Anomalous Hall Coefficient Research Articles

Observation of skyrmion-induced topological Hall effects in Mn3.5Au0.5N films

The Mn4-xAuxN films were grown on MgO(001) substrates by plasma assisted molecular beam epitaxy. The magnetic characteristics and spin transport properties are systematically studied. A sign reversal of anomalous Hall coefficient is observed at 160 K in Mn3.5Au0.5N. This phenomenon can be attributed to the competition between electron-like and hole-like anomalous Hall effects (AHEs). The mutual eliminating of electron-like and hole-like AHEs gives rise to zero resistivity of 160 K at high field. A butterfly-like curve with two humps is observed at 160 K, which can be ascribed to the skyrmion-induced topological Hall effects (THEs). It is thus confirmed that the transverse resistivity in Mn3.5Au0.5N comprises of three components: electron-like AHEs, hole-like AHEs, and skyrmion-induced THEs. An effective method was employed to analyze THEs in the material systems that contain both electrons and holes. The THEs in Mn3.5Au0.5N can be observed after electron-like AHEs are subtracted down from transverse resistivity.

Structure-dependent spin-polarized electron transport in twin-crystal Cu1-xEuxO semiconductors.

In this work, Eu-doped twin copper oxide (twin Cu1-xEuxO) was synthesized using the gas-liquid phase chemical deposition method in combination with high-temperature oxidation. The incorporation of Eu3+ ions was affected by their diffusivity and the related charge trapping mechanisms. The twin Cu1-xEuxO configuration exhibited significant room-temperature ferromagnetism. From our analysis, it was demonstrated that as the Eu3+ doping concentration increased, the saturation magnetization first increased and then gradually decreased, reaching a peak at 0.82 at%. A p-type to an n-type semiconducting transition was also recorded as the doping concentration increased. A significant anomalous Hall effect characterized by a maximum anomalous Hall coefficient of 1.65, and a maximum Hall conductivity mobility of 16.50 Ohm-1 cm-1 and 250.59 cm2 v-1 s-1, respectively, were derived for the twin Cu1-xEuxO, doped with 0.82 at% at room temperature. First-principles computational simulations were also conducted to elucidate the underlying mechanisms of the magnetic properties, the p-type to n-type transition, and the interplay between the spin-polarized states associated with 4f and carriers. In twin Cu1-xEuxO, the anomalous Hall effect originated from the contribution of the edge-to-jump scattering mechanism. The latter can be significantly enhanced by doping with Eu atoms, which yields the manifestation of the oblique scattering mechanism. Our work paves the way for the development of twin Cu1-xEuxO material structures, which emerge as an ideal candidate for future spintronic applications.

Large anomalous Hall effect and intrinsic Berry curvature in magnetic Weyl semimetal NdAlGe

Weyl semimetals driven by both time-reversal (TRS) and inversion symmetries (IS) are rare and be a good platform to investigate the relationship between chiral current and magnetic order. NdAlGe compound, grown in a single crystalline form by the flux method, has a noncentrosymmetric I41md crystal structure, which breaks inversion symmetry. The magnetic susceptibility χ(T) shows anisotropic behavior; ferromagnetic with divergence of field cooling (FC) and zero field cooling (ZFC) in H∥c, and antiferromagnetic transition for magnetic field H⊥c. The band structure calculation has revealed that NdAlGe is the type-II Weyl semimetal with four types of Weyl nodes in the ab-plane with a probable Fermi surface nesting vector. The ferromagnetic spin alignment gives a significant anomalous Hall coefficient Rs and large anomalous Hall conductivity σxyA, for H∥c. The giant anomalous Hall conductivity σxyA, constant SH=σxyA/M (H = 50 kOe) value, and their Karplus and Luttinger (KL) analysis support that the giant AHE is associated with the intrinsic Berry curvature in NdAlGe compound. The intrinsic Berry curvature is also confirmed by the planar Hall effect over a wide temperature range, implying that the Weyl semimetallic property is not relevant with the magnetic order.

