Auger Electron Spectroscopy Research Articles

Observation of novel carbon nanocorals during the synthesis of graphene and investigations on their composition, morphological and structural properties

Novel carbon nanocorals (CNCs) are observed during the synthesis of graphene on copper substrates by thermal chemical vapor deposition, using precursor gas acetylene (C2H2) and carrier gas argon (Ar). CNCs have unique structure and investigations are carried out on structural and elemental compositions by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray excited Auger electron spectroscopy (XAES), energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FESEM), and high resolution transmission electron microscopy (HRTEM). The graphitic nature of the CNCs is evident from characteristic D, G, and 2D bands obtained from Raman spectrum. Elemental composition analysis by XPS shows presence of sp2 and sp3 hybridized carbon whereas XAES quantifies percentage of sp2 and sp3 hybridized carbon. FESEM micrographs show a uniform distribution of densely packed CNCs throughout the sample, and formation of groups of CNCs with distinct contours on the surface. The cross-sectional FESEM shows stacking of large number of graphene layers with dendrites. HRTEM analysis further supports observations of FESEM and elaborates structural morphology of the CNCs. Synthesis, characterization and analysis of the properties of carbon nanocorals are reported here, for the first time.

Promoting subsurface Sn incorporation at Nb(100) oxide surface sites leading to homogeneous Nb3Sn film growth for superconducting radiofrequency applications

For next-generation superconducting radiofrequency (SRF) cavities, the interior walls of existing Nb SRF cavities are coated with a thin Nb3Sn film to improve the superconducting properties for more efficient, powerful accelerators. The superconducting properties of these Nb3Sn coatings are limited due to inhomogeneous growth resulting from poor nucleation during the Sn vapor diffusion procedure. To develop a predictive growth model for Nb3Sn grown via Sn vapor diffusion, we aim to understand the interplay between the underlying Nb oxide morphology, Sn coverage, and Nb substrate heating conditions on Sn wettability, intermediate surface phases, and eventual Nb3Sn nucleation. In this work, Nb-Sn intermetallic species are grown on a single crystal Nb(100) in an ultrahigh vacuum chamber equipped with in situ surface characterization techniques including scanning tunneling microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. Sn adsorbate behavior on oxidized Nb was examined by depositing Sn with submonolayer precision on a Nb substrate held at varying deposition temperatures (Tdep). Experimental data of annealed intermetallic adlayers provide evidence of how Nb substrate oxidization and Tdep impact Nb-Sn intermetallic coordination. The presented experimental data contextualize how vapor and substrate conditions, such as the Sn flux and Nb surface oxidation, drive homogeneous Nb3Sn film growth during the Sn vapor diffusion procedure on Nb SRF cavity surfaces. This work, as well as concurrent growth studies of Nb3Sn formation that focus on the initial Sn nucleation events on Nb surfaces, will contribute to the future experimental realization of optimal, homogeneous Nb3Sn SRF films.

Effect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

Using the methods of secondary ion mass spectrometry, elastic peak electron spectroscopy and Auger electron spectroscopy, the elemental and chemical composition of the surface, concentration profiles of the distribution of atoms over the depth of silicon implanted with O2+ ions with energy E0 = 1 keV at a dose of D = 6 × 1016 cm–2 were studied. It was found that oxides and suboxides of Si (SiO2, Si2O and SiO0.5) were formed in the ion-doped layer, and it also contained unbound O and Si atoms. Post-implantation annealing at 850–900 K led to the formation of a stoichiometric SiO2 layer ~25–30 Å thick.

Modeling the influence of the duration of water vapor pulses on the properties of hafnium oxide synthesized by atomic layer deposition method

The work experimentally and theoretically analyzes the process of atomic layer deposition of hafnium oxide with the participation of water vapor as an oxidizing agent. The study of infrared absorption, Auger spectroscopy and luminescence shows that with increasing water pulse duration, the concentration of oxygen vacancies decreases and the composition tends to stoichiometric, which is given by the formula HfO2. Modeling of gas dynamics and kinetics of film synthesis by atomic layer deposition was performed, which showed the dependence of the coverage of the film surface with oxygen on the pulse duration and deposition temperature. A comparison of calculations with experimental results made it possible to estimate the magnitude of the kinetic coefficients of the synthesis processes that describe the observed experimental dependences and to show that the larger of the two temperatures of the atomic layer deposition window is associated with water desorption.

