Analysis Of Electronic Systems Research Articles

Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring

Ionizing radiation induces the degradation of electronic systems. For memory devices, this phenomenon is often observed as the corruption of the stored data and, in some cases, the occurrence of sudden increases in current consumption during the operation. In this work, we propose enhanced experimental instrumentation to perform in-depth Single-Event Effects (SEE) monitoring and analysis of electronic systems. In particular, we focus on the Single-Event Latch-up (SEL) phenomena in memory devices, in which current monitoring and control are required for testing. To expose the features and function of the proposed instrumentation, we present results for a case study of an SRAM memory that has been used on-board PROBA-V ESA satellite. For this study, we performed experimental campaigns in two different irradiation facilities with protons and heavy ions, demonstrating the instrumentation capabilities, such as synchronization, high sampling rate, fast response time, and flexibility. Using this instrumentation, we could report the cross section for the observed SEEs and further investigate their correlation with the observed current behavior. Notably, it allowed us to identify that 95% of Single-Event Functional Interrupts (SEFIs) were triggered during SEL events.

EMI/EMC Analysis of Printed Circuit Boards Subject to Near-Zone Illuminations

Previously, we proposed a hybrid <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> -matrix approach for general electromagnetic interference/electromagnetic compatibility (EMI/EMC) analysis of electronic systems. However, that approach was limited to plane wave excitations. In this short paper, we propose a generalization of the hybrid <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> -matrix approach to near-zone excitations. Such excitations lead to a continuous spectrum of forced modes that are not readily decomposed using the generalized pencil of function method. Herewith, we employ the discrete Fourier transform, with a priori knowledge of the natural transmission line modes, to extract the coefficients of all dominant spectral components. These are subsequently used to generate the hybrid <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</i> -matrix entries under near-zone EMI illuminations.

Acquisition of Computer Aided Design/Analysis Models for Semiconductors

Abstract Because of the role of the digital computer in the design and analysis of electronic systems, it is becoming increasingly desirable to have suitable computer aided analysis models of semiconductor devices at the time these devices are available for experimental development. This paper describes the development of such computer aided design/analysis (CAD/A) models. The procedures described can be used to develop models based on statistically significant populations of devices. The statistical procedures for selecting devices to be tested, the testing procedures, and the computer codes used for reducing data are described. Examples of computer output and a complete CAD/A model derived using the procedure are included for a sample device.

Mathematical Interrelationship Between Reliability and Maintainability in Various System Models

This paper defines and summarizes several concepts and tools which have been developed to aid in the analysis of electronic systems from the part level through the system level. The problems explored are those for which the parameters, failure rates, and repair rates may be assumed constant; i.e., the exponential distribution may be assumed. It also is assumed that all parts, components, etc., are operable at an arbitrary reference time zero. Moreover, a short cut for determining the mean of the type of equations discussed in this paper is presented, the direct method of defining limiting availability is included, and the method of determining the mean of the reliabilities from their Laplace transform is demonstrated, along with checks on the availability equation matrix of an active system.