Angle-resolved photoelectron measurements have been carried out on the 2p orbital of Si in the gas-phase molecules SiF 4 and Si(CH 3) 4 as a function of energy from 3 to 45 eV above the ionization threshold. From these data the angular distribution parameter, β, has been obtained. Below a photoelectron energy of 15 eV the angular distribution parameter for these two molecules differ by as much as 0.4 units. The differences in the behavior of β near threshold for the two molecules is attributed to the different molecular environment of the silicon atom. To test this idea, calculations have been made on β for neutral and charged atomic silicon.
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