(Keynote) Unified Quantum Theory of Electrochemical Kinetics Based on Coupled Ion-Electron Transfer

A general theory of coupled ion–electron transfer (CIET) is presented, which unifies quantum kinetics of electron transfer (ET) with classical kinetics of bond-breaking ion transfer (IT) in a general framework of non-equilibrium thermodynamics [1]. In the limit of large reorganization energy, the theory predicts Marcus kinetics of “electron-coupled ion transfer” (ECIT). In the limit of large ion-transfer energies, the theory predicts generalized Butler–Volmer kinetics of “ion-coupled electron transfer” (ICET), where the charge transfer coefficient and exchange current are connected to microscopic properties of the electrode/electrolyte interface. In the ICET regime, the reductive and oxidative branches of Tafel’s law are predicted to hold over a wide but finite range of overpotentials, bounded by the ion-transfer energies for oxidation and reduction, respectively. The probability distribution of transferring electron energies in CIET smoothly interpolates between a shifted Gaussian distribution for ECIT (as in the Gerischer–Marcus theory of ET) to an asymmetric, fat-tailed Meixner distribution centered at the Fermi level for ICET. The latter may help interpret asymmetric line shapes in x-ray photo-electron spectroscopy (XPS) and Auger electron spectroscopy (AES) for oxidized metal surfaces in terms of shake-up relaxation of the ionized atom and its image polaron by ICET. In the limit of large overpotentials, the theory predicts a transition to inverted Marcus ECIT, leading to a universal reaction-limited current for metal electrodes, dominated by barrierless quantum transitions. Uniformly valid, closed-form asymptotic approximations are derived that smoothly transition between the limiting rate expressions for ICET and ECIT for metal electrodes, using simple but accurate mathematical functions. The theory is applied to lithium intercalation in lithium iron phosphate (LFP) and found to provide a consistent description of the observed current dependence on overpotential, temperature and concentration, learned from x-ray images [2]. CIET theory thus provides a critical bridge between quantum electrochemistry and electrochemical engineering.[1] M. Z. Bazant, Unified quantum theory of electrochemical kinetics by coupled ion-electron transfer, Faraday Discussions 246, 60-124 (2023).[2] H. Zhao, H. D. Deng, A. E. Cohen, J. Lim, Y. Li, D. Fraggedakis, B. Jiang, B. D. Storey, W. C. Chueh, R. D. Braatz, and M. Z. Bazant, Learning heterogeneous reaction kinetics from X-ray movies pixel-by-pixel, Nature 621, 289-294 (2023). Figure 1

Effect of MgO/ZnO ratio on the formation process of MgxZn1-xO ceramics

The structural characteristics, chemical composition, and element spatial distribution in MgxZn1-xO ceramics were investigated using X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, energy-dispersive X-ray spectroscopy, and cathodoluminescence techniques. The study revealed that the morphology of the ceramic samples, as well as the mechanism of solid solution formation, depend on the relative contribution of both oxides in the charge. It was discovered that hexagonal and cubic phases of the solid solution were found to form simultaneously. An increase in the MgO content in the charge results in the magnesium content rise in the hexagonal grains continuously, reaching approximately 13 at.%. It was discovered an enrichment of grain boundaries with zinc and magnesium playing a significant role in doping ZnO and MgO grains. Obtained results allowed to propose two mechanisms involved in the formation of solid solution ceramics: i) diffusion of Mg and Zn along grain boundaries, followed by their incorporation into ZnO or MgO grains, respectively, and ii) interdiffusion of Mg into ZnO and Zn into MgO due to direct contact of ZnO and MgO grains. The second mechanism appears to dominate when both ZnO and MgO contribute comparably, increasing the probability of their direct contact. This study significantly advances the understanding of the process of the formation of MgxZn1-xO ceramics under thermodynamic conditions. These insights are crucial for optimizing the doping process and improving the material properties, thereby promoting innovations in the ceramics industry.

