Annealed GaAs Surfaces Research Articles

Adsorption of oxygen on clean gaas surfaces investigated by ultraviolet photoemission

The adsorption of oxygen at exposures of up to 10 5 L on differently oriented, ion-bombarded and annealed GaAs surfaces was investigated by UPS. Coverages θ As for the clean surfaces and oxygen coverages for the oxygen exposed surfaces were estimated by additional SXPS measurements. It was concluded that at small exposures molecular and atomic adsorption are comparable in quantity and that atomic adsorption (oxidation) becomes maximum at θ As, ≈ 0.2 for (111)Ga and (001) surfaces. Bonding of oxygen molecules should involve Ga sites. Specific bonding of oxygen atoms (O-Ga or O-As) was not indicated by the two stable UPS peaks as they occurred for arsenic coverages from 0 to 0.5 and did not shift their energy positions. They simply indicate the two states of the adsorbate atoms, single and double bonds, to substrate atoms. For the surfaces prepared here, monolayer coverage by oxygen was obtained at about 10 10L. Likewise adsorption of H 2O was investigated.