Hall effect of RCo2 (R= Er and Lu) compounds

The Hall effect of RCo2 with R = Er and Lu has been studied. LuCo2 is an exchange-enhanced Pauli paramagnet. ErCo2 is ferrimagnetic below TC = 32 K and undergoes a first-order magnetic transition at TC. The Hall resistivity ρxy was measured as a function of the magnetic field B at various temperatures. We estimated the normal (ordinary) Hall coefficient RN and the anomalous Hall coefficient RA from the analyses of the ρxy – B curves and the magnetization curves. For LuCo2, ρxy increases linearly with increasing field and its slope decreases rapidly with increasing temperature below 70 K. This is attributable to strong temperature dependence of RN. The ρxy – B curve of ErCo2 depends on a magnetic state. In the ferrimagnetic state, both RN and RA have positive values, while RN is positive and RA is negative in the paramagnetic state. We calculated RN's of nonmagnetic and ferromagnetic LuCo2 from the energy band structures and compared them with the experimental values. The origin of a sign change in RA of ErCo2 is briefly discussed.

Ferroelectric control of magnetic anisotropy of 5d transition metal monolayers

Electric field control of magnetism using ferroelectric materials offers promising applications in low-power spintronics. We have conducted systematic density functional theory calculations to investigate the magnetic properties of epitaxial $5d$ transition metal monolayers on a ferroelectric substrate: $\mathrm{PbTi}{\mathrm{O}}_{3}$ (PTO). Our study reveals that the magnetocrystalline anisotropy energy of the osmium monolayer is significantly enhanced to 18.1 meV/Os in the upward polarization state and, moreover, the anomalous Hall coefficient of osmium/PTO film is tunable by reversing the electric polarization of the PTO substrate. Additionally, the electric polarization reversal in PTO rotates the easy magnetization axis of the iridium and platinum monolayers by ${90}^{\ensuremath{\circ}}$, which is attributed to the rearrangement of interfacial charges. Our findings suggest an efficient approach to control the magnetization direction of monoatomic layers and provide valuable insights for the development of low-energy spintronics devices.

Synthesis of antiferromagnetic Weyl semimetal Mn3Ge on insulating substrates by electron beam assisted molecular beam epitaxy

The antiferromagnetic kagome semimetals Mn3X (X = Ge, Sn, Ga) are of great interest due to properties arising from their Berry curvature, such as large anomalous Nernst and anomalous Hall coefficients, and spin to charge conversion efficiencies at ambient temperatures. However, the synthesis of epitaxial thin films of Mn3Ge in the desired hexagonal phase has been challenging because they do not wet insulating substrates, necessitating the use of a metallic buffer layer. Furthermore, a ferrimagnetic tetragonal phase also forms readily under typical growth conditions, interfering with hexagonal phase properties. We have synthesized atomically smooth and continuous epitaxial thin films of hexagonal Mn3Ge directly on insulating LaAlO3 (111) substrates using electron beam assisted molecular beam epitaxy, using a three-step process that mitigates the formation of the tetragonal phase. The anomalous Nernst coefficient is found to be more than six times larger in our films than in sputtered thin films of Mn3Ge and significantly larger than that of Fe. Our approach can be used to grow thin layers of kagome materials, without interference from a buffer layer in transport properties, and may be applicable to a broader range of materials with large surface energies that do not grow readily on insulating substrates.

Electrical and Magnetic Transport Properties of Co2VGa Half-Metallic Heusler Alloy.

This study performed a systematic experimental investigation into the structural, magnetic, and transport properties of the Co2VGa Heusler alloy, which was theoretically predicted to exhibit half-metallic ferromagnetism. It has been experimentally found that the studied alloy has a relatively high-ordered L21 cubic structure at room temperature and orders ferromagnetically below ~350 K. Interestingly, by fitting the electric transport data with the properly governing equations in two different temperature regions, the two-magnon scattering process (the dependence) appears in the temperature range from 30 to 75 K. Moreover, the magnetoresistance effect changes from a negative value to a positive value when the temperature is below 100 K. Such experimental findings provide indirect evidence that the half-metallic nature of this alloy is retained only when the temperature is below 100 K. On the other hand, the magnetic transport measurements indicate that the anomalous Hall coefficient of this alloy increases when the temperature increases and reaches a relatively high value (~8.3 μΩ·cm/T) at 300 K due to its lower saturated magnetization. By analyzing the anomalous Hall resistivity scale with the longitudinal resistivity, it was also found that the anomalous Hall effect can be ascribed to the combined effect of extrinsic skew scattering and intrinsic Berry curvature, but the latter contribution plays a dominant role.