Grain boundary segregation for the Fe-P system: Insights from atomistic modeling and Bayesian inference

In this work we re-assess experimental data for grain boundary (GB) segregation of P in bcc Fe with thermodynamic and statistical methods. The data are based on Auger-Electron-Spectroscopy (AES) measurements which have provided P GB concentrations for various bulk contents and temperatures for ferrite. While in the previous investigations of this system a single-site McLean equation was used to extract segregation enthalpy and entropy, we employ multi-site segregation models as suggested by atomistic simulations. We use a recently introduced methodology based on inter-atomic potentials to calculate the segregation energy spectrum, as well as vibrational entropy and solute-solute interactions of P in polycrystalline Fe, thereby obtaining a three-dimensional distribution of energy, entropy and interactions. Using this trivariate distribution we predict P GB concentrations and compare them to the experimental measurements. Furthermore, we calibrate the parameters of physical models of increasing complexity to the experimental data with an inverse modeling approach based on Bayesian inference. While it is not possible to seamlessly link the results from AES to atomistic modeling, our investigation provides significant new insights for thermodynamic modeling of GB segregation. The vibrational entropy deduced from experiment differs from physics based atomistic simulations even when taking the spectral nature of energy, entropy and interactions into account. However, the correlations of the quantities are in good agreement when considering the trivariate model. Our investigation highlights the need for new and more accurate experimental datasets of GB segregation.

Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment

Presently it is important to remove mechanically disturbed layer on wafer surface during creation of up-to-date microelectronic products. Rapid thermal treatment with optical pulses of second duration is one of the applicable methods for removing disturbances in crystal lattice emerging after ion implantation. However the crystal structure of mechanically disturbed layer on wafer planar side is still unclear. Researches by transmission electronic method, analysis of diffraction reflection curve and electronic Auger spectroscopy has failed to provide reliable data about the state of crystal lattice in surface layer of at least 30 nm thickness. Hence it was impossible to suggest a model of solid phase recrystallization and to present its mathematical description. The goals of the work were as follows: – identify of silicon crystal lattice state in surface layer of 30 nm thickness before and after rapid thermal treatment by backward reflected electrons diffraction method using raw Si wafers surface; – analysis of contamination element composition on the surface of raw silicon before and after rapid thermal treatment; – model development for solid phase recrystallization of surface disturbed layer after rapid thermal treatment and its mathematical description. Images of back ward reflected electrons diffraction using surface layer of raw silicon wafers' of 30 nm thickness and also the results of the planar surface of raw silicon wafers' cleaning from impurities are provided. Processes reducing the activating energy of mechanically disturbed silicon layer recrystallization process were suggested and its mathematical description was provided. Parameters of rapid thermal treatment mitigating the thermal impact on silicon wafer for recrystallization of mechanically disturbed layer on its planar surface ware defined.

Influence of Hardwood Lignin Blending on the Electrical and Mechanical Properties of Cellulose Based Carbon Fibers.

Carbon fibers (CFs) are fabricated by blending hardwood kraft lignin (HKL) and cellulose. Various compositions of HKL and cellulose in blended solutions are air-gap spun in 1-ethyl-3-methylimidazolium acetate (EMIM OAc), resulting in the production of virtually bead-free quality fibers. The synthesized HKL-cellulose fibers are thermostabilized and carbonized to achieve CFs, and consequently their electrical and mechanical properties are evaluated. Remarkably, fibers with the highest lignin content (65%) exhibited an electrical conductivity of approximately 42 S/cm, surpassing that of cellulose (approximately 15 S/cm). Moreover, the same fibers demonstrated significantly improved tensile strength (∼312 MPa), showcasing a 5-fold increase compared to pure cellulose while maintaining lower stiffness. Comprehensive analyses, including Auger electron spectroscopy and wide-angle X-ray scattering, show a heterogeneous skin-core morphology in the fibers revealing a higher degree of preferred orientation of carbon components in the skin compared to the core. The incorporation of lignin in CFs leads to increased graphitization, enhanced tensile strength, and a unique skin-core structure, where the skin's graphitized cellulose and lignin contribute stiffness, while the predominantly lignin-rich core enhances carbon content, electrical conductivity, and strength.

