beamline of the PAL-XFEL using the proposed PDs and a commercial PD. The test was designed to evaluate the effects of the metal and ARC layers and compare the detection efficiency depending on the X-ray entrance side and signal readout side. The waveforms were saved during the test and integrated to obtain the charges. Thereafter, they were analyzed and normalized, and compared. This paper presents the preparation, setup, and procedure of the beam test, and the test results are described.

Analysis of nanostructured anti reflection coating for various perovskite layer thicknesses in perovskite silicon tandem solar cells

The anti-reflection coating (ARC) plays an important role in the design of every kind of solar cell. The suitable optimization of the ARC layer can make a lot of difference in the final output of the cell, by reducing the reflections at the surface. In this regard, the present paper highlights and analyses numerically the effect of nanostructured ARC for different top perovskite layer thicknesses in perovskite-silicon tandem solar cells. In the present case, the nanostructures for ARC are considered to be made up of SiO2 nanoparticles (NP) embedded in ITO. To evaluate the effect of nanostructure for this proposed cell, the nanostructured tandem cell is compared with its planar ARC-based reference cell. The top perovskite active thickness is varied from 100 nm to 800 nm. It has been found that the effect of nanostructured ARC is more pronounced for thinner perovskite layer-based cells than for thicker layers. To reduce reflections at the front surface, the SiO2 NP diameter and inter-particle spacing are optimized. With the nanostructured ARC at the top, the cell achieved the current density rise of 11.3% as compared to the reference cell for a 100 nm thick perovskite-based tandem cell design. As both the sub-cells are in series in tandem design, the top cell current is matched to the bottom silicon layer current by optimizing the bottom cell too. The proposed ARC design has the added advantage that it can simply be done with sol–gel processes.

Simulation study of TiO2 single layer anti-reflection coating for GaAs solar cell

Anti-reflection coating (ARC) plays an important role in reducing the reflection of incident light and absorbing more photons to produce more photoelectrons. In this paper, a single-layer TiO2 anti-reflection coating is performed on GaAs solar cells. In the simulation study, we compared the solar cell before and after ARC by using PC1D simulation software. The I–V characteristics, reflectance, and external quantum efficiency have been simulated with a refractive index of 2.324 at 600 nm wavelength. The simulated results show that the ARC-coated solar cell performs better. It is found that the power conversion efficiency of 24.75% reflection is 9.5%, and the EQE is 95% at the 62 nm thickness of the ARC layer. The optimized reflectivity was found to be around 5%, which is quite lower than that without ARC (32%).

Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer

In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.

Ray Tracer Simulation of Si-Based Solar Cells using Al2O3/ITO as Double Layers Anti Reflective Coating

The solar cell has become one of the options for a greener world. Various studies have been done to achieve a solar cell with high efficiency and reasonable price. This study’s objective is to investigate how the thickness and base angle of the front layer affect the optical and electrical characteristics of Si-Based Solar cells. To accomplish this study, heterojunction solar cells using Al2O3/ITO as the double layer anti-reflection coating are analyzed using the Wafer Ray Tracer simulation by the PV Lighthouse. Al2O3 and ITO layers are used as a double anti-reflection coating (DLARC) in the light trapping strategy to support the reflection, absorption, and transmission (R, A and T) of the silicon solar cell. It acts to minimize reflectance and improves the overall efficiency of the solar cell. DLARC variation focuses on increasing absorption while decreasing reflection and transmission. The high refractive index of the hydrogenated a-Si (a-Si: H) emitter layer generates excessive reflection losses in SHJ solar cells making the silicon wafer have a low absorption efficiency. The DLARC thickness and base angle are varied as part of the simulation using the Wafer Ray Tracer by PV Lighthouse. The surface morphology of upright pyramid texture, height is 3.536 µm, texture base angle 54.74 °, and width 5 µm are used for reference scheme. Four schemes will be analyzed throughout this study along with the reference scheme. The result of this study is that Scheme 3 gives the optimum result with 99 % absorption, 21 % reflection and 67 % transmission. The goal of this study is to evaluate the impact of ARC thickness on optical and electrical characteristics. The best outcome is produced by varying the thickness and base angle of Scheme 3. The highest Jmax value, 0.3842 mA/cm2, is found in Scheme 3. HIGHLIGHTS The high refractive index of the hydrogenated a-Si (a-Si: H) emitter layer causes significant reflection losses in SHJ solar cells, resulting in a low absorption efficiency for the silicon wafer The double anti-reflection coating (DLARC) thickness and base angle are modified as part of the simulation using PV Lighthouse's Wafer Ray Tracer The best results are obtained by adjusting the thickness and base angle of Scheme 3. Scheme 3 has the highest Jmax value of 0.3842 mA/cm2 GRAPHICAL ABSTRACT

Can One Series of Self-Organized Nanoripples Guide Another Series of Self-Organized Nanoripples during Ion Bombardment: From the Perspective of Power Spectral Density Entropy?

