In this work, a detailed investigation of low temperature electrical transport behaviour of Nd0.7Sr0.3MnO3 thin films grown on (001) oriented LaAlO3 substrate by RF magnetron sputtering is reported. Temperature (T) dependence of electrical resistivity [ρ(T)] exhibits metal—insulator transition (TMI) with low temperature minima (Tmin) and further increase in resistivity with decrease in temperature. At T < Tmin, ρ(T) is well agreed with logarithmic temperature relation i.e. with spin state (S) of 3/2 and Kondo temperature (TK) of ∼10 K, but the contribution of logarithmic temperature is suppressed by employing a magnetic field of 5 T. This behaviour of ρ(T) resembles Kondo like spin disorder scattering in the absence of magnetic field and in the presence of magnetic field, the feature of ρ(T) is appeared due to the localized states of electrons in a weakly potentials. Negative magneto-resistivity (MR) of the films signifies that the electron—electron interaction is more dominated under the magnetic field. T > Tmin, ρ(T) in the metallic region is demonstrated by the electron—phonon interaction (T5). Maximum MR is found to be 96% in the magnetic field of 5 T for small thickness film.