Laser induced ultrafast Gd 4f spin dynamics at the surface of amorphous CoxGd100-x ferrimagnetic alloys

We have investigated the laser induced ultrafast dynamics of Gd 4f spins at the surface of CoxGd100-x alloys by means of surface-sensitive and time-resolved dichroic resonant Auger spectroscopy. We have observed that the laser induced quenching of Gd 4f magnetic order at the surface of the CoxGd100-x alloys occur on a much longer time scale than that previously reported in “bulk sensitive” time-resolved experiments. In parallel, we have characterized the static structural and magnetic properties at the surface and in the bulk of these alloys by combining Physical Property Measurement System (PPMS) magnetometry with X-ray Magnetic Circular Dichroism in absorption spectroscopy (XMCD) and X-Ray Photoelectron spectroscopy (XPS). The PPMS and XMCD measurements give information regarding the composition in the bulk of the alloys. The XPS measurements show non-homogeneous composition at the surface of the alloys with a strongly increased Gd content within the first layers compared to the nominal bulk values. Such larger Gd concentration results in a reduced indirect Gd 4f spin-lattice coupling. It explains the “slower” Gd 4f demagnetization we have observed in our surface-sensitive and time-resolved measurements compared to that previously reported by “bulk-sensitive” measurements.

Drop–Dry Deposition of SnO2 Using Na2SnO3 and Fabrication of SnO2/NiO Transparent Solar Cells

In this work, SnO2 thin films are deposited by drop–dry deposition (DDD), which is a simple, low-cost chemical technique for thin film deposition. The deposition solution contains Na2SnO3 as the Sn source, and is highly stable without spontaneous reactions in the solution. The solution is dropped on a substrate heated to 60°C on a heater plate. According to Auger electron spectroscopy, the deposit will be stoichiometric SnO2. The film is n-type and transparent in the visible range. The pn heterostructure is fabricated by depositing SnO2 on p-type NiO. The NiO film is also fabricated by DDD. Ni(OH)2 is deposited using a solution containing Ni(NO3)2 and NaOH, and then is converted to NiO by annealing at 400°C. The SnO2/NiO structure is transparent in the visible range and shows clear rectification properties and photovoltaic effects. Thus, a transparent solar cell is successfully fabricated by DDD.

Fabrication of monolayer h-BN/LaB6 heterostructure thin film with low work function and high chemical stability

To expand the applications of low work function materials, high chemical stability is necessary to prevent the surface from unfavorable reactions. We developed a 20-nm-thick lanthanum hexaboride (LaB6) thin film covered by a monolayer hexagonal boron nitride (h-BN), which exhibits not only low work function but also high chemical stability. Results demonstrated that the h-BN/LaB6 heterostructure can be formed by vacuum annealing a nitrogen-doped LaB6 thin film. The formation process was investigated using Auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS), and X-ray absorption near edge structure (XANES) spectroscopy. We have elucidated that the doped nitrogen atoms and boron atoms in the film thermally diffuse into the surface during annealing, thereby forming the monolayer h-BN on the surface. Work function was measured using scanning tunneling microscopy (STM). From a practical perspective, chemical stability was evaluated with a heating temperature necessary for restoring the low work function state after air exposure. The work function was comparable to that of the clean LaB6(100) surface. Moreover, it recovered at a much lower temperature than the cleaning temperature of the LaB6(100) surface. We anticipate that this material development will facilitate implementation of the low work function material.

Quantification of alloy atomic composition sites in 2D ternary MoS2(1-x)Se2x and their role in persistent photoconductivity, enhanced photoresponse and photo-electrocatalysis

Engineering transition metal dichalcogenides-based semiconducting two-dimensional (2D) layered materials for photo(electro)chemical (PEC) hydrogen evolution reaction (HER) by water splitting is an enduring challenge. Here, alloy-assisted photoconductivity and photoresponse from CVD-grown MoS2(1-x)Se2x (MSSE) 2D ternary atomic layered alloy-based photodetector device is presented for the realization of PEC HER. The explicit role of ‘S–Se’ and ‘Se2’ atomic alloy sites including chalcogen-induced vacancy defects on the photoconductivity/photoresponse and PEC HER performance of MSSE 2D alloy is investigated. Alloy formation, atomic site-by-site ‘Se’ composition and atomic structure are characterized using Raman/Photoluminescence (PL) spectroscopy, high-angle annular dark field (HAADF)- scanning transmission electron microscopy (STEM) extensively and supported with Auger Electron Spectroscopy (AES) mapping. Further, the local density and concentration of S–Se, Se2 atomic sites and defects were quantitatively estimated using HAADF-STEM image analysis in correlation with AES and it is found between the range of ∼15–20 % in MSSE alloy. A 10-fold high photoresponsivity in the case of MSSE concerning as-grown MS having fast photocurrent growth time and the prolonged decay time originates from the ‘Se’ and this alloy assisted states to enhance the PEC performance of MSSE alloy. The enhanced PEC HER activity of MSSE alloy was identified in terms of overpotential and current density. In addition, increased density of states as a function of ‘Se’ alloying, shifts in a p-band centre and lowers ΔGH* according to density functional theory calculations, which makes MSSE alloy an efficient HER activity. Further, the PEC stability and presence of the ‘S–Se’ and ‘Se2’ alloying and their role towards HER have been correlated by the spectral line shape analysis of PL and Raman spectra from post-PEC HER catalysts. These experimental and theoretical findings establish the role of chalcogen, and transition metal-based 2D alloy, leading to the design of new PECs of engineered 2D atomic layer interfaces.