Ion bombardment (IB) is a promising nanofabrication tool for self-organized nanostructures. When ions bombard a nominally flat solid surface, self-organized nanoripples can be induced on the irradiated target surface, which are called intrinsic nanoripples of the target material. The degree of ordering of nanoripples is an outstanding issue to be overcome, similar to other self-organization methods. In this study, the IB-induced nanoripples on bilayer systems with enhanced quality are revisited from the perspective of guided self-organization. First, power spectral density (PSD) entropy is introduced to evaluate the degree of ordering of the irradiated nanoripples, which is calculated based on the PSD curve of an atomic force microscopy image (i.e., the Fourier transform of the surface height. The PSD entropy can characterize the degree of ordering of nanoripples). The lower the PSD entropy of the nanoripples is, the higher the degree of ordering of the nanoripples. Second, to deepen the understanding of the enhanced quality of nanoripples on bilayer systems, the temporal evolution of the nanoripples on the photoresist (PR)/antireflection coating (ARC) and Au/ARC bilayer systems are compared with those of single PR and ARC layers. Finally, we demonstrate that a series of intrinsic IB-induced nanoripples on the top layer may act as a kind of self-organized template to guide the development of another series of latent IB-induced nanoripples on the underlying layer, aiming at improving the ripple ordering. The template with a self-organized nanostructure may alleviate the critical requirement for periodic templates with a small period of ~100 nm. The work may also provide inspiration for guided self-organization in other fields.

Recent Applications of Antireflection Coatings in Solar Cells

The antireflection coating (ARC) suppresses surface light loss and thus improves the power conversion efficiency (PCE) of solar cells, which is its essential function. This paper reviews the latest applications of antireflection optical thin films in different types of solar cells and summarizes the experimental data. Basic optical theories of designing antireflection coatings, commonly used antireflection materials, and their classic combinations are introduced. Since single and double antireflection coatings no longer meet the research needs in terms of antireflection effect and bandwidth, the current research mainly concentrates on multiple layer antireflection coatings, for example, adjusting the porosity or material components to achieve a better refractive index matching and the reflection effect. However, blindly stacking the antireflection films is unfeasible, and the stress superposition would allow the film layer to fail quickly. The gradient refractive index (GRIN) structure almost eliminates the interface, which significantly improves the adhesion and permeability efficiency. The high-low-high-low refractive index (HLHL) structure achieves considerable antireflection efficiency with fewer materials while selecting materials with opposite stress properties improves the ease of stress management. However, more sophisticated techniques are needed to prepare these two structures. Furthermore, using fewer materials to achieve a better antireflection effect and reduce the impact of stress on the coatings is a research hotspot worthy of attention.

Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell

Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO2 ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO2 ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO2 ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum power conversion efficiency (PCE) of 21.15%. The thicknesses of HfO2 ARC considerably impacted the photovoltaic (PV) characteristics of Si solar cells, leading to achieving high-performance solar cells.

Performance Improvement of npn Solar Cell Microstructure by TCAD Simulation: Role of Emitter Contact and ARC

In the current study, the performance of the npn solar cell (SC) microstructure is improved by inspecting some modifications to provide possible paths for fabrication techniques of the structure. The npn microstructure is simulated by applying a process simulator by starting with a heavily doped p-type substrate which could be based on low-cost Si wafers. After etching deep notches through the substrate and forming the emitter by n-type diffusion, an aluminum layer is deposited to form the emitter electrode with about 0.1 µm thickness; thereby, the notches are partially filled. This nearly-open-notches microstructure, using thin metal instead of filling the notch completely with Al, gives an efficiency of 15.3%, which is higher than the conventional structure by 0.8%. Moreover, as antireflection coating (ARC) techniques play a crucial role in decreasing the front surface reflectivity, we apply different ARC schemes to inspect their influence on the optical performance. The influence of utilizing single layer (ZnO), double (Si3N4/ZnO), and triple (SiO2/Si3N/ZnO) ARC systems is investigated, and the simulation results are compared. The improvement in the structure performance because of the inclusion of ARC is evaluated by the relative change in the efficiency (Δη). In the single, double, and triple ARC, Δη is found to be 12.5%, 15.4%, and 17%, respectively. All simulations are performed by using a full TCAD process and device simulators under AM1.5 illumination.