Hall effect of itinerant electron metamagnet Co(S1-xSex)2

We have studied the Hall effect of Co(S1-xSex)2 with 0.08 ≤ x ≤ 0.14, which shows itinerant electron metamagnetism (IEM). The Hall resistivity ρxy was measured as a function of the magnetic field B at various temperatures. It is found that ρxy decreases nearly linearly with increasing B in the paramagnetic state, while it has a positive slope in the ferromagnetic state. Abrupt drops were observed at around the metamagnetic transition field in the ρxy – B curves, which are attributable to the anomalous Hall effect. From the analyses of the ρxy – B curves and the magnetization curves, we estimated the anomalous Hall coefficient, the normal (ordinary) Hall coefficient in the ferromagnetic state, and that in the paramagnetic state. Appearance of both ferromagnetic and paramagnetic states depending on a magnetic field in IEM makes it possible to estimate these values, simultaneously. The estimated normal Hall coefficients are compared with the theoretical values calculated from the energy band structures. The present study has demonstrated that IEM provides a suitable stage to understand the electronic structures of both ferromagnetic and paramagnetic states of the itinerant electron system at the same temperature.

Three-dimensional bulk Fermi surfaces and Weyl crossings of Co2MnGa thin films underneath a protection layer

Angle-resolved photoelectron spectroscopy utilizing soft x-ray synchrotron radiation was applied to Heusler-type ${\mathrm{Co}}_{2}\mathrm{MnGa}$ thin films that have a 1-nm Al capping layer. The bulk Fermi surfaces and band structures varied along the out-of-plane momentum, stemming from the three-dimensional crystal structure, in the absence of any in situ surface treatment. In addition, there were characteristic intersecting bands (Weyl cones), with crossing points near the Fermi level, which were consistent with computed results. The Weyl cones are of bulk origin and are responsible for the high anomalous Nernst and the anomalous Hall coefficients. A close comparison of the experimental band structures in ${\mathrm{Co}}_{2}\mathrm{MnGe}$ and ${\mathrm{Co}}_{2}\mathrm{MnGa}$ indicated that the rigid band picture is valid in both alloys and that fine carrier tuning is possible by replacing Ga with Ge to improve the anomalous conductivity.

Magnetic field-induced non-trivial electronic topology in Fe3−xGeTe2

The anomalous Hall, Nernst, and thermal Hall coefficients of the itinerant ferromagnet Fe3−xGeTe2 display anomalies upon cooling that are consistent with a topological transition that could induce deviations with respect to the Wiedemann–Franz (WF) law. This law has not yet been validated for the anomalous transport variables, with recent experimental studies yielding material-dependent results. Nevertheless, the anomalous Hall and thermal Hall coefficients of Fe3−xGeTe2 are found, within our experimental accuracy, to satisfy the WF law for magnetic fields μ0H applied along its c axis. Remarkably, large anomalous transport is also observed for μ0H||a axis with the field aligned along the gradient of the chemical potential generated by thermal gradients or electrical currents, a configuration that should not lead to their observation. These anomalous planar quantities are found to not scale with the component of the planar magnetization (M||), showing instead a sharp decrease beyond μ0H||= 4 T or the field required to align the magnetic moments along μ0H||. We argue that chiral spin structures associated with Bloch domain walls lead to a field-dependent spin chirality that produces a novel type of topological transport in the absence of interaction between the magnetic field and electrical or thermal currents. Locally chiral spin structures are captured by our Monte Carlo simulations incorporating small Dzyaloshinskii–Moriya and biquadratic exchange interactions. These observations reveal not only a new way to detect and expose topological excitations, but also a new configuration for heat conversion that expands the current technological horizon for thermoelectric energy applications.