An environmentally-friendly approach to monovalent Cu-doped ZnS: Physicochemical characterization and photocatalytic activity

Certain semiconducting species suffer from the lack of optical activity in the visible region of electromagnetic spectrum, due to large band gap. The integration of various dopants has been widely used in order to generate additional electron transitions and subsequently lead to red-shifted absorption spectrum and enhanced photon harvesting in the visible-NIR region. Herein, a facile two-step environmentally-friendly approach was employed to integrate monovalent Cu species onto ZnS lattice. The study was set to assess the effect of Cu doping in Zinc Sulfide lattice on optical and photocatalytic properties. The theoretical weight fraction of the dopant ranged between 0% and 50%. The physicochemical characterization of either neat semiconductors (ZnS and Cu2O) or Cu-doped ZnS hybrids was performed by using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Raman, X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES) and Diffuse reflectance spectroscopy (DRS). XPS provided some enhanced understanding about the chemical speciation of the hybrid materials. This information was strongly supported by Raman analysis. The optimized Cu-doped ZnS hybrid demonstrated enhanced photocatalytic activity towards the degradation of Orange G dye, under UV irradiation.

Epitaxial Fe/Rh bilayers for efficient spin-to-charge conversion

To address the spin pumping in the conventional ferromagnetic/“normal” metal systems, we fabricated 6 nm Fe/1–15 nm Rh epitaxial bilayers and determined the g-factor, magnetic anisotropy, and magnetization damping by combining both 0–40 GHz CPW-based frequency-dependent and cavity-based 9.56 GHz in-plane angular-dependent ferromagnetic resonance measurements at room temperature. Auger electron spectroscopy and low-energy electron diffraction show that Rh grows epitaxially on Fe. The epitaxial bilayers exhibit a high spin mixing conductance gmix↑↓=(2.9±0.2)×1019 m−2 and a spin diffusion length in Rhodium λsd=9.0±1.3 nm. This makes Rh comparable to Pt and Pd in terms of spin pumping and spin transport efficiency at room temperature.

Principal investigation on the surface chemistry of phosphated zinc coatings treated by hot active plasma

The effect of hot active plasma (HAP) on phosphated zinc coated steel was studied in detail with x-ray photoelectron (XPS) and scanning Auger electron spectroscopy (AES) combined with electron microscopy. In order to extend the scope of the methods from the surface down to the bulk of the coating, Ar+ ion sputter depth profiling coupled with XPS was utilized. While a mild surface cleaning effect was observed for weak treatments, increased HAP intensity caused significant chemical and structural changes on the coating surface. Initially, a partial decomposition of zinc orthophosphate (Zn3(PO4)2), as the sole surface constituent of the untreated coating, led to a mixed zinc metaphosphate (Zn(PO3)x) and zinc oxide (ZnO) phase, highly localized in randomly distributed micrometer sized spots on the treated surface. Finally, the most intensive HAP treatment, leading to a temperature rise of the treated sample up to 700 °C as revealed by in-situ temperature measurements, caused a complete transformation of the zinc phosphate material into a porous and rough ZnO layer. Moreover, the heat contribution of the HAP treatment induced remarkable modifications within the bulk of the coating – mixing of zinc with the underlying steel substrate – an effect mimicking a galvannealing process.

Experimental Realization of Auger Decay in the Field of a Positive Elementary Charge.

Auger electron spectroscopy is an omnipresent experimental tool in many fields of fundamental research and applied science. The determination of the kinetic energies of the Auger electrons yields information about the element emitting the electron and its chemical environment at the time of emission. Here, we present an experimental approach to determine Auger spectra for emitter sites in the vicinity of a positive elementary charge based on electron-electron-electron and electron-electron-photon coincidence spectroscopy. We observe a characteristic redshift of the Auger spectrum caused by the Coulomb interaction with the charged environment. Our results are relevant for the interpretation of Auger spectra of extended systems like large molecules, clusters, liquids, and solids, in particular in high-intensity radiation fields which are nowadays routinely available, e.g., at x-ray free-electron laser facilities. The effect has been widely ignored in the literature so far, and some interpretations of Auger spectra from clusters might need to be revisited.