Numerical analysis of MgF2/SiO2 bilayers anti-reflective coating of light trapping in silicon solar cells by ray tracer software

Anti-reflective coating (ARC) application is continuously being developed extensively and widely for the manufacture of coatings on the surfaces of optical devices which are hugely essential, desirable, and required, particularly on silicon solar cells. Single layer ARC is sufficient, but double layer ARC tremendously enhances solar cell efficiency by covering a wider range of the solar spectrum. Magnesium fluoride, MgF2 and silicon dioxide, SiO2 are the ARC coatings used in this work, with wavelengths in the range from 300 to 1200 nm. The optical properties of bilayer ARC coatings were obtained by varying the thickness of the double coatings and see how the ARC effects Si solar cells. Wafer ray tracer was used in PV Lighthouse software to simulate and model MgF2 and SiO2 bilayer ARC coatings in order to fully understand the performance and impacts of the coatings on Si solar cells. This simulation work contains the analysis of reflection, absorption, transmission, and Jmax, which have been compared to many other theoretical results gathered from other studies and researches. To conclude, the absorption of the wavelength is highest between 500 nm to 900 nm leads to lowest reflection. The output shows that bilayer anti-reflective coatings with the thickness of 75 nm MgF2 and SiO2 are much more effective where the value of Jmax is reach 32.80 mA/cm2. The Jmax enhancement compare to reference is 27.13% is achieved.

Design and development of double-layer anti-reflection coating for HgCdTe based mid-wave infrared detector

A novel design and development of double-layer antireflection coating (ARC) is presented here for back side illuminated HgCdTe based mid- wave infrared (MWIR) detector. Reflectance of infrared radiation in the CdZnTe/HgCdTe structure is simulated to achieve optimum material and thickness of antireflection coating layers for mid- wavelength range. A polishing process for the surface qualification of CdZnTe material prior to deposition of layers has been developed using different chemical treatments and ellipsometric characterisation techniques. The desired ellipsometry parameters (i.e. 4.0<Ψ < 4.6 and 145<Δ<150) of CdZnTe surface is achieved with the polishing of Br2-metanol solution. The optimized ARC layers of YF3 and ZnS are deposited on the back side of CdZnTe surface and measured the reflectance by Fourier-Transform Infrared (FTIR) technique. The reflectance of below 2% is observed in the backside illuminated YF3/ZnS/CdZnTe/HgCdTe structure for mid-wave infrared range, which is similar with the simulated results. Thus, an improvements as well as new functionalities are implemented in infrared sensors by depositing optimum stack of thin film layers.

Determinantal study on the thickness of graphene oxide as ARC layer for silicon solar cells using: A simulation approach

This work describes the thickness optimization of graphene oxide (GO) as an antireflection coating (ARC) layer using a low-cost deposition process and validates the experimental results by a simulation study. The optimization of GO thickness was carried out by varying the speed of the spin coating and characterized by various characterization tools. It was found that GO ARC of thickness 80 nm was optimized having the lowest average reflectance of ∼7.69% which was lowered to other GO thicknesses. In a simulation study, the different GO thicknesses were selected as input parameters to explore the highest photovoltaic performances of Si solar cells. The Si solar cell with the GO thickness of 80 nm expressed the highest short-circuit current (Isc = 3.42 A), open-circuit voltage (Voc = 0.653 V), power conversion efficiency (18.78%), and FF (83.74%). The photovoltaic (PV) parameters such as Isc, Voc, FF, efficiency, and sheet resistance were characterized by varying the thickness of ARC layer at the junction depth range from 0.1 μm to 0.5 μm for Si solar cells. It was been found that the optimized thickness (80 nm) of the GO ARC layer exhibited high performance, photocurrent, external quantum efficiency (EQE) of 95%, and high generation of charge carriers. This simulation on optimizing the GO thickness for Si solar cells would provide the utilization of low-cost GO ARC for the development of high-performance Si solar cells.

Absorption improvement of organic solar cells using grating structures in active layer and antireflection coating layer

The effects of grating structure on the performance of PTB7 : PC70BM organic solar cells (OSCs) are considered. First, an OSC with a flat antireflection coating (ARC) is studied, and the effects of grating structures inside the active area of this solar cell are investigated. It is conceivable to increase the short circuit current density (JSC) of solar cells using dissimilar gratings. Nonetheless, there are essential limitations that constrain usage of this method inside the OSCs. Conducting optimization processes based on particle swarm optimization algorithm, it is found that the highest achievable JSC for three-grating structure is only 3.2% higher than the single structure grating. Consequently, we have used the grating structure inside the ARC layer of the solar cell. It is observed that using the Gaussian grating ARC layer could increase the overall JSC of the solar cell by 21.1%, which is omnidirectional, as well.

Design and Simulation of Triple Layer Antireflection Coating for Silicon Solar Cells

In present work an attempt has been made to investigate the effect of triple layer anti-reflection coating (TLARC) on the surface of silicon cell theoretically. In this regard, MgF2, Si3N4, and TiO2 have been used to design anti-reflection coatings (ARC). Reflection spectra for single double and triple layer ARCs have been evaluated numerically using transfer matrix method (TMM). Numerically calculated reflection spectra for single, double, and triple layer anti-reflection coatings further used in PC1D simulator to study the performance of silicon solar cell. Result shows reduction in reflectance of silicon solar cell down to less than 3% in the wavelength range 400 – 1200 nm with conversion efficiency 21.6% for TLARC (MgF2/Si3N4/TiO2).