Unveiling transport properties of Co2MnSi Heusler epitaxial thin films with ultra-low magnetic damping

The family of Co-based Heusler compounds contains promising candidates for spintronic applications regarding their predicted Half-Metal-Magnetic nature, ultra-low magnetic damping coefficients, high curie temperatures and tunable electronic properties. Here we focused on the transport properties of Co2MnSi thin films with thickness in the range of 4-44 nm exhibiting magnetic damping in the 10-4 - 10-3 range. The goals of this study are to examine the impact of the peculiar electronic band structure on the transport properties, to identify the temperature-dependent scattering process, and to extract robust conduction parameters to exploit this material in magnetoelectric devices. In order to undoubtedly correlate all results, the full study has been performed on the same series of samples. Scanning transmission electron microscopy experiments were performed to check the chemically-ordered L21 phase in our films, and also allowed us to identify misfit dislocations generated at the interface with the substrate. The variation of the resistivity with film thickness was measured at different temperatures. The results are examined under the Fuchs and Sondheimer model which allowed us to extract the electron mean free path in Co2MnSi in the temperature range 5 – 300 K. Values for the residual resistivity, Debye temperature, and distance between the Fermi energy and the conduction band for minority spins were obtained from the fit of the resistivity versus temperatures curves. A negative AMR ratio was measured for all the samples which confirmed the Half-metallic nature of the Co2MnSi films. The determination of the ordinary Hall coefficient alloys allowed us to extract the carrier concentration and carrier mobility and their dependency on the temperature. Finally, scaling of the anomalous Hall coefficient with the longitudinal resistivity was performed indicating that skew scattering is the dominant temperature-dependent scattering mechanism in our films.

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

AbstractUnderstanding the Verwey transition in magnetite (Fe3O4), a strongly correlated magnetic oxide, is a one‐century‐old topic that recaptures great attention because of the recent spectroscopy studies revealing its orbital details. Here, the modulation of the Verwey transition by tuning the orbital configurations with ionic gating is reported. In epitaxial magnetite thin films, the insulating Verwey state can be tuned continuously to be metallic showing that the low‐temperature trimeron states can be controllably metalized by both the gate‐induced oxygen vacancies and proton doping. The ionic gating can also reverse the sign of the anomalous Hall coefficient, indicating that the metallization is associated with the presence of a new type of carrier with competing spin. The variable spin orientation associated with the sign reversal is originated from the structural distortions driven by the gate‐induced oxygen vacancies.

Thermal and field-rate dependence of multi-step magnetization switching of synthetic antiferromagnetic multilayers

Synthetic antiferromagnetic (SAF) multilayers are a kind of functional materials with great potential for spintronic devices. Many excellent properties of SAF multilayers have been widely reported in previous works. Here, we experimentally found that the magnetization switching steps n of [Pt/Co]2/Ru/[Co/Pt]4 SAF multilayers with perpendicular magnetic anisotropy are highly dependent on the temperature and magnetic field sweeping rate by magneto-optic Kerr effect and anomalous Hall resistance measurement. It is found that the contribution of the upper and lower layers of the SAF multilayers to the anomalous Hall coefficients is different. The switching steps n change from 2 to 3 by reducing the thickness of the non-magnetic spacer, decreasing the sweeping rate of the magnetic field, and increasing the temperature of the measuring environment. Our findings could provide a method to achieve multi-step magnetization switching for functional spintronic devices.

Features of the electroresistivity, magnetic and galvanomagnetic characteristics in Co2MeSi Heusler alloys

The electro- and magneto-transport as well as magnetic properties of Co2MeSi (Me = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys were studied. The electroresistivity was measured from 4.2 to 300 K, the galvanomagnetic properties (magnetoresistivity and Hall effect) were measured at T = 4.2 K in magnetic fields of up to 100 kOe, and the magnetization at T = 4.2 and 300 K in fields of up to 70 kOe. The normal and anomalous Hall coefficients, saturation magnetization, residual resistivity, current carrier concentration, coefficients at linear contributions into the electroresistivity and magnetoresistivity were obtained. It was shown that on the one hand, there is quite clear correlation between the electronic and magnetic characteristics of Heusler alloys studied, and the spin polarization coefficients of current carriers, taken from well know literature data, on the other hand. The obtained results can be used for creation of new materials for spintronics.

Peculiarities of the electronic and magnetic characteristics in Co2 YSi (Y = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys close to the half-metallic ferromagnets and spin gapless semiconductors

The Hall Effect and magnetization of Heusler alloys Co2YSi (Y = Ti, V, Cr, Mn, Fe, Co, Ni) were measured at T = 4.2 K and 300 K in magnetic fields of up to 100 kOe as well as the temperature dependence of the electroresistivity from 4.2 to 300 K. The normal and anomalous Hall coefficients, saturation magnetization, residual resistivity, type and concentration of current carriers and their mobility were obtained. It was demonstrated that there is a clear correlation between the electronic and magnetic parameters obtained, depending on the number of valence electrons z, at the transition from Co2TiSi (z=26) to Co2NiSi (z=32). The observed peculiarities of electronic and magnetic parameters may be due to the appearance of the states of the half-metallic ferromagnet and/or spin gapless semiconductor.