Remote plasma chemical vapor deposition of silicon oxycarbide film with a styrene-containing precursor and in situ O2 plasma treatment

In this paper, a study was conducted on silicon oxycarbide thin-film deposition using remote plasma chemical vapor deposition. A di-methyldimethoxysilane)2styrene (MDMS)2styrene precursor and CH4 plasma were used in the deposition process, and in situ oxygen plasma treatment was performed to control the carbon content and properties of the thin film. During the deposition process, the thin-film growth rate was found to be almost constant regardless of in situ plasma treatment. This means that in situ oxygen plasma treatment had no significant effect on thin-film growth itself. Auger electron spectroscopy analysis revealed that the carbon content of the deposited thin film was 43 % when only deposition was performed, but could be lowered to 3 % by in situ oxygen plasma treatment, which demonstrated that the carbon content can be controlled in a relatively wide range. X-ray photoelectron spectroscopy showed that it was possible to preserve SiC bonds even as the oxygen content increased with the number of in situ plasma treatments. The refractive index increased from 1.33 to 1.49, indicating a decrease in the number of pores and an increase in density. Meanwhile, the dielectric constant increased with the oxygen content, but did not exceed 3.9 due to the SiC bond structure. As the pore size decreased, the leakage current tended to decrease to 9.51 × 10−9 A/cm2 in an electric field of 1 MV/cm, and the breakdown voltage increased. Finally, it was possible to improve the etching characteristic through plasma treatment by lowering the wet etch rate from 78 to 19 Å/min.

Electron-induced deposition using Fe(CO)4MA and Fe(CO)5 - effect of MA ligand and process conditions.

The electron-induced decomposition of Fe(CO)4MA (MA = methyl acrylate), which is a potential new precursor for focused electron beam-induced deposition (FEBID), was investigated by surface science experiments under UHV conditions. Auger electron spectroscopy was used to monitor deposit formation. The comparison between Fe(CO)4MA and Fe(CO)5 revealed the effect of the modified ligand architecture on the deposit formation in electron irradiation experiments that mimic FEBID and cryo-FEBID processes. Electron-stimulated desorption and post-irradiation thermal desorption spectrometry were used to obtain insight into the fate of the ligands upon electron irradiation. As a key finding, the deposits obtained from Fe(CO)4MA and Fe(CO)5 were surprisingly similar, and the relative amount of carbon in deposits prepared from Fe(CO)4MA was considerably less than the amount of carbon in the MA ligand. This demonstrates that electron irradiation efficiently cleaves the neutral MA ligand from the precursor. In addition to deposit formation by electron irradiation, the thermal decomposition of Fe(CO)4MA and Fe(CO)5 on an Fe seed layer prepared by EBID was compared. While Fe(CO)5 sustains autocatalytic growth of the deposit, the MA ligand hinders the thermal decomposition in the case of Fe(CO)4MA. The heteroleptic precursor Fe(CO)4MA, thus, offers the possibility to suppress contributions of thermal reactions, which can compromise control over the deposit shape and size in FEBID processes.

Intergranular Attack of Low Carbon Steel in Molten Aluminum Chloride

AISI 1018 carbon steel exhibits intergranular attack in molten aluminum chloride. To explore grain boundary corrosion initiation and propagation, tests have been conducted on several iron-based alloys, heat treated to recrystallization temperature, and using molten aluminum chloride and its mixture with other molten chlorides environments. Pure iron, A106, and AISI 1018 carbon steel have been exposed to both pure aluminum chloride and ferric chloroaluminate melt in both their recrystallized and as-received, cold-worked conditions. Intergranular corrosion is observed in both 1018 and A106 carbon steels in all the salts whereas pure iron only shows pitting. Materials processing has varying effects on the corrosion depths of 1018 and A106 carbon steels. The grain boundary microchemistry of 1018 carbon steel is examined with in situ fracture Auger spectroscopy where molybdenum and carbon segregation are found, and a mechanism is proposed to explain the present corrosion phenomenon.