Fe3Se4: a possible ferrimagnetic half-metal?

Half-metallic ferromagnets show 100% spin-polarization at the Fermi level and are ideal candidates for spintronic applications. Despite the extensive research in the field, very few materials have been discovered so far. Here, we present results of electronic band structure calculations based on density functional theory and extensive physical-property measurements for Fe3Se4 revealing signatures of half-metallicity. The spin-polarized electronic band structure calculations predict half-metallic ferrimagnetism for Fe3Se4. The electrical resistivity follows exponentially suppressed electron–magnon scattering mechanism in the low-temperature regime and show a magnetoresistance effect that changes the sign from negative to positive with decreasing temperature around 100 K. Other intriguing observations include the anomalous behavior of Hall resistance below 100 K and an anomalous Hall coefficient that roughly follows the ρ2 behavior.

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal Co2MnGa thin films

We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.

Disorder-driven non-Fermi liquid behavior in itinerant ferromagnet α-Co5Ge3

The physical properties of itinerant ferromagnet -Co5Ge3 with both strong disorder and spin fluctuations was studied. The dc and ac susceptibility show that both spin fluctuations and disorder dominate the physical properties. In the spin glass phase, with a coexisting ferromagnetic state (30 K), both non-Fermi liquid behavior and large exponent of scaling relation of are observed and attributed to the spin fluctuations and disorder induced by cobalt defects. Upon the increase of external field, Fermi liquid behavior restores due to the suppression of spin fluctuations and disorder. In addition, a large anomalous Hall coefficient Rs is observed. Our results suggest that -Co5Ge3 is a typical itinerant ferromagnet to explore the interplay of disorder and spin fluctuations.

Transition from intrinsic to extrinsic anomalous Hall effect in the ferromagnetic Weyl semimetal PrAlGe1−xSix

Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSMs) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHEs in a new family of FM WSMs, PrAlGe1−xSix, where x can be tuned continuously. Based on the first-principles calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces, but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient (RS), but significant changes in the ordinary Hall coefficient (R0) in PrAlGe1−xSix as a function of x. By comparing the magnitude of R0 and RS, we identify two regimes: |R0| < |RS| for x ≤ 0.5 and |R0| > |RS| for x > 0.5. Through a detailed scaling analysis, we uncover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when x ≤ 0.5. Such a universal AHC is absent for x > 0.5. Our study, thus, reveals the significance of extrinsic mechanisms in FM WSMs and reports the first observation of the transition from the intrinsic to extrinsic AHE in PrAlGe1−xSix.

Magnetic and magnetotransport study of Si/Ni multilayers correlated with structural and microstructural properties

Influence of Si layer spacer on the magnetic and magnetotransport properties of the Si/Ni multilayers has been studied. The study is performed by investigating a series of [Si(tSi)/Ni(30Å)]20 multilayers prepared by DC magnetron sputtering process. The structural and microstructural studies suggest that the effective crystallites size increases with the decrease in tSi. The cross sectional TEM data reveal that the Si/Ni multilayers with tSi ≤ 10 Å are of discontinuous form. The magnetization (M20kOe) obtained at 20 kOe increases as tSi decreases and reaches towards the bulk value of Ni. This increase in M20kOe is due to the increase in effective size of the Ni nanocrystallites. The magnetotransport parameters such as saturated anomalous Hall resistance, anomalous Hall coefficient, Hall sensitivity and magnetoresistance ratio are found to gradually increase within 100 Å ≤ tSi ≤ 30 Å and then sharply increase till tSi = 10 Å due to surface and interface scattering. These parameters decrease when tSi further reduces down to 5 Å which is beyond the percolation threshold. The maximum enhancements of about 33 times in anomalous Hall resistance and 24 times in anomalous Hall coefficient are found at tSi = 10 Å when compared with the multilayers having tSi = 100 Å. The skew scattering is the dominant mechanism which is responsible for the anomalous Hall effect phenomena in the Si/Ni multilayers. The Si/Ni multilayers also show anisotropic magnetoresistance.